关闭背景特效

V60120C-E3/4W [VISHAY]

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A; 双高压Trench MOS势垒肖特基整流器超低VF = 0.41 V在IF = 5 A

V60120C-E3/4W


元器件型号：	V60120C-E3/4W
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A 双高压Trench MOS势垒肖特基整流器超低VF = 0.41 V在IF = 5 A 整流二极管瞄准线高压功效局域网
PDF文件：	总5页 (文件大小：142K)
下载文档：	下载PDF数据表文档文件
型号参数：V60120C-E3/4W参数

V60120C-E3-4W

Dual High Voltage Trench MOS Barrier Schottky Rectifier

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0 VISHAY

V60120CHM3/4W

DIODE 30 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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0 VISHAY

V60120CHM3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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12 VISHAY

V60120C-M3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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16 VISHAY

V60170PW

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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0 VISHAY

V60170PW-M3

High efficiency operation

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0 VISHAY

V60170PW-M3_15

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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0 VISHAY

V60200PG

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

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41 VISHAY

V60200PG-E3/45

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

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11 VISHAY

V60200PGW

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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21 VISHAY

V60200PGW-M3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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20 VISHAY

V6020PGW_15

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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0 VISHAY

V602AS32

High Energy Metal-Oxide Arrester Blocks

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19 LITTELFUSE

V602AS42

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3 ETC

V602MC01

Voltage Controlled Oscillator, 1435MHz Min, 1650MHz Max,

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0 ZCOMM

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