VSKT56/16S90P [VISHAY]
Silicon Controlled Rectifier, 90.42A I(T)RMS, 60000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, TO-240AA, ROHS COMPLIANT, ADD-A-PAK-7;
| 型号： | VSKT56/16S90P |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 90.42A I(T)RMS, 60000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, TO-240AA, ROHS COMPLIANT, ADD-A-PAK-7 局域网 栅 栅极 |
| 文件： | 总12页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSK.41, .56..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 45/60 A
FEATURES
• High voltage
• Industrial standard package
• Thick copper baseplate
• UL E78996 approved
• 3500 VRMS isolating voltage
• Totally lead (Pb)-free
RoHS
COMPLIANT
• Designed and qualified for industrial level
ADD-A-PAKTM
BENEFITS
• Up to 1600 V
PRODUCT SUMMARY
IT(AV) or IF(AV)
45/60 A
• Fully compatible TO-240AA
• High surge capability
• Easy mounting on heatsink
• Al203 DBC insulator
• Heatsink grounded
MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAKTM modules combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu baseplate
allows an easier mounting on the majority of heatsink with
increased tolerance of surface roughness and improved
thermal spread. The Generation 5 of AAP modules is
manufactured without hard mold, eliminating in this way any
possible direct stress on the leads.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IT(AV) or IF(AV)
IO(RMS)
CHARACTERISTICS
VSK.41
45
VSK.56
60
UNITS
85 °C
As AC switch
50 Hz
100
135
A
850
1310
1370
8.50
7.82
85.0
ITSM,
IFSM
60 Hz
890
50 Hz
3.61
3.30
36.1
I2t
kA2s
60 Hz
I2√t
VRRM
TStg
TJ
kA2√s
Range
400 to 1600
- 40 to 125
V
°C
Document Number: 94419
Revision: 23-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
VSK.41, .56..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
45/60 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM
V
RSM, MAXIMUM
V
DRM, MAXIMUM REPETITIVE
IRRM,
IDRM
AT 125 °C
mA
VOLTAGE
CODE
REPETITIVE PEAK
REVERSE VOLTAGE
V
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
PEAK OFF-STATE VOLTAGE,
TYPE NUMBER
GATE OPEN CIRCUIT
V
04
06
08
10
12
14
16
400
600
500
700
400
600
800
900
800
VSK.41/.56
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41 VSK.56 UNITS
Maximum average on-state current
(thyristors)
IT(AV)
180° conduction, half sine wave,
45
60
T
C = 85 °C
Maximum average forward current
(diodes)
IF(AV)
Maximum continuous RMS
on-state current, as AC switch
or
IO(RMS)
100
135
I(RMS)
I(RMS)
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
850
890
1310
1370
1100
1150
1450
1520
8.56
7.82
6.05
5.53
10.05
9.60
85.6
0.85
0.88
3.53
3.41
No voltage
reapplied
Sinusoidal
half wave,
initial TJ = TJ maximum
Maximum peak, one-cycle
non-repetitive on-state
or forward current
ITSM
or
IFSM
715
100 % VRRM
reapplied
750
940
TJ = 25 °C
no voltage reapplied
985
3.61
3.30
2.56
2.33
4.42
4.03
36.1
0.88
0.91
5.90
5.74
No voltage
reapplied
Initial TJ = TJ maximum
100 % VRRM
reapplied
Maximum I2t for fusing
I2t
kA2s
TJ = 25 °C, no voltage reapplied
Maximum I2√t for fusing
I2√t (1)
t = 0.1 to 10 ms, no voltage reapplied
Low level (3)
High level (4)
kA2√s
(2)
Maximum value or threshold voltage
VT(TO)
TJ = TJ maximum
V
Low level (3)
Maximum value of on-state
slope resistance
(2)
rt
TJ = TJ maximum
High level (4)
mΩ
VTM
VFM
ITM = π x IT(AV)
TJ = 25 °C
Maximum peak on-state or
forward voltage
1.81
1.54
V
IFM = π x IF(AV)
Maximum non-repetitive rate of
rise of turned on current
TJ = 25 °C, from 0.67 VDRM
,
dI/dt
150
A/µs
I
TM = π x IT(AV), Ig = 500 mA, tr < 0.5 µs, tp > 6 µs
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum holding current
IH
IL
200
400
mA
Maximum latching current
TJ = 25 °C, anode supply = 6 V, resistive load
Notes
(1)
(3)
I2t for time tx = I2√t x √tx
16.7 % x π x IAV < I < π x IAV
I > π x IAV
(2)
2
(4)
Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
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2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94419
Revision: 23-Apr-08
VSK.41, .56..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
45/60 A
Vishay High Power Products
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41 VSK.56 UNITS
Maximum peak gate power
PGM
PG(AV)
IGM
10
W
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
2.5
2.5
10
A
- VGM
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
4.0
2.5
1.7
270
150
80
V
Anode supply = 6 V
resistive load
Maximum gate voltage required to trigger
Maximum gate current required to trigger
VGT
Anode supply = 6 V
resistive load
IGT
mA
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
VGD
IGD
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
0.25
6
V
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41 VSK.56 UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
15
mA
2500 (1 min)
3500 (1 s)
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted
TJ = 125 °C, linear to 0.67 VDRM
V
Maximum critical rate of rise of off-state voltage dV/dt (1)
Note
500
V/µs
(1)
Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT41/16AS90
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41 VSK.56 UNITS
Junction operating and storage
temperature range
TJ, TStg
- 40 to 125
0.23 0.20
°C
Maximum internal thermal resistance,
junction to case per module
RthJC
RthCS
DC operation
K/W
Typical thermal resistance, case to heatsink
Mounting surface flat, smooth and greased
0.1
5
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
to heatsink
busbar
Mounting torque 10 %
Nm
3
110
4
g
Approximate weight
Case style
oz.
JEDEC
TO-240AA
ΔR CONDUCTION PER JUNCTION
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
DEVICES
UNITS
180°
0.11
0.09
120°
0.13
0.11
90°
0.17
0.13
60°
0.23
0.18
30°
0.34
0.27
180°
0.09
0.07
120°
0.14
0.11
90°
0.18
0.14
60°
0.23
0.19
30°
0.34
0.28
VSK.41
VSK.56
°C/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94419
Revision: 23-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
VSK.41, .56..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
45/60 A
Vishay High Power Products
130
100
VSK.41.. Series
DC
R
(DC) = 0.46 K/W
thJC
180°
120
110
100
90
80
60
40
20
0
120°
90°
60°
30°
RMS Lim it
Conduction Angle
Conduction Period
30°
60°
90°
120°
VSK.41.. Series
Pe r Junc t io n
180°
40
T = 1 25° C
J
80
0
10
20
30
50
0
20
40
60
80
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
130
120
110
100
90
800
VSK.41.. Series
thJC
At Any Rated Load Condition And With
R
(DC) = 0.46 K/ W
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
700
600
500
400
300
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Conduction Period
30°
60°
90°
120°
40
180°
VSK.41.. Series
Per Junc tio n
DC
60
80
0
20
80
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
70
60
50
40
30
20
10
0
900
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
180°
120°
90°
60°
30°
Of Conduction May Not Be Maintained.
800
700
600
500
400
300
Initial T = 125°C
J
RM S Lim it
No Voltage Reapplied
Ra t e d V RRM Re a p p lie d
Conduction Angle
VSK.41.. Series
Per Junction
T = 125°C
VSK.41.. Series
Per Junction
J
0
10
20
30
40
50
0.01
0.1
1
Pulse Train Duration (s)
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94419
Revision: 23-Apr-08
VSK.41, .56..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
45/60 A
Vishay High Power Products
140
0
180°
.
3
R
K
120°
/
120
W
90°
1
K
/
=
0
W
60°
.
1
100
30°
K
/
W
-
1
.
D
80
5
K
e
/
W
l
t
a
R
2
K
60
40
20
0
/
W
Conduction Angle
VSK.41.. Series
Pe r Mod ule
T = 125°C
J
0
0
0
20
40
60
80
100 20 40 60
80 100 120 140
To t a l RM S Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
350
300
250
200
150
100
50
0
t
.
h
2
S
K
A
/
W
0
.
