VS-VSKU105/04 [VISHAY]
Silicon Controlled Rectifier,;
| 型号： | VS-VSKU105/04 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, |
| 文件： | 总9页 (文件大小：270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-VSKU105.., VS-VSKV105.. Series
www.vishay.com
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules
Thyristor/Thyristor, 105 A
FEATURES
• High voltage
• Industrial standard package
• UL approved file E78996
• Low thermal resistance
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ADD-A-PAK
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRODUCT SUMMARY
• Up to 1600 V
IT(AV)
105 A
• High surge capability
• Easy mounting on heatsink
Type
Modules - Thyristor, Standard
MECHANICAL DESCRIPTION
ELECTRICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
105
UNITS
IT(AV)
85 °C
IT(RMS)
165
A
50 Hz
60 Hz
50 Hz
60 Hz
2000
ITSM
2094
20
I2t
kA2s
18.26
I2t
VRRM
TStg
TJ
200
kA2s
V
Range
400 to 1600
-40 to 130
-40 to 130
°C
°C
Revision: 24-Mar-14
Document Number: 94656
1
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VS-VSKU105.., VS-VSKV105.. Series
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
V
RSM, MAXIMUM
VDRM, MAXIMUM REPETITIVE
I
RRM, IDRM
VOLTAGE
CODE
REPETITIVE PEAK
REVERSE VOLTAGE
V
NON-REPETITIVE PEAK
PEAK OFF-STATE VOLTAGE,
TYPE NUMBER
AT 130 °C
mA
REVERSE VOLTAGE
V
GATE OPEN CIRCUIT
V
04
08
12
16
400
800
500
900
400
800
VS-VSK.105
15
1200
1600
1300
1700
1200
1600
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
A
180° conduction, half sine wave,
Maximum average on-state current
IT(AV)
105
TC = 85 °C
DC
TC
165
78
Maximum continuous RMS on-state current
IT(RMS)
°C
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
2000
2094
1682
1760
20
No voltage
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
Maximum peak, one-cycle non-repetitive
on-state current
ITSM
A
100 % VRRM
reapplied
No voltage
reapplied
18.26
14.14
12.91
Initial TJ =
TJ maximum
Maximum I2t for fusing
I2t
kA2s
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
Maximum I2t for fusing
I2t (1)
200
kA2s
Low level (3)
0.98
1.12
2.7
(2)
Maximum value of threshold voltage
VT(TO)
TJ = TJ maximum
V
High level (4)
Low level (3)
Maximum value of on-state
slope resistance
(2)
rt
TJ = TJ maximum
m
High level (4)
2.34
1.8
Maximum on-state voltage drop
VTM
ITM = x IT(AV) TJ = 25 °C
TJ = 25 °C, from 0.67 VDRM,
ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
V
Maximum non-repetitive rate of rise of
turned on current
dI/dt
150
A/μs
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum holding current
Maximum latching current
IH
IL
250
400
mA
TJ = 25 °C, anode supply = 6 V, resistive load
Notes
(1)
(2)
(3)
(4)
I2t for time tx = I2t x tx
Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
16.7 % x x IAV < I < x IAV
I > x IAV
2
)
Revision: 24-Mar-14
Document Number: 94656
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKU105.., VS-VSKV105.. Series
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Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
12
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
W
A
PG(AV)
IGM
3.0
3.0
- VGM
10
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
4.0
V
Anode supply = 6 V
resistive load
Maximum gate voltage required to trigger
Maximum gate current required to trigger
VGT
2.5
1.7
270
150
80
Anode supply = 6 V
resistive load
IGT
mA
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
VGD
IGD
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
0.25
6
V
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 130 °C, gate open circuit
20
mA
3000 (1 min)
3600 (1 s)
Maximum RMS insulation voltage
VINS
50 Hz
V
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 130 °C, linear to 0.67 VDRM
1000
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Junction operating and storage
temperature range
TJ, TStg
-40 to 130
°C
Maximum internal thermal resistance,
junction to case per leg
RthJC
RthCS
DC operation
0.22
0.1
°C/W
Nm
Typical thermal resistance,
case to heatsink per module
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
to heatsink
busbar
4
3
Mounting torque 10 %
75
g
Approximate weight
Case style
2.7
oz.
JEDEC®
AAP GEN VII (TO-240AA)
R CONDUCTION PER JUNCTION
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
DEVICES
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.105..
