VSKU106/12S90P [VISHAY]

Silicon Controlled Rectifier, 106000mA I(T), 1200V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-7;
VSKU106/12S90P
型号: VSKU106/12S90P
厂家: VISHAY    VISHAY
描述:

Silicon Controlled Rectifier, 106000mA I(T), 1200V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-7

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VSKU/V105..PbF Series  
Vishay High Power Products  
Thyristor/Thyristor, 105 A  
(ADD-A-PAKTM Generation 5 Power Modules)  
FEATURES  
• High voltage  
• Industrial standard package  
• Thick Al metal die and double stick bonding  
• Thick copper baseplate  
• UL E78996 approved  
RoHS  
COMPLIANT  
• 3500 VRMS isolating voltage  
ADD-A-PAKTM  
• Totally lead (Pb)-free  
• Designed and qualified for industrial level  
PRODUCT SUMMARY  
IT(AV)  
105 A  
BENEFITS  
• Up to 1600 V  
MECHANICAL DESCRIPTION  
The Generation 5 of ADD-A-PAKTM module combines the  
excellent thermal performance obtained by the usage of  
direct bonded copper substrate with superior mechanical  
ruggedness, thanks to the insertion of a solid copper  
baseplate at the bottom side of the device. The Cu baseplate  
allows an easier mounting on the majority of heatsink with  
increased tolerance of surface roughness and improved  
thermal spread. The Generation 5 of AAP modules is  
manufactured without hard mold, eliminating in this way any  
possible direct stress on the leads.  
• Full compatible TO-240AA  
• High surge capability  
• Easy mounting on heatsink  
• Al203 DBC insulator  
• Heatsink grounded  
ELECTRICAL DESCRIPTION  
These modules are intended for general purpose high  
voltage applications such as high voltage regulated power  
supplies, lighting circuits, temperature and motor speed  
control circuits, UPS and battery charger.  
The electrical terminals are secured against axial pull-out:  
they are fixed to the module housing via a click-stop feature  
already tested and proved as reliable on other Vishay HPP  
modules.  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
105  
UNITS  
IT(AV)  
85 °C  
IT(RMS)  
165  
A
50 Hz  
60 Hz  
50 Hz  
60 Hz  
1785  
ITSM  
1870  
15.91  
I2t  
kA2s  
14.52  
I2t  
VRRM  
TStg  
TJ  
159.1  
kA2√  
V
s
Range  
400 to 1600  
- 40 to 125  
- 40 to 130  
°C  
Document Number: 94423  
Revision: 24-Apr-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1
VSKU/V105..PbF Series  
Thyristor/Thyristor, 105 A  
(ADD-A-PAKTM Generation 5 Power Modules)  
Vishay High Power Products  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
V
RRM, MAXIMUM  
VRSM, MAXIMUM  
NON-REPETITIVE PEAK  
REVERSE VOLTAGE  
V
VDRM, MAXIMUM REPETITIVE  
PEAK OFF-STATE VOLTAGE,  
GATE OPEN CIRCUIT  
V
IRRM,  
VOLTAGE  
CODE  
REPETITIVE PEAK  
REVERSE VOLTAGE  
V
IDRM  
AT 130 °C  
mA  
TYPE NUMBER  
04  
08  
12  
16  
400  
800  
500  
900  
400  
800  
VSKU/V105  
20  
1200  
1600  
1300  
1700  
1200  
1600  
ON-STATE CONDUCTION  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
A
180° conduction, half sine wave,  
Maximum average on-state current  
IT(AV)  
105  
T
C = 85 °C  
DC  
165  
77  
Maximum continuous RMS on-state current IT(RMS)  
TC  
°C  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
1785  
No voltage  
reapplied  
Sinusoidal  
1870  
1500  
1570  
2000  
2100  
15.91  
14.52  
11.25  
10.27  
20.00  
18.30  
half wave,  
initial TJ = TJ  
