VS-VSKN41/14 [VISHAY]
MODULE THYRISTOR 45A ADD-A-PAK;
| 型号： | VS-VSKN41/14 |
| 厂家： | 
VISHAY |
| 描述： | MODULE THYRISTOR 45A ADD-A-PAK |
| 文件： | 总11页 (文件大小：501K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-VSK.41.., VS-VSK.56.. Series
www.vishay.com
Vishay Semiconductors
AAP Gen 7 (TO-240AA) Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A, 60 A
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
ADD-A-PAK
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRIMARY CHARACTERISTICS
• Up to 1600 V
IT(AV) or IF(AV)
45 A, 60 A
• High surge capability
• Easy mounting on heatsink
Type
Modules - thyristor, standard
AAP Gen 7 (TO-240AA)
Package
ELECTRICAL DESCRIPTION
MECHANICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS, and battery charger.
The AAP Gen 7 (TO-240AA), new generation of AAP module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VS-VSK.41
45
VS-VSK.56
60
UNITS
IT(AV) or IF(AV)
85 °C
IO(RMS)
As AC switch
50 Hz
100
135
A
850
1200
ITSM,
IFSM
60 Hz
890
1256
50 Hz
3.61
7.20
I2t
kA2s
60 Hz
3.30
6.57
I2t
36.1
72
kA2s
V
VDRM/VRRM
Range
400 to 1600
400 to 1600
TStg
TJ
-40 to +125
-40 to +125
°C
°C
Revision: 26-Jul-2018
Document Number: 94630
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VS-VSK.41.., VS-VSK.56.. Series
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
V
RSM, MAXIMUM
VDRM, MAXIMUM REPETITIVE
I
RRM, IDRM
VOLTAGE
CODE
REPETITIVE PEAK
REVERSE VOLTAGE
V
NON-REPETITIVE PEAK
PEAK OFF-STATE VOLTAGE,
TYPE NUMBER
AT 125 °C
mA
REVERSE VOLTAGE
V
GATE OPEN CIRCUIT
V
04
06
08
10
12
14
16
400
600
500
700
400
600
800
900
800
VS-VSK.41
VS-VSK.56
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VSK.41 VSK.56 UNITS
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
180° conduction, half sine wave,
45
60
TC = 85 °C
IF(AV)
or
Maximum continuous RMS on-state current,
as AC switch
I(RMS)
I(RMS)
IO(RMS)
100
135
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
850
890
715
750
3.61
3.30
2.56
2.33
1200
1256
1000
1056
7.20
6.57
5.10
4.56
No voltage
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
ITSM
or
IFSM
Maximum peak, one-cycle non-repetitive
on-state or forward current
100 % VRRM
reapplied
No voltage
reapplied
Initial TJ =
TJ maximum
Maximum I2t for fusing
I2t
kA2s
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
Maximum I2t for fusing
I2t (1)
36.1
72
kA2s
Low level (3)
1.08
1.12
4.7
0.91
1.02
4.27
3.77
(2)
Maximum value or threshold voltage
VT(TO)
TJ = TJ maximum
V
High level (4)
Low level (3)
Maximum value of on-state
slope resistance
(2)
rt
TJ = TJ maximum
m
High level (4)
4.5
VTM
VFM
ITM = x IT(AV)
TJ = 25 °C
Maximum peak on-state or forward voltage
1.81
1.7
V
IFM = x IF(AV)
Maximum non-repetitive rate of rise of
turned on current
TJ = 25 °C, from 0.67 VDRM,
ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
dI/dt
150
200
A/μs
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum holding current
Maximum latching current
IH
IL
mA
TJ = 25 °C, anode supply = 6 V, resistive load
400
400
Notes
(1)
(2)
(3)
(4)
I2t for time tx = I2t x tx
Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
16.7 % x x IAV < I < x IAV
I > x IAV
2
)
Revision: 26-Jul-2018
Document Number: 94630
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.41.., VS-VSK.56.. Series
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TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VS-VSK.41 VS-VSK.56 UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
10
W
PG(AV)
IGM
2.5
2.5
10
A
- VGM
TJ = -40 °C
4.0
2.5
1.7
270
150
80
V
Anode supply = 6 V
resistive load
Maximum gate voltage required to trigger
Maximum gate current required to trigger
VGT
TJ = 25 °C
TJ = 125 °C
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
Anode supply = 6 V
resistive load
IGT
mA
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
VGD
IGD
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
0.25
6
V
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VS-VSK.41 VS-VSK.56 UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
15
mA
3000 (1 min)
3600 (1 s)
Maximum RMS insulation voltage
VINS
50 Hz
V
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 125 °C, linear to 0.67 VDRM
1000
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VS-VSK.41 VS-VSK.56 UNITS
Junction operating and storage
temperature range
TJ, TStg
-40 to +125
0.44 0.35
°C
Maximum internal thermal resistance,
junction to case per leg
RthJC
RthCS
DC operation
°C/W
Typical thermal resistance,
case to heatsink per module
Mounting surface flat, smooth and
greased
0.1
4
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
to heatsink
busbar
Mounting torque 10 %
Nm
3
75
g
Approximate weight
Case style
2.7
oz.
