EDI8F81027LP55B6C [WEDC]

SRAM Module, 1MX8, 55ns, CMOS, DIP-32;
EDI8F81027LP55B6C
型号: EDI8F81027LP55B6C
厂家: WHITE ELECTRONIC DESIGNS CORPORATION    WHITE ELECTRONIC DESIGNS CORPORATION
描述:

SRAM Module, 1MX8, 55ns, CMOS, DIP-32

输入元件 静态存储器 输出元件 内存集成电路
文件: 总6页 (文件大小:359K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
EDI8F81027C  
White Electronic Designs  
1Mx8 CMOS SRAM MONOLITHIC  
DESCRIPTION  
FEATURES  
The EDI8F81027C is an 8Mb CMOS Static RAM based on two  
512Kx8 Static RAMs mounted on a multi-layered epoxy laminate  
(FR4) substrate.  
n 1 Mx8 bit CMOS Static RAM  
• Access Times 55 through 100ns  
• Data Retention Function (EDI8F81027LP )  
• TTL Compatible Inputs and Outputs  
• Fully Static, No Clocks  
A low power version with data retention (EDI8F81027LP) is also  
available.  
All inputs and outputs are TTL compatible and operate from a  
single 5V supply.  
n High Density Packaging  
Fully asynchronous, the EDI8F81027C requires no clocks or  
refreshing for operation.  
• 32 Pin DIP, No. 352  
n Single +5V (±10%) Supply Operation  
*This product is subject to change without notice.  
PIN CONFIGURATIONS AND BLOCK DIAGRAM  
PIN NAMES  
AØ-A19  
E#  
W#  
Address Inputs  
Chip Enable  
Write Enable  
V
CC  
1
2
3
4
5
6
7
8
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A18  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
DQØ-DQ7  
VCC  
VSS  
Common Data Input/Output  
Power (+5V±10%)  
Ground  
A15  
A17  
W#  
A13  
A8  
NC  
No Connection  
A9  
A11  
A19  
A10  
E#  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
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9
10  
11  
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A0 12  
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13  
14  
15  
16  
DQ0  
DQ1  
DQ2  
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V
SS  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
July 2002  
Rev. 3A  
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
EDI8F81027C  
White Electronic Designs  
RECOMMENDED DC OPERATING CONDITIONS  
ABSOLUTE MAXIMUM RATINGS*  
Voltage on any pin relative to VSS  
Operating Temperature TA (Ambient)  
Commercial  
-0.5V to 7.0V  
Parameter  
Sym  
VCC  
VSS  
VIH  
Min  
4.5  
0
Typ  
5.0  
0
Max  
5.5  
0
Units  
Supply Voltage  
Supply Voltage  
Input High Voltage  
Input Low Voltage  
V
V
V
V
0°C to +70°C  
-40°C to +85°C  
-55°C to +125°C  
1 Watt  
Industrial  
2.2  
-0.3  
6.0  
0.8  
Storage Temperature  
Power Dissipation  
Output Current  
VIL  
20 mA  
*Stress greater than those listed under "Absolute Maximum Ratings" may  
cause permanent damage to the device. This is a stress rating only and  
functional operation of the device at these or any other conditions greater  
than those indicated in the operational sections of this specification is not  
implied. Exposure to absolute maximum rating conditions for extended  
periods may affect reliability.  
AC TEST CONDITIONS  
Input Pulse Levels  
VSS to 3.0V  
5ns  
Input Rise and Fall Times  
Input and Output Timing Levels  
Output Load  
1.5V  
1TTL, CL = 100pF  
(note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF)  
DC ELECTRICAL CHARACTERISTICS  
Parameter  
Sym  
ICC1  
ICC2  
Conditions  
Min  
Typ*  
85  
Max  
140  
55  
Units  
mA  
Operating Power Supply Current  
Standby (TTL) Power Supply Current  
W#, E# = VIL, II/O = 0mA, Min Cycle  
25  
mA  
E# VIH, VIN VIL or VIN VIH  
C
LP  
1.5  
190  
2
300  
mA  
µA  
Full Standby Power Supply Current  
(CMOS)  
E# VCC-0.2V  
VIN VCC-0.2V or VIN 0.2V  
ICC3  
Input Leakage Current  
Output Leakage Current  
Output High Voltage  
ILI  
VIN = 0V to VCC  
V I/O = 0V to VCC  
IOH = -1.0mA  
-10  
-10  
2.4  
10  
10  
µA  
µA  
V
ILO  
VOH  
VOL  
Output Low Voltage  
IOL = 2.1mA  
0.4  
V
*Typical: TA = 25°C, VCC = 5.0V  
CAPACITANCE  
(f=1.0MHz, VIN=VCC or VSS)  
TRUTH TABLE  
G#  
E#  
W#  
Mode  
Output  
Power  
Parameter  
Sym  
CI  
Max  
Unit  
pF  
X
H
X
Standby  
HIGH Z  
ICC2/ICC3  
Address Lines  
Data Lines  
30  
43  
10  
32  
Output  
Deselect  
CD/Q  
CC  
pF  
H
L
H
HIGH Z  
ICC1  
Chip Enable Line  
pF  
L
L
L
H
L
Read  
Write  
DOUT  
DIN  
ICC1  
ICC1  
Write and Output Enable Lines  
CW  
pF  
X