maximum  
Maximum peak, one-cycle  
ITSM  
100 % VRRM  
reapplied  
A
non-repetitive on-state current  
TJ = 25 °C  
no voltage reapplied  
No voltage  
reapplied  
Initial TJ = TJ  
maximum  
100 % VRRM  
reapplied  
Maximum I2t for fusing  
I2t  
kA2s  
TJ = 25 °C  
no voltage reapplied  
t = 0.1 to 10 ms, no voltage reapplied  
TJ = TJ maximum  
Maximum I2t for fusing  
I2t (1)  
159.1  
kA2s  
Low level (3)  
0.80  
0.85  
2.37  
2.25  
(2)  
Maximum value or threshold voltage  
VT(TO)  
TJ = TJ maximum  
V
High level (4)  
Low level (3)  
Maximum value of on-state  
slope resistance  
(2)  
rt  
TJ = TJ maximum  
mΩ  
High level (4)  
VTM  
VFM  
ITM = π x IT(AV)  
TJ = 25 °C  
Maximum peak on-state or forward voltage  
1.64  
150  
V
IFM = π x IF(AV)  
Maximum non-repetitive rate of  
rise of turned on current  
TJ = 25 °C, from 0.67 VDRM  
,
dI/dt  
A/µs  
I
TM = π x IT(AV), Ig = 500 mA, tr < 0.5 µs, tp > 6 µs  
TJ = 25 °C, anode supply = 6 V,  
resistive load, gate open circuit  
Maximum holding current  
IH  
IL  
200  
400  
mA  
Maximum latching current  
TJ = 25 °C, anode supply = 6 V, resistive load  
Notes  
(1)  
(2)  
(3)  
(4)  
I2t for time tx = I2t x tx  
Average power = VT(TO) x IT(AV) + rt x (IT(RMS)  
16.7 % x π x IAV < I < π x IAV  
I > π x IAV  
2
)
www.vishay.com  
2
For technical questions, contact: ind-modules@vishay.com  
Document Number: 94423  
Revision: 24-Apr-08  
VSKU/V105..PbF Series  
Thyristor/Thyristor, 105 A  
(ADD-A-PAKTM Generation 5 Power Modules)  
Vishay High Power Products  
TRIGGERING  
PARAMETER  
SYMBOL  
PGM  
TEST CONDITIONS  
VALUES  
12  
UNITS  
Maximum peak gate power  
Maximum average gate power  
Maximum peak gate current  
Maximum peak negative gate voltage  
W
A
PG(AV)  
IGM  
3
3
- VGM  
10  
TJ = - 40 °C  
TJ = 25 °C  
TJ = 125 °C  
TJ = - 40 °C  
TJ = 25 °C  
TJ = 125 °C  
4.0  
2.5  
1.7  
270  
150  
80  
V
Anode supply = 6 V  
resistive load  
Maximum gate voltage required to trigger  
Maximum gate current required to trigger  
VGT  
Anode supply = 6 V  
resistive load  
IGT  
mA  
Maximum gate voltage that will not trigger  
Maximum gate current that will not trigger  
VGD  
IGD  
0.25  
6
V
TJ = 125 °C, rated VDRM applied  
mA  
BLOCKING  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum peak reverse and off-state leakage  
current at VRRM, VDRM  
IRRM  
IDRM  
,
TJ = 130 °C, gate open circuit  
20  
mA  
2500 (1 min)  
3500 (1 s)  
RMS insulation voltage  
VINS  
50 Hz, circuit to base, all terminals shorted  
V
Maximum critical rate of rise of off-state voltage dV/dt (1)  
Note  
TJ = 130 °C, linear to 0.67 VDRM, gate open circuit  
500  
V/µs  
(1)  
Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. VSKU105/16AS90  
THERMAL AND MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
- 40 to 130  
- 40 to 125  
UNITS  
Junction operating temperature range  
Storage temperature range  
TJ  
°C  
TStg  
Maximum internal thermal resistance,  
junction to case per module  
RthJC  
RthCS  
DC operation  
0.135  
0.1  
5
K/W  
Nm  
Typical thermal resistance, case to heatsink  
Mounting surface flat, smooth and greased  
A mounting compound is recommended and  
the torque should be rechecked after a period of  
3 hours to allow for the spread of the compound.  
to heatsink  
busbar  
Mounting torque 10 %  
3
110  
4
g
Approximate weight  
Case style  
oz.  
