VSKH26/16S90P [VISHAY]
Silicon Controlled Rectifier, 42.39A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-240AA, ROHS COMPLIANT, ADD-A-PAK-5;
| 型号： | VSKH26/16S90P |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 42.39A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-240AA, ROHS COMPLIANT, ADD-A-PAK-5 局域网 栅 栅极 |
| 文件： | 总9页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSK.26..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 27 A
FEATURES
• High voltage
• Industrial standard package
• Thick copper baseplate
• UL E78996 approved
• 3500 VRMS isolating voltage
• Totally lead (Pb)-free
RoHS
COMPLIANT
• Designed and qualified for industrial level
ADD-A-PAKTM
BENEFITS
• Up to 1600 V
PRODUCT SUMMARY
IT(AV) or IF(AV)
27 A
• Fully compatible TO-240AA
• High surge capability
• Easy mounting on heatsink
• Al203 DBC insulator
• Heatsink grounded
MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAKTM modules combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu baseplate
allows an easier mounting on the majority of heatsink with
increased tolerance of surface roughness and improved
thermal spread. The Generation 5 of AAP modules is
manufactured without hard mold, eliminating in this way any
possible direct stress on the leads.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery chargers.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
27
UNITS
I
T(AV) or IF(AV)
85 °C
IO(RMS)
As AC switch
50 Hz
60
A
400
ITSM,
IFSM
60 Hz
420
800
50 Hz
I2t
A2s
60 Hz
730
I2√t
VRRM
TStg
TJ
8000
A2√s
Range
400 to 1600
V
- 40 to 125
°C
Document Number: 94418
Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
VSK.26..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 27 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM
V
RSM, MAXIMUM
V
DRM, MAXIMUM REPETITIVE
IRRM,
IDRM
AT 125 °C
mA
VOLTAGE
CODE
REPETITIVE PEAK
REVERSE VOLTAGE
V
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
PEAK OFF-STATE VOLTAGE,
TYPE NUMBER
GATE OPEN CIRCUIT
V
04
06
08
10
12
14
16
400
600
500
700
400
600
800
900
800
VSK.26
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
UNITS
A
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average on-state current
(thyristors)
IT(AV)
180° conduction, half sine wave,
TC = 85 °C
27
Maximum average forward current
(diodes)
IF(AV)
Maximum continuous RMS on-state current
as AC switch
or
IO(RMS)
60
I(RMS)
I(RMS)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
400
420
No voltage
reapplied
Sinusoidal
half wave,
initial TJ = TJ maximum
Maximum peak, one-cycle
non-repetitive on-state
or forward current
ITSM
or
IFSM
335
100 % VRRM
reapplied
350
470
TJ = 25 °C, no voltage reapplied
490
800
No voltage
reapplied
730
Initial TJ = TJ maximum
560
100 % VRRM
reapplied
Maximum I2t for fusing
I2t
A2s
510
1100
1000
8000
0.92
0.95
12.11
11.82
TJ = 25 °C, no voltage reapplied
Maximum I2√t for fusing
I2√t (1)
A2√s
t = 0.1 to 10 ms, no voltage reapplied
Low level (3)
High level (4)
(2)
Maximum value or threshold voltage
VT(TO)
TJ = TJ maximum
V
Low level (3)
Maximum value of on-state
slope resistance
(2)
rt
TJ = TJ maximum
High level (4)
mΩ
V
VTM
VFM
ITM = π x IT(AV)
TJ = 25 °C
Maximum peak on-state or forward voltage
1.95
150
IFM = π x IF(AV)
Maximum non-repetitive rate of
rise of turned on current
TJ = 25 °C, from 0.67 VDRM
,
dI/dt
A/µs
I
TM = π x IT(AV), Ig = 500 mA, tr < 0.5 µs, tp > 6 µs
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum holding current
Maximum latching current
IH
IL
200
400
mA
TJ = 25 °C, anode supply = 6 V, resistive load
Notes
(1)
(3)
I2t for time tx = I2√t x √tx
16.7 % x π x IAV < I < π x IAV
I > π x IAV
(2)
2
(4)
Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94418
Revision: 22-Apr-08
VSK.26..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 27 A
Vishay High Power Products
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
10
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
W
A
PG(AV)
IGM
2.5
2.5
- VGM
10
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
4.0
V
Anode supply = 6 V
resistive load
Maximum gate voltage required to trigger
Maximum gate current required to trigger
VGT
2.5
1.7
270
150
80
Anode supply = 6 V
resistive load
IGT
mA
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
VGD
IGD
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
0.25
6
V
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM
IDRM
,
TJ = 125 °C, gate open circuit
15
mA
2500 (1 min)
3500 (1 s)
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted
TJ = 125 °C, linear to 0.67 VDRM
V
Maximum critical rate of rise of off-state voltage dV/dt (1)
Note
500
V/µs
(1)
Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT26/16AS90
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Junction operating and storage
temperature range
TJ, TStg
- 40 to 125
°C
Maximum internal thermal resistance,
junction to case per module
RthJC
RthCS
DC operation
0.31
0.1
5
K/W
Nm
Typical thermal resistance,
case to heatsink
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread
of the compound.
