VS-VSKD166 [VISHAY]
Standard Recovery Diodes, 165 A to 230 A;
| 型号： | VS-VSKD166 |
| 厂家： | 
VISHAY |
| 描述： | Standard Recovery Diodes, 165 A to 230 A |
| 文件： | 总13页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes, 165 A to 230 A
(INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power diodes in four basic
configurations
• Simple mounting
INT-A-PAK
• UL approved file E78996
• Designed and qualified for multiple level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
165 A to 230 A
Modules - diode, high voltage
INT-A-PAK
Type
APPLICATIONS
• DC motor control and drives
• Battery chargers
• Welders
Package
Single diode, two diodes common anode,
two diodes common cathode, two diodes
doubler circuit
Circuit
configuration
• Power converters
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.166..
VSK.196..
195
VSK.236..
230
UNITS
A
165
IF(AV)
TC
100
100
100
°C
IF(RMS)
IFSM
260
305
360
50 Hz
60 Hz
50 Hz
60 Hz
4000
4200
80
4750
5500
5765
151
A
4980
113
I2t
kA2s
73
103
138
I2t
VRRM
TJ
798
1130
1516
kA2s
V
400 to 1600
-40 to +150
Range
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM NON-REPETITIVE
IRRM
AT 150 °C
mA
VOLTAGE
CODE
TYPE NUMBER
REVERSE VOLTAGE
V
PEAK REVERSE VOLTAGE
V
04
08
12
14
16
400
800
500
900
VS-VSK.166
VS-VSK.196
VS-VSK.236
1200
1400
1600
1300
1500
1700
20
Revision: 04-May-17
Document Number: 94357
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
VSK.166 VSK.196 VSK.236
165
100
260
4000
4200
3350
3500
80
195
100
230
100
A
Maximum average on-state
current at case temperature
IF(AV)
180° conduction, half sine wave
°C
Maximum RMS on-state current
IF(RMS)
305
360
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
4750
4980
4000
4200
113
5500
5765
4630
4850
151
No voltage
reapplied
Maximum peak, one-cycle
on-state, non-repetitive
surge current
A
IFSM
100 % VRRM
reapplied
Sine half wave,
initial TJ =
TJ maximum
No voltage
reapplied
73
103
138
Maximum I2t for fusing
I2t
kA2s
56
80
107
100 % VRRM
reapplied
52
73
98
Maximum I2t for fusing
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum
(I > x IF(AV)), TJ maximum
798
0.73
0.88
1130
0.69
0.78
1516
0.7
kA2
s
Low level value of threshold voltage
High level value of threshold voltage
VF(TO)1
VF(TO)2
V
0.83
Low level value on-state
slope resistance
rt1
rt2
(16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum
(I > x IF(AV)), TJ maximum
1.5
1.3
1.2
1.2
m
High level value on-state
1.26
1.43
1.07
1.46
IFM = x IF(AV), TJ = 25 °C, 180° conduction
Maximum forward voltage drop
VFM
1.38
V
2
Average power = VF(TO) x IF(AV) + rf x (IF(RMS)
)
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.166 VSK.196 VSK.236 UNITS
Maximum peak reverse and
off-state leakage current
IRRM
TJ = 150 °C
20
mA
V
50 Hz, circuit to base, all terminals shorted,
t = 1 s
RMS insulation voltage
VINS
3500
THERMAL AND MECHANICAL SPECIFICATIONS
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
VSK.166 VSK.196 VSK.236
Maximum junction operating and
storage temperature range
TJ, TStg
RthJC
-40 to +150
°C
Maximum thermal resistance,
junction to case per junction
DC operation
0.2
0.16
0.05
0.14
K/W
Nm
Maximum thermal resistance,
case to heatsink per module
RthCS
Mounting surface smooth, flat and greased
IAP to heatsink
busbar to IAP
Mounting
torque 10 %
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of
4 to 6
200
7.1
g
Approximate weight
Case style
the compound. Lubricated threads.
oz.
