VSKT71/10S90P [VISHAY]
Silicon Controlled Rectifier, 165A I(T)RMS, 75000mA I(T), 1000V V(DRM), 1000V V(RRM), 2 Element, TO-240AA, ROHS COMPLIANT, TO-240AA, ADD-A-PAK-7;
| 型号： | VSKT71/10S90P |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 165A I(T)RMS, 75000mA I(T), 1000V V(DRM), 1000V V(RRM), 2 Element, TO-240AA, ROHS COMPLIANT, TO-240AA, ADD-A-PAK-7 局域网 栅 栅极 |
| 文件： | 总12页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSK.71, .91..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 75/95 A
FEATURES
• High voltage
• Industrial standard package
• Thick copper baseplate
• UL E78996 approved
• 3500 VRMS isolating voltage
RoHS
COMPLIANT
• Totally lead (Pb)-free
• Designed and qualified for industrial level
ADD-A-PAKTM
BENEFITS
• Up to 1600 V
PRODUCT SUMMARY
• Fully compatible TO-240AA
• High surge capability
• Easy mounting on heatsink
• Al203 DBC insulator
IT(AV) or IF(AV)
75/95 A
MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAKTM modules combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu baseplate
allows an easier mounting on the majority of heatsink with
increased tolerance of surface roughness and improved
thermal spread. The Generation 5 of AAP modules is
manufactured without hard mold, eliminating in this way any
possible direct stress on the leads.
• Heatsink grounded
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.71
75
VSK.91
95
UNITS
I
T(AV) or IF(AV)
85 °C
IO(RMS)
As AC switch
50 Hz
165
210
A
1665
1740
13.86
12.56
138.6
1785
1870
15.91
14.52
159.1
ITSM,
IFSM
60 Hz
50 Hz
I2t
kA2s
60 Hz
I2√t
VRRM
TStg
TJ
kA2√s
Range
400 to 1600
- 40 to 125
V
°C
Document Number: 94421
Revision: 24-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
75/95 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM
V
RSM, MAXIMUM
V
DRM, MAXIMUM REPETITIVE
IRRM,
IDRM
AT 125 °C
mA
VOLTAGE
CODE
REPETITIVE PEAK
REVERSE VOLTAGE
V
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
PEAK OFF-STATE VOLTAGE,
TYPE NUMBER
GATE OPEN CIRCUIT
V
04
06
08
10
12
14
16
400
600
500
700
400
600
800
900
800
VSK.71/.91
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.71 VSK.91 UNITS
Maximum average on-state current
(thyristors)
IT(AV)
180° conduction, half sine wave,
C = 85 °C
75
95
T
Maximum average forward current
(diodes)
IF(AV)
Maximum continuous RMS on-state current,
as AC switch
or
IO(RMS)
165
210
I(RMS)
I(RMS)
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
1665
1740
1400
1470
1850
1940
13.86
12.56
9.80
1785
1870
1500
1570
2000
2100
15.91
14.52
11.25
10.27
20.00
18.30
No voltage
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
Maximum peak, one-cycle
non-repetitive on-state
or forward current
ITSM
or
IFSM
100 % VRRM
reapplied
TJ = 25 °C
no voltage reapplied
No voltage
reapplied
Initial TJ =
TJ maximum
100 % VRRM
reapplied
Maximum I2t for fusing
I2t
kA2s
8.96
17.11
15.60
TJ = 25 °C, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
TJ = TJ maximum
Maximum I2√t for fusing
I2√t (1)
138.6
159.1
kA2√s
Low level (3)
High level (4)
0.82
0.85
3.00
2.90
0.80
0.85
2.40
2.25
(2)
Maximum value or threshold voltage
VT(TO)
TJ = TJ maximum
V
Low level (3)
Maximum value of on-state
slope resistance
(2)
rt
TJ = TJ maximum
High level (4)
mΩ
VTM
VFM
ITM = π x IT(AV)
TJ = 25 °C
Maximum peak on-state or forward voltage
1.59
1.58
V
IFM = π x IF(AV)
Maximum non-repetitive rate of
rise of turned on current
TJ = 25 °C, from 0.67 VDRM
,
dI/dt
150
A/µs
I
TM = π x IT(AV), Ig = 500 mA, tr < 0.5 µs, tp > 6 µs
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum holding current
IH
IL
250
400
mA
Maximum latching current
TJ = 25 °C, anode supply = 6 V, resistive load
Notes
(1)
(3)
I2t for time tx = I2√t x √tx
16.7 % x π x IAV < I < π x IAV
