VSKT170-16 [VISHAY]
SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A; SCR / SCR和SCR /二极管（ MAGN -A- PAK功率模块） ， 170 A / 250一个
| 型号： | VSKT170-16 |
| 厂家： | 
VISHAY |
| 描述： | SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A |
| 文件： | 总12页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
FEATURES
• High voltage
• Electrically isolated base plate
• 3500 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
MAGN-A-PAK
• Designed and qualified for industrial level
DESCRIPTION
This new VSK series of MAGN-A-PAK modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing common
heatsinks and compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.
PRODUCT SUMMARY
IT(AV)
170 A/250 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.170..
170
VSK.250..
250
UNITS
IT(AV)
85 °C
IT(RMS)
377
555
A
50 Hz
60 Hz
50 Hz
60 Hz
5100
8500
ITSM
5350
8900
131
361
I2t
kA2s
119
330
I2t
1310
3610
kA2s
V
V
DRM/VRRM
Up to 1600
Up to 2000
TJ
Range
- 40 to 130
°C
Document Number: 94417
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 130 °C
MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
BLOCKING VOLTAGE
V
04
08
10
12
14
16
04
08
10
12
14
16
18
20
400
800
500
900
1000
1200
1400
1600
400
1100
1300
1500
1700
500
VSK.170-
50
800
900
1000
1200
1400
1600
1800
2000
1100
1300
1500
1700
1900
2100
50
60
VSK.250-
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170 VSK.250 UNITS
170
85
250
85
A
Maximum average on-state current
at case temperature
IT(AV)
180° conduction, half sine wave
°C
Maximum RMS on-state current
IT(RMS)
As AC switch
377
555
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
5100
5350
4300
4500
131
8500
8900
7150
7500
361
No voltage
reapplied
A
Maximum peak, one-cycle on-state
non-repetitive, surge current
ITSM
100 % VRRM
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
No voltage
reapplied
119
330
Maximum I2t for fusing
I2t
kA2s
92.5
84.4
1310
255
100 % VRRM
reapplied
233
Maximum I2t for fusing
I2t
VT(TO)1
VT(TO)2
rt1
t = 0.1 ms to 10 ms, no voltage reapplied
3610
kA2s
(16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
0.89
1.12
1.34
0.96
1.60
500
0.97
1.00
0.60
0.57
1.44
500
V
(I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum
m
V
rt2
(I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum
ITM = x IT(AV), TJ = TJ maximum, 180° conduction,
average power = VT(TO) x IT(AV) + rf x (IT(RMS)
VTM
IH
2
)
Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C
mA
Anode supply = 12 V, resistive load = 1 ,
gate pulse: 10 V, 100 μs, TJ = 25 °C
Maximum latching current
IL
1000
1000
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Document Number: 94417
Revision: 02-Jul-10
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
Vishay Semiconductors
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170 VSK.250 UNITS
Typical delay time
Typical rise time
td
tr
1.0
TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs
Vd = 0.67 % VDRM
2.0
μs
ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum;
Typical turn-off time
tq
50 to 150
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170 VSK.250 UNITS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum
50
60
mA
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
TJ = TJ maximum, exponential to 67 % rated VDRM
3000
1000
V
Critical rate of rise of off-state voltage
dV/dt
V/μs
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
tp 5 ms, TJ = TJ maximum
f = 50 Hz, TJ = TJ maximum
tp 5 ms, TJ = TJ maximum
tp 5 ms, TJ = TJ maximum
TJ = - 40 °C
VSK.170 VSK.250
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
10.0
2.0
W
A
PG(AV)
+ IGM
- VGT
3.0
5.0
4.0
V
Anode supply = 12 V,
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
VGT
TJ = 25 °C
3.0
resistive load; Ra = 1
TJ = TJ maximum
TJ = - 40 °C
2.0
350
200
100
0.25
10.0
Anode supply = 12 V,
resistive load; Ra = 1
IGT
TJ = 25 °C
mA
TJ = TJ maximum
Maximum gate voltage that will not trigger
Maximum gate current that willnot trigger
VGD
IGD
TJ = TJ maximum, rated VDRM applied
TJ = TJ maximum, rated VDRM applied
V
mA
TJ = TJ maximum, ITM = 400 A,
rated VDRM applied
Maximum rate of rise of turned-on current
dI/dt
500
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170 VSK.250
UNITS
Junction operating and storage
temperature range
TJ, TStg
- 40 to 130
°C
Maximum thermal resistance,
junction to case per junction
RthJC
RthCS
DC operation
0.17
0.02
0.125
0.02
K/W
Nm
Typical thermal resistance,
case to heatsink per module
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of about 3 hours to allow for the
spread of the compound.
MAP to heatsink
busbar to MAP
Mounting torque 10 %
4 to 6
500
g
Approximate weight
Case style
17.8
oz.