to heatsink
busbar
Mounting torque 10 %
3
110
4
g
Approximate weight
Case style
oz.
JEDEC
TO-240AA
ΔR CONDUCTION PER JUNCTION
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
DEVICES
UNITS
°C/W
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.26
0.23
0.27
0.34
0.48
0.73
0.17
0.28
0.36
0.49
0.73
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94418
Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
VSK.26..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 27 A
Vishay High Power Products
130
70
VSK.26.. Series
DC
R
(DC) = 0.62 K/W
180°
thJC
60
120°
90°
60°
30°
120
110
100
90
50
RMS Lim it
40
30
20
10
0
Conduction Angle
30°
Conduction Period
60°
90°
120°
20
180°
25
VSK.26.. Series
Per Junc t io n
T = 125° C
J
80
0
5
10
15
30
0
10
20
30
40
50
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
130
120
110
100
90
400
VSK.26.. Series
thJC
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
R
(DC) = 0.62 K/W
RRM
Initial T = 125°C
J
350
300
250
200
150
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Conduction Period
30°
60°
90°
120°
VSK.26.. Series
Pe r Jun c t io n
180°
DC
80
0
10
20
30
40
50
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
50
400
180°
120°
90°
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
40
30
20
10
0
350
60°
Initial T = 125°C
J
30°
No Voltage Reapplied
Rated V
Reapplied
RRM
RMS Lim it
300
250
200
150
Conduction Angle
VSK.26.. Series
Pe r Jun c t io n
T = 125°C
VSK.26.. Series
Pe r Jun c t io n
J
0
5
10
15
20
25
30
0.01
0.1
Pulse Train Duration (s)
1
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94418
Revision: 22-Apr-08
VSK.26..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 27 A
Vishay High Power Products
100
180°
t
0
h
.
0
90
5
S
A
.
7
120°
90°
60°
30°
K
/
K
1
W
/
W
K
80
70
60
50
40
30
20
10
0
/
W
Conduction Angle
4
K
/
W
VSK.26.. Series
Pe r Mo d ule
J
T = 125° C
0
0
0
10
20
30
40
50
6
0
0
20
40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
Total RMSOutput Current (A)
Fig. 7 - On-State Power Loss Characteristics
250
200
150
100
50
0
.
3
K
/
W
180°
(Sine)
180°
0
.
7
K
/
W
(Rect)
2 x VSK.26.. Series
Sin g le Ph a se Br id g e
Connected
8
K
/
W
T
= 125°C
J
0
10
20
30
40
50
600
20
40 60
80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
350
300
250
200
150
100
50
R
t
h
0
S
.
A
2
K
=
/
W
0
0
.
1
.
3
K
K
/
/
W
W
-
0
.
D
4
K
e
l
/
W
t
120°
(Rect)
a
0
.
5
R
K
/
W
0
.