JEDEC  
TO-240AA  
ΔR CONDUCTION PER JUNCTION  
SINE HALF WAVE CONDUCTION  
RECTANGULAR WAVE CONDUCTION  
DEVICES  
UNITS  
180°  
120°  
90°  
60°  
30°  
180°  
120°  
90°  
60°  
30°  
VSKU/V105  
0.04  
0.05  
0.06  
0.08  
0.12  
0.03  
0.05  
0.06  
0.08  
0.12  
°C/W  
Note  
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC  
Document Number: 94423  
Revision: 24-Apr-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
3
VSKU/V105..PbF Series  
Thyristor/Thyristor, 105 A  
(ADD-A-PAKTM Generation 5 Power Modules)  
Vishay High Power Products  
130  
200  
DC  
VSK.105.. Series  
thJC  
R
(DC) = 0.27 K/W  
180  
160  
140  
120  
100  
80  
180°  
120°  
90°  
120  
110  
100  
90  
60°  
30°  
Conduction Angle  
RM S Lim i t  
Conduction Period  
30°  
40  
60  
60°  
60  
VSK.105.. Series  
Per Junc t ion  
90°  
40  
80  
120°  
180°  
T = 130° C  
20  
J
70  
0
0
20 40 60 80 100 120 140 160 180  
Average On-state Current (A)  
0
20  
80  
100 120  
Average On-state Current (A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 4 - On-State Power Loss Characteristics  
130  
120  
110  
100  
90  
1600  
VSK.105.. Series  
At Any Rated Load Condition And With  
Rated V  
Applied Following Surge.  
R
(DC) = 0.27 K/W  
RRM  
1500  
1400  
1300  
1200  
1100  
1000  
900  
thJC  
Initial T = 130°C  
J
@60 Hz 0.0083 s  
@50 Hz 0.0100 s  
Conduction Period  
30°  
60°  
90°  
80  
VSK.105.. Series  
Per Junction  
120°  
800  
DC  
180°  
70  
700  
0
20 40 60 80 100 120 140 160 180  
Average On-state Current (A)  
1
10  
100  
Number Of Equal Amplitude Half Cycle Current Pulses(N)  
Fig. 2 - Current Ratings Characteristics  
Fig. 5 - Maximum Non-Repetitive Surge Current  
160  
140  
120  
100  
80  
1800  
Maximum Non Repetitive Surge Current  
180°  
120°  
90°  
VersusPulse Train Duration. Control  
Of Conduction May Not Be Maintained.  
1600  
1400  
1200  
1000  
800  
Initial T = 130°C  
60°  
J
30°  
No Voltage Reapplied  
Ra t e d V  
Re a p p lie d  
RRM  
RM S Li m it  
60  
Conduction Angle  
40  
VSK.105.. Series  
Per Junc t ion  
VSK.105.. Series  
Per Junction  
20  
T = 130°C  
J
0
600  
0.01  
0
20  
40  
60  
80  
100 120  
0.1  
Pulse Train Duration (s)  
1
Average On-state Current (A)  
Fig. 3 - On-State Power Loss Characteristics  
Fig. 6 - Maximum Non-Repetitive Surge Current  
www.vishay.com  
4
For technical questions, contact: ind-modules@vishay.com  
Document Number: 94423  
Revision: 24-Apr-08  
VSKU/V105..PbF Series  
Thyristor/Thyristor, 105 A  
(ADD-A-PAKTM Generation 5 Power Modules)  
Vishay High Power Products  
600  
R
180°  
=
0
500  
400  
300  
200  
100  
0
(Sine)  
180°  
.
1
K
/
W
-
(Rect)  
D
e
l
t
a
R
0.  
3
K
/
W
2 x VSK.105.. Series  
Sin g le Ph a se Br id g e  
Connected  
T
= 130° C  
J
0
40  
80  
120  
160  
200 20  
40 60 80 100 120 140  
Total Output Current (A)  
Maximum Allowable Ambient Temperature (°C)  
Fig. 7 - On-State Power Loss Characteristics (Single Phase Bridge VSKU + VSKV)  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
60°  
(Rect)  
I
o
0
.
