VS-VSKT14208PBF [VISHAY]
Silicon Controlled Rectifier;
| 型号： | VS-VSKT14208PBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier |
| 文件： | 总14页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in three
basic configurations
• Simple mounting
• UL approved file E78996
• Designed and qualified for multiple level
New INT-A-PAK
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IT(AV)
135 A to 160 A
Modules - Thyristor, Standard
INT-A-PAK
APPLICATIONS
• DC motor control and drives
• Battery charges
Type
Package
Two SCRs doubler circuit, SCR/diode
doubler circuit, positive control,
SCR/diode doubler circuit, negative
control
• Welders
Circuit
• Power converters
• Lighting control
• Heat and temperature control
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.136..
VSK.142..
140
VSK.162..
160
UNITS
IT(AV)
85 °C
135
A
IT(RMS)
300
310
355
50 Hz
60 Hz
50 Hz
60 Hz
3200
4500
4870
A
ITSM
3360
4712
5100
51.5
102
119
I2t
kA2s
47
92.5
108
I2t
VRRM
TJ
515.5
400 to 1600
1013
1190
kA2s
V
Range
Range
400 to 1600
-40 to 125
400 to 1600
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM/VDRM, MAXIMUMREPETITIVE VRSM/VDSM, MAXIMUM NON-REPETITIVE
IRRM/IDRM
AT 125 °C
mA
TYPE
NUMBER
VOLTAGE
CODE
PEAK REVERSE VOLTAGE
V
PEAK REVERSE VOLTAGE
V
04
08
12
14
16
400
800
500
900
VS-VSK.136
VS-VSK.142
VS-VSK.162
1200
1400
1600
1300
1500
1700
50
Revision: 11-Apr-14
Document Number: 94513
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
VSK.136 VSK.142 VSK.162 UNITS
135
85
140
85
160
85
A
Maximum average on-state current
at case temperature
°C
Maximum RMS on-state current
IT(RMS)
300
310
355
4870
5100
4100
4300
119
108
84
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
3200
3360
2700
2800
51.5
47
4500
4712
3785
3963
102
No voltage
reapplied
Maximum peak, one-cycle
on-state, non-repetitive
surge current
A
ITSM
100%VRRM
reapplied
Sine half wave,
initial TJ =
TJ maximum
No voltage
reapplied
92.5
71.6
65.4
1013
0.83
1
Maximum I2t for fusing
I2t
kA2s
36.5
33.3
515.5
0.86
1.05
100%VRRM
reapplied
76.7
1190
0.8
Maximum I2t for fusing
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
(I > x IT(AV)), TJ maximum
kA2s
Low level value of threshold voltage
High level value of threshold voltage
VT(TO)1
VT(TO)2
V
0.98
Low level value on-state
slope resistance
rt1
rt2
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
(I > x IT(AV)), TJ maximum
2.02
1.65
1.78
1.43
1.67
1.38
m
High level value on-state
slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
VTM
VFM
IH
ITM = x IT(AV), TJ = 25 °C, 180° conduction
ITM = x IT(AV), TJ = 25 °C, 180° conduction
Anode supply = 6 V initial IT = 30 A, TJ = 25 °C
1.57
1.57
1.55
1.55
200
1.54
1.54
V
V
mA
Anode supply = 6 V resistive load = 1
Gate pulse: 10 V, 100 μs, TJ = 25 °C
Maximum latching current
IL
400
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Typical delay time
Typical rise time
tgd
tgr
1
2
Gate current = 1 A, dlg/dt = 1 A/μs
TJ = 25 °C
Vd = 0.67 % VDRM
μs
ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum
Typical turn-off time
tq
50 to 200
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and
off-state leakage current
IRRM
IDRM
,
TJ = 125 °C
50
mA
50 Hz, circuit to base,
all terminals shorted, t = 1 s
RMS insulation voltage
VINS
3500
1000
V
Critical rate of rise of
off-state voltage
TJ = TJ maximum,
exponential to 67 % rated VDRM
dV/dt
V/μs
Revision: 11-Apr-14
Document Number: 94513
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
tp 5 ms, TJ = TJ maximum
VALUES
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
12
3
W
A
PG(AV)
IGM
f = 50 Hz, TJ = TJ maximum
3
tp 5 ms, TJ = TJ maximum
Maximum peak negative
gate voltage
- VGT
10
TJ = - 40 °C
4
V
Maximum required DC
gate voltage to trigger
VGT
TJ = 25 °C
2.5
1.7
270
150
80
TJ = TJ maximum
Anode supply = 6 V,
resistive load; Ra = 1
TJ = - 40 °C
Maximum required DC
gate current to trigger
IGT
TJ = 25 °C
mA
TJ = TJ maximum
Maximum gate voltage
that will not trigger
VGD
IGD
0.3
10
V
TJ = TJ maximum, rated VDRM applied
Maximum gate current
that will not trigger
mA
A/μs
Maximum rate of rise of
turned-on current
dI/dt
TJ = TJ maximum, ITM = 400 A rated VDRM applied
300
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.136 VSK.142 VSK.162 UNITS
Maximum junction operating
temperature range
TJ
-40 to 125
°C
Maximum storage
temperature range
TStg
RthJC
RthCS
-40 to 150
Maximum thermal resistance,
junction to case per junction
DC operation
0.18
0.18
0.05
0.16
K/W
Nm
Maximum thermal resistance,
case to heatsink per module
Mounting surface, smooth, flat and greased
IAP to heatsink
busbar to IAP
Mounting
torque 10 %
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the
compound. Lubricated threads.
