VSMY7850X01 [VISHAY]
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology; 高功率红外发光二极管， 850纳米，表面发射器技术
| 型号： | VSMY7850X01 |
| 厂家： | 
VISHAY |
| 描述： | High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology |
| 文件： | 总7页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSMY7850X01
Vishay Semiconductors
www.vishay.com
High Power Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
FEATURES
• Package type: surface mount
• Package form: Little Star®
• Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5
• Peak wavelength: p = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = 60ꢀ
• Low forward voltage
• Designed for high drive currents: up to 1 A DC and up to
5 A pulses
21783
• Low thermal resistance: RthJP = 10 K/W
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DESCRIPTION
VSMY7850X01 is an infrared, 850 nm emitting diode based
on surface emitter technology with high radiant power and
high speed, molded in low thermal resistance Little Star
package. A 42 mil chip provides outstanding low forward
voltage and allows DC operation of the device up to 1 A.
APPLICATIONS
• Infrared illumination for CMOS cameras (CCTV)
• Driver assistance systems
• Machine vision IR data transmission
• 3D TV
PRODUCT SUMMARY
tr (ns)
COMPONENT
Ie (mW/sr)
(deg)
p (nm)
VSMY7850X01
170
60
850
20
Note
•
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Tape and reel
REMARKS
MOQ: 2000 pcs, 2000 pcs/reel
PACKAGE FORM
VSMY7850X01-GS08
Little Star
Note
MOQ: minimum order quantity
•
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 ꢀC, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
V
Reverse voltage
VR
5
1
Forward current
IF
A
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp 100 μs
IFM
2
A
tp = 100 μs
IFSM
PV
5
A
2.5
125
W
ꢀC
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/pin
Tj
Tamb
Tstg
Tsd
- 40 to + 100
- 40 to + 100
260
ꢀC
ꢀC
Acc. figure 7, J-STD-20
ꢀC
Acc. J-STD-051, soldered on PCB
RthJP
10
K/W
Rev. 1.0, 27-Jun-11
Document Number: 81145
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7850X01
Vishay Semiconductors
www.vishay.com
3
2.5
2
1.2
1.0
0.8
0.6
0.4
0.2
0
1.5
1
RthJP = 10 K/W
RthJP = 10 K/W
0.5
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 ꢀC, unless otherwise specified)
PARAMETER
TEST CONDITION
IF = 1 A, tp = 20 ms
IF = 5 A, tp = 100 μs
IF = 1 A
SYMBOL
MIN.
TYP.
2.0
MAX.
UNIT
V
VF
VF
TKVF
IR
2.5
Forward voltage
3.5
V
Temperature coefficient of VF
Reverse current
- 0.2
mV/K
μA
V
R = 5 V
not designed for reverse operation
IF = 1 A, tp = 20 ms
IF = 5 A, tp = 100 μs
IF = 1 A, tp = 20 ms
IF = 1 A
Ie
130
170
780
520
- 0.5
60
390
mW/sr
mW/sr
mW
%/K
deg
nm
Radiant intensity
Ie
Radiant power
e
Temperature coefficient of e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of p
Rise time
TKe
IF = 1 A
IF = 1 A
IF = 1 A
IF = 1 A
IF = 1 A
p
850
30
TKp
tr
nm
0.2
15
nm/K
ns
Fall time
tf
18
ns
Rev. 1.0, 27-Jun-11
Document Number: 81145
2
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7850X01
Vishay Semiconductors
www.vishay.com
BASIC CHARACTERISTICS (Tamb = 25 ꢀC, unless otherwise specified)
0°
10°
20°
10
30°
40°
tp = 100 µs
1
1.0
0.1
0.9
50°
60°
0.8
0.01
70°
80°
0.7
0.001
0
1
2
3
4
0.6
0.4
0.2
0
VF - Forward Voltage (V)
94 8013
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
1000
tp = 100 µs
100
10
1
0.01
0.1
1
10
IF - Forward Current (A)
Fig. 4 - Radiant Intensity vs. Forward Current
1
0.75
0.5
0.25
0
650
750
850
950
λ- Wavelength (nm)
21776
Fig. 5 - Relative Radiant Power vs. Wavelength
Rev. 1.0, 27-Jun-11
Document Number: 81145
3
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7850X01
Vishay Semiconductors
www.vishay.com
TAPING DIMENSIONS in millimeters
20846
Rev. 1.0, 27-Jun-11
Document Number: 81145
4
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7850X01
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters
20848
Rev. 1.0, 27-Jun-11
Document Number: 81145
5
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7850X01
Vishay Semiconductors
www.vishay.com
SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
300
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
200
150
100
50
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
max. 30 s
Floor life: 4 weeks
max. 100 s
max. 120 s
Conditions: Tamb < 30 ꢀC, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020B
max. ramp down 6 °C/s
max. ramp up 3 °C/s
DRYING
0
0
50
100
150
200
250
300
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 ꢀC (+ 5 ꢀC), RH < 5 %.
19841
Time (s)
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 for
Preconditioning acc. to JEDEC, Level 2a
Rev. 1.0, 27-Jun-11
Document Number: 81145
6
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Revision: 12-Mar-12
Document Number: 91000
1
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