JEDEC®
AAP Gen 7 (TO-240AA)
R CONDUCTION PER JUNCTION
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
120° 90° 60°
0.138 0.177 0.235
0.111 0.143 0.189
DEVICES
UNITS
180°
0.110
0.088
120°
0.131
0.104
90°
0.17
60°
0.23
30°
180°
0.085
0.07
30°
VSK.41..
VSK.56..
0.342
0.273
0.345
0.275
°C/W
0.134
0.184
Note
•
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 26-Jul-2018
Document Number: 94630
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VS-VSK.41.., VS-VSK.56.. Series
www.vishay.com
Vishay Semiconductors
130
120
110
100
90
120
180°
120°
VSK.41 Series
RthJC (DC) = 0.44°C/W
100
80
60
40
20
0
90°
60°
30°
DC
RMS limit
180°
120°
90°
60°
30°
VSK.41 Series
Per leg, Tj = 125°C
80
0
10 20 30 40 50 60 70 80
Average on-state current (A)
0
10
20
30
40
50
Average on-state current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
800
130
120
110
100
90
VSK.41 Series
RthJC (DC) = 0.44 °C/W
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
700
600
500
400
300
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
DC
180°
120°
90°
60°
30°
80
Per leg
70
1
10
100
0
10 20 30 40 50 60 70 80
Average on-state current (A)
Number of equal amplitude half cycle current pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
80
70
60
50
40
30
20
10
0
900
180°
120°
90°
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintaned.
Initial Tj = 125°C
800
700
600
500
400
300
60°
30°
No Voltage Reapplied
Rated Vrrm reapplied
RMS limit
VSK.41 Series
Per leg, Tj = 125°C
Per leg
0.01
0.1
1
0
5
10 15 20 25 30 35 40 45 50
Average on-state current (A)
Pulse train duration (s)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 26-Jul-2018
Document Number: 94630
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VS-VSK.41.., VS-VSK.56.. Series
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Vishay Semiconductors
160
140
120
100
80
RthSA = 0.1 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
2 °C/W
180°
120°
90°
60°
30°
3 °C/W
5 °C/W
60
40
VSK.41 Series
Per module
Tj = 125°C
20
0
0
20
40
60
80
1000 20 40 60 80 100 120 140
Maximum allowable ambient temperature (°C)
Total RMS output current (A)
Fig. 7 - On-State Power Loss Characteristics
350
300
250
200
150
100
50
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
180°
(sine)
180°
(rect)
∼
2 x VSK.41 Series
single phase bridge connected
Tj = 125°C
0
0
100
20 40 60 80 100 120 140
0
20
40
60
80
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 8 - On-State Power Loss Characteristics
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
120°
(rect)
1 °C/W
3 x VSK.41 Series
three phase bridge connected
Tj = 125°C
0
20 40 60 80 100 120
Total output current (A)
10
40 20 40 60 80 100 120 140
Maximum allowable ambient temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Revision: 26-Jul-2018
Document Number: 94630
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-VSK.41.., VS-VSK.56.. Series
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130
120
110
100
90
140
VSK.56 Series
RthJC (DC) = 0.35°C/W
180°
120°
120
90°
60°
100
30°
DC
80
RMS limit
60
180°
40
120°
90°
60°
30°
VSK.56 Series
20
0
Per leg, Tj = 125°C
80
0
20
Average on-state current (A)
Fig. 13 - On-State Power Loss Characteristics
40
60
80
100
0
10 20 30 40 50 60 70
Average on-state current (A)
Fig. 10 - Current Ratings Characteristics
1100
130
120
110
100
90
VSK.56 Series
RthJC (DC) = 0.35 °C/W
At any rated load condition and with
rated Vrrm applied following surge
1000
900
800
700
600
500
400
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
DC
180°
120°
90°
60°
30°
80
Per leg
70
1
10
100
0
20
40
60
80
100
Number of equal amplitude half cycle current pulses (N)
Average on-state current (A)
Fig. 11 - Current Ratings Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
100
80
60
40
20
0
1300
180°
120°
90°
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintained.