4 to 6
200
7.1
g
Approximate weight
Case style
oz.
INT-A-PAK
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
DEVICES
UNITS
180°
0.007
120°
90°
60°
30°
180°
0.009
120°
0.012
90°
60°
30°
VSK.136
VSK.142
VSK.162
0.01
0.013
0.0020
0.0032
0.0155
0.0020
0.0033
0.017
0.0021
0.0034
0.014
0.0023
0.0039
0.015
0.0023
0.0041
0.017
0.0020
0.0040
0.0019
0.0030
0.0019
0.0031
0.0018
0.0029
0.0022
0.0036
K/W
Note
•
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Apr-14
Document Number: 94513
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
350
300
250
200
150
100
50
130
VSK.136.. Series
thJC
DC
180
120
90
R
(DC) = 0.18 K/W
RMS Limit
120
110
100
60
Conduction Angle
30
90
80
70
30°
Conduction Period
60°
90°
VSK.136.. Series
Per Junction
120°
100
180°
T
= 125°C
J
0
0
20
40
60
80
120 140
0
50
100
150
200
250
Average Forward Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
130
120
110
100
90
3000
VSK.136.. Series
thJC
A t A ny Rated Load Condition And W ith
Rated V
RRM
Applied Following Surge.
R
(DC) = 0.18 K/W
2800
2600
2400
2200
2000
1800
1600
1400
1200
Initial T = 125°C
J
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction Period
30°
50
60°
90°
80
120°
VSK.136.. Series
Per Junction
180°
150
DC
70
0
100
200
250
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
300
250
200
150
100
50
3500
Maximum Non Repetitive Surge Current
180
120
90
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
3000
2500
2000
1500
1000
Initial T = 125°C
J
60
No Voltage Reapplied
30
Rated V
Reapplied
RRM
RMS Limit
Conduction Angle
VSK.136.. Series
Per Junction
VSK.136.. Series
Per Junction
T
= 125°C
J
0
0
30
60
90
120
150
0.01
0.1
Pulse Train Duration (s)
1
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Apr-14
Document Number: 94513
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
450
400
350
300
250
200
150
100
50
0
R
.
0
0
8
.
0
K
4
/
W
180
120
90
K
/
W
0.01
K
/
60
W
30
-
Δ
Conductio n Angle
0
.
4
R
K
/
W
VSK.136.. Series
Per Module
T
= 125°C
J
0
0
0
0
50
100
150
200
250
3
00
25
50
75
100
125
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
1000
900
800
700
600
500
400
300
200
100
0
t
h
S
A
180
(Sine)
180
(Rect)
0
.
3
5
K
/
W
2 x VSK.136.. Series
Single Phase Bridge
Connected
0
.
6 K
/
W
T
= 125°C
J
55
110
165
220
275
25
50
75
100
125
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
1500
1200
900
600
300
0
120
(Rect)
0
.
1
K
/
W
3 x VSK.136.. Series
Three Phase Bridge
C onnected
0
1
.
4
K
/
W
K
/
W
T
= 125°C
J
100
200
300
400
25
50
75
100
125
M axim um Allowable Am bient Tem perature (°C)
Total O utput Current (A)
Fig. 9 - On-State Power Loss Characteristics
Revision: 11-Apr-14
Document Number: 94513
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
130
120
110
100
90
350
300
250
200
150
100
50
DC
180
120
90
VSK.142.. Series
thJC
R
(DC) = 0.18 K/W
60
30
Conduction Angle
RMS Lim it
30
Conduction Period
60
90
VSK.142.. Series
Per Junction
80
120
180
120
T
= 125°C
J
70
0
0
30
60
90
150
0
50
100
150
200
250
Average Forward Current (A)
Average On-state Current (A)
Fig. 10 - Current Ratings Characteristics
Fig. 13 - On-State Power Loss Characteristics
130
4500
VSK.142.. Series
(DC) = 0.18 K/W
A t A ny Rated Load Condition And W ith
Rated V
Applied Following Surge.
