VT30L60C-E3-4W [VISHAY]
Dual Trench MOS Barrier Schottky Rectifier; 双Trench MOS势垒肖特基整流器
| 型号： | VT30L60C-E3-4W |
| 厂家： | 
VISHAY |
| 描述： | Dual Trench MOS Barrier Schottky Rectifier |
| 文件： | 总5页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
VT30L60C, VIT30L60C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.32 V at IF = 5.0 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-220AB
TO-262AA
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3
3
2
2
1
1
TYPICAL APPLICATIONS
VT30L60C
VIT30L60C
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
PIN 1
PIN 1
PIN 2
K
PIN 2
CASE
PIN 3
PIN 3
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, and commercial grade
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
60 V
VRRM
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
IFSM
200 A
0.45 V
150 °C
VF at IF = 15 A
TJ max.
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT30L60C
VIT30L60C
UNIT
Maximum repetitive peak reverse voltage
VRRM
60
30
15
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
Document Number: 89380
Revision: 07-Dec-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
VT30L60C, VIT30L60C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.43
0.46
0.51
0.32
0.36
0.45
-
MAX.
UNIT
IF = 5.0 A
-
-
IF = 7.5 A
IF = 15 A
IF = 5.0 A
IF = 7.5 A
IF = 15 A
TA = 25 °C
0.60
-
(1)
Instantaneous forward voltage per diode
VF
V
TA = 125 °C
-
0.57
4.0
110
TA = 25 °C
(2)
Reverse current per diode
VR = 60 V
IR
mA
TA = 125 °C
27
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT30L60C
VIT30L60C
UNIT
per diode
per device
1.8
0.8
Typical thermal resistance
RθJC
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
TO-262AA
PREFERRED P/N
VT30L60C-E3/4W
VIT30L60C-E3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
1.85
1.46
4W
4W
Tube
Tube
50/tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
30
25
20
15
10
5
10
9
D = 0.5
D = 0.8
D = 0.3
8
7
D = 0.2
6
5
4
3
2
1
0
D = 1.0
D = 0.1
T
D = tp/T
12
tp
0
0
25
50
75
100
125
150
0
2
4
6
8
10
14
16
18
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89380
Revision: 07-Dec-10
New Product
VT30L60C, VIT30L60C
Vishay General Semiconductor
100
10
1
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
1000
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.1
100
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Transient Thermal Impedance Per Diode
1000
10
Junction to Case
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
1
0.1
TA = 25 °C
0.01
0.001
0.1
0.01
0.1
1
10
100
20
40
60
80
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Document Number: 89380
Revision: 07-Dec-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
New Product
VT30L60C, VIT30L60C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.350 (8.89)
0.330 (8.38)
1
3
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45) MAX.
0.250 (6.35) MIN.
K
0.055 (1.40)
0.047 (1.19)
30° (TYP.)
(REF.)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.950 (24.13)
0.920 (23.37)
0.510 (12.95)
0.470 (11.94)
0.330 (8.38)
PIN
1
2
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.560 (14.22)
0.530 (13.46)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.35)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89380
Revision: 07-Dec-10
Legal Disclaimer Notice
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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相关型号：
VT30L60C-E3/4W
DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
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