VSK.320 [VISHAY]
Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules); 标准恢复二极管， 250 A至320 A（ MAGN -A- PAK功率模块）
| 型号： | VSK.320 |
| 厂家： | 
VISHAY |
| 描述： | Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules) |
| 文件： | 总13页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSK.250, VSK.270, VSK.320 Series
Vishay Semiconductors
Standard Recovery Diodes, 250 A to 320 A
(MAGN-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated base plate
• 3000 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
MAGN-A-PAK
DESCRIPTION
This new VSK series of MAGN-A-PAKs uses high voltage
power diodes in two basic configurations. The
semiconductors are electrically isolated from the metal
base, allowing common heatsinks and compact assemblies
to be built. They can be interconnected to form single phase
or three phase bridges and the single diode module can be
used in conjunction with the thyristor modules as a
freewheel diode. These modules are intended for general
purpose applications such as battery chargers, welders and
plating equipment and where high voltage and high current
are required (motor drives, etc.).
PRODUCT SUMMARY
IF(AV)
250 A to 320 A
Type
Modules - Diode, High Voltage
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.250..
VSK.270..
270
VSK.320..
320
UNITS
A
250
IF(AV)
TC
100
100
100
°C
IF(RMS)
IFSM
393
424
502
50 Hz
60 Hz
50 Hz
60 Hz
7015
7345
246
8920
10 110
10 580
511
A
9430
398
I2t
kA2s
225
363
466
I2t
VRRM
TJ
2460
3980
5110
kA2s
V
400 to 3000
- 40 to 150
°C
Document Number: 93581
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSK.250, VSK.270, VSK.320 Series
Standard Recovery Diodes, 250 A to 320 A
Vishay Semiconductors
(MAGN-A-PAK Power Modules)
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM MAXIMUM
AT 150 °C
mA
VOLTAGE
CODE
TYPE NUMBER
PEAK REVERSE VOLTAGE
V
04
08
12
16
20
30
400
800
500
900
VSK.250
VSK.270
VSK.320
1200
1600
2000
3000
1300
1700
2100
3100
50
VSK.270
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
VSK.250 VSK.270 VSK.320 UNITS
250
100
270
100
320
100
A
Maximum average forward
current at case temperature
IF(AV)
°C
Maximum RMS forward current
IF(RMS)
393
424
502
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
7015
7345
5900
6180
246
8920
9340
7500
7850
398
10 110
10 580
8500
8900
511
No voltage
reapplied
Maximum peak, one-cycle
forward, non-repetitive
surge current
A
IFSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
225
363
466
Maximum I2t for fusing
I2t
kA2s
174
281
361
100 % VRRM
reapplied
159
257
330
Maximum I2t for fusing
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
2460
3980
5110
kA2s
Low level value of
threshold voltage
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
VF(TO)1
0.79
0.92
0.63
0.49
1.29
0.74
0.87
0.94
0.81
1.48
0.69
0.86
0.59
0.44
1.28
V
High level value of
threshold voltage
VF(TO)2
rf1
(I > x IF(AV)), TJ = TJ maximum
Low level forward
slope resistance
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
m
High level forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
IFM = x IF(AV), TJ = TJ maximum, 180° conduction
Average power = VF(TO) x IF(AV) + rf x (IF(RMS)
Maximum forward voltage drop
VFM
V
2
)
BLOCKING
PARAMETER
SYMBOL
IRRM
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse
leakage current
TJ = 150 °C
50
mA
V
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted, t = 1 s
3000
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Document Number: 93581
Revision: 02-Jul-10
VSK.250, VSK.270, VSK.320 Series
Standard Recovery Diodes, 250 A to 320 A
Vishay Semiconductors
(MAGN-A-PAK Power Modules)
THERMAL AND MECHANICAL SPECIFICATIONS
VALUES
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.250 VSK.270 VSK.320
Maximum junction operating and storage
temperature range
TJ, TStg
RthJC
- 40 to 150
0.125
°C
Maximum thermal resistance,
junction to case per junction
DC operation
0.16
K/W
Maximum resistance, case to heatsink
per module
Mounting surface flat, smooth and
greased
RthCS
0.035
4 to 6
A mounting compound is recommended
and the torque should be rechecked
after a period of about 3 hours to allow for
the spread of the compound.
MAP to heatsink
Mounting torque
Nm
10 %
busbar to MAP
8 to 10
800
g
Approximate weight
Case style
30
oz.
