VSKT41-08 [VISHAY]
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A; ADD -A- PAK第七代电源模块可控硅/二极管和晶闸管/晶闸管, 45 A / 60 A型号: | VSKT41-08 |
厂家: | VISHAY |
描述: | ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A |
文件: | 总11页 (文件大小:734K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VSK.41.., VSK.56.. Series
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
ADD-A-PAK
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRODUCT SUMMARY
• Up to 1600 V
IT(AV) or IF(AV)
45 A/60 A
• High surge capability
• Easy mounting on heatsink
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IT(AV) or IF(AV)
IO(RMS)
CHARACTERISTICS
VSK.41
45
VSK.56
60
UNITS
85 °C
As AC switch
50 Hz
100
135
A
850
1200
1256
7.20
6.57
72
ITSM,
IFSM
60 Hz
890
50 Hz
3.61
3.30
36.1
I2t
kA2s
60 Hz
I2√t
VRRM
TStg
TJ
kA2√s
Range
400 to 1600
- 40 to 125
V
°C
Document Number: 94630
Revision: 17-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
I
RRM, IDRM
VOLTAGE
CODE
REPETITIVE PEAK
REVERSE VOLTAGE
V
TYPE NUMBER
AT 125 °C
mA
04
06
08
10
12
14
16
400
600
500
700
400
600
800
900
800
VSK.41
VSK.56
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
180° conduction, half sine wave,
C = 85 °C
VSK.41 VSK.56 UNITS
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
45
60
T
IF(AV)
Maximum continuous RMS on-state current,
as AC switch
or
IO(RMS)
100
135
I(RMS)
I(RMS)
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
850
890
715
750
3.61
3.30
2.56
2.33
1200
1256
1000
1056
7.20
6.57
5.10
4.56
No voltage
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
ITSM
or
IFSM
Maximum peak, one-cycle non-repetitive
on-state or forward current
100 % VRRM
reapplied
No voltage
reapplied
Initial TJ =
TJ maximum
Maximum I2t for fusing
I2t
kA2s
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
Maximum I2√t for fusing
I2√t (1)
36.1
72
kA2√s
Low level (3)
1.08
1.12
4.7
0.91
1.02
4.27
3.77
(2)
Maximum value or threshold voltage
VT(TO)
TJ = TJ maximum
V
High level (4)
Low level (3)
Maximum value of on-state
slope resistance
(2)
rt
TJ = TJ maximum
mΩ
High level (4)
4.5
VTM
VFM
ITM = π x IT(AV)
TJ = 25 °C
Maximum peak on-state or forward voltage
1.81
1.7
V
IFM = π x IF(AV)
Maximum non-repetitive rate of rise of
turned on current
TJ = 25 °C, from 0.67 VDRM
,
dI/dt
150
200
A/μs
I
TM = π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum holding current
Maximum latching current
IH
IL
mA
TJ = 25 °C, anode supply = 6 V, resistive load
400
400
Notes
(1)
(2)
(3)
(4)
I2t for time tx = I2√t x √tx
Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
16.7 % x π x IAV < I < π x IAV
I > π x IAV
2
)
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For technical questions within your region, please contact one of the following:
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Document Number: 94630
Revision: 17-May-10
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VSK.41 VSK.56 UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
10
W
PG(AV)
IGM
2.5
2.5
10
A
- VGM
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
4.0
2.5
1.7
270
150
80
V
Anode supply = 6 V
resistive load
Maximum gate voltage required to trigger
Maximum gate current required to trigger
VGT
Anode supply = 6 V
resistive load
IGT
mA
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
VGD
IGD
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
0.25
6
V
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41 VSK.56 UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
15
mA
3000 (1 min)
3600 (1 s)
Maximum RMS insulation voltage
VINS
50 Hz
V
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 125 °C, linear to 0.67 VDRM
1000
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41 VSK.56 UNITS
Junction operating and storage
temperature range
TJ, TStg
- 40 to 125
0.44 0.35
°C
Maximum internal thermal resistance,
junction to case per leg
RthJC
RthCS
DC operation
°C/W
Typical thermal resistance,
case to heatsink per module
Mounting surface flat, smooth and greased
0.1
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
to heatsink
busbar
4
3
Mounting torque 10 %
Nm
75
g
Approximate weight
Case style
2.7
oz.
