VSSA3L6S-M3-5AT [VISHAY]
Surface Mount Trench MOS Barrier Schottky Rectifier; 表面贴装Trench MOS势垒肖特基整流器
| 型号： | VSSA3L6S-M3-5AT |
| 厂家： | 
VISHAY |
| 描述： | Surface Mount Trench MOS Barrier Schottky Rectifier |
| 文件： | 总4页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
VSSA3L6S
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
TMBS®
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Not recommended for PCB bottom side wave mounting
DO-214AC (SMA)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
• Halogen-free according to IEC 61249-2-21 definition
IF(AV)
3.0 A
60 V
MECHANICAL DATA
VRRM
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
IFSM
80 A
VF at IF = 3.0 A
TJ max.
0.41 V
150 °C
Base P/N-M3
- halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSA3L6S
UNIT
Device marking code
3L6
60
Maximum repetitive peak reverse voltage
VRRM
V
A
(1)
IF
3.0
2.5
Maximum DC forward current
(2)
IF
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
80
A
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Notes
dV/dt
10 000
V/μs
°C
TJ, TSTG
- 55 to + 150
(1)
Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB
(2)
Free air, mounted on recommended copper pad area
Document Number: 89346
Revision: 18-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
VSSA3L6S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.49
0.41
-
MAX.
0.58
0.50
1500
30
UNIT
TA = 25 °C
(1)
Instantaneous forward voltage
IF = 3.0 A
VF
V
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
pF
(2)
Reverse current
VR = 60 V
IR
6.0
Typical junction capacitance
4.0 V, 1 MHz
CJ
395
-
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
VSSA3L6S
UNIT
(1)
RθJA
115
15
Typical thermal resistance
°C/W
(2)
RθJM
Notes
(1)
Free air, mounted on recommended PCB, 1 oz. pad area; thermal resistance RθJA - junction to ambient
Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB; RθJM - junction to mount
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
VSSA3L6S-M3/61T
VSSA3L6S-M3/5AT
UNIT WEIGHT (g)
0.064
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
61T
5AT
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
0.064
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
3.5
3.0
2.5
2.0
1.5
1.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
TM Measured at Terminal
0.5
0
D = tp/T
tp
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
Average Forward Current (A)
0
25
50
75
100
125
150
TM - Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89346
Revision: 18-Oct-10
New Product
VSSA3L6S
Vishay General Semiconductor
100
10
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
1000
100
10
TA = 125 °C
1
TA = 100 °C
TA = 25 °C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
1000
100
10
Junction to Ambient
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
0.1
0.01
0.001
TA = 25 °C
1
0.01
20
40
60
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 89346
Revision: 18-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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Vishay
Disclaimer
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Document Number: 91000
Revision: 11-Mar-11
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