3
K
/
W
180°
(Sine)
180°
(Rect)
2 x VSK.41.. Series
1
.
5
K
/
W
Single Phase Bridge
Connected
T
= 1 25° C
J
0
20
40
60
80
100 20 40
60 80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
R
=
0
.
1
K/
W
-
D
e
l
t
a
120°
(Rect)
R
0
.
5
K
/
W
3 x VSK.41.. Series
Three Phase Bridge
Connected
T = 125 ° C
J
0
20 40
60 80 100 120 1040 20 40
60 80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94419
Revision: 23-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
VSK.41, .56..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
45/60 A
Vishay High Power Products
130
120
DC
VSK.56.. Series
R
(DC) = 0.40 K/ W
180°
thJC
120
110
100
90
100
80
60
40
20
0
120°
90°
60°
30°
Conduction Angle
RM S Lim it
Conduction Period
30°
VSK.56.. Series
Pe r Junc t io n
60°
90°
80
120°
180°
T = 1 25° C
J
70
0
10 20
Average On-state Current (A)
Fig. 10 - Current Ratings Characteristics
30 40
50 60 70
0
20
40
60
80
100
Average On-state Current (A)
Fig. 13 - On-State Power Loss Characteristics
130
1200
VSK.56.. Series
thJC
At Any Rated Load Condition And With
R
(DC) = 0.40 K/W
Rated V
Applied Following Surge.
RRM
1100
1000
900
800
700
600
500
120
110
100
90
Initial T = 125°C
J
@ 6 0 Hz 0 . 0 08 3 s
@ 5 0 Hz 0 . 0 10 0 s
Conduction Period
90°
80
60°
VSK.56.. Series
Per Junc tio n
120°
DC
80
30°
180°
70
0
20
Average On-state Current (A)
Fig. 11 - Current Ratings Characteristics
40
60
100
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 14 - Maximum Non-Repetitive Surge Current
90
1400
Maximum Non Repetitive Surge Current
180°
120°
90°
80
70
60
50
40
30
20
10
0
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
1200
Initial T = 125°C
J
No Voltage Reapplied
Ra t e d VRRM Reapplied
60°
30°
1000
RM S Li m it
800
600
Conduction Angle
VSK.56.. Series
Per Junction
T = 125°C
J
VSK.56.. Series
Pe r Jun c tio n
400
0
10
Average On-state Current (A)
Fig. 12 - On-State Power Loss Characteristics
20
30
40
50
60
0.01
0.1
1
Pulse Train Duration (s)
Fig. 15 - Maximum Non-Repetitive Surge Current
www.vishay.com
6
For technical questions, contact: ind-modules@vishay.com
Document Number: 94419
Revision: 23-Apr-08
VSK.41, .56..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
45/60 A
Vishay High Power Products
200
180°
120°
90°
180
160
140
120
100
80
60°
30°
0
.
7
K
/
W
Conduction Angle
60
VSK.56.. Series
40
Per Mod ule
20
T = 125°C
J
0
0
20 40 60
80 100 120
1
80 100 120 140
Maximum Allowable Ambient Temperature (°C)
Total RMSOutput Current (A)
Fig. 16 - On-State Power Loss Characteristics
450
400
350
300
250
200
150
100
50
0
.
2
K
/
W
180°
(Sine)
180°
(Rect)
0
.
7
K
/
W
2 x VSK.56.. Series
Single Phase Bridge
Connected
T
J
= 1 25° C
0
0
20
40
60 80 100 120 140 20 40
60
80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 17 - On-State Power Loss Characteristics
600
500
400
300
200
100
0
0
.
2
K
/
W
120°
0
(Rect)
.
3
K
/W
3 x VSK.56.. Series
0
.