Initial Tj = 125°C
1200
1100
1000
900
800
700
600
500
400
60°
30°
No Voltage Reapplied
Rated Vrrm reapplied
RMS limit
VSK.56 Series
Per leg
Per leg, Tj = 125°C
0.01
0.1
1
0
10 20 30 40 50 60 70
Average on-state current (A)
Pulse train duration (s)
Fig. 12 - On-State Power Loss Characteristics
Fig. 15 - Maximum Non-Repetitive Surge Current
Revision: 26-Jul-2018
Document Number: 94630
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.41.., VS-VSK.56.. Series
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Vishay Semiconductors
250
200
150
100
50
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.4 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
2 °C/W
4 °C/W
180°
120°
90°
60°
30°
VSK.56 Series
Per module
Tj = 125°C
0
0
0
0
20 40 60 80 100 120 1040 20 40 60 80 100 120 140
Total RMS output current (A)
Maximum allowable ambient temperature (°C)
Fig. 16 - On-State Power Loss Characteristics
600
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
180°
(sine)
180°
(rect)
2 °C/W
∼
2 x VSK.56 Series
single phase bridge connected
Tj = 125°C
20 40 60 80 100 120 1400 20 40 60 80 100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 17 - On-State Power Loss Characteristics
700
600
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
120°
(rect)
3 x VSK.56 Series
three phase bridge connected
Tj = 125°C
20 40 60 80 100 120 140 160 180
0
20 40 60 80 100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 18 - On-State Power Loss Characteristics
Revision: 26-Jul-2018
Document Number: 94630
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.41.., VS-VSK.56.. Series
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1000
100
10
1000
VSK. 41 Series
Per leg
VSK. 56 Series
Per leg
100
10
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
1
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Instantaneous on-state voltage (V)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Instantaneous on-state voltage (V)
Fig. 19 - On-State Voltage Drop Characteristics
Fig. 20 - On-State Voltage Drop Characteristics
1
Steady state value
RthJC = 0.44 °C/W
RthJC = 0.35 °C/W
(DC operation)
0.1
VSK.41 Series
VSK.56 Series
Per leg
0.01
0.001
0.01
0.1
1
10
Square wave pulse duration (s)
Fig. 21 - Thermal Impedance ZthJC Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
a)Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30%rated di/ dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(a)
(b)
(4)
(2) (1)
(3)
VGD
IGD
0.01
VSK.
IRK.41../ .56.. Series Fre q ue n c y Lim it e d b y PG( A V)
0.1
0.001
0.1 10 100 1000
1
Instantaneous gate current (A)
Fig. 22 - Gate Characteristics
Revision: 26-Jul-2018
Document Number: 94630
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VS-VSK.41.., VS-VSK.56.. Series
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ORDERING INFORMATION TABLE
Device code
VS-VS
K
T
56
/
16
1
2
3
4
5
1
2
3
4
5
-
Vishay Semiconductors product
Module type
-
-
-
-
Circuit configuration (see Circuit configuration table)
Current code
Voltage code (see Voltage Ratings table)
41 = 45 A
56 = 60 A
Note
•
To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT CONFIGURATION CODE
CIRCUIT DRAWING
(1)
~
1
VSKT
+
2
(2)
Two SCRs doubler circuit
T
3
4
5 7 6
-
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
(1)
~
1
VSKH
VSKL
VSKN
+
2
SCR/diode doubler circuit, positive
control
(2)
H
3
4
5
-
(3)
G1 K1
(4) (5)
(1)
~
1
+
2
SCR/diode doubler circuit, negative
control
(2)
L
3
6
7
-
(3)
K2 G2
(7) (6)
(1)
-
1
+
2
3
(2)
SCR/diode common anodes
N
4
5
+
(3)
G1 K1
(4) (5)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95368
Document Number: 94630
Revision: 26-Jul-2018
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Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Thyristor
DIMENSIONS in millimeters (inches)
Fast-on tab ꢀ.8 x 0.8 (0.110 x 0.03ꢁ
Viti M5 x 0.8
Screws M5 x 0.8
15.5 0.5
(0.6 0.0ꢀ0ꢁ
18 (0.7ꢁ REF.
80 0.3 (3.15 0.01ꢀꢁ
15 0.5 (0.59 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
9ꢀ 0.75 (3.6 0.030ꢁ
Document Number: 95368
Revision: 11-Nov-08
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1
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purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
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