VS-ST333C08LFM0 [VISHAY]
SCR PHASE CONT 800V 720A E-PUK;
| 型号： | VS-ST333C08LFM0 |
| 厂家： | 
VISHAY |
| 描述： | SCR PHASE CONT 800V 720A E-PUK |
| 文件： | 总10页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-ST333C..C Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 720 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case E-PUK (TO-200AB)
• High surge current capability
• Low thermal impedance
• High speed performance
E-PUK (TO-200AB)
PRIMARY CHARACTERISTICS
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Package
Circuit configuration
IT(AV)
E-PUK (TO-200AB)
Single SCR
720 A
TYPICAL APPLICATIONS
• Inverters
V
DRM/VRRM
400 V, 800 V
1.96 V
VTM
• Choppers
I
TSM at 50 Hz
TSM at 60 Hz
IGT
11 000 A
11 500 A
200 mA
• Induction heating
I
• All types of force-commutated converters
TC/Ths
55 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
720
UNITS
A
°C
A
IT(AV)
Ths
Ths
55
1435
IT(RMS)
ITSM
I2t
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
11 000
11 500
605
A
kA2s
553
VDRM/VRRM
400 to 800
10 to 30
-40 to +125
V
tq
Range
μs
°C
TJ
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM
VRSM, MAXIMUM
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
REPETITIVE PEAK VOLTAGE NON-REPETITIVE PEAK VOLTAGE
V
V
04
08
400
800
500
900
VS-ST333C..C
50
Revision: 13-Sep-17
Document Number: 93678
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VS-ST333C..C Series
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CURRENT CARRYING CAPABILITY
ITM
ITM
ITM
FREQUENCY
UNITS
100 µs
180° el
1630
180° el
2520
50 Hz
1420
1390
1090
550
2260
2330
2120
1220
7610
4080
2420
1230
6820
3600
2100
1027
400 Hz
1630
1350
720
2670
2440
1450
A
V
1000 Hz
2500 Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
50
VDRM
50
50
VDRM
-
50
VDRM
-
A/µs
°C
40
55
40
55
40
55
10/0.47
10/0.47
10/0.47
/µF
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES UNITS
720 (350)
55 (75)
1435
11 000
11 500
9250
9700
605
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
Double side (single side) cooled
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
A
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
553
Maximum I2t for fusing
I2t
kA2s
428
100 % VRRM
reapplied
391
Maximum I2t for fusing
I2t
VTM
VT(TO)1
VT(TO)2
rt1
t = 0.1 to 10 ms, no voltage reapplied
ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
6050
1.96
kA2s
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
0.91
V
0.93
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
0.58
m
rt2
0.58
IH
TJ = 25 °C, IT > 30 A
600
mA
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
1000
SWITCHING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
MIN. MAX.
Maximum non-repetitive rate of rise
of turned on current
dI/dt
TJ = TJ maximum, VDRM = Rated VDRM; ITM = 2 x dI/dt
1000
A/µs
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
Typical delay time
td
1.1
µs
TJ = TJ maximum,
Maximum turn-off time
tq
I
TM = 550 A, commutating dI/dt = 40 A/μs
10
30
VR = 50 V, tp = 500 μs, dV/dt: See table in device code
Revision: 13-Sep-17
Document Number: 93678
2
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VS-ST333C..C Series
www.vishay.com
Vishay Semiconductors
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
Maximum critical rate of rise of off-state voltage
dV/dt
500
V/µs
IRRM
IDRM
,
Maximum peak reverse and off-state leakage current
TJ = TJ maximum, rated VDRM/VRRM applied
50
mA
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
60
10
10
20
5
TJ = TJ maximum, f = 50 Hz, d% = 50
W
A
Maximum average gate power
PG(AV)
IGM
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
+VGM
-VGM
IGT
TJ = TJ maximum, tp 5 ms
V
200
3
mA
V
TJ = 25 °C, VA = 12 V, Ra = 6
VGT
IGD
20
0.25
mA
V
TJ = TJ maximum, rated VDRM applied
VGD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.09
UNITS
Maximum operating temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
RthJ-hs
RthC-hs
0.04
K/W
0.020
Maximum thermal resistance, case to heatsink
Mounting force, 10 %
0.010
9800
(1000)
N
(kg)
Approximate weight
Case style
83
g
See dimensions - link at the end of datasheet