MAGN-A-PAK
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
AT TJ MAXIMUM
DEVICE
UNITS
180°
0.009
0.008
0.008
120°
90°
60°
30°
180°
0.007
0.007
0.007
120°
0.011
0.011
0.011
90°
60°
30°
VSK.250
VSK.270
VSK.320
0.010
0.012
0.010
0.014
0.014
0.013
0.020
0.020
0.020
0.032
0.032
0.032
0.015
0.015
0.015
0.021
0.020
0.020
0.033
0.033
0.033
K/W
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 93581
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VSK.250, VSK.270, VSK.320 Series
Standard Recovery Diodes, 250 A to 320 A
Vishay Semiconductors
(MAGN-A-PAK Power Modules)
150
300
180°
VSK.250.. Series
120°
90°
60°
30°
R
(DC) = 0.16 K/W
thJC
140
130
120
110
100
90
250
200
150
100
50
RMSLim it
Conduction Angle
Conduction Angle
VSK.250.. Series
30°
60°
90°
120°
180°
T = 150°C
J
80
0
0
50
100 150 200 250 300
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
0
50
100
150
200
250
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
150
450
VSK.250.. Se ries
thJC
DC
400
R
(DC) = 0.16 K/W
140
130
120
110
100
90
180°
120°
350
90°
60°
30°
300
250
200
150
100
50
Conduction Period
RM S Lim it
30°
60°
Conduction Period
VSK.250.. Series
90°
120°
T = 150°C
J
180°
DC
80
0
0
50 100 150 200 250 300 350 400
Average Forward Current (A)
0
50 100 150 200 250 300 350 400
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
600
500
400
300
200
100
0
t
h
S
0
A
.
0
8
K
0
/
W
.
1
2
K
/
W
W
180°
(Sine)
0
.
2
K
/
0
DC
.
2
5
K
/
W
VSK.250.. Series
Pe r Junc t io n
T = 15 0° C
J
0
50 100 150 200 250 300 350 400
Total RMSOutput Current (A)
25
50
75
100 125 150
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
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Document Number: 93581
Revision: 02-Jul-10
VSK.250, VSK.270, VSK.320 Series
Standard Recovery Diodes, 250 A to 320 A
Vishay Semiconductors
(MAGN-A-PAK Power Modules)
1200
1000
800
600
400
200
0
0
.
0
5
180°
K
/
(Sine)
180°
W
(Rect)
2 x VSK.250.. Series
Single Phase Bridge
Connected
T
= 1 5 0 ° C
J
0
500
25
50
75
100 125 150
0
100
200
300
400
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 6 - Forward Power Loss Characteristics
1800
1600
1400
1200
1000
800
0
0
.
.
0
0
4
0
2
.
K
0
K
/
6
W
/
K
W
/
W
120°
(Rect)
0
.
1
2
K
/
W
600
3 x VSK.250.. Series
Three Phase Bridge
Connected
400
200
T = 1 50 ° C
J
0
0
100 200 300 400 500 600 700 8
00
25
50
75
100 125 150
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
7000
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
Rated V
Applied Following Surge.
RRM
Initial T = 150°C
J
Initial T = 150°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Ra t e d V
Re a p p li e d
RRM
VSK.250.. Series
Per Junc tio n
VSK.250.. Series
Per Junc t io n
0.01
0.1
Pulse Tra in Dura t io n (s)
Fig. 9 - Maximum Non-Repetitive Surge Current
1
1
10
100
Numb er Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 8 - Maximum Non-Repetitive Surge Current
Document Number: 93581
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
VSK.250, VSK.270, VSK.320 Series
Standard Recovery Diodes, 250 A to 320 A
Vishay Semiconductors
(MAGN-A-PAK Power Modules)
150
140
130
120
110
10000
VSK.270.. Series
(DC) = 0.125 K/ W
T = 25 ° C
J
R
thJC
T = 15 0° C
J
1000
100
10
Conduction Period
30°
100
60°
90°
120°
VSK.250.. Series
Per Junc tio n
90
80
180°
DC
400
0
100
200
300
500
0.5
1
1.5
2
2.5
3
3.5
4
InstantaneousForward Voltage (V)
Average Forward Current (A)
Fig. 13 - Current Ratings Characteristics
Fig. 10 - Forward Voltage Drop Characteristics
1
400
Steady State Value:
350
300
250
200
150
100
50
R
= 0.16 K/ W
thJC
(DC Operation)
180°
120°
90°
0.1
0.01
60°
RM S Lim it
30°
Conduction Angle
VSK.270.. Series
VSK.250.. Series
Per Junc t ion
T = 1 50 ° C
J
0
0.001
0
50
100 150 200 250 300
0.001
0.01
0.1
1
10
100
Average Forward Current (A)
Square Wave Pulse Duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
Fig. 14 - Forward Power Loss Characteristics
150
500
VSK.270.. Se ries
thJC
DC
450
R
(DC) = 0.125 K/W
140
130
120
110
100
90
180°
400 120°
90°
350
60°
RM S Lim it
30°
300
Conduction Angle
250
200
30°
150
100
50
Conduction Period
VSK.270.. Series
60°
90°
120°
180°
T = 1 50 ° C
J
80
0
0
50
100 150 200 250 300
Average Forward Current (A)
Fig. 12 - Current Ratings Characteristics
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
Fig. 15 - Forward Power Loss Characteristics
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Document Number: 93581
Revision: 02-Jul-10
VSK.250, VSK.270, VSK.320 Series
Standard Recovery Diodes, 250 A to 320 A
Vishay Semiconductors
(MAGN-A-PAK Power Modules)
700
600
500
400
300
200
100
0
0
.
t
h
0
6
S
A
K
/
W
0
.
