VSLY3850-ASZ [VISHAY]
High Speed Infrared Emitting Diode;
| 型号： | VSLY3850-ASZ |
| 厂家： | 
VISHAY |
| 描述： | High Speed Infrared Emitting Diode |
| 文件： | 总5页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSLY3850
Vishay Semiconductors
www.vishay.com
High Speed Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
FEATURES
• Package type: leaded
• Package form: T-1, clear epoxy
• Dimensions: Ø 3 mm
• Peak wavelength: λp = 850 nm
• High speed
• High radiant power
• High radiant intensity
94 8636
• Angle of half intensity: ϕ = 18°
• Suitable for high pulse current operation
• Good spectral matching with CMOS cameras
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
As part of the SurfLightTM portfolio, the VSLY3850 is an
infrared, 850 nm emitting diode based on GaAlAs surface
emitter chip technology with extreme high radiant intensity,
high optical power and high speed, molded in a clear,
untinted T1 plastic package.
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
• 3D TV application
• Light curtains
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
VSLY3850
70
18
850
10
Note
•
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSLY3850
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
MOQ: 10 000 pcs, 2000 pcs/box
T-1
T-1
VSLY3850-ASZ
Ammopack
Note
MOQ: minimum order quantity
•
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
V
Reverse voltage
VR
5
100
Forward current
IF
mA
mA
A
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 μs
tp = 100 μs
IFM
200
IFSM
PV
1
190
mW
°C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tj
100
Tamb
Tstg
Tsd
-40 to +85
-40 to +100
260
°C
°C
t ≤ 5 s, 2 mm from case
°C
Thermal resistance junction / ambient J-STD-051, leads 7 mm, soldered on PCB
RthJA
300
K/W
Rev. 1.4, 14-Jan-16
Document Number: 82395
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSLY3850
Vishay Semiconductors
www.vishay.com
200
180
160
140
120
100
80
120
100
80
60
40
20
0
RthJA = 300 K/W
RthJA = 300 K/W
60
40
20
0
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
22322
22323
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 1 mA
SYMBOL
MIN.
TYP.
1.65
2.9
MAX.
UNIT
V
VF
-
-
-
-
1.9
Forward voltage
VF
-
-
-
V
TKVF
TKVF
IR
-1.45
-1.25
mV/K
mV/K
μA
Temperature coefficient of VF
IF = 10 mA
Reverse current
Not designed for reverse operation
V
R = 0 V, f = 1 MHz,
Junction capacitance
CJ
-
125
-
pF
E = 0 mW/cm2
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
Ie
Ie
35
-
70
600
55
105
mW/sr
mW/sr
mW
Radiant intensity
Radiant power
-
-
IF = 100 mA, tp = 20 ms
φe
-
Temperature coefficient of radiant
power
IF = 1 mA
TKϕe
-
-0.35
-
%/K
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of lp
Rise time
ϕ
λp
-
18
850
30
-
deg
nm
nm
nm
ns
IF = 30 mA
IF = 30 mA
840
870
Δλ
TKλp
tr
-
-
-
-
-
-
-
-
IF = 30 mA
0.25
10
IF = 100 mA, 20 % to 80 %
IF = 100 mA, 20 % to 80 %
Fall time
tf
10
ns
Rev. 1.4, 14-Jan-16
Document Number: 82395
2
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSLY3850
Vishay Semiconductors
www.vishay.com
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
1
1000
tp = 100 µs
100
10
1
0.1
0.01
0.001
0.1
0
0.5
1
1.5
2
2.5
3
3.5
1
10
I - Forward Current (mA)
F
100
1000
22097
VF - Forward Voltage (V)
16971
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Radiant Power vs. Forward Current
1
Tamb < 50 °C
tp/T = 0.01
0.02
0.05
1000
IF = 30 mA
0.75
0.1
0.5
0.25
0
0.2
0.5
100
0.01
0.1
1
10
100
650
750
850
950
tp - Pulse Duration (ms)
16031
λ - Wavelength (nm)
21776-1
Fig. 4 - Pulse Forward Current vs. Pulse Duration
Fig. 7 - Relative Radiant Power vs. Wavelength
0°
10°
20°
1000
100
10
30°
40°
1.0
0.9
50°
60°
tp = 100 µs
0.8
1
70°
80°
0.7
0.1
0.6
0.4
0
0.2
0.001
0.01
0.1
1
21355
21951
IF - Forward Current (A)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Rev. 1.4, 14-Jan-16
Document Number: 82395
3
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSLY3850
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters
C
A
R1.4 (sphere)
AREA NOT PLANE
Ø 2.9 0.1
+ 0.15
0.4 - 0.05
+ 0.2
0.5 - 0.1
2.54 nom.
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5264.01-4
Issue: 4; 28.07.14
Rev. 1.4, 14-Jan-16
Document Number: 82395
4
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
Document Number: 91000
1
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