INT-A-PAK
Revision: 04-May-17
Document Number: 94357
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
DEVICES
UNITS
180°
0.025
0.016
0.009
120°
90°
60°
30°
180°
0.018
0.012
0.008
120°
0.031
0.02
90°
60°
30°
VSK.166
VSK.196
VSK.236
0.03
0.019
0.010
0.038
0.024
0.014
0.055
0.034
0.018
0.089
0.053
0.025
0.041
0.026
0.015
0.057
0.035
0.019
0.089
0.054
0.025
K/W
0.012
Note
•
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
150
140
130
120
110
100
90
250
200
150
100
50
VSK.166.. Series
thJC (DC) = 0.20 K/W
180°
120°
90°
60°
30°
R
Ø
Conduction angle
RMS limit
Ø
30°
Conduction angle
60°
90°
VSK.166.. Series
TJ = 150 °C
120°
80
180°
0
70
0
40
80
120
160
200
0
40
80
120
160
200
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
150
140
130
120
110
100
90
300
250
200
150
100
50
DC
180°
120°
90°
60°
30°
VSK.166.. Series
RthJC (DC) = 0.20 K/W
RMS limit
Ø
Conduction period
30°
Ø
60°
Conduction period
90°
VSK.166.. Series
Per junction
TJ = 150 °C
120°
80
180°
DC
250
0
70
0
50
100
150
200
250
300
0
50
100
150
200
300
Average Forward Current (A)
Fig. 4 - On-State Power Loss Characteristics
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Revision: 04-May-17
Document Number: 94357
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
4000
3500
3000
2500
2000
1500
1000
4000
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
3500
3000
2500
2000
1500
1000
500
No voltage reapplied
Rated VRRM reapplied
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
VSK.166.. Series
VSK.166.. Series
0.1
0.01
1
1
10
100
Pulse Train Duration (s)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
300
300
250
200
150
100
50
250
200
150
100
50
DC
VSK.166.. Series
Per junction
TJ = 150 °C
0
0
0
50
100
150
200
250
0
25
50
75
100
125
150
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
1800
1600
1400
1200
1000
800
1800
1600
1400
1200
1000
800
180°
(Sine)
180°
(Rect)
+
~
-
600
600
2 x VSK.166.. Series
Single phase bridge
Connected
400
200
0
400
200
0
TJ = 150 °C
500
100
200
300
400
0
0
25
50
75
100
125
150
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
Revision: 04-May-17
Document Number: 94357
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
1600
1400
1200
1000
800
600
400
200
0
1600
1400
~
120°
(Rect)
1200
1000
800
600
400
200
0
-
3 x VSK.166.. Series
Three phase bridge
Connected
TJ = 150 °C
0
0
0
100
200
300
400
500
0
25
50
75
100
125
150
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
150
140
130
120
110
100
90
300
180°
120°
90°
60°
30°
VSK.196.. Series
thJC (DC) = 0.16 K/W
R
250
200
150
100
50
Ø
RMS limit
Conduction angle
Ø
30°
Conduction angle
60°
90°
VSK.196.. Series
TJ = 150 °C
120°
80
180°
200
70
0
50
100
150
250
0
40
80
120
160
200
Average Forward Current (A)
Average Forward Current (A)
Fig. 10 - Current Ratings Characteristics
Fig. 12 - On-State Power Loss Characteristics
150
140
130
120
110
100
90
350
300
250
200
150
100
50
VSK.196.. Series
thJC (DC) = 0.16 K/W
DC
180°
120°
90°
60°
30°
R
RMS limit
Ø
Conduction period
Ø
30°
Conduction period
60°
90°
VSK.196.. Series
Per junction
120°
180°
80
TJ = 150 °C
DC
70
0
50
100
150
200
250
300
350
0
50
100
150
200
250
300
350
Average Forward Current (A)
Average Forward Current (A)
Fig. 13 - On-State Power Loss Characteristics
Fig. 11 - Current Ratings Characteristics
Revision: 04-May-17
Document Number: 94357
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
4500
4000
3500
3000
2500
2000
1500
1000
5000
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
4500
4000
3500
3000
2500
2000
1500
1000
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
No voltage reapplied
Rated VRRM reapplied
VSK.196.. Series
VSK.196.. Series
1
10
100
0.01
0.1
1.0
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
350
350
300
250
200
150
100
50
300
250
200
150
100
50
DC
VSK.196.. Series
Per junction
TJ = 150 °C
0
0
0
50
100
150
200
250
300
0
25
50
75
100
125
150
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 16 - On-State Power Loss Characteristics
1200
1000
800
600
400
200
0
1200
1000
800
+
-
180°
(Sine)
180°
~
(Rect)
600
400
2 x VSK.196.. Series
Single phase bridge
Connected
200
0
TJ = 150 °C
125
0
100
200
300
400
0
25
50
75
100
150
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 17 - On-State Power Loss Characteristics
Revision: 04-May-17
Document Number: 94357
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
1800
1600
1400
1200
1000
800
1800
+
1600
~
120°
(Rect)
1400
1200
1000
800
600
400
200
0
-
600
3 x VSK.196.. Series
Three phase bridge
Connected
400
200
TJ = 150 °C
0
0
25
50
75
100
125
150
0
100
200
300
400
500
600