Initial T = 125°C
R
thJC
RRM
120
110
100
90
J
4000
3500
3000
2500
2000
1500
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction Period
30
60
90
120
80
180
VSK.142.. Series
Per Junction
DC
200
70
0
50
100
150
250
1
10
100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Average On-state Current (A)
Fig. 11 - Current Ratings Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
250
200
150
100
50
5000
Maximum Non Repetitive Surge Current
180
120
90
Versus Pulse Train Duration. Control
4500
4000
3500
3000
2500
2000
1500
O f Conduction May Not Be Maintained.
Initial T = 125°C
J
60
No Voltage Reapplied
Rated VRRM Reapplied
30
RMS Limit
Conduction Angle
VSK.142.. Series
Per Junction
VSK.142.. Series
Per Junction
T = 125°C
J
0
0
30
60
90
120
150
0.01
0.1
1
Average On-state Current (A)
Pulse Train Duration (s)
Fig. 12 - On-State Power Loss Characteristics
Fig. 15 - Maximum Non-Repetitive Surge Current
Revision: 11-Apr-14
Document Number: 94513
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
400
300
200
100
0
0
0
.
1
.
1
2
t
6
h
K
S
K
/
A
/
W
180
120
90
W
0
.
2
5
K
/
W
60
30
0
.
6
K
/
W
C onductio n A n gle
1
K
/
W
VSK.142.. Series
Per Module
T
= 125°C
J
0
50
100
150
200
250
300
25
50
75
100
125
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 16 - On-State Power Loss Characteristics
1000
800
600
400
200
0
0
.
0
4
K
/
0
W
.
0
8
K
/
W
180
(Sine)
180
0
.
1
6
K
/
W
(Rect)
2 x VSK.142.. Series
Single Phase Bridge
C onnected
T
= 125°C
J
0
100
200
300
25
50
75
100
125
Total O utput Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 17 - On-State Power Loss Characteristics
1600
1200
800
400
0
R
=
0
.
0
2
K
120
/
W
(Rect)
-
Δ
R
3 x VSK.142.. Series
Three Phase Bridge
Connected
T
= 125°C
J
0
50 100 150 200 250 300 350 400 450
Total Output Current (A)
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 18 - On-State Power Loss Characteristics
Revision: 11-Apr-14
Document Number: 94513
7
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
130
120
110
100
90
400
350
300
250
200
150
100
50
VSK.162.. Series
DC
180
120
90
R
(DC) = 0.16 K/W
thJC
60
30
Conduction Angle
RMS Limit
30
Conduction Period
60
VSK.162.. Series
Per Junction
90
80
120
180
T
= 125°C
J
0
70
0
30
60
90
120
150
180
0
30 60 90 120 150 180 210 240 270
Average On-state Current (A)
Average Forw ard Current (A)
Fig. 19 - Current Ratings Characteristics
Fig. 22 - On-State Power Loss Characteristics
130
4500
VSK.162.. Series
(DC ) = 0.16 K/W
At A ny Rated Load Condition And W ith
Rated V
Applied Following Surge.
R
RRM
thJC
120
110
100
90
Initial T = 125°C
4000
3500
3000
2500
2000
1500
J
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction Period
30
60
80
90
120
150
70
VSK.162.. Series
Per Junction
180
DC
60
0
50
100
200
250
300
1
10
100
Num ber O f Equa l Am plitud e Half Cycle Current Pulses (N)
Average On-state Current (A)
Fig. 20 - Current Ratings Characteristics
Fig. 23 - Maximum Non-Repetitive Surge Current
400
5000
Maximum Non Repetitive Surge Current
VSK.162.. Series
Per Junction
Versus Pulse Train Duration. Control
350
300
250
200
150
100
50
4500
4000
3500
3000
2500
2000
1500
O f Conduction May Not Be Maintained.
T
= 125°C
J
Initial T = 125°C
J
No Voltage Reapplied
180
120
90
60
30
Rated V
Reapplied
RRM
RMS Limit
VSK.162.. Series
Per Junction
Conduction Angle
0
0
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
0.01
0.1
Pulse Train Duration (s)
1
Fig. 21 - On-State Power Loss Characteristics
Fig. 24 - Maximum Non-Repetitive Surge Current
Revision: 11-Apr-14
Document Number: 94513
8
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
600
500
400
300
200
100
0
R
t
h
S
A
180
120
90
=
0
.