I > π x IAV
(2)
2
(4)
Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
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2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94421
Revision: 24-Apr-08
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
75/95 A
Vishay High Power Products
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.71 VSK.91 UNITS
Maximum peak gate power
PGM
PG(AV)
IGM
12
W
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
3.0
3.0
10
A
- VGM
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
4.0
2.5
1.7
270
150
80
V
Anode supply = 6 V
resistive load
Maximum gate voltage required to trigger
Maximum gate current required to trigger
VGT
Anode supply = 6 V
resistive load
IGT
mA
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
VGD
IGD
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
0.25
6
V
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.71 VSK.91 UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
15
mA
2500 (1 min)
3500 (1 s)
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted
TJ = 125 °C, linear to 0.67 VDRM
V
Maximum critical rate of rise of off-state voltage dV/dt (1)
Note
500
V/µs
(1)
Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT91/16AS90
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.71 VSK.91 UNITS
Junction operating and storage
emperature range
T
J, TStg
- 40 to 125
0.165 0.135
°C
Maximum internal thermal resistance,
junction to case per module
RthJC
RthCS
DC operation
K/W
Typical thermal resistance, case to heatsink
Mounting surface flat, smooth and greased
0.1
5
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
to heatsink
busbar
Mounting torque 10 %
Nm
3
110
4
g
Approximate weight
Case style
oz.
JEDEC
TO-240AA
ΔR CONDUCTION PER JUNCTION
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
DEVICES
UNITS
180°
0.06
0.04
120°
0.07
0.05
90°
0.09
0.06
60°
0.12
0.08
30°
0.18
0.12
180°
0.04
0.03
120°
0.08
0.05
90°
0.10
0.06
60°
0.13
0.08
30°
0.18
0.12
VSK.71
VSK.91
°C/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94421
Revision: 24-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
75/95 A
Vishay High Power Products
130
140
DC
VSK.71.. Series
R thJC ( DC ) = 0.33 K/ W
120
180°
120
120°
90°
100
60°
110
30°
80
Conduction Angle
100
RMSLimit
60
Conduction Period
90
30°
40
20
0
60°
90°
VSK.71.. Series
Pe r Ju nc t io n
120°
80
70
180°
T = 1 2 5° C
J
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
0
20
40
60
80
100 120
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
130
1600
VSK.71.. Series
thJC
At Any Rated Load Condition And With
R
(DC) = 0.33 K/W
1500
1400
1300
1200
1100
1000
900
Rated V
Applied Following Surge.
RRM
120
110
100
90
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Conduction Period
30°
60°
90°
80
VSK.71.. Series
Per Junc tion
120°
800
DC
180°
80
70
700
0
20
40
60
100 120
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
120
100
80
60
40
20
0
1800
Maximum Non Repetitive Surge Current
180°
120°
90°
VersusPulse Train Duration. Control
1600 Of Conduction May Not Be Maintained.
Initial T = 125°C
60°
J
30°
No Voltage Reapplied
1400
Ra t e d V
Re a p p lie d
RRM
RMS Lim it
1200
1000
800
Conduction Angle
VSK.71.. Series
Per Junc t io n
T = 1 2 5° C
J
VSK.71.. Series
Pe r Junc t io n
600
0.01
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
0.1
Pulse Train Duration (s)
1
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
www.vishay.com
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94421
Revision: 24-Apr-08
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
75/95 A
Vishay High Power Products
250
R
180°
120°
=
200
150
100
50
90°
60°
30°
0
0
.
1
.
4
K
K
/
/
W
W
W
0
.
5
-
D
e
K
/
l
t
a
0
.
