概述
数据手册W3DG6334V7D2 概述
256MB - 2x16Mx64 SDRAM UNBUFFERED 256MB - 2x16Mx64 SDRAM UNBUFFERED
W3DG6334V7D2 数据手册
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PDF下载W3DG6434V-D2
White Electronic Designs
256MB – 2x16Mx64 SDRAM UNBUFFERED
FEATURES
DESCRIPTION
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PC100 and PC133 compatible
The W3DG6434V is a 2x16Mx64 synchronous DRAM
module which consists of sixteen 16Mx8 SDRAM
components in TSOP II package and one 2K EEPROM
in an 8 pin TSSOP package for Serial Presence Detect
which are mounted on a 168 pin DIMM multilayer FR4
Substrate.
Burst Mode Operation
Auto and Self Refresh capability
LVTTL compatible inputs and outputs
Serial Presence Detect with EEPROM
Fully synchronous: All signals are registered on the positive
edge of the system clock
* This product is subject to change without notice.
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Programmable Burst Lengths: 1, 2, 4, 8 or Full Page
3.3V ± ±0.3V Power Supply
168 pin DIMM JEDEC
NOTE: Consult factory for availability of:
• Lead-Free or RoHS Products
• Vendor source control options
• Industrial temperature option
PIN NAMES
Address input (Multiplexed)
Select Bank
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)
A0 – A11
BA0-1
DQ0-63
CK0-CK3
PIN
1
2
3
4
5
6
7
8
FRONT
VSS
PIN
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
FRONT
DQM1
CS0#
DNU
VSS
PIN
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
FRONT
DQ18
DQ19
VCC
PIN
85
BACK
VSS
PIN
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
BACK
DQM5
CS1#
RAS#
VSS
PIN
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
BACK
DQ50
DQ51
VCC
Data Input/Output
Clock input
CKE0,CKE1 Clock Enable input
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
DQ8
VSS
86
87
88
89
90
91
92
93
DQ32
DQ33
DQ34
DQ35
VCC
DQ36
DQ37
DQ38
DQ39
DQ40
VSS
DQ20
NC
*VREF
CKE1
VSS
DQ21
DQ22
DQ23
VSS
DQ52
NC
*VREF
DNU
VSS
DQ53
DQ54
DQ55
VSS
CS0#-CS3#
RAS#
CAS#
WE#
DQM0-7#
VCC
VSS
SDA
SCL
DNU
Chip select Input
Row Address Strobe
Column Address Strobe
Write Enable
DQM
Power Supply (3.3V)
Ground
Serial data I/O
Serial clock
A0
A2
A4
A6
A1
A3
A5
A7
A9
BA0
A11
9
A8
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
A10/AP
BA1
VCC
94
95
96
VCC
DQ9
DQ10
DQ11
DQ12
DQ13
VCC
DQ14
DQ15
*CB0
*CB1
VSS
NC
NC
VCC
WE#
DQM0
VCC
CK0
VSS
DNU
CS2#
DQM2
DQM3
DNU
VCC
DQ24
DQ25
DQ26
DQ27
VCC
DQ28
DQ29
DQ30
DQ31
VSS
CK2
NC
WP***
**SDA
**SCL
VCC
97
98
99
DQ41
DQ42
DQ43
DQ44
DQ45
VCC
DQ46
DQ47
*CB4
*CB5
VSS
NC
NC
VCC
CAS#
DQM4
CK1
*A12
VSS
CKE0
CS3#
DQM6
DQM7
*A13
VCC
DQ56
DQ57
DQ58
DQ59
VCC
DQ60
DQ61
DQ62
DQ63
VSS
Do not use
No Connect
Write Protect
NC
WP
100
101
102
103
104
105
106
107
108
109
110
111
112
* These pins are not used in this module.
** These pins should be NC in the system
which does not support SPD.
