VS-ST333C04LFP1L [VISHAY]
Silicon Controlled Rectifier,;
| 型号： | VS-ST333C04LFP1L |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, |
| 文件： | 总10页 (文件大小：392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-ST333C..L Series
Vishay Semiconductors
www.vishay.com
Inverter Grade Thyristors
(Hockey PUK Version), 620 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case TO-200AC (B-PUK)
• High surge current capability
• Low thermal impedance
• High speed performance
TO-200AC (B-PUK)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
TO-200AC (B-PUK)
Single SCR
620 A
TYPICAL APPLICATIONS
• Inverters
V
DRM/VRRM
400 V to 800 V
1.96 V
• Choppers
VTM
• Induction heating
I
TSM at 50 Hz
TSM at 60 Hz
IGT
11 000 A
• All types of force-commutated converters
I
11 500 A
200 mA
TC/hs
55 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
620
UNITS
A
°C
A
IT(AV)
Ths
55
1230
IT(RMS)
ITSM
I2t
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
11 000
11 500
605
A
kA2s
553
VDRM/VRRM
400 to 800
10 to 30
-40 to +125
V
tq
Range
μs
°C
TJ
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RSM, MAXIMUM
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
I
DRM/IRRM MAXIMUM
VOLTAGE
CODE
NON-REPETITIVE PEAK
TYPE NUMBER
AT TJ = TJ MAXIMUM
mA
VOLTAGE
V
04
08
400
800
500
900
VS-ST333C..L
50
Revision: 02-Mar-17
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CURRENT CARRYING CAPABILITY
ITM
ITM
ITM
FREQUENCY
UNITS
100 µs
180° el
180° el
2340
50 Hz
1430
1670
1250
1170
880
1940
1940
1800
990
6310
3440
2040
990
5620
5030
1750
800
400 Hz
2310
2090
1190
A
V
1000 Hz
1080
530
2500 Hz
400
Recovery voltage VR
Voltage before turn-on VD
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
50
VDRM
50
50
VDRM
-
50
VDRM
-
A/μs
°C
40
55
40
55
40
55
10 / 0.47
10 / 0.47
10 / 0.47
/μF
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
620 (305)
55 (75)
1230
UNITS
A
Maximum average on-state
current at heatsink temperature
180° conduction, half sine wave
double side (single side) cooled
IT(AV)
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
11 000
11 500
9250
No voltage
reapplied
A
Maximum peak, one half cycle,
ITSM
non-repetitive surge current
100 %VRRM
reapplied
9700
Sinusoidal half wave,
initial TJ = TJ max.
605
No voltage
reapplied
553
Maximum I2t for fusing
I2t
kA2s
428
100 % VRRM
reapplied
391
Maximum I2t for fusing
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
6050
kA2s
ITM = 1810 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
Maximum peak on-state voltage
VTM
1.96
V
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
VT(TO)1
VT(TO)2
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ max.
(I > x IT(AV)), TJ = TJ maximum
0.91
0.93
0.58
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ max.
m
High level value of forward slope
resistance
rt2
(I > x IT(AV)), TJ = TJ max.
0.58
Maximum holding current
Typical latching current
IH
IL
TJ = 25 °C, IT > 30 A
600
mA
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned-on current
dI/dt
TJ = TJ max., VDRM = rated VDRM, ITM = 2 x dI/dt
1000
A/μs
TJ = 25 °C, VDM = rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
Typical delay time
td
tq
1.1
μs
minimum
Maximum turn-off time
maximum
10
30
TJ = TJ max., ITM = 550 A, commutating dI/dt = 40 A/μs,
VR = 50 V, tp = 500 μs, dV/dt: see table in device code
Revision: 02-Mar-17
Document Number: 96078
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BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
TJ = TJ max., linear to 80 % VDRM,
Maximum critical rate of rise of off-state voltage
dV/dt
500
50
V/μs
mA
higher value available on request
IRRM
,
Maximum peak reverse and off-state leakage current
TJ = TJ max., rated VDRM/VRRM applied
IDRM
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES UNITS
Maximum peak gate power
60
TJ = TJ max., f = 50 Hz, d % = 50
W
Maximum average gate power
PG(AV)
IGM
10
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
10
20
5
A
V
+VGM
-VGM
IGT
TJ = TJ max., tp 5 ms
200
3
mA
V
TJ = 25 °C, VA = 12 V, Ra = 6
VGT
IGD
20
0.25
mA
V
TJ = TJ max., rated VDRM applied
VGD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.11
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
RthJ-hs
0.05
K/W
0.011
Maximum thermal resistance, case to heatsink
Mounting force, 10 %
RthC-hs
0.005
9800
(1000)
N
(kg)
Approximate weight
Case style
250
g
See dimensions - link at the end of datasheet
TO-200AC (B-PUK)
RthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
0.012
DOUBLE SIDE
0.010
SINGLE SIDE
0.008
DOUBLE SIDE
0.008
180°
120°
90°
0.014
0.015
0.014
0.014
0.018
0.018
0.019
0.019
TJ = TJ max.