7
K
/
W
Thre e Pha se Brid g e
Connected
T = 125°C
J
0
20 40 60 80 100 120 140 160 180 20 40 60
80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 18 - On-State Power Loss Characteristics
Document Number: 94419
Revision: 23-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
VSK.41, .56..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
45/60 A
Vishay High Power Products
500
1000
100
VSK.41.. Series
I
= 200 A
100 A
VSK.56.. Series
TM
450
400
350
300
250
200
150
100
T = 125 ° C
J
50 A
T = 25° C
J
20 A
10 A
T = 125° C
J
10
1
VSK.41.. Series
Per Junction
0
1
2
3
4
5
6
7
10 20 30 40 50 60 70 80 90 100
InstantaneousOn-state Voltage (V)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 19 - On-State Voltage Drop Characteristics
Fig. 21 - Recovery Charge Characteristics
1000
110
100
90
I
= 200 A
TM
100 A
50 A
20 A
100
80
70
10 A
T = 25° C
J
60
T = 125 ° C
J
10
1
50
VSK.41.. Series
VSK.56.. Series
T = 125 °C
J
VSK.56.. Series
Per Junc t io n
40
30
0.5
1
1.5
2
2.5
3
3.5
4
4.5
10 20 30 40 50 60 70 80 90 100
InstantaneousOn-state Voltage (V)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 20 - On-State Voltage Drop Characteristics
Fig. 22 - Recovery Current Characteristics
1
Steady State Value:
R
R
= 0.46 K/ W
= 0.40 K/ W
thJC
thJC
(DC Operation)
VSK.41.. Series
VSK.56.. Series
0.1
Pe r Junc t io n
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 23 - Thermal Impedance ZthJC Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94419
Revision: 23-Apr-08
VSK.41, .56..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
45/60 A
Vishay High Power Products
100
Rectangular gate pulse
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
a)Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30%rated di/dt: 20V, 65ohms
tr = 1µs, tp >= 6µs
10
1
(a)
(b)
(4)
(2) (1)
(3)
VGD
IGD
0.01
VSK.41../.56.. Series Fre q u e n c y Lim it e d b y PG( A V)
0.1 10 100 1000
0.1
0.001
1
Instantaneous Gate Current (A)
Fig. 24 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
T
56
/
16 S90
P
1
2
3
4
5
6
1
-
-
-
-
-
Module type
2
3
4
5
Circuit configuration (see end of datasheet)
Current code (1)
Voltage code (see Voltage Ratings table)
dV/dt code: S90 = dV/dt 1000 V/µs
No letter = dV/dt 500 V/µs
6
-
P = Lead (Pb)-free
(1) Available with no auxiliary cathode
(for details see dimensions - link at the end of datasheet)
To specify change: 41 to 42
56 to 57
e.g.: VSKT57/16P etc.
Note
• To order the optional hardware go to www.vishay.com/doc?95172
Document Number: 94419
Revision: 23-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
9
VSK.41, .56..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
45/60 A
Vishay High Power Products
CIRCUIT CONFIGURATION
VSKT
VSKH
VSKL
VSKN
(1)
(1)
(1)
(1)
~
~
~
-
1
1
1
1
+
(2)
+
(2)
+
(2)
+
(2)
2
3
2
3
2
3
2
3
4 5
4 5 7 6
4 5
7 6
-
-
-
+
(3)
(3)
(3)
G1 K1
(4) (5)
(3)
G1 K1
(4) (5)
K2 G2
(7) (6)
G1 K1 K2 G2
(4) (5) (7) (6)
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95085
Dimensions
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10
For technical questions, contact: ind-modules@vishay.com
Document Number: 94419
Revision: 23-Apr-08
Outline Dimensions
Vishay Semiconductors
ADD-A-PAK SCR
DIMENSIONS in millimeters (inches)
Fast-on tab 2.8 x 0.8 (0.110 x 0.037
With no auxiliary cathode
13.8 (0.547
Viti M5 x 0.8
Screws M5 x 0.8
15.6 0.5
(0.6 0.01ꢀ97
18 (0.97 REF.
80 0.3 (3.15 0.01187
Detail Z
15 0.5 (0.5ꢀ 0.01ꢀ97
20 0.5 (0.9ꢀ 0.01ꢀ97
20 0.5 (0.9ꢀ 0.01ꢀ97
ꢀ2 0.95 (3.6 0.02ꢀ537
Document Number: 95085
Revision: 29-Sep-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
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