0.04
0.048
0.063
0.085
0.125
0.033
0.052
0.067
0.088
0.127
°C/W
Note
•
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 24-Mar-14
Document Number: 94656
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKU105.., VS-VSKV105.. Series
www.vishay.com
Vishay Semiconductors
130
120
110
100
90
260
240
RthJC (DC) = 0.22°C/W
180°
120°
220
90°
200
180
160
140
120
100
80
60°
30°
DC
RMS limit
180°
120°
90°
60°
30°
60
40
20
80
Per leg, Tj = 130°C
70
0
0
20
40
60
80
100 120
0
20 40 60 80 100 120 140 160 180
Average on-state current (A)
Average on-state current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
130
120
110
100
90
1800
RthJC (DC) = 0.22°C/W
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
1600
1400
1200
1000
800
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
DC
180°
120°
90°
60°
30°
Per leg
80
70
1
10
100
0
20 40 60 80 100 120 140 160 180
Average on-state current (A)
Number of equal amplitude half cycle current pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
200
180
160
140
120
100
80
2000
180°
120°
90°
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintained.
Initial Tj = 130°C
1800
1600
1400
1200
1000
800
60°
30°
No Voltage Reapplied
Rated Vrrm reapplied
RMS limit
60
40
Per leg
20
Per leg, Tj = 130°C
0
0.01
0.1
1
0
20
Average on-state current (A)
Fig. 3 - On-State Power Loss Characteristics
40
60
80
100 120
Pulse train duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 24-Mar-14
Document Number: 94656
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKU105.., VS-VSKV105.. Series
www.vishay.com
Vishay Semiconductors
700
600
500
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
180°
(sine)
180°
(rect)
2 °C/W
400
∼
300
200
100
0
2 x VSK.105 Series
single phase bridge connected
Tj = 130°C
0
40
80
120
160
2000 20 40 60 80 100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 7 - On-State Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
60°
(rect)
3 x VSK. 105 Series
6-pulse midpoint
connection bridge
Tj = 125°C
0
400
20 40 60 80 100 120 140
0
100
200
300
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 8 - On-State Power Loss Characteristics
1000
100
10
Per leg
Tj = 130°C
Tj = 25°C
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Instantaneous on-state voltage (V)
Fig. 9 - On-State Voltage Characteristics
Revision: 24-Mar-14
Document Number: 94656
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKU105.., VS-VSKV105.. Series
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Vishay Semiconductors
1
Steady state value
RthJC = 0.22 °C/W
(DC operation)
0.1
0.01
Per leg
0.001
0.001
0.01
0.1
1
10
Square wave pulse duration (s)
Fig. 10 - Thermal Impedance ZthJC Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 200 W, tp = 300 µs
a)Recommended load line for
rated di/dt: 20 V, 20ohms
tr = 0.5 µs, tp >= 6 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
b)Recommended load line for
<= 30%rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
(a)
(b)
(3)
(4)
(2)
(1)
VGD
IGD
0.01
Frequency Limited by PG(AV)
10 100 1000
V
S
K
.
105.. Series
0.1
0.001
0.1
1
Instantaneous gate current (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS
K
U
105
/
16
1
2
3
4
5
1
2
3
4
5
-
Vishay Semiconductors product
Module type
-
-
-
-
Circuit configuration (see Circuit Configuration table)
Current code (105 A)
Voltage code (see Voltage Ratings table)
Note
To order the optional hardware go to www.vishay.com/doc?95172
•
Revision: 24-Mar-14
Document Number: 94656
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKU105.., VS-VSKV105.. Series
www.vishay.com
Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
VSKU
CONFIGURATION CODE
(1)
+
1
-
2
3
Two SCRs common cathodes
U
(2)
4 5 7 6
-
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
VSKV
(1)
-
1
+
2
Two SCRs common anodes
V
(2)
3
4 5 7 6
+
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95368
Revision: 24-Mar-14
Document Number: 94656
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Thyristor
DIMENSIONS in millimeters (inches)
Fast-on tab ꢀ.8 x 0.8 (0.110 x 0.03ꢁ
Viti M5 x 0.8
Screws M5 x 0.8
15.5 0.5
(0.6 0.0ꢀ0ꢁ
18 (0.7ꢁ REF.
80 0.3 (3.15 0.01ꢀꢁ
15 0.5 (0.59 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
9ꢀ 0.75 (3.6 0.030ꢁ
Document Number: 95368
Revision: 11-Nov-08
For technical questions, contact: indmodules@vishay.com
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1
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Revision: 08-Feb-17
Document Number: 91000
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