VSB2200S [VISHAY]
High-Voltage Trench MOS Barrier Schottky Rectifier; 高压Trench MOS势垒肖特基整流器
| 型号： | VSB2200S |
| 厂家： | 
VISHAY |
| 描述： | High-Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总4页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
VSB2200S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
• Trench MOS Schottky technology
TMBS®
• Low forward voltage drop, low power
losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-204AL (DO-41)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
PRIMARY CHARACTERISTICS
definition
IF(AV)
2.0 A
200 V
40 A
VRRM
MECHANICAL DATA
IFSM
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability
rating
VF at IF = 2.0 A
TJ max.
0.65 V
150 °C
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
TYPICAL APPLICATIONS
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters or polarity protection application.
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
VRRM
IF(AV)
VSB2200S
200
UNIT
V
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1) (1)
2.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
40
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
Note
(1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air
Document Number: 89142
Revision: 29-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
VSB2200S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR
200 (minimum)
-
V
T
T
A = 25 °C
A = 125 °C
0.97
0.65
1.23
0.73
Instantaneous forward voltage (1)
IF = 2.0 A
VF
T
T
A = 25 °C
A = 125 °C
0.8
0.6
40
4
µA
mA
Reverse current per diode (2)
Typical juntion capacitance
VR = 200 V
IR
4.0 V, 1 MHz
CJ
110
-
pF
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
VSB2200S
UNIT
RθJA
RθJL
88
20
Typical thermal resistance (1)
°C/W
Note
(1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air
ORDERING INFORMATION (Example)
PREFERRED P/N
VSB2200S-M3/54
VSB2200S-M3/73
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
0.34
0.34
54
73
5500
3000
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
2.4
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
D = 0.8
D = 0.5
D = 0.3
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
2.0
1.6
1.2
0.8
0.4
0
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
1.6
tp
25
50
75
175
0
0.4
0.8
1.2
2.0
2.4
0
100
125
150
Ambient Temperature (°C)
Average Forward Current (A)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89142
Revision: 29-Sep-10
New Product
VSB2200S
Vishay General Semiconductor
10
1
1000
TA = 150 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 125 °C
100
TA = 100 °C
0.1
0.01
TA = 25 °C
10
0.1
1
10
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
100
10
1
TA = 150 °C
1
TA = 125 °C
0.1
TA = 100 °C
0.01
0.001
TA = 25 °C
40 50
Junction to Ambient
0.0001
20
30
60
70
80
90
100
0.1
1
10
0.01
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Document Number: 89142
Revision: 29-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
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