0
2
K
/
60
W
-
30
Δ
R
Conductio n Angle
0
.
2
K
/
W
VSK.162.. Series
Per Module
T
= 125°C
J
0
100
200
300
40
0
25
50
75
100
125
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 25 - On-State Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
0
.
0
t
8
h
K
S
/
A
W
180
(Sine)
180
(Rect)
0
.
3
K
/
W
2 x VSK.162.. Series
Single Phase Bridge
Connected
0
.
6
K
/
W
T
= 125°C
J
25
50
75
100
125
0
50
100
150
200
250
300
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 26 - On-State Power Loss Characteristics
1500
1250
1000
750
500
250
0
0
.
0
4
K
/
W
0
.
0
8
K
/
W
120
(Rect)
3 x VSK.162.. Series
0
.
3
K
/
W
Three Phase Bridge
Connected
0
.
6
K
/
W
T
J
= 125°C
0
50 100 150 200 250 300 350 400 450
25
50
75
100
125
M axim um Allowable Am bient Tem perature (°C)
Total Output Current (A)
Fig. 27 - On-State Power Loss Characteristics
Revision: 11-Apr-14
Document Number: 94513
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Vishay Semiconductors
10000
1000
100
10
1
0.1
Steady State Value
(DC Operation)
T = 25˚C
J
T = 125˚C
J
0.01
0.001
VSK.136.. Series
Per Junction
VSK.136.. Series
1
0
1
2
3
4
5
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Instantaneous On-state Voltage (V)
Fig. 28 - On-State Voltage Drop Characteristics
Fig. 31 - Thermal Impedance ZthJC Characteristics
1
10000
1000
Steady State Value
(DC Operation)
T = 25˚C
J
T = 125˚C
J
100
10
0.1
VSK.142.. Series
Per Junction
VSK.142.. Series
1
0.01
0.01
0
1
2
3
4
5
0.1
1
10
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
Fig. 29 - On-State Voltage Drop Characteristics
Fig. 32 - Thermal Impedance ZthJC Characteristics
1
10000
1000
Steady State Value
(DC Operation)
T = 25˚C
J
T = 125˚C
J
0.1
100
10
VSK.162.. Series
Per Junction
VSK.162.. Series
1
0.01
0.01
0
1
2
3
4
5
0.1
1
10
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
Fig. 30 - On-State Voltage Drop Characteristics
Fig. 33 - Thermal Impedance ZthJC Characteristics
Revision: 11-Apr-14
Document Number: 94513
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
100
10
1
Rectangular gate p ulse
a)Recomm ended loa d line for
rated dI/dt: 20 V, 20 W
(1) PGM = 200 W , tp = 300 s
(2) PGM = 60 W , tp = 1 m s
(3) PGM = 30 W , tp = 2 m s
(4) PGM = 12 W , tp = 5 m s
tr = 0.5 s, tp >= 6 s
b)Recomm ended loa d line for
<= 30% ra ted d I/dt: 15 V, 40 W
tr = 1 s, tp >= 6 s
(a)
(b)
(4)
(3) (2)
(1)
VG D
IG D
Frequency Lim ited by PG(AV )
10 100
VSK.136..142..162.. Series
0.1
0.1
0.001
0.01
1
1000
Instantaneous Gate Current (A)
Fig. 34 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS KT 162 16 PbF
1
2
3
4
5
1
2
3
4
5
-
-
-
-
Vishay Semiconductors product
Circuit configuration
Current rating: IT(AV)
Voltage code x 100 = VRRM
-
PbF = Lead (Pb)-free
Note
•
To order the optional hardware go to www.vishay.com/doc?95172
Revision: 11-Apr-14
Document Number: 94513
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
CONFIGURATION CODE
~
VSKT...
+
Two SCRs doubler circuit
T
+
-
-
K1 K2
G1 G2
~
VSKH...
+
SCR/diode doubler circuit, positive control
H
+
-
-
K1
G1
~
VSKL...
+
SCR/diode doubler circuit, negative control
L
+
-
-
K2
G2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95067
Revision: 11-Apr-14
Document Number: 94513
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
INT-A-PAK IGBT/Thyristor
DIMENSIONS in millimeters (inches)
Ø 6.5 (0.25 DIA)
80 (3.15)
17 (0.67) 23 (0.91)
23 (0.91)
5 (0.20)
1
2
3
66 (2.60)
94 (3.70)
37 (1.44)
3 screws M6 x 10
Document Number: 95067
Revision: 15-Feb-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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