VS-VSKDS209 [VISHAY]
High frequency operation;
| 型号： | VS-VSKDS209 |
| 厂家： | 
VISHAY |
| 描述： | High frequency operation |
| 文件： | 总6页 (文件大小：873K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-VSKDS209/150
Vishay Semiconductors
www.vishay.com
ADD-A-PAK Gen 7
Power Modules Schottky Rectifier, 100 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ADD-A-PAK
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• High surge capability
PRODUCT SUMMARY
IF(AV)
100 A
150 V
• Easy mounting on heatsink
VR
ELECTRICAL DESCRIPTION / APPLICATIONS
Package
Circuit
ADD-A-PAK Gen 7
Two diodes common cathode
The VS-VSKDS209.. Schottky rectifier doubler module has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
MECHANICAL DESCRIPTION
The ADD-A-PAK Gen 7, new generation of ADD-A-PAK
module, combines the excellent thermal performances
obtained by the usage of exposed direct bonded copper
substrate, with advanced compact simple package solution
and simplified internal structure with minimized number of
interfaces.
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
100
UNITS
Rectangular waveform
A
V
150
tp = 5 μs sine
100 Apk, TJ = 125 °C
Range
11 300
0.85
A
VF
V
TJ
-55 to +175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VS-VSKDS209/150
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
150
V
VRWM
Revision: 28-Sep-15
Document Number: 93230
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKDS209/150
Vishay Semiconductors
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current per leg
IF(AV)
50 % duty cycle at TC = 113 °C, rectangular waveform
100
A
Following any rated
load conditionand with
rated VRRM applied
5 μs sine or 3 μs rect. pulse
11 300
Maximum peak one cycle
non-repetitive surge current
IFSM
10 ms sine or 6 ms rect. pulse
1600
15
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 1.8 A, L = 10 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
1.01
1.35
0.85
1.13
6
UNITS
100 A
TJ = 25 °C
200 A
Maximum forward voltage drop
VFM
V
100 A
TJ = 125 °C
200 A
TJ = 25 °C
Maximum reverse leakage current
IRM
V
R = Rated VR
mA
TJ = 125 °C
85
Maximum junction capacitance
Typical series inductance
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
3000
7.0
pF
nH
Maximum voltage rate of change
dV/dt
10 000
V/μs
3000 (1 min)
3600 (1 s)
Maximum RMS insulation voltage
VINS
50 Hz
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-55 to +175
°C
Maximum thermal resistance,
junction to case per leg
RthJC
RthCS
DC operation
0.52
0.1
°C/W
Typical thermal resistance,
case to heatsink per module
75
g
Approximate weight
2.7
oz.
A mounting compound is recommended and the torque
should be rechecked after a period of 3 hours to allow for
the spread of the compound.
to heatsink
busbar
4
3
Mounting torque 10 %
Case style
Nm
JEDEC®
TO-240AA compatible
Revision: 28-Sep-15
Document Number: 93230
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKDS209/150
Vishay Semiconductors
www.vishay.com
1000
100
10
1000
100
10
TJ = 175 °C
TJ = 125 °C
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
0.01
TJ = 25 °C
1
0.001
0
0.5
1.0
1.5
2.0
2.5
0
10 20 30 40 50 60 70 80 90 100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
10 000
TJ = 25 °C
1000
100
0
30
60
90
120
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
DC
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 28-Sep-15
Document Number: 93230
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKDS209/150
Vishay Semiconductors
www.vishay.com
180
160
140
120
100
80
140
120
100
80
RMS limit
DC
30°
60°
90°
60
120°
180°
DC
60
40
Square wave (D = 0.50)
Rated VR applied
40
20
20
See note (1)
0
0
0
50
100
150
200
250
300
0
30
60
90
120
150
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
100 000
10 000
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 28-Sep-15
Document Number: 93230
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKDS209/150
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS-VS KD
S
20
9
/
150
1
2
3
4
5
6
1
2
-
Circuit configuration:
KD = ADD-A-PAK - 2 diodes in series
S = Schottky diode
3
4
5
-
-
-
-
Average current rating (20 = 200 A)
Product silicon identification
Voltage rating (150 = 150 V)
6
CIRCUIT CONFIGURATION
(1)
~
(2)
(3)
+
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95369
Revision: 28-Sep-15
Document Number: 93230
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16
Document Number: 91000
1
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