VSSC8L45-M3 [VISHAY]
Trench MOS Schottky technology;
| 型号： | VSSC8L45-M3 |
| 厂家： | 
VISHAY |
| 描述： | Trench MOS Schottky technology |
| 文件： | 总4页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSSC8L45-M3
Vishay General Semiconductor
www.vishay.com
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
TMBS®
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-214AB (SMC)
TYPICAL APPLICATIONS
For use in high frequency converters, freewheeling diodes,
DC/DC converters and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
8.0 A
45 V
VRRM
MECHANICAL DATA
IFSM
VF at IF = 8.0 A (TA = 125 °C)
TJ max.
140 A
0.39 V
150 °C
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3
-
halogen-free and RoHS-compliant,
commercial grade
Package
DO-214AB (SMC)
Single die
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Diode variation
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSC8L45
8L45
45
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
V
A
(1)
IF
8.0
Maximum DC forward current
(2)
IF
4.9
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
140
A
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Notes
(1)
Units mounted on 3 cm x 3 cm Aluminum, 2 oz. PCB
Free air, mounted on recommended copper pad area
(2)
Revision: 04-Mar-14
Document Number: 87793
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSC8L45-M3
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.42
0.48
0.32
0.39
-
MAX.
-
UNIT
IF = 4.0 A
TA = 25 °C
IF = 8.0 A
IF = 4.0 A
IF = 8.0 A
0.56
-
(1)
Instantaneous forward voltage
VF
V
TA = 125 °C
0.48
1.85
40
TA = 25 °C
(2)
Reverse current
VR = 45 V
IR
mA
pF
TA = 125 °C
13
Typical junction capacitance
4.0 V, 1 MHz
CJ
1216
-
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 5 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSC8L45
UNIT
(1)
RJA
70
8
Typical thermal resistance
°C/W
(2)
RJM
Notes
(1)
Free air, mounted on recommended PCB 2 oz. pad area; thermal resistance RJA - junction to ambient
Units mounted on 3 cm x 3 cm Aluminum, 2 oz. pad area; thermal resistance RJM - junction to mount
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
VSSC8L45-M3/57T
VSSC8L45-M3/9AT
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.235
0.235
57T
9AT
850
7" diameter plastic tape and reel
13" diameter plastic tape and reel
3500
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
9
8
7
6
5
4
3
2
1
0
4.5
4
Mounted on Al PCB, R
= 8 °C/W
θJM
D = 0.8
D = 0.5
3.5
3
D = 0.3
D = 0.2
Mounted on Recommended
Copper Pad Area (RθJA = 70 °C/W
D = 1.0
2.5
2
D = 0.1
T
1.5
1
0.5
0
D = tp/T
tp
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
Ambient Temperature (°C) (D=duty cycle=0.5)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 04-Mar-14
Document Number: 87793
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSC8L45-M3
Vishay General Semiconductor
www.vishay.com
10 000
1000
100
TJ = 25°C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
TA = 150°C
TA = 125°
C
TA = 100°C
TA = 25°C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
100
10
1
TA = 150°C
Junction to Ambient
TA = 125°C
10
TA = 100°C
1
0.1
TA = 25°C
0.01
0.001
10
20
30
40
50
60
70
80
90 100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 04-Mar-14
Document Number: 87793
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 13-Jun-16
Document Number: 91000
1
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