ZMY8V2GS08 [VISHAY]

DIODE 8.2 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT, GLASS PACKAGE-2, Voltage Regulator Diode;
ZMY8V2GS08
型号: ZMY8V2GS08
厂家: VISHAY    VISHAY
描述:

DIODE 8.2 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT, GLASS PACKAGE-2, Voltage Regulator Diode

测试 二极管
文件: 总7页 (文件大小:143K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ZMY3V9 to ZMY100  
Vishay Semiconductors  
Zener Diodes  
Features  
• Silicon Planar Power Zener Diodes  
• For use in stablilizing and clipping circuits  
with high power rating  
e2  
• The Zener voltages are graded according  
to the international E 24 standard. Smaller voltage  
tolerances are available upon request  
• These diodes are also available in the DO41 case  
with the type designation ZPY3V9 to ZPY100  
18315  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Mechanical Data  
Case: MELF Glass case  
Weight: approx. 135 mg  
Cathode Band Color: black  
Packaging Codes/Options:  
GS18/ 5 k per 13" reel (12 mm tape), 10 k/box  
GS08/ 1.5 k per 7" reel (12 mm tape), 12 k/box  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Zener current (see Table "Characteristics")  
Power dissipation  
Test condition  
Symbol  
Ptot  
Value  
1.01)  
Unit  
W
1) Valid provided that electrodes are kept at ambient temperature.  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
1701)  
Unit  
K/W  
K/W  
°C  
Thermal resistance junction to ambient air  
Thermal resistance junction to case  
Junction temperature  
RthJC  
Tj  
60  
175  
Tstg  
Storage temperature  
- 55 to + 175  
°C  
1) Valid provided that electrodes are kept at ambient temperature.  
Document Number 85788  
Rev. 1.7, 07-Aug-06  
www.vishay.com  
1
ZMY3V9 to ZMY100  
Vishay Semiconductors  
Electrical Characteristics  
Partnumber  
Zener Voltage (2)  
VZ at IZT  
Dynamic Resistance  
rzj at IZT, f = 1 kHz  
Temperature  
Coefficient of  
Zener Voltage  
Test  
Current  
Reverse Voltage  
Admissible Zener  
Current1)  
α
VZ at IZT  
IZT  
VR at  
IZ at  
IR = 0.5 µA  
Tamb = 25 °C  
10-4/°C  
V
Ω
mA  
V
mA  
min  
max  
typ  
min  
max  
2
ZMY3V9  
ZMY4V3  
ZMY4V7  
ZMY5V1  
ZMY5V6  
ZMY6V2  
ZMY6V8  
ZMY7V5  
ZMY8V2  
ZMY9V1  
ZMY10  
ZMY11  
ZMY12  
ZMY13  
ZMY15  
ZMY16  
ZMY18  
ZMY20  
ZMY22  
ZMY24  
ZMY27  
ZMY30  
ZMY33  
ZMY36  
ZMY39  
ZMY43  
ZMY47  
ZMY51  
ZMY56  
ZMY62  
ZMY68  
ZMY75  
ZMY82  
ZMY91  
ZMY100  
3.7  
4
4.1  
4.6  
5
7
7
4
4
- 7  
- 7  
- 7  
- 6  
- 3  
- 1  
0
100  
100  
100  
100  
100  
100  
100  
100  
100  
50  
-
-
203  
182  
165  
150  
135  
128  
110  
100  
89  
82  
74  
66  
60  
55  
49  
44  
40  
36  
34  
29  
27  
25  
22  
20  
18  
17  
15  
14  
13  
11  
10  
9
3
4.4  
4.8  
5.2  
5.8  
6.4  
7
7
4
4
-
5.4  
6
5
2
5
0.7  
1.5  
2
2
1
5
6.6  
7.2  
7.9  
8.7  
9.6  
10.6  
11.6  
12.7  
14.1  
15.8  
17.1  
19.1  
21.2  
23.3  
25.6  
28.9  
32  
2
1
6
2
1
7
3
2
1
0
7
5
7.7  
8.5  
9.4  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
2
1
3
8
6
4
2
3
8
7
4
2
5
9
50  
7.5  
8.5  
9
7
3
5
10  
10  
10  
10  
11  
11  
11  
11  
12  
12  
12  
12  
12  
12  
13  
13  
13  
13  
13  
13  
13  
13  
13  
13  
50  
7
3
5
50  
9
4
5
50  
10  
11  
12  