These parameters are sampled, not 100% tested.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
July 2002  
Rev. 3A  
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
EDI8F81027C  
White Electronic Designs  
AC CHARACTERISTICS READ CYCLE  
Symbol  
JEDEC  
55ns  
70ns  
Min  
85ns  
100ns  
Parameter  
Alt.  
TRC  
TAA  
Min  
Max  
Max  
Min  
Max  
Min  
Max  
Units  
ns  
Read Cycle Time  
TAVAV  
TAVQV  
TELQV  
TELQX  
55  
70  
85  
100  
Address Access Time  
55  
55  
70  
70  
85  
85  
100  
100  
ns  
Chip Enable Access Time  
Chip Enable to Output in Low Z (1)  
Chip Disable to Output in High Z (1)  
Output Hold from Address Change  
Note 1: Parameter guaranteed, but not tested.  
TACS  
TCLZ  
ns  
5
5
5
5
5
5
5
5
ns  
TEHQZ TCHZ  
TAVQX TOH  
25  
30  
35  
40  
ns  
ns  
READ CYCLE 1 - W# HIGH, E# LOW  
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READ CYCLE 2 - W# HIGH  
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White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
July 2002  
Rev. 3A  
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
EDI8F81027C  
White Electronic Designs  
AC CHARACTERISTICS WRITE CYCLE  
Symbol  
JEDEC  
55ns  
70ns  
85ns  
100ns  
Parameter  
Alt.  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Units  
Write Cycle Time  
TAVAV  
TWC  
55  
70  
85  
100  
ns  
Chip Enable to End of Write  
Address Setup Time  
Address Valid to End of Write  
Write Pulse Width  
TELWH  
TELEH  
TCW  
TCW  
50  
50  
65  
65  
70  
70  
80  
80  
ns  
ns  
TAVWL  
TAVEL  
TAS  
TAS  
0
0
0
0
0
0
0
0
ns  
ns  
TAVWH  
TAVEH  
TAW  
TAW  
50  
50  
65  
65  
70  
70  
80  
80  
ns  
ns  
TWLWH  
TWLEH  
TWP  
TWP  
45  
45  
65  
65  
70  
70  
80  
80  
ns  
ns  
Write Recovery Time  
Data Hold Time  
TWHAX  
TEHAX  
TWR  
TWR  
5
5
5
5
5
5
5
5
ns  
ns  
TWHDX  
TEHDX  
TDH  
TDH  
0
0
0
0
0
0
0
0
ns  
ns  
Write to Output in High Z (1)  
Data to Write Time  
TWLQZ  
TWHZ  
25  
0
30  
0
35  
0
40  
ns  
TDVWH  
TDVEH  
TDW  
TDW  
25  
25  
30  
30  
35  
35  
40  
40  
ns  
ns  
Output Active from End of Write (1)  
TWHQX  
TWLZ  
5
5
5
5
ns  
Note 1: Parameter guaranteed, but not tested.  
WRITE CYCLE 1 - W# CONTROLLED  
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ꢅꢀ  
ꢂꢁꢃꢅꢄ  
ꢂꢌꢃꢅꢆ  
ꢌꢁꢂꢁꢊꢃꢁꢄꢈꢌ  
ꢂꢅꢆꢍꢇ  
ꢂꢅꢄꢍꢋ  
ꢆꢈꢉꢆꢊꢋ  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
July 2002  
Rev. 3A  
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
EDI8F81027C  
White Electronic Designs  
WRITE CYCLE 2 E# CONTROLLED  
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ꢀꢂꢄꢌꢊ  
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DATA RETENTION CHARACTERISTICS (LP VERSION ONLY)  
Characteristic  
Sym  
Test Conditions  
VCC  
Min  
Typ  
Max  
Unit  
70°C 85°C  
Data Retention Voltage  
VCC  
2
100  
160  
130  
210  
V
Data Retention Quiescent Current  
ICCDR  
2V  
3V  
µA  
µA  
ns  
E# VCC -0.2V  
VIN VCC -0.2V  
or VIN 0.2V  
0
Chip Disable to Data Retention Time  
Operation Recovery Time  
TCDR(1)  
TR (1)  
TAVAV*  
ns  
Note: Parameter guaranteed, but not tested  
* Read Cycle Time  
DATA RETENTION - E# CONTROLLED  
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ꢀꢀ  
ꢀꢀ  
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ꢁꢂ  
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ꢆꢋ  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
July 2002  
Rev. 3A  
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
EDI8F81027C  
White Electronic Designs  
ORDERING INFORMATION  
Standard Power  
Low Power  
with Data Retention  
Speed  
(ns)  
Package  
No.  
EDI8F81027C55B6C  
EDI8F81027C70B6C  
EDI8F81027C85B6C  
EDI8F81027C100B6C  
EDI8F81027LP55B6C  
EDI8F81027LP70B6C  
EDI8F81027LP85B6C  
EDI8F81027LP100B6C  
55  
70  
352  
352  
352  
352  
85  
100  
Note: To order an Industrial grade product substitute the letter C in the Suffix with the letter I,  
e.g. EDI8F81027C70B6C becomes EDI8F81027C70B6I.  
PACKAGE DESCRIPTION  
PACKAGE NO. 352: 32 PIN DIP  
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ALL DIMENSIONS ARE IN INCHES  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
July 2002  
Rev. 3A  
6
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  

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