MAGN-A-PAK
Document Number: 94417
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
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www.vishay.com
3
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
Vishay Semiconductors
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION AT TJ MAXIMUM
RECTANGULAR CONDUCTION AT TJ MAXIMUM
DEVICES
UNITS
180°
0.009
0.009
120°
0.010
0.010
90°
60°
30°
180°
0.007
0.007
120°
0.011
0.011
90°
60°
30°
VSK.170-
VSK.250-
0.010
0.014
0.020
0.020
0.032
0.032
0.015
0.015
0.020
0.020
0.033
0.033
K/W
Note
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
•
130
120
110
100
90
300
250
200
150
100
50
VSK.170.. Series
180°
120°
90°
R
thJC (DC) = 0.17 K/W
60°
30°
Conduction Angle
RMS Limit
Conduction Angle
30°
80
60°
90°
VSK.170.. Series
Per Junction
TJ = 125°C
120°
180°
70
60
0
0
40
80
120
160
200
0
40
80
120
160
200
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
130
120
110
100
90
350
DC
VSK.170.. Series
thJC
R
(DC) = 0.17 K/W
180°
300
120°
90°
250
200
150
100
50
60°
30°
Conduction Period
RMS Limit
30°
Conduction Period
60°
90°
120°
80
VSK.170.. Series
Per Junction
TJ = 125°C
70
180°
DC
250
60
0
0
50
100
150 200
300
0
50
100 150 200 250 300
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
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Document Number: 94417
Revision: 02-Jul-10
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
Vishay Semiconductors
5000
4500
4000
3500
3000
2500
2000
5000
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration. Control
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 130°C
Of Conduction May Not Be Maintained .
4500
4000
3500
3000
2500
2000
Initial TJ = 130°C
No Voltage Reapplied
Rated VRRM Reapplied
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
VSK.170.. Series
Per Junction
VSK.170.. Series
Per Junction
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
400
0
0
.
180°
1
.
2
6
t
h
K
0
5
K
/
S
A
/
.
120°
2
W
350
W
5
K
90°
/
0
W
.
3
K
60°
/
W
300
30°
0
.
3
250
K
/W
200
150
100
50
Conduction Angle
VSK.170.. Series
Per Module
TJ = 130°C
0
0
50 100 150 200 250 300 350
Total RMS Output Current (A)
4
00
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
1000
900
800
700
600
500
400
300
200
100
0
0
.
0
8
0
K
/
.
1
W
K
/
W
0
.1
2
K
180°
(Sine)
180°
/
W
0
.
1
6
K
/
W
(Rect)
0
.
3
5
K
/
W
2 x VSK.170.. Series
Single Phase Bridge
Connected
TJ = 130°C
0
50 100 150 200 250 300
Total Output Current (A)
3
50
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
Document Number: 94417
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
Vishay Semiconductors
1600
1400
1200
1000
800
600
400
200
0
120°
0
.
1
(Rect)
K
/
W
W
0
.
1
2
K
/
0
.
2
5
3 x VSK.170.. Series
Three Phase Bridge
Connected
K
/
W
TJ = 130°C
0
100
200
300
400
5
00
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 9 - On-State Power Loss Characteristics
130
120
110
100
90
350
300
250
VSK.250.. Series
180°
120°
90°
RthJC(DC) = 0.125 K/W
60°
30°
Conduction Angle
200
150
100
50
RMS Limit
30°
100
Conduction Angle
60°
80
90°
VSK.250.. Series
Per Junction
120°
180°
70
T
= 130°C
J
60
0
0
50
150
200
250
300
0
50
100
150
200
250
Average On-state Current (A)
Average On-state Current (A)
Fig. 10 - Current Ratings Characteristics
Fig. 12 - On-State Power Loss Characteristics
130
500
VSK.250.. Series
DC
180°
120°
90°
60°
30°
450
RthJC (DC) = 0.125 K/W
120
110
100
90
400
350
300
250
200
150
100
50
Conduction Period
RMS Limit
30°
100
60°
90°
120°
180°
Conduction Period
80
VSK.250.. Series
Per Junction
TJ = 130°C
70
DC
60
0
0
200
300
400
500
0
50 100 150 200 250 300 350 400
Average On-state Current (A)
Average On-state Current (A)
Fig. 11 - Current Ratings Characteristics
Fig. 13 - On-State Power Loss Characteristics
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Document Number: 94417
Revision: 02-Jul-10
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
Vishay Semiconductors
7500
7000
6500
6000
5500
5000
4500
9000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration. Control
Initial T = 130°C
Of Conduction May Not Be Maintained
Initial TJ = 130°C
.
J
8000
7000
6000
5000
4000
3000
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated VRRM Reapplied
VSK.250.. Series
Per Junction
4000 VSK.250.. Series
Per Junction
3500
1
10
100
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
700
0
.
1
2
180°
K
/
600
W
120°
0
.