1
6
K
180°
/
W
(Sine)
0
.
2
5
K
/
W
DC
0
.
6
VSK.270.. Series
Pe r Junc t io n
T = 150 °C
K
/
W
J
0
25
50
75
100 125 150
0
50 100 150 200 250 300 350 400
Maximum Allowable Ambient Temperature (°C)
To t a l RM S O u t p u t C u r r e n t ( A )
Fig. 16 - Forward Power Loss Characteristics
1800
1600
1400
1200
1000
800
R
0
0
.
3
.
t
h
0
4
K
S
A
/
K
W
/
=
W
0
.
0
2
K
/
W
180°
(Sine)
180°
0
.
0
8
-
D
K
/
W
e
l
t
a
R
0
.
1
(Rect)
2
K
/
W
0
.
1
6
K
/
W
600
2 x VSK.270.. Series
400
Single Phase Bridge
Connected
200
T
= 1 5 0° C
J
0
0
100 200 300 400 500 60
0
25
50
75
100 125 150
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 17 - Forward Power Loss Characteristics
2400
2100
1800
1500
1200
900
0
t
.
0
h
S
4
A
K
/
W
120°
(Rect)
0
.
1
K
/
W
3 x VSK.270.. Series
600
Three Phase Bridge
Connected
300
T = 150°C
J
0
0
200
Total Output Current (A)
Fig. 18 - Forward Power Loss Characteristics
400
600
80
0
25
50
75
100 125 150
Maximum Allowable Ambient Temperature (°C)
Document Number: 93581
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
7
VSK.250, VSK.270, VSK.320 Series
Standard Recovery Diodes, 250 A to 320 A
Vishay Semiconductors
(MAGN-A-PAK Power Modules)
8000
1
At Any Rated Load Condition And With
Rated V Applied Following Surge.
Steady State Value:
= 0.45 K/W
RRM
R
thJC
(DC Operation)
7000
6000
5000
4000
3000
2000
Initial T = 150°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
0.1
0.01
VSK.270.. Series
Per Junc tio n
VSK.270.. Series
Per Junc t io n
0.001
0.001
0.01
0.1
1
10
100
1
10
100
Square Wave Pulse Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 19 - Maximum Non-Repetitive Surge Current
Fig. 22 - Thermal Impedance ZthJC Characteristics
150
9000
Maximum Non Repetitive Surge Current
VSK.320.. Series
thJC
VersusPulse Train Duration.
R
( DC ) = 0.125 K/ W
140
130
120
110
100
90
8000
Initial T = 150°C
J
No Voltage Reapplied
7000
6000
5000
4000
3000
2000
Ra t ed V
Rea p p lie d
RRM
Conduction Angle
30°
60°
90°
120°
180°
VSK.270.. Series
Per Junc t ion
80
0
50 100 150 200 250 300 350
Average Forward Current (A)
0.01
0.1
Pulse Tra in Dura t io n ( s)
1
Fig. 20 - Maximum Non-Repetitive Surge Current
Fig. 23 - Current Ratings Characteristics
150
10000
VSK.320.. Series
( DC ) = 0.125 K/ W
R
thJC
140
130
120
110
100
90
T = 25°C
J
T = 150°C
J
1000
100
10
Conduction Period
30°
60°
90°
120°
VSK.270.. Series
Per Junc tion
180°
DC
80
0.5
1
1.5
2
2.5
3
3.5
4
0
100 200 300 400 500 600
Average Forward Current (A)
InstantaneousForward Voltage (V)
Fig. 21 - Forward Voltage Drop Characteristics
Fig. 24 - Current Ratings Characteristics
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Document Number: 93581
Revision: 02-Jul-10
VSK.250, VSK.270, VSK.320 Series
Standard Recovery Diodes, 250 A to 320 A
Vishay Semiconductors
(MAGN-A-PAK Power Modules)
500
450
400
350
300
250
200
400
350
300
250
200
150
100
50
DC
180°
120°
90°
180°
120°
90°
60°
60°
30°
30°
RM S Lim it
RMS Lim it
Conduction Period
Conduction Angle
150
100
50
VSK.320.. Series
Per Junc tion
VSK.320.. Series
T = 150°C
J
T = 150°C
J
0
0
0
100 200 300 400 500 600
Average Forward Current (A)
0
50 100 150 200 250 300 350
Average Forward Current (A)
Fig. 25 - Forward Power Loss Characteristics
Fig. 26 - Forward Power Loss Characteristics
700
600
500
R
=
0
0
.