7
R
K
/
W
Conduction Angle
VSK.71.. Series
Pe r Mo d ule
T = 125 ° C
J
0
0
0
0
20 40 60 80 100 120 140 160 1
0
80 20 40
60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
To t a l RM S Output Current (A)
Fig. 7 - On-State Power Loss Characteristics
600
500
400
300
200
100
0
180°
(Sine)
180°
(Rect)
2 x VSK.71.. Series
Single Phase Bridge
Connected
1
K
/
W
T
= 1 25 ° C
J
20 40 60 80 100 120 140 160 180 20 40
60 80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
800
700
600
500
400
300
200
100
0
t
h
S
A
120°
(Rect)
0
.
2
K
/
W
0
.
5
K
/
3 x VSK.71.. Series
W
Three Phase Bridge
Connected
T = 1 25 ° C
J
40
80
120 160 200 240 20 40 60
80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94421
Revision: 24-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
75/95 A
Vishay High Power Products
130
180
DC
VSK.91.. Series
thJC
R
(DC) = 0.27 K/W
160
180°
120
110
100
90
120°
140
90°
60°
30°
120
Conduction Angle
100
80
60
40
20
0
RMS Lim it
Conduction Period
30°
40
60°
90°
VSK.91.. Series
Pe r Ju nc t io n
120°
80
80
180°
100
T = 1 25° C
J
70
0
20
60
0
20 40 60 80 100 120 140 160
Average On-state Current (A)
Average On-state Current (A)
Fig. 10 - Current Ratings Characteristics
Fig. 13 - On-State Power Loss Characteristics
130
1600
VSK.91.. Series
thJC
At Any Rated Load Condition And With
R
(DC) = 0.27 K/W
Rated V
Applied Following Surge.
1500
1400
1300
1200
1100
1000
900
RRM
120
110
100
90
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Conduction Period
30°
60°
90°
120°
80
VSK.91.. Series
Pe r Junc tio n
800
DC
180°
70
700
0
20 40 60 80 100 120 140 160
Average On-state Current (A)
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 11 - Current Ratings Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
140
1800
Maximum Non Repetitive Surge Current
180°
120°
90°
VersusPulse Train Duration. Control
120
100
80
60
40
20
0
Of Conduction May Not Be Maintained.
1600
1400
1200
1000
800
Initial T = 125°C
60°
J
No Voltage Reapplied
30°
Ra t e d V
Re a p p lie d
RRM
RMS Limit
Conduction Angle
VSK.91.. Series
Pe r Ju nc t io n
VSK.91.. Series
Per Junc tio n
T = 1 25 ° C
J
600
0.01
0.1
Pulse Train Duration (s)
Fig. 15 - Maximum Non-Repetitive Surge Current
1
0
20
Average On-state Current (A)
Fig. 12 - On-State Power Loss Characteristics
40
60
80
100
www.vishay.com
6
For technical questions, contact: ind-modules@vishay.com
Document Number: 94421
Revision: 24-Apr-08
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
75/95 A
Vishay High Power Products
350
R
t
h
300
250
200
150
100
50
180°
120°
90°
S
A
0
.
2
=
K
0
/
.
W
1
K
/
W
60°
-
D
30°
e
l
t
a
0
R
.
5
K
/
W
Conduction Angle
VSK.91.. Series
Per Mod ule
J
3
K
/
W
T = 1 25° C
0
0
40
80
120 160 200 24
0
0
20 40 60 80 100 120 140
Total RMSOutput Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 16 - On-State Power Loss Characteristics
600
500
400
300
200
100
0
R
t
180°
(Sine)
180°
h
S
A
=
0
.
1
(Rect)
K
/
W
-
D
e
l
t
a
R
0
.
5
K
/
W
2 x VSK.91.. Series
1
K
/
W
Single Phase Bridge
Connected
T
= 125°C
J
0
40
80
120
160
200 20
40 60 80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 17 - On-State Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
R
h
t
S
A
=
0
.
1
K
/
W
120°
-
D
(Rect)
e
0
l
t
.
2
a
K
R
/
W
3 x VSK.91.. Series
0
.