K/W
60°
0.026
0.027
0.027
0.028
30°
0.045
0.046
0.046
0.046
Note
•
The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 02-Mar-17
Document Number: 96078
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VS-ST333C..L Series
Vishay Semiconductors
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130
120
110
130
120
110
100
90
ST333C..L series
(double side cooled)
RthJ-hs (DC) = 0.05 K/W
ST333C..L series
(single side cooled)
RthJ-hs(DC) = 0.11 K/W
100
90
80
70
60
Ø
Ø
80
Conduction angle
Conduction period
70
30°
30°
60
60°
60°
90°
90°
50
120°
180°
50
40
30
40
120°
180°
30
DC
20
0
200
400
600
800 1000 1200 1400
0
100
200
300
400
500
Average On-State Current (A)
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
130
120
110
2200
2000
1800
1600
ST333C..L series
(single side cooled)
RthJ-hs(DC) = 0.11 K/W
180°
120°
90°
60°
30°
100
90
80
70
60
RMS limit
1400
1200
1000
800
Ø
Conduction period
Ø
600
Conduction angle
50
40
30
90°
120°
400
200
0
ST333C..L series
TJ = 125 °C
60°
30°
180°
DC
200 300 400 500 600
0
200
400
600
800
1000
0
100
700 800
Average On-State Current (A)
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
130
120
110
100
90
2800
2400
2000
1600
ST333C..L series
(double side cooled)
RthJ-hs(DC) = 0.05 K/W
DC
180°
120°
90°
60°
30°
RMS limit
Ø
80
Conduction angle
70
1200
800
60
Ø
50
30°
60°
90°
Conduction period
40
120°
180°
400
0
ST333C..L series
TJ = 125 °C
30
20
0
100
200 300 400 500 600
700 800
0
200
400 600 800 1000 1200 1400 1600
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 02-Mar-17
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VS-ST333C..L Series
Vishay Semiconductors
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10 000
9500
9000
8500
1
0.1
At any rated load condition and with
Staedy state value Rth-J-hs = 0.11 K/W
(single side cooled)
Rth-J-hs = 0.05 K/W
(double sided cooled) (DC operation)
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
8000
7500
7000
6500
6000
0.01
5500
5000
4500
ST333C..L series
ST333C..L series
0.001
1
10
100
0.001
0.01
0.1
1
10
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Square Wave Pulse Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
320
12 000
Maximum non-repetitive surge current
vs. pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
ITM = 1000 A
500 A
300
280
260
240
220
200
180
11 000
300 A
200 A
100 A
10 000
9000
No voltage reapplied
Rated VRRM reapplied
8000
7000
160
140
120
6000
5000
4000
ST333C..L series
T = 125 °C
ST333C..L series
100
80
10 20
30
40
50
60
70
80
90 100
0.01
0.1
1
Pulse Train Duration (s)
dIF/dt - Rate of Fall of On-State Current (A/μs)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 11 - Reverse Recovered Charge Characteristics
10 000
180
ITM = 1000 A
500 A
160
300 A
200 A
100 A
140
120
100
80
1000
TJ = 25 °C
TJ = 125 °C
60
40
ST333C..L series
T = 125 °C
ST333C..L series
100
20
0
1
2
3
4
5
6
7
10 20 30 40 50 60 70 80 90 100
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
dIF/dt - Rate of Fall of Forward Current (A/μs)
Fig. 12 - Reverse Recovery Current Characteristics
Revision: 02-Mar-17
Document Number: 96078
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VS-ST333C..L Series
Vishay Semiconductors
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1E4
1E3
1E2
1E4
1E3
50 Hz
400
200100
200
500
400
100
50 Hz
1000
1500
2500
3000
5000
500
1000
1500
2500
3000
5000
Snubber circuit
RS = 10 Ω
CS = 0.47 μF
VD = 80 % VDRM
Snubber circuit
RS = 10 Ω
S = 0.47 μF
C
VD = 80 % VDRM
ST333C..L series
Sinusoidal pulse
TC = 40°C
ST333C..L series
Sinusoidal pulse
TC = 55 °C
tp
tp
1E2
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (μs)
Pulse Basewidth (μs)
Fig. 13a - Frequency Characteristics
