5962-9669101HXX [WEDC]
Standard SRAM, 128KX8, 120ns, CMOS, CDFP36, CERAMIC, FP-36;
| 型号： | 5962-9669101HXX |
| 厂家： | 
WHITE ELECTRONIC DESIGNS CORPORATION |
| 描述： | Standard SRAM, 128KX8, 120ns, CMOS, CDFP36, CERAMIC, FP-36 CD 静态存储器 |
| 文件： | 总8页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WMS128K8-XXX
HI-RELIABILITY PRODUCT
128Kx8 MONOLITHIC SRAM, SMD 5962-96691 (pending)
FEATURES
■ Commercial, Industrial and Military Temperature Range
■ 5 Volt Power Supply
■ Access Times 70, 85, 100, 120ns
■ Revolutionary, Center Power/Ground Pinout
JEDEC Approved
• 32 lead Ceramic SOJ (Package 101)
■ Low Power CMOS
■ 2V Data Retention Devices Available
■ Evolutionary, Corner Power/Ground Pinout
(Low Power Version)
JEDEC Approved
■ TTL Compatible Inputs and Outputs
• 32 pin Ceramic DIP (Package 300)
• 32 lead Ceramic SOJ (Package 101)
• 32 lead Ceramic Flat Pack (Package 206)
■ MIL-STD-883 Compliant Devices Available
REVOLUTIONARY PINOUT
EVOLUTIONARY PINOUT
32 DIP
32 CSOJ (DE)
32 FLATPACK (FE)
32 CSOJ (DR)
TOP VIEW
TOP VIEW
A0
A1
1
32 A16
31 A15
30 A14
29 A13
28 OE
27 I/O8
26 I/O7
25 GND
NC
A16
A14
A12
A7
1
32
VCC
2
2
31 A15
30 NC/CS2*
29 WE
28 A13
27 A8
A2
3
3
A3
4
4
CS
5
5
I/O1
I/O2
6
A6
6
7
A5
7
26 A9
VCC
8
A4
8
25 A11
24 OE
23 A10
22 CS
GND
I/O3
I/O4
WE
A4
9
24
VCC
A3
9
10
11
12
13
14
15
16
23 I/O6
22 I/O5
21 A12
20 A11
19 A10
18 A9
A2
10
11
12
13
14
15
16
A1
A0
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
I/O0
I/O1
I/O2
GND
A5
A6
A7
17 A8
* NC for single chip select devices
CS2 for dual chip select devices
PIN DESCRIPTION
A0-16
I/O 0-7
CS
Address Inputs
DataInput/Output
ChipSelect
OutputEnable
WriteEnable
+5.0VPower
Ground
OE
WE
VCC
GND
February 2000 Rev. 2
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS128K8-XXX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
TA
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
Unit
°C
°C
V
CS
H
L
OE
X
L
WE
X
Mode
Standby
Read
DataI/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
OperatingT emperatur e
StorageT emperatur e
SignalV oltageRelativetoGND
JunctionT emperatur e
SupplyV oltage
H
TSTG
VG
L
H
X
H
Out Disable
Write
Active
L
L
Active
TJ
°C
V
VCC
-0.5
7.0
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
VCC
Min
4.5
Max
5.5
Unit
V
SupplyV oltage
InputHighV oltage
InputLowV oltage
VIH
2.2
-0.5
VCC +0.3
+0.8
V
VIL
V
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Condition
Package
Speed (ns)
Max
Unit
Inputcapacitance
CIN
VIN =0V,f=1.0MHz
32PinCSOJ, DIP,
70 to 120
1 2
pF
FlatPackEvolutionary
32PinCSOJ Revolutionary
70 to 120
70 to 120
20
pF
pF
Outputcapicitance
COUT
VOUT =0V,f=1.0MHz
32PinCSOJ, DIP,
1 2
FlatPackEvolutionary
32PinCSOJ Revolutionary
70 to 120
20
pF
Thisparameterisguaranteedbydesignbutnottested.