0
.
1
2
K
K
/
W
/
180°
(Sine)
W
-
D
0
.
1
e
6
l
t
K
a
/
W
R
400
300
200
100
0
DC
VSK.320.. Series
Pe r Junc t io n
T = 150°C
J
0
100
200
300
400
500
25
50
75
100 125 150
Total RMSOutput Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 27 - Forward Power Loss Characteristics
1400
1200
1000
800
600
400
200
0
0
0
0
.
0
.
0
.
0
3
4
6
K
K
/
K
0
/
/
.
W
0
W
W
8
K
/
W
180°
(Sine)
180°
0
.
1
2
K
/
W
W
(Rect)
0
.
1
6
K
/
0
.
2
5
K
/
W
2 x VSK.320.. Series
Si n g le Ph a se Bri d g e
Connected
T
= 150°C
J
0
100 200 300 400 500
Total Output Current (A)
6
00
25
50
75
100 125 150
Maximum Allowable Ambient Temperature (°C)
Fig. 28 - Forward Power Loss Characteristics
Document Number: 93581
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
9
VSK.250, VSK.270, VSK.320 Series
Standard Recovery Diodes, 250 A to 320 A
Vishay Semiconductors
(MAGN-A-PAK Power Modules)
2800
2400
2000
1600
1200
800
R
t
h
S
A
0
.
0
0
.
0
2
4
K
K
/
/
W
W
W
0
-
D
.
0
5
e
K
l
/
t
120°
a
R
(Rect)
0
.
1
2
K
/
W
3 x VSK.320.. Series
Three Phase Bridge
Connected
400
T = 150 ° C
J
0
0
200
400
600
800
1000
25
50
75
100 125 150
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 29 - Forward Power Loss Characteristics
10000
9000
8000
7000
6000
5000
4000
3000
2000
10000
1000
100
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
T = 2 5° C
RRM
J
Initial T = 150°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
T = 1 5 0° C
J
VSK.320.. Series
Per Junc tio n
VSK.320.. Series
Per Junc t io n
0.5
1
1.5
2
2.5
3
3.5
4
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Insta nt a n e o us Fo rwa rd Vo lt ag e (V)
Fig. 30 - Maximum Non-Repetitive Surge Current
Fig. 32 - Forward Voltage Drop Characteristics
10000
1
Maximum Non Repetitive Surge Current
St e a d y St a t e V a lu e :
VersusPulse Train Duration.
9000
8000
7000
6000
5000
4000
3000
2000
R
= 0. 45 K/ W
thJC
(DC Operation)
Initial T = 150°C
J
No Voltage Reapplied
Ra t ed V
Re a p p lie d
RRM
0.1
0.01
VSK.320.. Series
Per Junc t io n
VSK.320.. Series
Per Junc tio n
0.001
0.01
0.1
Pulse Train Duration (s)
1
0.001
0.01
Square Wave Pulse Duration (s)
Fig. 33 - Thermal Impedance ZthJC Characteristics
0.1
1
10
100
Fig. 31 - Maximum Non-Repetitive Surge Current
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10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93581
Revision: 02-Jul-10
VSK.250, VSK.270, VSK.320 Series
Standard Recovery Diodes, 250 A to 320 A
Vishay Semiconductors
(MAGN-A-PAK Power Modules)
ORDERING INFORMATION TABLE
Device code
VSK
D
320
-
24
1
2
3
4
1
-
-
-
-
Module type
2
3
4
Circuit configuration (see Circuit Configuration table)
Current rating: IF(AV) rounded
Voltage code x 100 = VRRM (see Voltage Ratings table)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
CONFIGURATION CODE
VSKD...
-
+
~
Two diodes doubler circuit
D
C
J
-
+
~
VSKC...
-
+
-
Two diodes common cathodes
+
-
-
VSKJ...
-
+
+
Two diodes common anodes
-
+
+
VSKE...
+
-
Single diode
E
+
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95086
Document Number: 93581
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
11
Outline Dimensions
Vishay Semiconductors
MAGN-A-PAK
DIMENSIONS in millimeters (inches)
Ø 5.5
35 (1.38)
28 (1.12)
3 screws M8 x 1.25
80 (3.15)
9 (0.35)
6 (0.24)
115 (4.53)
HEX 13
92 (3.62)
Notes
• Dimensions are nominal
• Full engineering drawings are available on request
• UL identification number for gate and cathode wire: UL 1385
• UL identification number for package: UL 94 V-0
Document Number: 95086
Revision: 03-Aug-07
For technical questions, contact: indmodules@vishay.com
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1
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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