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 18 - On-State Power Loss Characteristics
160
150
140
130
120
110
100
90
350
300
250
VSK.236.. Series
RthJC (DC) = 0.14 K/W
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
200
150
100
50
Ø
Conduction angle
30°
60°
90°
VSK.236.. Series
TJ = 150 °C
120°
180°
250
80
0
50
0
100
150
200
0
50
100
150
200
250
Average Forward Current (A)
Average Forward Current (A)
Fig. 19 - Current Ratings Characteristics
Fig. 21 - On-State Power Loss Characteristics
150
140
130
120
110
100
90
450
400
350
300
250
200
150
100
50
DC
VSK.236.. Series
180°
120°
90°
RthJC (DC) = 0.14 K/W
60°
Ø
Conduction period
RMS limit
30°
Ø
30°
Conduction period
60°
90°
120°
VSK.236.. Series
Per junction
80
TJ = 150 °C
180°
DC
0
70
0
50 100 150 200 250 300 350 400
Average Forward Current (A)
0
50 100 150 200 250 300 350 400
Average Forward Current (A)
Fig. 20 - Current Ratings Characteristics
Fig. 22 - On-State Power Loss Characteristics
Revision: 04-May-17
Document Number: 94357
7
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
5000
4500
4000
3500
3000
2500
2000
1500
5500
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
5000
4500
4000
3500
3000
2500
2000
1500
1000
No voltage reapplied
Rated VRRM reapplied
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
VSK.236.. Series
VSK.236.. Series
0.01
1
10
100
0.1
1.0
Number of Equal Amplitude Half
Cycle Current Pulse (A)
Pulse Train Duration (s)
Fig. 23 - Maximum Non-Repetitive Surge Current
Fig. 24 - Maximum Non-Repetitive Surge Current
450
450
400
350
300
250
200
150
100
50
400
350
300
250
200
150
100
50
DC
VSK.236.. Series
Per junction
TJ = 150 °C
0
0
0
50
100
150
200
250
300
350
0
25
50
75
100
125
150
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 25 - On-State Power Loss Characteristics
1600
1400
1200
1000
800
600
400
200
0
1600
1400
1200
1000
800
180°
(Sine)
180°
(Rect)
+
-
~
600
2 x VSK.236.. Series
Single phase bridge
Connected
400
200
0
TJ = 150 °C
0
100
200
300
400
500
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 26 - On-State Power Loss Characteristics
Revision: 04-May-17
Document Number: 94357
8
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
2500
2000
1500
1000
500
2500
+
~
2000
-
120°
(Rect)
1500
1000
3 x VSK.236.. Series
Three phase bridge
500
Connected
TJ = 150 °C
0
0
0
100
200
300
400
500
600
700
0
25
50
75
100
125
150
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 27 - On-State Power Loss Characteristics
10 000
10 000
1000
100
10
TJ = 25 °C
1000
100
10
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VSK.236.. Series
Per junction
VSK.166.. Series
Per junction
1
1
0
1.0
2.0
3.0
4.0
5.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous On-State Voltage (V)
Fig. 30 - On-State Voltage Drop Characteristics
Instantaneous On-State Voltage (V)
Fig. 28 - On-State Voltage Drop Characteristics
10 000
1
Steady state value
(DC operation)
TJ = 25 °C
1000
100
10
TJ = 150 °C
0.1
VSK.196.. Series
Per junction
VSK.166.. Series
1
1
0.01
0
1.0
2.0
3.0
4.0
5.0
0.01
0.1
10
Square Wave Pulse Duration (s)
Fig. 31 - Thermal Impedance ZthJC Characteristics
Instantaneous On-State Voltage (V)
Fig. 29 - On-State Voltage Drop Characteristics
Revision: 04-May-17
Document Number: 94357
9
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
1
1
Steady state value
(DC operation)
Steady state value
(DC operation)
0.1
0.1
VSK.236.. Series
1.0
VSK.196.. Series
1.0
0.01
0.01
0.01
0.1
10
0.01
0.1
10
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
Fig. 33 - Thermal Impedance ZthJC Characteristics
Fig. 32 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS KD 236 16 PbF
1
2
3
4
5
-
-
Vishay Semiconductors product
Circuit configuration
1
2
3
4
5
-
-
Current rating: IF(AV)
Voltage code x 100 = VRRM
-
PbF = Lead (Pb)-free
Note
To order the optional hardware go to www.vishay.com/doc?95172
•
Revision: 04-May-17
Document Number: 94357
10
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
VSKD...
~
+
-
Two diodes doubler circuit
D
C
J
+
~
+
-
-
VSKC...
-
+
-
Two diodes common cathode
-
-
VSKJ...
-
+
+
Two diodes common anode
+
+
VSKE...
-
+
Single diode
E
+
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95254
Revision: 04-May-17
Document Number: 94357
11
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
INT-A-PAK DBC
DIMENSIONS in millimeters (inches)
Ø 6.5 (Ø 0.25)
80 (3.15)
17 (0.67)
23 (0.91)
23 (0.91)
1
2
3
66 (2.60)
94 (3.70)
37 (1.44)
3 screws M6 x 10
Document Number: 95254
Revision: 11-Dec-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
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