JEDEC
TO-240AA compatible
ΔR CONDUCTION PER JUNCTION
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
DEVICES
UNITS
180°
0.110
0.088
120°
0.131
0.104
90°
0.17
60°
0.23
30°
180°
0.085
0.07
120°
0.138
0.111
90°
60°
30°
VSK.41..
VSK.56..
0.342
0.273
0.177
0.143
0.235
0.189
0.345
0.275
°C/W
0.134
0.184
Note
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
•
Document Number: 94630
Revision: 17-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
Vishay Semiconductors
130
120
180°
120°
VSK.41 Series
RthJC (DC) = 0.44°C/W
100
80
60
40
20
0
90°
60°
30°
120
DC
110
RMS limit
100
180°
120°
90°
60°
30°
90
VSK.41 Series
Per leg, Tj = 125°C
80
0
10 20 30 40 50 60 70 80
Average on-state current (A)
0
10
20
30
40
50
Average on-state current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
800
130
120
110
100
90
VSK.41 Series
RthJC (DC) = 0.44 °C/W
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
700
600
500
400
300
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
DC
180°
120°
90°
60°
30°
80
Per leg
70
1
10
100
0
10 20 30 40 50 60 70 80
Average on-state current (A)
Number of equal amplitude half cycle current pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
80
70
60
50
40
30
20
10
0
900
180°
120°
90°
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintaned.
Initial Tj = 125°C
800
700
600
500
400
300
60°
30°
No Voltage Reapplied
Rated Vrrm reapplied
RMS limit
VSK.41 Series
Per leg, Tj = 125°C
Per leg
0.01
0.1
1
0
5
10 15 20 25 30 35 40 45 50
Average on-state current (A)
Pulse train duration (s)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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Document Number: 94630
Revision: 17-May-10
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
Vishay Semiconductors
160
RthSA = 0.1 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
2 °C/W
140
120
100
80
180°
120°
90°
60°
30°
3 °C/W
5 °C/W
60
40
VSK.41 Series
Per module
Tj = 125°C
20
0
0
20
40
60
80
1000 20 40 60 80 100 120 140
Maximum allowable ambient temperature (°C)
Total RMS output current (A)
Fig. 7 - On-State Power Loss Characteristics
350
300
250
200
150
100
50
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
180°
(sine)
180°
(rect)
∼
2 x VSK.41 Series
single phase bridge connected
Tj = 125°C
0
0
100
20 40 60 80 100 120 140
0
20
40
60
80
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 8 - On-State Power Loss Characteristics
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
120°
(rect)
1 °C/W
3 x VSK.41 Series
three phase bridge connected
Tj = 125°C
0
20 40 60 80 100 120
Total output current (A)
10
40 20 40 60 80 100 120 140
Maximum allowable ambient temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94630
Revision: 17-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
Vishay Semiconductors
130
140
VSK.56 Series
RthJC (DC) = 0.35°C/W
180°
120°
120
90°
60°
120
100
30°
DC
110
80
RMS limit
60
100
180°
120°
40
90°
60°
30°
90
VSK.56 Series
Per leg, Tj = 125°C
20
0
80
0
20
Average on-state current (A)
Fig. 13 - On-State Power Loss Characteristics
40
60
80
100
0
10 20 30 40 50 60 70
Average on-state current (A)
Fig. 10 - Current Ratings Characteristics
1100
130
120
110
100
90
VSK.56 Series
RthJC (DC) = 0.35 °C/W
At any rated load condition and with
rated Vrrm applied following surge
1000
900
800
700
600
500
400
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
DC
180°
120°
90°
60°
30°
80
Per leg
70
1
10
100
0
20
40
60
80
100
Number of equal amplitude half cycle current pulses (N)
Average on-state current (A)
Fig. 11 - Current Ratings Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
100
80
60
40
20
0
1300
180°
120°
90°
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintained.
