ZY120-TR [VISHAY]
Zener Diode, 120V V(Z), 5.39%, 2W, Silicon, Unidirectional, DO-204AM, PLASTIC, DO-41, 2 PIN;
| 型号： | ZY120-TR |
| 厂家： | 
VISHAY |
| 描述： | Zener Diode, 120V V(Z), 5.39%, 2W, Silicon, Unidirectional, DO-204AM, PLASTIC, DO-41, 2 PIN 测试 二极管 |
| 文件： | 总8页 (文件大小：354K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZY3.6 to ZY200
Vishay Semiconductors
VISHAY
Zener Diodes
Features
• Silicon Power Zener Diodes.
• For use in stablilizing and clipping circuits with
high power rating.
• The Zener voltages are graded according to the
international E 24 standard. Smaller voltage toler-
ances are available upon request.
17173
Mechanical Data
Case: DO-41 PLASTIC (DO-204AM)
molded plastic body
Weight: approx. 340 mg
Packaging Codes/Options:
TR/ 5 k per 13 " reel (52 mm tape), 25 k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
Parameter
amb
Test condition
Symbol
Value
Unit
W
Zener current (see table
"Characteristics"
1)
Power dissipation
T
= 25 °C
P
tot
amb
2.0
1)
Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
Unit
1)
Thermal resistance junction to
ambient air
R
°C/W
thJA
60
Junction temperature
Storage temperature
T
150
°C
°C
j
T
- 55 to + 150
S
1)
Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
Document Number 85791
Rev. 1.3, 07-Apr-04
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1
ZY3.6 to ZY200
Vishay Semiconductors
VISHAY
Electrical Characteristics
2)
Partnumber
Dynamic
Resistance
Test
Current
Temperature Coefficient
of Zener Voltage
Reverse
Voltage
Admissible
Zener
Zener Voltage
Current
V
@ I
r
@ I
,
I
α
@ I
V
@ I
=
I @T
=
Z
ZT
zj
ZT
ZT
VZ
ZT
R
R
Z
amb
f = 1 kHz
1 µA
V
25 °C
mA
-4
-4
V
V
Ω
mA
10 /°C
min
-7
-7
-7
-7
-6
-3
-1
0
10 /°C
max
2
min
3.4
3.7
4
max
3.8
4.1
4.6
5
max
7
ZY3V6
ZY3V9
ZY4V3
ZY4V7
ZY5V1
ZY5V6
ZY6V2
ZY6V8
ZY7V5
ZY8V2
ZY9V1
ZY10
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
-
-
-
-
-
440
410
360
330
300
275
245
220
200
180
165
145
120
110
98
7
2
7
3
4.4
4.8
5.2
5.8
6.4
7
7
4
5.4
6
5
5
2
5
> 1.5
> 1.5
6.6
7.2
7.9
8.7
9.6
0.6
12.7
14.1
15.8
17.1
19.1
21.2
23.3
25.6
28.9
32
2
6
2
7
> 2
2
0
7
> 2
7.7
8.5
9.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
2
3
8
> 3.5
4
3
8
> 7.4
4
5
9
> 8.2
ZY12
7
5
10
10
10
11
11
11
11
11
11
11
11
11
11
12
12
12
12
13
13
13
13
13
13
13
13
13
13
13
13
13
> 10
ZY13
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
350
350
5
> 10.7
> 12
ZY15
5
ZY16
6
> 13.3
> 14.7
> 16.5
> 18.3
> 20.1
> 22.5
> 25.1
> 27.8
> 30.2
> 32.9
> 35.6
> 39.2
> 42.8
> 47.3
> 51.7
> 57.1
> 63.2
> 68.6
> 75.7
> 83.7
> 92.6
> 101.6
> 110.5
> 123
>136
90
ZY18
6
80
ZY20
6
72
ZY22
6
66
ZY24
6
60
ZY27
6
53
ZY30
6
48
ZY33
31
35
6
44
ZY36
34
38
6
40
ZY39
37
41
6
37
ZY43
40
46
7
33
ZY47
44
50
7
30
ZY51
48
54
7
27
ZY56
52
60
7
25
ZY62
58
66
8
21
ZY68
64
72
8
20
ZY75
70
79
8
18
ZY82
77
88
8
16
ZY91
85
96
9
15
ZY100
ZY110
ZY120
ZY130
ZY150
ZY160
ZY180
ZY200
94
106
116
127
141
156
171
191
212
5
9
13
104
114
124
138
153
168
188
5
9
12
5
9
11
5
9
10
5
9
9
5
9
8.5
8
5
9
> 149
> 167
5
9
7.5
1)
2)
3)
Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case
Tested with pulses t = 5 ms
p
The ZY1 is a silicon diode operated in forward direction. Hence, the index of all parameters ratings should be "F" instead of "Z". Connect
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Document Number 85791
Rev. 1.3, 07-Apr-04
ZY3.6 to ZY200
Vishay Semiconductors
VISHAY
the cathode lead to the negative pole
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
18730
18718
Fig. 1 Admissible Power Dissipation vs. Ambient Temperature
Fig. 3 Dynamic Resistance vs. Zener Current
18719
18720
Fig. 2 Dynamic Resistance vs. Zener Current
Fig. 4 Dynamic Resistance vs. Zener Current
Document Number 85791
Rev. 1.3, 07-Apr-04
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ZY3.6 to ZY200
Vishay Semiconductors
VISHAY
°C
°C/W
18721
18724
Fig. 5 Thermal Differential Resistance vs. Zener Voltage
Fig. 8 Pulse Thermal Resistance vs. Pulse Duration
°C
18725
18722
Fig. 6 Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
Fig. 9 Thermal Resistance vs. Lead Length
18726
18723
Fig. 7 Relative Change of Zener Voltage vs. Turn-on Time
Fig. 10∆V between V @I
< 1 s and V @Ther. Equil.
Z
Z
ZTpulse
Z
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Document Number 85791
Rev. 1.3, 07-Apr-04
ZY3.6 to ZY200
Vishay Semiconductors
VISHAY
18727
Fig. 11∆V between V @I
< 1 s and V @Ther. Equil.
Z
Z
ZTpulse
ZTpulse
ZTpulse
Z
18728
Fig. 12∆V between V @I
< 1 s and V @Ther. Equil.
Z
Z
Z
18729
Fig. 13∆V between V @I
< 1 s and V @Ther. Equil.
Z
Z
Z
Document Number 85791
Rev. 1.3, 07-Apr-04
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5
ZY3.6 to ZY200
Vishay Semiconductors
VISHAY
ZY3.9
ZY1
ZY4.7
ZY5.6
Test Current IZ
100 mA
ZY6.8
ZY8.2
ZY10
18715
Fig. 14Breakdown Characteristics
18716
Fig. 15Breakdown Characteristics
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Document Number 85791
Rev. 1.3, 07-Apr-04
ZY3.6 to ZY200
Vishay Semiconductors
VISHAY
18717
Fig. 16Breakdown Characteristics
Package Dimensions in mm (Inches)
Cathode Identification
94 9368
∅
0.86 (0.03)max.
technical drawings
according to DIN
specifications
2.6
∅
(0.10) max.
StandardGlass Case
54 B 2 DIN 41880
JEDEC DO 41
26 (1.02) min.
4.1 (0.16) max.
26 (1.02) min.
Document Number 85791
Rev. 1.3, 07-Apr-04
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7
ZY3.6 to ZY200
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 85791
Rev. 1.3, 07-Apr-04
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