5
K
/
W
Three Phase Bridge
Connected
1
K
/
W
T J = 1 25 ° C
0
40 80 120 160 200 240 280 20 40
To t a l O u t p u t C u r re n t ( A )
60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
Fig. 18 - On-State Power Loss Characteristics
Document Number: 94421
Revision: 24-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
75/95 A
Vishay High Power Products
1000
100
700
I
= 200 A
100 A
VSK.71.. Series
VSK.91.. Series
J
TM
600
500
400
300
200
100
T = 1 2 5 ° C
50 A
T = 25 ° C
J
20 A
10 A
10
T = 125°C
J
VSK.71.. Series
Pe r Junc t io n
1
0.5
1
1.5
2
2.5
3
3.5
4
10 20 30 40 50 60 70 80 90 100
InstantaneousOn-state Voltage (V)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 19 - On-State Voltage Drop Characteristics
Fig. 21 - Recovery Charge Characteristics
1000
140
VSK.71.. Series
VSK.91.. Series
J
I
= 200 A
100 A
TM
120
100
80
T = 125 ° C
100
50 A
20 A
10 A
T = 25° C
J
T = 125°C
J
10
1
60
40
VSK.91.. Series
Per Junc tio n
20
0.5
1
1.5
2
2.5
3
3.5
10 20 30 40 50 60 70 80 90 100
Inst a n t a ne o us O n-st a t e Vo lt a g e ( V)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 20 - On-State Voltage Drop Characteristics
Fig. 22 - Recovery Current Characteristics
1
St e a d y State Value:
R
= 0.33 K/W
= 0.27 K/W
thJC
R
thJC
(DC Operation)
VSK.71.. Series
VSK.91.. Series
0.1
Per Ju nc t io n
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 23 - Thermal Impedance ZthJC Characteristics
www.vishay.com
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94421
Revision: 24-Apr-08
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
75/95 A
Vishay High Power Products
100
Rectangular gate pulse
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
a)Recommended load line for
rated di/dt: 20 V, 20ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30%rated di/dt: 15 V, 40 ohms
tr =1 µs, tp >= 6 µs
10
1
(a)
(b)
(4) (3) (2)
(1)
VGD
IGD
VSK.71../.91.. Series
0.1
Frequency Limited by PG(AV)
10 100 1000
0.1
0.001
0.01
1
Instantaneous Gate Current (A)
Fig. 24 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
T
91
/
16 S90
P
1
2
3
4
5
6
1
-
-
-
-
-
Module type
2
3
4
5
Circuit configuration (see end of datasheet)
Current code (1)
Voltage code (see Voltage Ratings Table)
dV/dt code: S90 = dV/dt 1000 V/µs
No letter = dV/dt 500 V/µs
6
-
P = Lead (Pb)-free
(1) Available with no auxiliary cathode
(for details see dimensions - link at the end of datasheet)
To specify change: 71 to 72
91 to 92
e.g.: VSKT92/16P etc.
Note
• To order the optional hardware go to www.vishay.com/doc?95172
Document Number: 94421
Revision: 24-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
9
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
75/95 A
Vishay High Power Products
CIRCUIT CONFIGURATION
VSKT
VSKH
VSKL
VSKN
(1)
(1)
(1)
(1)
~
~
~
-
1
1
1
1
+
(2)
+
(2)
+
(2)
+
(2)
2
3
2
3
2
3
2
3
4 5
4 5 7 6
4 5
7 6
-
-
-
+
(3)
(3)
(3)
G1 K1
(4) (5)
(3)
G1 K1
(4) (5)
K2 G2
(7) (6)
G1 K1 K2 G2
(4) (5) (7) (6)
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95085
Dimensions
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10
For technical questions, contact: ind-modules@vishay.com
Document Number: 94421
Revision: 24-Apr-08
Outline Dimensions
Vishay Semiconductors
ADD-A-PAK SCR
DIMENSIONS in millimeters (inches)
Fast-on tab 2.8 x 0.8 (0.110 x 0.037
With no auxiliary cathode
13.8 (0.547
Viti M5 x 0.8
Screws M5 x 0.8
15.6 0.5
(0.6 0.01ꢀ97
18 (0.97 REF.
80 0.3 (3.15 0.01187
Detail Z
15 0.5 (0.5ꢀ 0.01ꢀ97
20 0.5 (0.9ꢀ 0.01ꢀ97
20 0.5 (0.9ꢀ 0.01ꢀ97
ꢀ2 0.95 (3.6 0.02ꢀ537
Document Number: 95085
Revision: 29-Sep-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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Document Number: 91000
Revision: 11-Mar-11
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1
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