Initial Tj = 125°C
1200
1100
1000
900
60°
30°
No Voltage Reapplied
Rated Vrrm reapplied
RMS limit
800
700
600
VSK.56 Series
Per leg
500
Per leg, Tj = 125°C
400
0.01
0.1
1
0
10 20 30 40 50 60 70
Average on-state current (A)
Pulse train duration (s)
Fig. 12 - On-State Power Loss Characteristics
Fig. 15 - Maximum Non-Repetitive Surge Current
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Document Number: 94630
Revision: 17-May-10
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
Vishay Semiconductors
250
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.4 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
2 °C/W
4 °C/W
180°
120°
90°
200
150
100
50
60°
30°
VSK.56 Series
Per module
Tj = 125°C
0
0
0
0
20 40 60 80 100 120 1040 20 40 60 80 100 120 140
Total RMS output current (A)
Maximum allowable ambient temperature (°C)
Fig. 16 - On-State Power Loss Characteristics
600
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
180°
(sine)
180°
(rect)
2 °C/W
∼
2 x VSK.56 Series
single phase bridge connected
Tj = 125°C
20 40 60 80 100 120 1400 20 40 60 80 100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 17 - On-State Power Loss Characteristics
700
600
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
120°
(rect)
3 x VSK.56 Series
three phase bridge connected
Tj = 125°C
20 40 60 80 100 120 140 160 180
0
20 40 60 80 100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 18 - On-State Power Loss Characteristics
Document Number: 94630
Revision: 17-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
7
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
Vishay Semiconductors
1000
1000
VSK. 41 Series
Per leg
VSK. 56 Series
Per leg
100
100
10
10
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 25°C
1
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Instantaneous on-state voltage (V)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Instantaneous on-state voltage (V)
Fig. 19 - On-State Voltage Drop Characteristics
Fig. 20 - On-State Voltage Drop Characteristics
1
Steady state value
RthJC = 0.44 °C/W
RthJC = 0.35 °C/W
(DC operation)
0.1
VSK.41 Series
VSK.56 Series
Per leg
0.01
0.001
0.01
0.1
1
10
Square wave pulse duration (s)
Fig. 21 - Thermal Impedance ZthJC Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
a)Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30%rated di/ dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(a)
(b)
(4)
(2) (1)
(3)
VGD
IGD
0.01
VSK.
IRK.41../ .56.. Series Fre q ue n c y Lim it e d b y PG( A V)
0.1
0.001
0.1 10 100 1000
1
Instantaneous gate current (A)
Fig. 22 - Gate Characteristics
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Document Number: 94630
Revision: 17-May-10
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VSK
T
56
/
16
1
2
3
4
1
2
3
4
-
-
-
-
Module type
Circuit configuration (see end of datasheet)
Current code
41 = 45 A
56 = 60 A
Voltage code (see Voltage Ratings table)
Note
To order the optional hardware go to www.vishay.com/doc?95172
•
CIRCUIT CONFIGURATION
VSKT
VSKH
VSKL
VSKN
(1)
~
(1)
(1)
(1)
~
~
-
1
1
1
1
+
+
+
+
2
2
2
2
3
(2)
(2)
(2)
(2)
3
3
3
4 5 7 6
4 5
7 6
4 5
-
-
-
+
(3)
(3)
G1 K1
(4) (5)
(3)
K2 G2
(7) (6)
(3)
G1 K1
(4) (5)
G1 K1 K2 G2
(4) (5) (7) (6)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95368
Document Number: 94630
Revision: 17-May-10
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DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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9
Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Thyristor
DIMENSIONS in millimeters (inches)
Fast-on tab ꢀ.8 x 0.8 (0.110 x 0.03ꢁ
Viti M5 x 0.8
Screws M5 x 0.8
15.5 0.5
(0.6 0.0ꢀ0ꢁ
18 (0.7ꢁ REF.
80 0.3 (3.15 0.01ꢀꢁ
15 0.5 (0.59 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
9ꢀ 0.75 (3.6 0.030ꢁ
Document Number: 95368
Revision: 11-Nov-08
For technical questions, contact: indmodules@vishay.com
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1
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including but not limited to the warranty expressed therein.
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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