ZTE5.1-TAP [VISHAY]
Zener Diode, 5.1V V(Z), 5.88%, 0.3W, Silicon, Unidirectional, DO-35, GLASS PACKAGE-2;
| 型号： | ZTE5.1-TAP |
| 厂家： | 
VISHAY |
| 描述： | Zener Diode, 5.1V V(Z), 5.88%, 0.3W, Silicon, Unidirectional, DO-35, GLASS PACKAGE-2 |
| 文件： | 总6页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZTE Series
Vishay Semiconductors
VISHAY
Voltage Stabilizers
Features
• Silicon Stabilizer Diodes
• Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits, pro-
viding low dynamic resistance and high-quality
stabilization performance as well as low noise. In
the reverse direction, these devices show the
behavior of forward-biased silicon diodes.
94 9367
• The end of the ZTE device marked with the cath-
ode ring is to be connected: ZTE1.5 and ZTE2 to
the negative pole of the supply voltage; ZTE2.4
thru ZTE5.1 to the positive pole of the supply volt-
age.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13 g
Packaging codes/options:
TR / 10k per 13 " reel (52 mm tape), 30k/box
TAP / 10k per Ammo tape, (52 mm tape), 30k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
100
Unit
Operating Current (see Table
"Characteristics")
Inverse Current
I
mA
W
F
1)
Power dissipation
P
tot
300
Junction temperature
Storage temperature range
T
150
°C
°C
J
T
- 55 to + 150
S
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Part
Symbol
Min
Typ.
Value
Unit
-4
Temperature Coefficient of the
stabilized voltage
I = 5 mA
ZTE1.5
α
- 26
Z
VZ
10 /°C
-4
ZTE2
ZTE2.4
ZTE5.1
α
α
- 26
- 34
- 34
VZ
VZ
VZ
θJA
10 /°C
-4
10 /°C
-4
α
10 /°C
1)
Thermal resistance junction to
ambient air
R
°C/W
400
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case
Document Number 85813
Rev. 1.4, 27-Nov-03
www.vishay.com
1
ZTE Series
Vishay Semiconductors
VISHAY
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Min
Typ.
Max
1.1
Unit
V
Forward Voltage
I
= 10 mA
V
F
F
Electrical Characteristics
(2)
(1)
Partnumber
Dynamic Resistance
Operating Voltage
Permissable operating current
I @ T = 25 °C
V
@ I = 5 mA
r
@ I = 5 mA
Z
Z
zj
Z
z
amb
Ω
V
mA
max
120
120
120
105
95
ZTE1.5
ZTE2
1.35 to 1.55
2.0 to 2.3
2.2 to 2.56
2.5 to 2.9
2.8 to 3.2
3.1 to 3.5
3.4 to 3.8
3.7 to 4.1
4.0 to 4.6
4.4 to 5.0
4.8 to 5.4
13(<20)
18(<30)
14(<20)
15(<20)
15(<20)
16(<20)
16(<25)
17(<25)
17(<25)
18(<25)
18(<25)
ZTE2.4
ZTE2.7
ZTE3
ZTE3.3
ZTE3.6
ZTE3.9
ZTE4.3
ZTE4.7
ZTE5.1
90
80
75
65
60
55
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case
(2) Tested with pulses t = 5 ms
p
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
ZTE
5.1
4.3
3.6
3
18231
18232
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Figure 2. Dynamic resistance vs. operating current, normalized
www.vishay.com
2
Document Number 85813
Rev. 1.4, 27-Nov-03
ZTE Series
Vishay Semiconductors
VISHAY
18233
Figure 3. Dynamic resistance vs. operating voltage
ZTE1.5
ZTE2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7
5.1
18229
Figure 4. Breakdown Characteristics
Document Number 85813
Rev. 1.4, 27-Nov-03
www.vishay.com
3
ZTE Series
Vishay Semiconductors
VISHAY
ZTE1.5
ZTE2 2.4 2.7
3
3.3 3.6 3.9 4.3
4.7 5.1
18230
Figure 5. Breakdown Characteristics
Package Dimensions in mm (Inches)
Cathode Identification
technical drawings
according to DIN
specifications
∅ 0.55 (0.021) max.
∅ 1.7 (0.066) max.
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
26 (1.014) min.
3.9 (0.152) max.
26 (1.014) min.
www.vishay.com
4
Document Number 85813
Rev. 1.4, 27-Nov-03
ZTE Series
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85813
Rev. 1.4, 27-Nov-03
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
ZTE5.1-TR
Zener Diode, 5.1V V(Z), 5.88%, 0.3W, Silicon, Unidirectional, DO-35, GLASS PACKAGE-2
VISHAY
©2020 ICPDF网 联系我们和版权申明