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter
Sym
Conditions
-70
-85
-100
-120
Units
Min
Max
Min
Max
Min
Max
Min
Max
InputLeakageCurrent
OutputLeakageCurrent
OperatingSupplyCurrent
StandbyCurrent
ILI
ILO
VCC =5.5,V IN =GNDtoV CC
10
10
10
10
µA
µA
mA
mA
V
CS=V IH,OE=V IH,VOUT =GNDtoV CC
CS =V IL, OE=V IH, f=5MHz, Vcc =5.5
CS=V IH, OE=V IH, f=5MHz, Vcc=5.5
IOL =2.1mA, Vcc =4.5
10
30
10
30
10
30
10
30
ICC
ISB
VOL
VOH
1.0
0.4
1.0
0.4
0.6
0.4
0.6
0.4
OutputLowVoltage
OutputHighVoltage
IOH = -1.0mA, Vcc = 4.5
2.4
2.4
2.4
2.4
V
NOTE:DCtestconditions:V IH =V CC -0.3V,V IL=0.3V
DATA RETENTION CHARACTERISTICS
(TA = -55°C to +125°C)
Parameter
Symbol
Conditions
-70
-85
-100
-120
Units
Min
Typ
Max
5.5
400
Min
Typ
Max
5.5
400
Min
Typ
Max
5.5
400
Min
Typ
Max
DataRetention
SupplyVoltage
VDR
CS ≥ V CC -0.2V
2.0
2.0
2.0
2.0
5.5
400
V
DataRetention
Current
ICCDR1
VCC = 3 V
20
20
20
20
µA
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
2
WMS128K8-XXX
AC CHARACTERISTICS
(VCC = 5.0V, TA = -55°C To +125°C)
Parameter
Symbol
-70
-85
-100
-120
Units
ReadCycle
Min
Max
Min
Max
Min
Max
Min
Max
ReadCycleTime
tRC
tAA
70
85
100
120
ns
ns
ns
ns
ns
ns
ns
ns
ns
AddressAccessTime
70
85
100
120
OutputHoldfromAddressChange
ChipSelectAccess Time
tOH
3
3
3
3
tACS
tOE
70
35
85
45
100
50
120
60
OutputEnabletoOutputValid
ChipSelecttoOutputinLowZ
OutputEnabletoOutputinLowZ
ChipDisabletoOutputinHighZ
OutputDisabletoOutputinHighZ
tCLZ1
tOLZ1
tCHZ 1
tOHZ 1
5
5
5
5
5
5
5
5
25
25
25
25
35
35
35
35
1. This parameter is guaranteed bydesign but not tested.
AC CHARACTERISTICS
(VCC = 5.0V, TA = -55°C To +125°C)
Parameter
Symbol
-70
-85
-100
-120
Units
Write Cycle
Min
70
60
60
30
50
0
Max
Min
85
7 5
7 5
35
55
0
Max
Min
100
80
80
40
70
0
Max
Min
120
100
100
50
Max
WriteCycleTime
tWC
tCW
tAW
tDW
tWP
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ChipSelecttoEndofWrite
Address ValidtoEndofWrite
DataValidtoEndofWrite
WritePulseWidth
80
AddressSetupTime
AddressHoldTime
tAS
0
tAH
5
5
5
5
OutputActivefromEndofWrite
Write Enable to Output in High Z
DataHoldTime
tOW 1
tWHZ 1
tDH
5
5
5
5
25
30
35
35
0
0
0
0
1. This parameter is guaranteed bydesign but not tested.
AC TEST CIRCUIT
AC TEST CONDITIONS
IOL
Parameter
Typ
Unit
V
Current Source
InputPulseLevels
VIL=0, V IH =3.0
InputRiseandFall
5
ns
V
InputandOutputReferenceLevel
OutputTimingReferenceLevel
1.5
1.5
VZ
≈
1.5V
D.U.T.