E-PUK (TO-200AB)
RthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.010
0.012
0.015
0.022
0.036
0.011
0.012
0.015
0.022
0.036
0.007
0.012
0.016
0.023
0.036
0.007
0.013
0.017
0.023
0.037
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 13-Sep-17
Document Number: 93678
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VS-ST333C..C Series
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Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
ST333C..C Series
ST333C..C Series
(Single Side Cooled)
th J- hs
(Double Side Cooled)
R
(DC) = 0.04 K/W
R
(DC) = 0.09 K/W
th J-hs
C ond uction Angle
C ondu ction Period
80
80
70
70
30°
60
60
60°
50
30°
50
90°
60°
40
40
120°
90°
180°
D C
30
120°
180°
30
20
20
0
100
200
300
400
500
600
0
200 400 600 800 1000 1200 1400 1600
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1 30
2 2 00
ST 333C ..C S eries
1 20
2 0 00
1 8 00
1 6 00
1 4 00
1 2 00
1 0 00
8 00
1 80°
1 20°
90°
(Sin g le S id e C oo led )
1 10
1 00
9 0
R
( D C ) = 0 .09 K /W
th J-hs
60°
30°
R M S Lim it
8 0
Cond uction P eriod
7 0
6 0
C ondu ction Angle
5 0
6 00
30°
6 0°
4 0
4 00
ST 333 C ..C S er ie s
125°C
90°
12 0°
3 0
2 00
T
=
J
1 80°
D C
2 0
0
0
10 0 2 00 30 0 40 0 5 00 6 0 0 70 0 80 0 9 00
A ve ra g e O n -sta te C u rre n t (A )
0
20 0
4 0 0
60 0
80 0
1 00 0
A ve ra g e O n -sta te C u rren t (A )
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
1 3 0
26 0 0
ST 333 C ..C S er ies
1 2 0
24 0 0
22 0 0
20 0 0
18 0 0
16 0 0
14 0 0
12 0 0
10 0 0
8 0 0
6 0 0
4 0 0
2 0 0
0
D C
180°
120°
90°
(D o ub le Sid e C oo le d )
1 1 0
1 0 0
9 0
R
(D C ) = 0.04 K /W
thJ-h s
60°
30°
R M S L im it
8 0
C ond uction Angle
7 0
6 0
5 0
30°
C ondu ction Period
S T3 33C ..C Se rie s
60 °
4 0
90 °
3 0
120°
T
= 12 5°C
2 0
J
180°
8 0 0 1 00 0
1 0
0
2 00
4 00
60 0
0
20 0 4 0 0 6 0 0 8 0 0 1 0 00 1 2 00 14 0 0 1 60 0
A ve ra g e O n -sta te C u rren t (A )
Av era g e O n - sta te C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
Revision: 13-Sep-17
Document Number: 93678
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VS-ST333C..C Series
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Vishay Semiconductors
0 .1
10000
9500
9000
8500
8000
7500
7000
6500
6000
5500
5000
4500
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RR M
S T33 3C ..C Ser ies
In itial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
S te a d y Sta te V a lu e
0 .0 1
R
=
0.09 K /W
(S in gle Sid e C oo le d )
0.04 K /W
th J-hs
R
=
thJ-h s
(D o u b le S id e C o ole d )
(D C O p e ra tio n )
ST333C..C Series
0 .00 1
0 .0 01
0 .0 1
0. 1
1
10
1
10
100
Numb er O f Eq ual Amplitud e Half C ycle C urrent Pulses (N)
Sq u a re W a ve P u ls e D ur atio n (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
12000
320
Maximum Non Repetitive Surge Current
I
=
500 A
300 A
200 A
100 A
50 A
TM
300
280
260
240
220
200
180
160
140
120
100
80
Versus Pulse Train Duration. C ontrol
11000
Of Conduction May Not Be Maintained.
Initial T = 125°C
J
10000
No Voltage Reapplied
Rated V
Reapplied
9000
8000
7000
6000
5000
4000
RR M
ST333C..C Series
= 125 °C
T
J
ST333C..C Series
10 20 30 40 50 60 70 80 90 100
0.01
0.1
Pulse Train Duration (s)
1
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 11 - Reverse Recovered Charge Characteristics
10000
1 8 0
I
= 5 00 A
300 A
200 A
100 A
50 A
TM
1 6 0
1 4 0
1 2 0
1 0 0
80
T
= 25°C
J
1000
T
= 125°C
J
ST 333C ..C S eries
125 ° C
60
T
=
J
40
ST333C..C Series
20
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
1 0
2 0
3 0
4 0
5 0
60
7 0
8 0
9 0 1 00
R a te O f Fa ll O f Fo rw a rd C ur ren t - d i/d t (A /µ s)
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Revision: 13-Sep-17
Document Number: 93678
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VS-ST333C..C Series
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1 E4
1 E3
1 E2
200
50 Hz
400
200
400
100
100
500
50 H z
500
1000
1000
1500
1500
2500
Snubb er circu it
Snubb er circuit
2500
3000
5000
R
C
V
= 10 ohms
= 0.47 µF
= 80% V
s
s
D
R
C
V
= 10 ohms
= 0.47 µF
80% V
s
s
D
3000
DRM
=
DRM
5000
ST333C ..C Series
