VT3080S-M3-4W [VISHAY]
Trench MOS Barrier Schottky Rectifier; Trench MOS势垒肖特基整流器
| 型号： | VT3080S-M3-4W |
| 厂家： | 
VISHAY |
| 描述： | Trench MOS Barrier Schottky Rectifier |
| 文件： | 总5页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
VT3080S, VIT3080S
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-220AB
TO-262AA
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3
3
2
2
1
1
VT3080S
VIT3080S
• Halogen-free according to IEC 61249-2-21 definition
PIN 1
PIN 1
PIN 2
CASE
PIN 2
K
PIN 3
PIN 3
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
30 A
80 V
VRRM
IFSM
200 A
0.73 V
150 °C
Base P/N-M3
- halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualified
VF at IF = 30 A
TJ max.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT3080S
VIT3080S
UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
VRRM
80
30
V
A
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
Document Number: 89242
Revision: 23-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VT3080S, VIT3080S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.47
0.61
0.82
0.39
0.57
0.73
70
MAX.
UNIT
IF = 5 A
-
-
IF = 15 A
IF = 30 A
IF = 5 A
TA = 25 °C
0.95
-
(1)
Instantaneous forward voltage per diode
VF
V
IF = 15 A
IF = 30 A
TA = 125 °C
-
0.82
1000
45
TA = 25 °C
μA
(2)
Reverse current per diode
VR = 80 V
IR
TA = 125 °C
23
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT3080S
VIT3080S
UNIT
Typical thermal resistance
RθJC
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
TO-262AA
TO-220AB
TO-262AA
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
VT3080S-M3/4W
1.88
1.45
1.88
1.45
4W
4W
4W
4W
Tube
Tube
Tube
Tube
VIT3080S-M3/4W
VT3080SHM3/4W (1)
VIT3080SHM3/4W (1)
50/tube
50/tube
50/tube
Note
(1)
AEC-Q101 qualified
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89242
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VT3080S, VIT3080S
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
100
10
TA = 150 °C
TA = 125 °C
Resistive or Inductive Load
30
25
20
15
10
TA = 100 °C
TA = 25 °C
1
0.1
0.01
5
Mounted on Specific Heatsink
0
0.001
0
25
50
75
100
125
150
175
20
30
40
50
60
70
80
90 100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
30
10
D = 0.8
D = 0.5
D = 0.3
Junction to Case
25
20
15
10
5
D = 0.2
D = 0.1
D = 1.0
1
T
D = tp/T
tp
0
0.1
0.01
0
5
10
15
20
25
30
35
0.1
1
10
100
Average Forward Current (A)
t - Pulse Duration (s)
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 5 - Typical Transient Thermal Impedance
100
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
10
1
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.1
0.1
1
10
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
Document Number: 89242
Revision: 23-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VT3080S, VIT3080S
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.350 (8.89)
0.330 (8.38)
1
3
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45) MAX.
0.250 (6.35) MIN.
K
0.055 (1.40)
0.047 (1.19)
30° (TYP.)
(REF.)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.950 (24.13)
0.920 (23.37)
0.510 (12.95)
0.470 (11.94)
0.330 (8.38)
PIN
1
2
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.560 (14.22)
0.530 (13.46)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.35)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89242
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Document Number: 91000
Revision: 11-Mar-11
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