Fig.13b - Frequency Characteristics
1E4
1E3
1E2
1E4
Snubber circuit
RS = 10 Ω
CS = 0.47 μF
Snubber circuit
RS = 10 Ω
CS = 0.47 μF
VD = 80 % VDRM
V
D = 80 % VDRM
50 Hz
100
200
400
50 Hz
500
200
100
400
1000
1500
2000
500
1000
1E3
1E2
1500
2000
2500
2500
3000
ST333C..L series
Trapezoidal pulse
TC = 40°C
3000
5000
ST333C..L series
Trapezoidal pulse
TC = 55 °C
5000
tp
tp
di/dt = 50 A/μs
di/dt = 50 A/μs
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (μs)
Pulse Basewidth (μs)
Fig.14b - Frequency Characteristics
Fig.14a - Frequency Characteristics
1E4
1E3
1E2
1E4
1E3
Snubber circuit
Snubber circuit
RS = 10 Ω
CS = 0.47 μF
VD = 80 % VDRM
R
S = 10 Ω
CS = 0.47 μF
VD = 80 % VDRM
50 Hz
100
50 Hz
100
200
400
200
500
1000
400
500
1000
1500
2000
2500
1500
2000
2500
3000
5000
ST333C..L series
Trapezoidal pulse
TC = 40 °C
ST333C..L series
Trapezoidal pulse
TC = 55 °C
3000
5000
tp
di/dt = 100 A/μs
tp
di/dt = 100 A/μs
1E2
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (μs)
Fig.15a - Maximum On-State Energy Power Loss Characteristics
Pulse Basewidth (μs)
Fig.15b - Maximum On-State Energy Power Loss Characteristics
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1E5
1E4
1E3
1E2
1E1
1E5
1E4
ST333C..L series
Rectangular pulse
di/dt = 50 A/μs
tp
20 joules per pulse
10
20 joules per pulse
5
10
3
5
2
1
3
2
1E3
1E2
0.5
0.3
1
0.5
0.2
0.3
0.2
ST333C..L series
Sinusoidal pulse
tp
1E1
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (μs)
Pulse Basewidth (μs)
Fig.16a - Maximum On-State Energy Power Loss Characteristics
Fig.16b - Maximum On-State Energy Power Loss Characteristics
100
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20 V, 10 Ω; tr ≤ 1 μs
10
(a)
b) Recommended load line for
≤ 30 % rated di/dt : 10 V, 10 Ω
tr ≤ 1 μs
(b)
1
(1)
(2)
(3) (4)
VGD
IGD
Device: ST333C..L series
Frequency limited by PG (AV)
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig.17 - Gate Characteristics
Revision: 02-Mar-17
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VS-ST333C..L Series
Vishay Semiconductors
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ORDERING INFORMATION TABLE
Device code
VS- ST
33
3
C
08
L
H
K
1
-
1
2
3
4
5
6
7
8
9
10
11
1
2
3
4
5
6
-
-
-
-
-
-
Vishay Semiconductors product
Thyristor
Essential part number
3 = fast turn-off
C = ceramic PUK
Voltage code x 100 = VRRM
(see Voltage Ratings table)
L = PUK case TO-200AC (B-PUK)
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
7
8
-
-
-
-
Reapplied dV/dt code (for tq test condition)
tq code
10
12
15
18
20
25
30
CN DN EN
CM DM EM
CL DL EL
-
-
9
FM*
FL*
-
HL
10
0 = eyelet terminals
tq (µs)
CP DP EP FP HP
(gate and auxiliary cathode unsoldered leads)
CK DK EK FK
H
1 = fast-on terminals
--
--
--
--
-- FJ HJ
-- -- HH
(gate and auxiliary cathode unsoldered leads)
* Standard part number.
All other types available only on request.
2 = eyelet terminals
(gate and auxiliary cathode soldered leads)
3 = fast-on terminals
(gate and auxiliary cathode soldered leads)
11
-
Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95076
Revision: 02-Mar-17
Document Number: 96078
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Outline Dimensions
Vishay Semiconductors
TO-200AC (B-PUK)
DIMENSIONS in millimeters (inches)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
34 (1.34) DIA. MAX.
2 places
0.7 (0.03) MIN.
27 (1.06) MAX.
Pin receptacle
AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
36.5 (1.44)
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95076
Revision: 01-Aug-07
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1
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Revision: 13-Jun-16
Document Number: 91000
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