VG26S17400FJ-6 [VML]

4,194,304 x 4 - Bit CMOS Dynamic RAM; 4194304 ×4 - 位CMOS动态RAM
VG26S17400FJ-6
元器件型号: VG26S17400FJ-6
生产厂家: VANGUARD INTERNATIONAL SEMICONDUCTOR    VANGUARD INTERNATIONAL SEMICONDUCTOR
描述和应用:

4,194,304 x 4 - Bit CMOS Dynamic RAM
4194304 ×4 - 位CMOS动态RAM

PDF文件: 总25页 (文件大小:210K)
下载文档:  下载PDF数据表文档文件
型号参数:VG26S17400FJ-6参数

VG26S17405DJ-5

DRAM|EDO|4MX4|CMOS|SOJ|26PIN|PLASTIC

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9 ETC

VG26S17405DJ-6

x4 EDO Page Mode DRAM

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6 ETC

VG26S17405DT-5

x4 EDO Page Mode DRAM

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7 ETC

VG26S17405DT-6

x4 EDO Page Mode DRAM

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5 ETC

VG26S17405EJ-5

x4 EDO Page Mode DRAM

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5 ETC

VG26S17405EJ-6

DRAM|EDO|4MX4|CMOS|SOJ|26PIN|PLASTIC

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5 ETC

VG26S17405ET-5

x4 EDO Page Mode DRAM

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5 ETC

VG26S17405ET-6

x4 EDO Page Mode DRAM

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7 ETC

VG26S17405J-5

4,194,304 x 4 - Bit CMOS Dynamic RAM

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29 VML

VG26S17405J-6

4,194,304 x 4 - Bit CMOS Dynamic RAM

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21 VML

VG26S18165CJ-5

1,048,576 x 16 - Bit CMOS Dynamic RAM

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32 VML

VG26S18165CJ-6

1,048,576 x 16 - Bit CMOS Dynamic RAM

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32 VML

VG26V16405DJ-5

x4 EDO Page Mode DRAM

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10 ETC

VG26V16405DJ-6

x4 EDO Page Mode DRAM

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5 ETC

VG26V16405DT-5

x4 EDO Page Mode DRAM

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3 ETC