VSMF3710-GS18 [VISHAY]

High Speed Infrared Emitting Diode, 890 nm RoHS Compliant, Released for Lead (Pb)-free Solder Process; 高速红外发光二极管, 890纳米符合RoHS ,发布的铅(Pb )无铅焊接工艺
VSMF3710-GS18
型号: VSMF3710-GS18
厂家: VISHAY    VISHAY
描述:

High Speed Infrared Emitting Diode, 890 nm RoHS Compliant, Released for Lead (Pb)-free Solder Process
高速红外发光二极管, 890纳米符合RoHS ,发布的铅(Pb )无铅焊接工艺

二极管
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VSMF3710  
Vishay Semiconductors  
High Speed Infrared Emitting Diode, 890 nm  
RoHS Compliant, Released for Lead (Pb)-free Solder Process  
Description  
VSMF3710 is a high speed infrared emitting diode in  
GaAlAs double hetero (DH) technology in a miniature  
PLCC-2 SMD package.  
DH technology combines high speed with high radiant  
power at wavelength of 890 nm.  
Features  
94 8553  
• High radiant power  
• High speed: t = 30 ns  
r
• High modulation band width: f = 12 MHz  
c
e3  
• Peak wavelength: λ = 890 nm  
Applications  
• High speed IR data transmission  
p
• High reliability  
• Low forward voltage  
• High power emitter for low space applications  
• Suitable for high pulse current application  
• Wide angle of half intensity  
• High performance transmissive or reflective  
sensors  
• Compatible with automatic placement equipment  
• EIA and ICE standard package  
• 8 mm tape and reel standard: GS08 or GS18  
• Lead (Pb)-free reflow soldering  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Order Instructions  
Part  
Ordering code  
VSMF3710-GS08  
VSMF3710-GS18  
Remarks  
VSMF3710  
MOQ: 7500 pcs, 1500 pcs per reel  
MOQ: 8000 pcs, 8000 pcs per reel  
VSMF3710  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Reverse voltage  
Forward current  
Test condition  
Symbol  
VR  
Value  
Unit  
V
5
100  
IF  
IFM  
IFSM  
PV  
mA  
mA  
A
tp/T = 0.5, tp = 100 µs  
tp = 100 µs  
Peak forward current  
Surge forward current  
Power dissipation  
200  
1
170  
mW  
°C  
Tj  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
100  
Tamb  
Tstg  
Tsd  
- 40 to + 85  
- 40 to + 100  
260  
°C  
°C  
acc. figure 8, J-STD-020B  
°C  
Thermal resistance  
junction / ambient  
RthJA  
400  
K/W  
Document Number 81241  
Rev. 1.5, 25-Jan-07  
www.vishay.com  
1
VSMF3710  
Vishay Semiconductors  
180  
120  
100  
80  
60  
40  
20  
0
160  
RthJA = 400 K/W  
140  
120  
100  
RthJA = 400 K/W  
80  
60  
40  
20  
0
0
10 20 30 40 50 60 70 80 90 100  
Tamb- Ambient Temperature (°C)  
0
10 20 30 40 50 60 70 80 90 100  
Tamb- Ambient Temperature (°C)  
20140  
20141  
Figure 1. Power Dissipation Limit vs. Ambient Temperature  
Figure 2. Forward Current Limit vs. Ambient Temperature  
Basic Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Forward voltage  
Test condition  
Symbol  
VF  
Min  
Typ.  
1.4  
Max  
1.6  
Unit  
V
IF = 100 mA, tp = 20 ms  
IF = 1 A, tp = 100 µs  
IF = 100 mA  
VF  
TKVF  
IR  
2.3  
V
Temp. coefficient of VF  
Reverse current  
- 2.1  
mV/K  
µA  
VR = 5 V  
10  
22  
VR = 0 V, f = 1 MHz, E = 0  
IF = 100 mA, tp = 20 ms  
IF = 1 A, tp = 100 µs  
IF = 100 mA, tp = 20 ms  
IF = 100 mA  
Cj  
Junction capacitance  
Radiant intensity  
125  
10  
pF  
Ie  
6
mW/sr  
mW/sr  
mW  
%/K  
deg  
nm  
Ie  
100  
40  
φe  
Radiant power  
Temp. coefficient of φe  
Angle of half intensity  
Peak wavelength  
TKφe  
- 0.35  
60  
ϕ
IF = 100 mA  
IF = 100 mA  
IF = 100 mA  
IF = 100 mA  
IF = 100 mA  
λp  
890  
40  
Spectral bandwidth  
Temp. coefficient of λp  
Δλ  
TKλp  
tr  
nm  
0.25  
30  
nm/K  
ns  
Rise time  
tf  
Fall time  
30  
ns  
Virtual source size  
0.44  
mm  
www.vishay.com  
2
Document Number 81241  
Rev. 1.5, 25-Jan-07  
VSMF3710  
Vishay Semiconductors  
Typical Characteristics  
Tamb = 25 °C, unless otherwise specified  
1.25  
1.0  
10000  
Tamb < 60 °C  
t p /T = 0.005  
0.01  
1000  
100  
0.02  
0.05  
0.75  
0.5  
0.25  
0
0.2  
0.5  
DC  
0.1  
10  
1
1000  
800  
900  
100  
0.01  
0.1  
1
10  
20082  
λ - Wavelength (nm)  
tp - Pulse Length (ms)  
95 9985  
Figure 3. Pulse Forward Current vs. Pulse Duration  
Figure 6. Relative Radiant Power vs. Wavelength  
0°  
10°  
20°  
1000  
100  
30°  
40°  
1.0  
0.9  
t
t
= 100 µs  
/ T = 0.001  
50°  
60°  
p
p
10  
1
0.8  
70°  
0.7  
80°  
0
1
2
3
4
0.6  
0.6 0.4 0.2  
0
0.2  
0.4  
94 8013  
18873_1  
V
- Forward Voltage (V)  
F
Figure 4. Forward Current vs. Forward Voltage  