V
(Bipolar Supply)
Ceff = 50 pf
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
IOH
Current Source
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS128K8-XXX
TIMING WAVEFORM - READ CYCLE
tRC
ADDRESS
CS
tAA
tRC
tCHZ
tACS
tCLZ
ADDRESS
tAA
OE
tOE
tOLZ
tOH
tOHZ
DATA I/O
DATA I/O
PREVIOUS DATA VALID
DATA VALID
DATA VALID
HIGH IMPEDANCE
READ CYCLE 1 (CS = OE = V , WE = V
IL IH
)
READ CYCLE 2 (WE = V )
IH
WRITE CYCLE - WE CONTROLLED
tWC
ADDRESS
tAW
tAH
tCW
CS
WE
tAS
tWP
tOW
tDH
tWHZ
tDW
DATA I/O
DATA VALID
WRITE CYCLE 1, WE CONTROLLED
WRITE CYCLE - CS CONTROLLED
tWC
ADDRESS
WS32K32-XHX
tAW
tAH
tAS
tCW
CS
tWP
WE
tDW
tDH
DATA I/O
DATA VALID
WRITE CYCLE 2, CS CONTROLLED
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
4
WMS128K8-XXX
PACKAGE 101: 32 LEAD, CERAMIC SOJ
21.1 (0.830) ± 0.25 (0.010)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
0.2 (0.008)
± 0.05 (0.002)
11.23 (0.442)
± 0.30 (0.012)
9.55 (0.376) ± 0.25 (0.010)
1.27 (0.050) ± 0.25 (0.010)
PIN 1 IDENTIFIER
1.27 (0.050) TYP
19.1 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 206: 32 LEAD, CERAMIC FLAT PACK
20.83 (0.820)
± 0.25 (0.010)
PIN 1
IDENTIFIER
3.18 (0.125) MAX
10.41 (0.410)
± 0.13 (0.005)
7.87 (0.310)
± 0.13 (0.005)
6.35 (0.250)
MIN
0.43 (0.017)
± 0.05 (0.002)
1.27 (0.050) TYP
19.05 (0.750) TYP
0.127 (0.005)
+ 0.05 (0.002)
– 0.025 (0.001)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS128K8-XXX
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.8 (1.686) MAX
5.13 (0.202) MAX
3.2 (0.125) MIN
PIN 1 IDENTIFIER
0.25 (0.010)
± 0.05 (0.002)
0.99 (0.039)
± 0.51 (0.020)
15.25 (0.600)
2.5 (0.100)
TYP
1.27 (0.050)
± 0.1 (0.005)
0.46 (0.018)
± 0.05 (0.002)
± 0.25 (0.010)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
6
WMS128K8-XXX
DATA RETENTION CHARACTERISTICS
(TA = -55°C to +125°C)
LOW POWER VERSION ONLY
Parameter
Symbol
Conditions
Units
Max
Min
DataRetentionSupplyVoltage
DataRetentionCurrent
VDR
CS ≥ V CC -0.2V
2.0
5.5
400
V
ICCDR3
VCC = 2V
µ
ORDERING INFORMATION
W M S 128K 8 X - XXX X X X X
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
SPECIAL PROCESSING:
E = Epitaxial Layer
DEVICE GRADE:
M= Military Screened
I = Industrial
-55°C to +125°C
-40°C to +85°C
0°C to +70°C
C = Commercial
PACKAGE:
C = 32 Pin Ceramic .600" DIP (Package 300)
DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary
DR = 32 Lead Ceramic SOJ (Package 101) Revolutionary
FE = 32 Lead Ceramic Flat Pack (Package 206)
ACCESS TIME (ns)
IMPROVEMENT MARK
C = Dual Chip Select Device
L = Low Power for 2V Data Retention
ORGANIZATION, 128K x 8
SRAM
MONOLITHIC
WHITE MICROELECTRONICS
7
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS128K8-XXX
DEVICE TYPE
SPEED
PACKAGE
SMD NO.
128Kx8SRAMMonolithic
128Kx8SRAMMonolithic
128Kx8SRAMMonolithic
128Kx8SRAMMonolithic
120ns
100ns
85ns
32leadSOJ Revol(DR)
32 leadSOJ Revol(DR)
32 leadSOJ Revol(DR)
32 leadSOJ Revol(DR)
5962-9669101HUX*
5962-9669102HUX*
5962-9669103HUX*
5962-9669104HUX*
70ns
128Kx8SRAMMonolithic
128Kx8SRAMMonolithic
128Kx8SRAMMonolithic
128Kx8SRAMMonolithic
120ns
100ns
85ns
32 lead SOJ Evol(DE)
32 lead SOJ Evol(DE)
32 lead SOJ Evol(DE)
32 lead SOJ Evol(DE)
5962-9669101HTX*
5962-9669102HTX*
5962-9669103HTX*
5962-9669104HTX*
70ns
128Kx8SRAMMonolithic
128Kx8SRAMMonolithic
128Kx8SRAMMonolithic
128Kx8SRAMMonolithic
120ns
100ns
85ns
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
5962-9669101HYX*
5962-9669102HYX*
5962-9669103HYX*
5962-9669104HYX*
70ns
128Kx8SRAMMonolithic
128Kx8SRAMMonolithic
128Kx8SRAMMonolithic
128Kx8SRAMMonolithic
120ns
100ns
85ns
36leadFlatpack(F)
36leadFlatpack(F)
36leadFlatpack(F)
36leadFlatpack(F)
5962-9669101HXX*
5962-9669102HXX*
5962-9669103HXX*
5962-9669104HXX*
70ns
* Pending
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
8
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