7
K
/
W
1
K
/
W
3 x VSK.26.. Series
Three Phase Bridge
Connected
T = 125°C
J
0
10 20 30 40 50 60 70 800
20 40
60 80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94418
Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
VSK.26..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 27 A
Vishay High Power Products
1000
100
T = 2 5°C
J
10
1
T = 125 ° C
J
VSK.26.. Series
Per Junc tio n
0
1
2
3
4
5
6
7
InstantaneousOn-state Voltage (V)
Fig. 10 - On-State Voltage Drop Characteristics
1
Steady State Value:
= 0.62 K/W
R
thJC
(DC Operation)
0.1
VSK.26.. Series
0.01
0.001
0.01
0.1
1
10
Sq u a re Wa v e Pu lse D u r a t io n ( s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 25 ms
(4) PGM = 10W, tp = 5ms
a)Recommended load line for
rated di/dt: 20V, 30ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30%rated di/dt: 20V, 65ohms
tr = 1 µs, tp >= 6 µs
(a)
(b)
(4) (3) (2) (1)
VGD
IGD
0.01
VSK.26.. Series
Fre q ue n c y Lim it e d b y PG( AV )
0.1
0.001
0.1
1
10
100
1000
InstantaneousGate Current (A)
Fig. 12 - Gate Characteristics
www.vishay.com
6
For technical questions, contact: ind-modules@vishay.com
Document Number: 94418
Revision: 22-Apr-08
VSK.26..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 27 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
VSK
T
26
/
16 S90
P
1
2
3
4
5
6
1
2
3
4
5
-
-
-
-
-
Module type
Circuit configuration (see end of datasheet)
Current code (1)
Voltage code (see Voltage Ratings table)
dV/dt code: S90 = dV/dt 1000 V/µs
No letter = dV/dt 500 V/µs
6
-
P = Lead (Pb)-free
(1) Available with no auxiliary cathode
(for details see dimensions - link at the end of datasheet)
To specify change: 26 to 27
e.g.: VSKT27/16P etc.
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
VSKT
VSKH
VSKL
VSKN
(1)
(1)
(1)
(1)
~
~
~
-
1
1
1
1
+
(2)
+
(2)
+
(2)
+
(2)
2
3
2
2
3
2
3
3
4 5
4 5 7 6
4 5
7 6
-
-
(3)
-
+
(3)
(3)
G1 K1
(4) (5)
(3)
G1 K1
(4) (5)
K2 G2
(7) (6)
G1 K1 K2 G2
(4) (5) (7) (6)
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95085
Document Number: 94418
Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
Outline Dimensions
Vishay Semiconductors
ADD-A-PAK SCR
DIMENSIONS in millimeters (inches)
Fast-on tab 2.8 x 0.8 (0.110 x 0.037
With no auxiliary cathode
13.8 (0.547
Viti M5 x 0.8
Screws M5 x 0.8
15.6 0.5
(0.6 0.01ꢀ97
18 (0.97 REF.
80 0.3 (3.15 0.01187
Detail Z
15 0.5 (0.5ꢀ 0.01ꢀ97
20 0.5 (0.9ꢀ 0.01ꢀ97
20 0.5 (0.9ꢀ 0.01ꢀ97
ꢀ2 0.95 (3.6 0.02ꢀ537
Document Number: 95085
Revision: 29-Sep-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
相关型号：
VSKH27/08S90P
Silicon Controlled Rectifier, 27000mA I(T), 800V V(RRM), ROHS COMPLIANT PACKAGE-5
VISHAY
VSKH27/10P
Silicon Controlled Rectifier, 27000mA I(T), 1000V V(RRM), ROHS COMPLIANT PACKAGE-5
VISHAY
VSKH27/10S90P
Silicon Controlled Rectifier, 27000mA I(T), 1000V V(RRM), ROHS COMPLIANT PACKAGE-5
VISHAY
VSKH27/12P
Silicon Controlled Rectifier, 27000mA I(T), 1200V V(RRM), ROHS COMPLIANT PACKAGE-5
VISHAY
VSKH27/12S90P
Silicon Controlled Rectifier, 27000mA I(T), 1200V V(RRM), ROHS COMPLIANT PACKAGE-5
VISHAY
VSKH27/14S90P
Silicon Controlled Rectifier, 27000mA I(T), 1400V V(RRM), ROHS COMPLIANT PACKAGE-5
VISHAY
VSKH27/16S90P
Silicon Controlled Rectifier, 27000mA I(T), 1600V V(RRM), ROHS COMPLIANT PACKAGE-5
VISHAY
VSKH41/04P
Silicon Controlled Rectifier, 70.65A I(T)RMS, 45000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-240AA, ROHS COMPLIANT, ADD-A-PAK-5
VISHAY
VSKH41/04S90P
Silicon Controlled Rectifier, 70.65A I(T)RMS, 45000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-240AA, ROHS COMPLIANT, ADD-A-PAK-5
VISHAY
VSKH41/06
Silicon Controlled Rectifier, 70.65A I(T)RMS, 45000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-240AA, ROHS COMPLIANT, TO-240AA COMPATIBLE, ADD-A-PAK-5
VISHAY
©2020 ICPDF网 联系我们和版权申明