5
3 x VSK.105.. Series  
6-Pulse Midpoint  
K
/
W
Connection Bridge  
T
= 130°C  
J
0
50 100 150 200 250 300 350 400 450 20 40 60  
80 100 120 140  
Total Output Current (A) Maximum Allowable Ambient Temperature (°C)  
Fig. 8 - On-State Power Loss Characteristics  
1000  
100  
10  
T = 25° C  
J
T = 130°C  
J
VSK.105.. Series  
Pe r Jun c t io n  
1
0
0.5  
1
1.5  
2
2.5  
3
3.5  
InstantaneousOn-state Voltage (V)  
Fig. 9 - On-State Voltage Drop Characteristics  
Document Number: 94423  
Revision: 24-Apr-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
5
VSKU/V105..PbF Series  
Thyristor/Thyristor, 105 A  
(ADD-A-PAKTM Generation 5 Power Modules)  
Vishay High Power Products  
140  
700  
I
= 200 A  
100 A  
TM  
VSK.105.. Series  
T = 125 ° C  
I
= 200 A  
100 A  
VSK.105.. Series  
J
TM  
J
120  
100  
80  
T = 12 5 ° C  
600  
500  
400  
300  
200  
100  
50 A  
20 A  
10 A  
50 A  
20 A  
10 A  
60  
40  
20  
10 20 30 40 50 60 70 80 90 100  
10 20 30 40 50 60 70 80 90 100  
Rate Of Fall Of On-state Current - di/dt (A/µs)  
Rate Of Fall Of Forward Current - di/dt (A/µs)  
Fig. 10 - Current Ratings Characteristics  
Fig. 11 - Current Ratings Characteristics  
1
Steady State Value:  
R
= 0.27 K/W  
thJC  
(DC Operation)  
0.1  
VSK.105.. Series  
Per Junction  
0.01  
0.001  
0.01  
0.1  
1
10  
Square Wave Pulse Duration (s)  
Fig. 12 - Thermal Impedance ZthJC Characteristics  
100  
10  
1
Rectangular gate pulse  
(1) PGM = 200 W, tp = 300 µs  
a)Recommended load line for  
rated di/dt: 20 V, 20 ohms  
tr = 0.5 µs, tp >= 6 µs  
(2) PGM = 60 W, tp = 1 ms  
(3) PGM = 30 W, tp = 2 ms  
(4) PGM = 12 W, tp = 5 ms  
b)Recommended load line for  
<= 30%rated di/dt: 15 V, 40 ohms  
tr = 1µs, tp >= 6µs  
(a)  
(b)  
(3)  
(4)  
(2)  
(1)  
VGD  
IGD  
0.01  
VSK.105.. Series  
Frequency Limited by PG(AV)  
10 100 1000  
0.1  
0.001  
0.1  
1
InstantaneousGate Current (A)  
Fig. 13 - Gate Characteristics  
www.vishay.com  
6
For technical questions, contact: ind-modules@vishay.com  
Document Number: 94423  
Revision: 24-Apr-08  
VSKU/V105..PbF Series  
Thyristor/Thyristor, 105 A  
(ADD-A-PAKTM Generation 5 Power Modules)  
Vishay High Power Products  
ORDERING INFORMATION TABLE  
Device code  
VSK  
U
105  
/
16 S90  
P
1
2
3
4
5
6
1
-
-
-
-
-
Module type  
2
3
4
5
Circuit configuration (see end of datasheet)  
Current code (1)  
Voltage code (see Voltage Ratings table)  
dV/dt code: S90 = dV/dt 1000 V/µs  
No letter = dV/dt 500 V/µs  
6
-
P = Lead (Pb)-free  
(1) Available with no auxiliary cathode  
(for details see dimensions - link at the end of datasheet)  
To specify change: 105 to 106  
e.g.: VSKU106/16P etc.  
Note  
• To order the optional hardware go to www.vishay.com/doc?95172  
CIRCUIT CONFIGURATION  
VSKU  
VSKV  
(1)  
+
(1)  
-
-
(2)  
+
(2)  
-
+
(3)  
(3)  
G1 K1 K2 G2  
(4) (5) (7) (6)  
G1 K1 K2 G2  
(4) (5) (7) (6)  
LINKS TO RELATED DOCUMENTS  
Dimensions  
http://www.vishay.com/doc?95087  
Document Number: 94423  
Revision: 24-Apr-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
7
Outline Dimensions  
Vishay Semiconductors  
ADD-A-PAK Thyristor  
DIMENSIONS in millimeters (inches)  
Faston tab 2.8 x 0.8 (0.110 x 0.037  
With no auxiliary cathode  
13.8 (0.547  
Viti M5 x 0.8  
Screws M5 x 0.8  
15.6 0.5  
(0.6 0.01ꢀ97  
18 (0.97 REF.  
80 0.3 (3.15 0.01187  
Detail Z  
15 0.5 (0.5ꢀ 0.01ꢀ97  
20 0.5 (0.9ꢀ 0.01ꢀ97  
20 0.5 (0.9ꢀ 0.01ꢀ97  
ꢀ2 0.95 (3.6 0.02ꢀ537  
Document Number: 95087  
Revision: 03-Aug-07  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
1
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1

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