Sinusoidal pulse
ST333C..C Series
Sin usoidal pulse
T
= 55°C
t p
C
T
= 40°C
tp
C
1 E1
1E2
1E3
1E4
1 E1
1E2
1E3
1 E4
Pu lse B a sew id th (µ s)
P ulse B a sew id th (µ s)
Fig. 13 - Frequency Characteristics
1E4
1E3
1E2
Snubber circuit
R
C
V
= 10 ohms
= 0.47 µF
= 80% V DRM
s
s
D
200 100
50 Hz
400
50 Hz
100
500
200
1000
1500
2000
400
500
1000
Snubber circuit
1500
2000
2500
3000
R
C
V
= 10 ohms
s
s
D
2500
= 0.47 µF
=
80% V
DRM
3000
ST333C..C Series
Trapezoidal p ulse
ST333C..C Series
Trap ezoid al p ulse
5000
T
= 55°C
C
tp
T
= 40°C
5000
C
di/dt = 100A/µs
tp
di/d t = 50A/µs
1E 1
1 E2
1 E3
1 E4
1 E1
1E2
1E3
1 E4
P u lse Ba sew id th (µs)
P u lse Ba se w id th (µ s)
Fig. 14 - Frequency Characteristics
1 E4
1 E3
1 E2
Snubber circuit
R
C
V
= 10 ohms
s
s
D
= 0.47 µF
= 80% V
DR M
50 Hz
50 Hz
100
200 100
200
400
500
400
500
1000
1500
2000
2500
3000
1000
Snubb er circuit
1500
2000
2500
R
C
V
= 10 ohms
= 0.47 µ F
= 80% V
s
s
D
DRM
ST333C..C Series
Trapezoid al p ulse
3000
ST333C..C Series
Trapezoidal pulse
T
= 55°C
5000
C
T
=
40°C
tp
C
5000
tp
di/dt = 100A/µs
d i/dt = 100A/µs
1E1
1E 2
P u lse Ba sew id th (µ s)
1 E3
1 E4
1 E1
1 E2
1E3
1E4
P u lse B asew id th (µ s)
Fig. 15 - Frequency Characteristics
Revision: 13-Sep-17
Document Number: 93678
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VS-ST333C..C Series
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1E4
1E3
1E2
1E1
20 joules per p ulse
ST333C Series
20 jou les p er pulse
Rectangula r pulse
10
5
10
di/dt = 50A/µs
3
tp
5
2
3
2
1
0.5
0.3
1
0.5
0.2
0.4
0.3
0.2
ST333C ..C Series
Sinusoidal pulse
tp
1 E1
1E2
1 E3
1E4
1E4
1E4
1E1
1E2
1E3
P u lse Ba sew id th (µ s)
P u lse B ase w id th (µ s)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
1 00
1 0
1
Re cta n g ula r g a te p u lse
(1) P G M = 1 0W , tp
(2) P G M = 2 0W , tp
(3) P G M = 4 0W , tp
(4) P G M = 6 0W , tp
=
=
=
=
20 m s
10 m s
5m s
a ) R ec om m en d e d lo a d lin e fo r
ra ted d i/d t : 20V , 10o h m s; tr< =1 µ s
b ) Re co m m en d ed loa d lin e f or
< = 30% ra te d d i/d t : 10 V , 10o h m s
tr< =1 µ s
3.3m s
(a )
(b )
(2)
(3 ) (4)
(1)
V G D
IG D
De vice : ST 333C ..C Se rie s Freq u en cy Lim ite d b y P G (A V )
0 .1 1 0
0.1
0.0 01
0.0 1
1
1 00
In sta n ta n e ou s G ate C u rr en t (A )
Fig. 17 - Gate Characteristics
Revision: 13-Sep-17
Document Number: 93678
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VS-ST333C..C Series
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ORDERING INFORMATION TABLE
Device code
VS- ST
33
3
C
08
C
H
K
1
-
1
2
3
4
5
6
7
8
9
10
11
1
2
3
-
-
-
-
Vishay Semiconductors product
Thyristor
Essential part number
3 = fast turn off
4
5
6
-
-
-
-
-
-
C = ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
C = PUK case E-PUK (TO-200AB)
7
8
9
dV/dt - tq combinations available
Reapplied dV/dt code (for tq test condition)
tq code
dV/dt (V/µs) 20 50 100 200 400
10 CN DN EN
12 CM DM EM
--
--
0 = eyelet terminal
10
FM*
FL*
FP
FK
FJ
--
15 CL
DL
EL
HL
HP
HK
HJ
HH
(gate and aux. cathode unsoldered leads)
1 = fast-on terminal
tq (µs)
18 CP DP EP
20 CK DK EK
25
30
--
--
--
--
--
--
(gate and aux. cathode unsoldered leads)
--
2 = eyelet terminal
* Standard part number.
All other types available only on request.
(gate and aux. cathode soldered leads)
3 = fast-on terminal
(gate and aux. cathode soldered leads)
-
Critical dV/dt:
11
None = 500 V/μs (standard value)
L = 1000 V/μs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95075
Revision: 13-Sep-17
Document Number: 93678
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Outline Dimensions
Vishay Semiconductors
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E-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum
25.3 (0.99)
DIA. MAX.
0.3 (0.01) MIN.
C
G
14.1/15.1
(0.56/0.59)
A
0.3 (0.01) MIN.
25.3 (0.99)
DIA. MAX.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
Note:
A = Anode
40.5 (1.59) DIA. MAX.
C = Cathode
G = Gate
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Revision: 12-Jul-17
Document Number: 95075
1
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