14  
15  
17  
18  
20  
22.5  
25  
27  
29  
32  
35  
38  
42  
47  
51  
56  
61  
68  
75  
9
4
5
50  
10  
11  
12  
13  
14  
15  
20  
20  
60  
60  
80  
80  
100  
100  
130  
130  
160  
160  
250  
250  
5
7
25  
5
7
25  
6
7
25  
7
7
25  
8
7
25  
9
7
25  
10  
11  
25  
30  
35  
40  
45  
50  
60  
65  
70  
80  
120  
130  
7
25  
31  
35  
7
25  
34  
38  
7
10  
37  
41  
8
10  
40  
46  
8
10  
44  
50  
8
10  
48  
54  
8
10  
52  
60  
8
10  
58  
66  
8
10  
64  
72  
8
10  
70  
79  
8
10  
77  
88  
8
10  
8
85  
96  
9
5
7.5  
7
94  
106  
9
5
1) Valid provided that electrodes are kept at ambient temperature  
2) Tested with pulses tp = 5 ms  
www.vishay.com  
2
Document Number 85788  
Rev. 1.7, 07-Aug-06  
ZMY3V9 to ZMY100  
Vishay Semiconductors  
Typical Characteristics  
Tamb = 25 °C, unless otherwise specified  
W
1.0  
Ω
ZMY...  
ZMY...  
103  
5
4
3
2
0.8  
Ptot  
rzj  
ZMY5.1  
102  
ZMY4.3  
0.6  
5
4
ZMY18  
3
ZMY12  
2
0.4  
0.2  
10  
5
4
3
ZMY6.2  
2
ZMY7.5  
ZMY10  
0
1
1
2
3
4
5
10  
2
3
4
5
7
100mA  
7
0
100  
200 °C  
19969  
18312  
Tamb  
IZ  
Figure 1. Dynamic Resistance vs. Zener Current  
Figure 4. Admissible Power Dissipation vs. Ambient Temperature  
Ω
°C/W  
ZMY...  
ZMY...  
103  
100  
7
5
4
3
5
4
2
3
rzj  
rthA  
102  
2
ZMY43  
5
4
3
0.5  
0.2  
ZMY36  
10  
ZMY30  
ZMY24  
ZMY22  
ZMY18  
7
2
5
4
3
10  
0.1  
0.05  
tP  
5
4
3
tP  
___  
v =  
PI  
2
T
0.02  
2
T
0.01  
V= 0  
1
1
10-5 10-4 10-3 10-2 10-1  
1
10s  
1
2
3
4
5
10  
2
3
4
5
100mA  
18313  
IZ  
18286  
tP  
Figure 2. Dynamic Resistance vs. Zener Current  
Figure 5. Pulse Thermal Resistance vs. Pulse Duration  
Ω
ZMY...  
103  
7
5
4
3
rzj  
2
102  
7
ZMY100  
ZMY82  
ZMY68  
ZMY56  
5
4
ZMY43  
3
2
10  
0.1  
2
3
4
5
1
2
3
4
5
10mA  
18314  
IZ  
Figure 3. Dynamic Resistance vs. Zener Current  
Document Number 85788  
Rev. 1.7, 07-Aug-06  
www.vishay.com  
3
ZMY3V9 to ZMY100  
Vishay Semiconductors  
mA  
20  
mA  
ZMY...  
Tj = 25 °C  
ZMY...  
Tj = 25 °C  
240  
ZMY3.9  
ZMY4.7  
ZMY56  
200  
ZMY5.6  
IZ  
IZ  
ZMY6.8  
ZMY68  
ZMY82  
ZMY100  
160  
Test Current lZ  
10 mA  
ZMY8.2  
ZMY10  
Test Current lZ  
100 mA  
10  
120  
ZMY12  
5 mA  
80  
50 mA  
40  
0
0
0
50  
100  
150  
200 V  
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 V  
18311  
18309  
VZ  
VZ  
Figure 6. Breakdown Characteristics  
Figure 8. Breakdown Characteristics  
mA  
60  
ZMY...  
Tj = 25 °C  
ZMY18  
ZMY15  
ZMY22  
50  
40  
IZ  
ZMY27  
Test Current lZ  
25 mA  
ZMY33  
10 mA  
30  
20  
ZMY39  
ZMY47  
10  
0
0
5
10 15 20  
25  
30 35 40 45 50 V  
VZ  
18310  
Figure 7. Breakdown Characteristics  
www.vishay.com  
4
Document Number 85788  
Rev. 1.7, 07-Aug-06  
ZMY3V9 to ZMY100  
Vishay Semiconductors  
Package Dimensions of MELF Glass in mm (Inches): DO41  
Cathode Identification  
18317  
Document Number 85788  
Rev. 1.7, 07-Aug-06  
www.vishay.com  
5
ZMY3V9 to ZMY100  
Vishay Semiconductors  
VISHAY  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
www.vishay.com  
6
Document Number 85788  
Rev. 1.7, 07-Aug-06  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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