ZMY6V8 [VISHAY]
Zener Diodes; 齐纳二极管
| 型号： | ZMY6V8 |
| 厂家： | 
VISHAY |
| 描述： | Zener Diodes |
| 文件： | 总6页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZMY3V9 to ZMY110
Vishay Semiconductors
Zener Diodes
Features
• Silicon Planar Power Zener Diodes.
• For use in stablilizing and clipping circuits with
high power rating.
• The Zener voltages are graded according to the
international E 24 standard. Smaller voltage toler-
ances are available upon request.
• These diodes are also available in the DO-41 case
with the type designation ZPY1 ... ZPY100.
18315
Packaging Codes/Options:
Mechanical Data
GS18/ 5 k per 13 " reel (12 mm tape), 10 k/box
GS08/ 1.5 k per 7 " reel (12 mm tape), 12 k/box
Case: MELF Glass case
Weight: approx. 135 mg
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Ptot
Value
1.0 1)
Unit
W
Zener current (see Table
"Characteristics")
Power dissipation
1) Valid provided that electrodes are kept at ambient temperature.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
RthJA
Value
170 1)
Unit
Thermal resistance junction to
ambient (max.)
°C/W
Thermal resistance junction to
case (typ.)
RthJC
60
°C/W
Junction temperature
Storage temperature
Tj
175
°C
°C
TS
- 55 to + 175
1) Valid provided that electrodes are kept at ambient temperature.
Document Number 85788
Rev. 1.5, 12-Jan-05
www.vishay.com
1
ZMY3V9 to ZMY110
Vishay Semiconductors
Electrical Characteristics
Partnumber
Zener Voltage (2)
VZ @ IZT
Dynamic Resistance
rzj @ IZT, f = 1 kHz
Temperature Coefficient
of Zener Voltage
Test
Current
Reverse
Voltage
Admissible
Zener
Current (1)
α
VZ @ IZT
IZT
VR
@
IZ @
IR = 0.5 µA Tamb=25°C
10-4/°C
V
Ω
mA
V
mA
min
max
typ
min
-7
-7
-7
-6
-3
-1
0
max
ZMY3V9
ZMY4V3
ZMY4V7
ZMY5V1
ZMY5V6
ZMY6V2
ZMY6V8
ZMY7V5
ZMY8V2
ZMY9V1
ZMY10
ZMY11
ZMY12
ZMY13
ZMY15
ZMY16
ZMY18
ZMY20
ZMY22
ZMY24
ZMY27
ZMY30
ZMY33
ZMY36
ZMY39
ZMY43
ZMY47
ZMY51
ZMY56
ZMY62
ZMY68
ZMY75
ZMY82
ZMY91
ZMY100
ZMY110
3.7
4
4.1
4.6
5
7
7
4
4
2
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
-
-
203
182
165
150
135
128
110
100
89
82
74
66
60
55
49
44
40
36
34
29
27
25
22
20
18
17
15
14
13
11
10
9
3
4.4
4.8
5.2
5.8
6.4
7
7
4
4
-
5.4
6
5
2
5
0.7
1.5
2
2
1
5
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.8
17.1
19.1
21.2
23.3
25.6
28.9
32
2
1
6
2
1
7
3
2
1
0
7
5
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
2
1
3
8
6
4
2
3
8
7
4
2
5
9
7.5
8.5
9
7
3
5
10
10
10
10
11
11
11
11
12
12
12
12
12
12
13
13
13
13
13
13
13
13
13
13
13
7
3
5
9
4
5
10
11
12
14
15
17
18
20
22.5
25
27
29
32
35
38
42
47
51
56
61
68
75
82
9
4
5
10
11
12
13
14
15
20
20
60
60
80
80
100
100
130
130
160
160
250
250
250
5
7
5
7
6
7
7
7
8
7
9
7
10
11
25
30
35
40
45
50
60
65
70
80
120
130
150
7
31
35
7
34
38
7
37
41
8
40
46
8
44
50
8
48
54
8
52
60
8
58
66
8
64
72
8
70
79
8
77
88
8
8
85
96
9
7.5
7
94
106
116
9
5
104
9
5
6.4
1) Valid provided that electrodes are kept at ambient temperature
2) Tested with pulses tp = 5 ms
The ZMY1 is a silicon diode operated in forward direction.Hence, the index of all characteristics and maximum ratings should be "F"instead
of "Z". Connect the cathode terminal to the negative pole. For devices in glass case MELF with higher Zener voltage but same power dis-
sipation see types ZMU100 ... ZMU180
www.vishay.com
2
Document Number 85788
Rev. 1.5, 12-Jan-05
ZMY3V9 to ZMY110
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
18289
18312
Figure 1. Dynamic Resistance vs. Zener Current
Figure 4. Admissible Power Dissipation vs. Ambient Temperature
18286
18313
Figure 2. Dynamic Resistance vs. Zener Current
Figure 5. Pulse Thermal Resistance vs. Pulse Duration
ZMY100
ZMY82
ZMY68
ZMY56
ZMY43
18314
Figure 3. Dynamic Resistance vs. Zener Current
Document Number 85788
Rev. 1.5, 12-Jan-05
www.vishay.com
3
ZMY3V9 to ZMY110
Vishay Semiconductors
18309
Figure 6. Breakdown Characteristics
18310
Figure 7. Breakdown Characteristics
www.vishay.com
4
Document Number 85788
Rev. 1.5, 12-Jan-05
ZMY3V9 to ZMY110
Vishay Semiconductors
18311
Figure 8. Breakdown Characteristics
Package Dimensions in mm (Inches)
4.00 (0.157)
MAX
Cathode Mark
ISO Method E
1.25
(0.049)
MIN
3.00 (0.118)
MIN
0.55 (0.022)
6.50 (0.256)
REF
5.2 (0.205)
4.8 (0.189)
18317
Document Number 85788
Rev. 1.5, 12-Jan-05
www.vishay.com
5
ZMY3V9 to ZMY110
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
6
Document Number 85788
Rev. 1.5, 12-Jan-05
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