1
6
90°
60°
30°
K
/
W
500
400
300
200
100
0
Conduction angle
0
.
2
5
K
/
W
0
.
3
K
/
W
VSK.250.. Series
Per Module
TJ = 130°C
0
100
200 300 400 500
6
00
20
40
60
80
100
120
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 16 - On-State Power Loss Characteristics
1400
1200
1000
800
600
400
200
0
0
.
0
4
K
/
W
0
.
0
6
K
/
W
180°
(Sine)
180°
(Rect)
0
.
1
2
K
/
W
0
.
1
6
K
/
W
2 x VSK.250.. Series
Single Phase Bridge
Connected
TJ = 130°C
0
100
200
300
400
50
0
20
40
60
80
100
120
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 17 - On-State Power Loss Characteristics
Document Number: 94417
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
7
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
Vishay Semiconductors
2000
1800
1600
1400
1200
1000
800
0
.
0
5
K
/
W
0
.
0
6
K
/
W
W
120°
0
.
1
(Rect)
K
/
0
.
1
2
K
/
W
0
.
1
6
K
/
W
0
.
.
2
0
K
/
600
W
3 x VSK.250.. Series
Three Phase Bridge
Connected
0
2
5
K
/
400
W
TJ = 130°C
200
0
0
100 200 300 400 500 600
Total Output Current (A)
7
00
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 18 - On-State Power Loss Characteristics
1800
10000
1000
100
VSK.170.. Series
ITM = 800 A
500 A
TJ = 130 °C
1600
1400
1200
1000
800
Per Junction
Tj = 25°C
Tj = 130°C
300 A
200 A
100 A
50 A
600
VSK.170 Series
Per Junction
400
200
0
10 20 30 40 50 60 70 80 90 100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous Forward Voltage (V)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 19 - On-State Voltage Drop Characteristics
Fig. 21 - Reverse Recovery Charge Characteristics
2400
10000
VSK.250.. Series
ITM = 800 A
2200
T = 130
°C
J
Per Junction
500 A
300 A
200 A
2000
1800
1600
1400
1200
1000
800
Tj = 25°C
Tj = 130°C
100 A
1000
50 A
600
VSK.250 Series
Per Junction
400
200
100
0
10 20 30 40 50 60 70 80 90 100
0.5
1
1.5
2 2.5 3 3.5 4 4.5 5 5.5 6
Instantaneous Forward Voltage (V)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 20 - On-State Voltage Drop Characteristics
Fig. 22 - Reverse Recovery Charge Characteristics
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Document Number: 94417
Revision: 02-Jul-10
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
Vishay Semiconductors
100
Rectangular gate pulse
(1) PGM = 10W, tp = 4ms
a) Recommended load line for
rated di/dt : 20 V, 10 ohms; tr < =1µs
b) Recommended load line for
<=30% rated di/dt : 10V, 20ohms
tr<=1 µs
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
10
1
(a)
(b)
(1) (2) (3) (4)
VGD
IGD
0.01
VSK.170/250 Series Frequency Limited by PG(AV)
0.1
0.001
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 23 - Gate Characteristics
1
0.1
Steady State Value:
R
R
= 0.17 K/W
= 0.125 K/W
VSK.170.. Series
thJC
thJC
(DC Operation)
VSK.250.. Series
0.01
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 24 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
T
250
-
20 PbF
1
2
3
4
5
-
-
-
-
-
Module type
1
2
3
4
5
Circuit configuration (see dimensions - link at the end of datasheet)
Current rating
Voltage code x 100 = VRRM (see Voltage Ratings table)
None = Standard production
PbF = Lead (Pb)-free
Note
To order the optional hardware go to www.vishay.com/doc?95172
•
Document Number: 94417
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
9
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
Vishay Semiconductors
CIRCUIT CONFIGURATION
VSKH...
VSKL...
VSKT...
~
~
~
~
~
~
+
+
+
+
-
+
-
+
-
-
-
-
Available from 400 V to 1600 V for VSK.170PbF Series,
available from 400 V to 2000 V for VSK.250PbF Series
K1G1 G2 K2
K1G1
VSKU...
VSKV...
+
+
-
-
-
+
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Available up to 1200 V,
contact factory for different requirement
K1G1 G2 K2
K1G1 G2 K2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95086
www.vishay.com
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94417
Revision: 02-Jul-10
Outline Dimensions
Vishay Semiconductors
MAGN-A-PAK
DIMENSIONS in millimeters (inches)
Ø 5.5
35 (1.38)
28 (1.12)
3 screws M8 x 1.25
80 (3.15)
9 (0.35)
6 (0.24)
115 (4.53)
HEX 13
92 (3.62)
Notes
• Dimensions are nominal
• Full engineering drawings are available on request
• UL identification number for gate and cathode wire: UL 1385
• UL identification number for package: UL 94 V-0
Document Number: 95086
Revision: 03-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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