VSS8D5M15 [VISHAY]

Surface-Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier;


型号：	VSS8D5M15
厂家：	VISHAY
描述：	Surface-Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier
文件：	总5页 (文件大小：115K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

VSS8D5M15

Vishay General Semiconductor

www.vishay.com

Surface-Mount TMBS^®(Trench MOS Barrier Schottky) Rectifier

FEATURES

eSMP Series

Available

• Low-profile package

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

• Compatible to SOD-128 package case outline

• Material categorization: for definitions of compliance

Top View

Bottom View

please see www.vishay.com/doc?99912

SlimSMAW (DO-221AD)

TYPICAL APPLICATIONS

Cathode

Anode

For use in high frequency inverters, freewheeling, DC/DC

converters, and polarity protection in commercial, industrial,

and automotive applications.

click logo to get started

DESIGN SUPPORT TOOLS

Models

MECHANICAL DATA

Available

Case: SlimSMAW (DO-221AD)

Molding compound meets UL 94 V-0 flammability rating 

Base P/N-M3 - halogen-free, RoHS-compliant

PRIMARY CHARACTERISTICS

I_F(AV)

5 A

Base P/NHM3

- halogen-free, RoHS-compliant, and

V_RRM

I_FSM

150 V

100 A

0.68 V

175 °C

AEC-Q101 qualified

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

V_Fat I_F= 5 A (T_A= 125 °C)

T_Jmax.

M3 and HM3 suffix meet JESD 201 class 2 whisker test

Package

SlimSMAW (DO-221AD)

Single

Polarity: color band denotes cathode end

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VSS8D5M15

UNIT

Device marking code

5M15

150

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum average forward rectified current (fig.1)

(2)

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

100

(3)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

(2)

(3)

Mounted on 30 mm x 30 mm aluminum PCB pad areas

Free air, mounted on recommended copper pad area

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_JA

Revision: 21-Jan-2019

Document Number: 87448

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VSS8D5M15

Vishay General Semiconductor

www.vishay.com

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

0.79

1.03

0.57

0.68

0.01

0.7

MAX.

UNIT

I_F= 2.5 A

T_A= 25 °C

I_F= 5 A

I_F= 2.5 A

I_F= 5 A

1.15

(1)

Instantaneous forward voltage

V_F

T_A= 125 °C

0.76

T_A= 25 °C

T_A= 125 °C

T_A= 25 °C

T_A= 125 °C

V_R= 100 V

0.18

(2)

Reverse current

I_R

V_R= 150 V

Typical junction capacitance

4.0 V, 1 MHz

C_J

300

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: pulse width  5 ms

(2)

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TYP.

120

MAX.

UNIT

(1)(2)

R_JA

150

Typical thermal resistance

°C/W

(3)

R_JM

Notes

(1)

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_JA

Thermal resistance junction-to-ambient to follow JEDEC^®51-2A, device mounted on FR4 PCB, 2 oz., standard footprint

Thermal resistance junction-to-mount to follow JEDEC 51-14 transient dual interface test method (TDIM)

(2)

(3)

ORDERING INFORMATION (Example)

PREFERRED P/N

VSS8D5M15-M3/H

VSS8D5M15-M3/I

VSS8D5M15HM3/H ⁽¹⁾

VSS8D5M15HM3/I ⁽¹⁾

UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY

DELIVERY MODE

0.033

3500

14 000

3500

7" diameter plastic tape and reel

13" diameter plastic tape and reel

7" diameter plastic tape and reel

13" diameter plastic tape and reel

14 000

Note

(1)

AEC-Q101 qualified

Revision: 21-Jan-2019

Document Number: 87448

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VSS8D5M15

Vishay General Semiconductor

www.vishay.com

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

Axis Title

10000

1000

100

10000

1000

100

T_J= 175 °C

R_thJM= 10.0 °C/W

T_J= 150 °C

T_J= 125 °C

T_J= 100 °C

0.1

0.01

R_thJA= 120 °C/W

0.001

0.0001

0.00001

T_J= 25 °C

T_Mmeasured at cathode

terminal mount typical values

T_J= -40 °C

100 125 150 175

100

Mount Temperature (°C)

Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 4 - Typical Reverse Leakage Characteristics

Axis Title

5.0

4.0

3.0

2.0

1.0

10000

1000

10000

T_J= 25 °C

f = 1.0 MHz

D = 0.8

V_sig= 50 mV_p-p

D = 0.5

D = 0.3

1000

100

1000

100

D = 1.0

D = 0.2

D = 0.1

100

D = t_p/T

t_p

0.5

1.5

2.5

3.5

4.5

5.5

0.1

100

1000

Average Forward Current (A)

Reverse Voltage (V)

Fig. 2 - Forward Power Loss Characteristics

Fig. 5 - Typical Junction Capacitance

Axis Title

10000

1000

100

1000

100

10000

1000

100

Junction to ambient

T_J= 175 °C

T_J= 150 °C

T_J= 125 °C

T_J= 100 °C

T_J= 25 °C

T_J= -40 °C

0.1

0.01

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Instantaneous Forward Voltage (V)

0.1

100

t - Pulse Duration (s)

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 6 - Typical Transient Thermal Impedance

Revision: 21-Jan-2019

Document Number: 87448

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VSS8D5M15

Vishay General Semiconductor

www.vishay.com

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SlimSMAW (DO-221AD)

Cathode band

0.106 (2.70)

0.091 (2.30)

0.075 (1.90)

0.063 (1.60)

0.032 (0.81)

0.014 (0.36)

0.024 (0.60)

0.012 (0.30)

0.158 (4.00)

0.142 (3.60)

0.197 (5.00)

0.173 (4.40)

0.043 (1.10)

0.035 (0.90)

0.083 (2.10) min.

0.055 (1.40) min.

0.009 (0.22)

0.004 (0.10)

0.118 (3.00) max.

0.055 (1.40) min.

0.228 (5.80) ref.

Mounting pad layout

Revision: 21-Jan-2019

Document Number: 87448

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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www.vishay.com

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Disclaimer

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Revision: 01-Jan-2021

Document Number: 91000

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