Figure 7. Relative Radiant Intensity vs. Angular Displacement  
100  
10  
tp = 100 µs  
1
0.1  
1
10  
IF - Forward Pulse Current (mA)  
100  
1000  
18874  
Figure 5. Radiant Intensity vs. Forward Pulse Current  
Document Number 81241  
Rev. 1.5, 25-Jan-07  
www.vishay.com  
3
VSMF3710  
Vishay Semiconductors  
Package Dimensions  
Mounting Pad Layout  
1.2  
area covered with  
solder resist  
4
1.6 (1.9)  
20541_1  
www.vishay.com  
4
Document Number 81241  
Rev. 1.5, 25-Jan-07  
VSMF3710  
Vishay Semiconductors  
Solder Profile  
Tape and Reel  
PLCC-2 components are packed in antistatic blister  
tape (DIN IEC (CO) 564) for automatic component  
insertion. Cavities of blister tape are covered with  
adhesive tape.  
300  
max. 260 °C  
245 °C  
255°C  
240 °C  
217 °C  
250  
200  
150  
100  
50  
max. 30 s  
max. 100 s  
max. 120 s  
Adhesive Tape  
max. Ramp Down 6 °C/s  
max. Ramp Up 3 °C/s  
0
Blister Tape  
0
50  
100  
150  
200  
250  
300  
19841  
Time (s)  
Figure 8. Lead (Pb)-free Reflow Solder Profile acc. J-STD-020B  
for Preconditioning acc. to JEDEC, Level 2a  
948626-1  
Lead Temperature  
TTW Soldering (acc. to CECC00802)  
94 8670  
Component Cavity  
300  
250  
5 s  
Figure 10. Blister Tape  
second  
235 °C...260 °C  
first wave  
full line: typical  
dotted line: process limits  
wave  
200  
150  
100  
ca. 2 K/s  
ca. 200 K/s  
100 °C...130 °C  
3.5  
3.1  
2.2  
2.0  
ca. 5 K/s  
2 K/s  
forced cooling  
50  
0
5.75  
5.25  
0
100  
Time (s)  
250  
50  
150  
200  
4.0  
3.6  
8.3  
7.7  
3.6  
3.4  
Figure 9. Double Wave Solder Profile for Opto Components  
1.85  
1.65  
Drypack  
0.25  
1.6  
1.4  
4.1  
3.9  
4.1  
3.9  
Devices are packed in moisture barrier bags (MBB) to  
prevent the products from moisture absorption during  
transportation and storage. Each bag contains a des-  
iccant.  
2.05  
1.95  
94 8668  
Figure 11. Tape Dimensions in mm for PLCC-2  
Floor Life  
Floor life (time between soldering and removing from  
MBB) must not exceed the time indicated on MBB  
label:  
Floor Life: 4 weeks  
Conditions: T  
< 30 °C, RH < 60 %  
amb  
Moisture Sensitivity Level 2a, acc. to J-STD-020B.  
Drying  
In case of moisture absorption devices should be  
baked before soldering. Conditions see J-STD-020 or  
Label. Devices taped on reel dry using recommended  
conditions 192 h at 40 °C (+ 5 °C), RH < 5 %.  
Document Number 81241  
Rev. 1.5, 25-Jan-07  
www.vishay.com  
5
VSMF3710  
Vishay Semiconductors  
Missing Devices  
10.4  
A maximum of 0.5 % of the total number of compo-  
nents per reel may be missing, exclusively missing  
components at the beginning and at the end of the  
reel. A maximum of three consecutive components  
may be missing, provided this gap is followed by six  
consecutive components.  
8.4  
120°  
4.5  
3.5  
13.00  
12.75  
2.5  
1.5  
62.5  
60.0  
Identification  
Label:  
Vishay  
Type  
Group  
Tape Code  
Production  
Code  
14.4 max.  
De-reeling direction  
321  
329  
94 8158  
Quantity  
18857  
Figure 14. Dimensions of Reel-GS18  
> 160 mm  
Cover Tape Removal Force  
40 empty  
compartments  
min. 75 empty  
compartments  
The removal force lies between 0.1 N and 1.0 N at a  
removal speed of 5 mm/s. In order to prevent compo-  
nents from popping out of the bliesters, the cover tape  
must be pulled off at an angle of 180° with regard to  
the feed direction.  
Tape leader  
Carrier leader  
Carrier trailer  
Figure 12. Beginning and End of Reel  
The tape leader is at least 160 mm and is followed by  
a carrier tape leader with at least 40 empty comparte-  
ments. The tape leader may include the carrier tape  
as long as the cover tape is not connected to the car-  
rier tape. The least component is followed by a carrier  
tape trailer with a least 75 empty compartements and  
sealed with cover tape.  
10.0  
9.0  
120°  
4.5  
3.5  
13.00  
12.75  
2.5  
1.5  
63.5  
60.5  
Identification  
Label:  
Vishay  
Type  
Group  
Tape Code  
Production  
Code  
14.4 max.  
180  
178  
Quantity  
94 8665  
Figure 13. Dimensions of Reel-GS08  
www.vishay.com  
6
Document Number 81241  
Rev. 1.5, 25-Jan-07  
VSMF3710  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Document Number 81241  
Rev. 1.5, 25-Jan-07  
www.vishay.com  
7
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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