*** WP available on the W3DG6334V-D2.
NC
NC
NC
NC
CK3
*CB2
*CB3
VSS
DQ16
DQ17
*CB6
*CB7
VSS
DQ48
DQ49
NC
**SA0
**SA1
**SA2
VCC
July 2004
Rev 1
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3DG6434V-D2
White Electronic Designs
FUNCTIONAL BLOCK DIAGRAM
CS1#
CSO#
DQM4
DQM0
DQM
DQM
DQM
DQM
CS#
cs#
CS#
CS#
CS#
CS#
CS#
CS#
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM1
DQM5
DQM
DQM
DQM
DQM
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CS3#
CS2#
DQM2
DQM6
DQM
DQM
CS#
CS#
CS#
CS#
DQM
DQM
CS#
CS#
CS#
CS#
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM3
DQM7
DQM
DQM
DQM
DQM
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
SCL
SDA
WP
A0 A1 A2
V
CC
A0 ~ A12, BA0 & 1
RAS#
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
SA0 SA1 SA2
10KΩ
CAS#
WE#
CKE1
SDRAM
CKE0
10Ω
DQn
Every DQpin of SDRAM
V
CC
Two 0.1uF Capacitors
per each SDRAM
To all SDRAMs
V
SS
July 2004
Rev 1
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3DG6434V-D2
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
Voltage on VCC supply relative to VSS
Storage Temperature
VIN, VOUT
VCC, VCCQ
TSTG
PD
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
16
V
V
°C
W
Power Dissipation
Short Circuit Current
IOS
50
mA
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
Voltage Referenced to: VSS = 0V, 0°C ≤ TA ≤ +70°C
Parameter
Symbol
VCC
VIH
Min
3.0
2.0
-0.3
2.4
—
Typ
3.3
3.0
—
—
—
Max
Unit
V
V
V
V
Note
Supply Voltage
Input High Voltage
Input Low Voltage
3.6
VCCQ+0.3
0.8
—
0.4
1
2
VIL
Output High Voltage
Output Low Voltage
Input Leakage Current
VOH
VOL
ILI
IOH= -2mA
IOL= -2mA
3
V
µA
-10
—
10
Note:
1.
V
IH (max)= 5.6V AC. The overshoot voltage duration is ≤ 3ns.
IL (min)= -2.0V AC. The undershoot voltage duration is ≤ 3ns.
2.
V
3.
Any input 0V ≤ VIN ≤ VCC
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
TA = 25°C, f = 1MHz, VCC = 3.3V, VREF=1.4V ± ±200mV
Parameter
Symbol
CIN1
Max
65
65
35
16
20
11
Unit
pF
pF
pF
pF
pF
pF
pF
pF
Input Capacitance (A0-A12)
Input Capacitance (RAS#,CAS#,WE#)
Input Capacitance (CKE0-CKE1)
Input Capacitance (CLK0-CLK3)
Input Capacitance (CS0#-CS3#)
Input Capacitance (DQM0-DQM7)
Input Capacitance (BA0-BA1)
CIN2
CIN3
CIN4
CIN5
CIN6
CIN7
65
15
Data input/output capacitance (DQ0-DQ63)
COUT
July 2004
Rev 1
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3DG6434V-D2
White Electronic Designs
OPERATING CURRENT CHARACTERISTICS
VCC = 3.3V, 0°C ≤ TA ≤ 70°C
Parameters
Symbol
Conditions
Versions
Units
Note
133
100
Operating Current
(One bank active)
ICC1
1440
1440
mA
1
Burst Length = 1
RC ≥ tRC(min)
IOL = 0mA
t
ICC2P
ICC2PS
ICC2N
32
32
mA
mA
mA
Precharge Standby Current
in Power Down Mode
CKE ≤ VIL(max), tCC = 10ns
CKE & CK ≤ VIL(max), tCC = ∞
Precharge Standby Current
in Non-Power Down Mode
320
CKE ≥ VIH(min), CS ≥ VIH(min), tCC =10ns
Input signals are charged one time during 20
160
mA
mA
ICC2NS
CKE ≥ VIH(min), CK ≤ VIL(max), tCC= ∞
Input signals are stable
ICC3P
80
80
Active standby current in power-
down mode
CKE ≥ VIL(max), tCC = 10ns
ICC3PS
CKE & CK ≤ VIL(max), tCC = ∞
Active standby in current non
power-down mode
ICC3N
480
mA
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are charged one time during 20ns
ICC3NS
ICC4
400
mA
mA
CKE ≥ VIH(min), CK ≤ VIL(max), tCC = ∞
input signals are stable
1760
3200
1760
3200
1
2
Operating current (Burst mode)
Io = mA
Page burst
4 Banks activated
tCCD = 2CK
Refresh current
ICC5
ICC6
mA
mA
tRC ≥ tRC(min)
CKE ≤ 0.2V
Self refresh current
32
Notes:
1.
2.
Measured with outputs open.
Refresh period is 64ms.
July 2004
Rev 1
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3DG6434V-D2
White Electronic Designs
ORDERING INFORMATION
Part Number
Speed
100MHz
133MHz
133MHz
CAS Latency
CL=2
Height*
Part Number
Speed
100MHz
133MHz
133MHz
CAS Latency
CL=2
Height*
W3DG6434V10D2
W3DG6434V7D2
W3DG6434V75D2
30.48 (1.20")
30.48 (1.20")
30.48 (1.20")
W3DG6334V10D2
W3DG6334V7D2
W3DG6334V75D2
30.48 (1.20")
30.48 (1.20")
30.48 (1.20")
CL=2
CL=3
CL=2
CL=3
Note: Available with "WP" Write Protect on pin 81.
NOTES:
• Consult Factory for availability of Lead-Free or RoHS products. (F = Lead-Free, G = RoHS Compliant)
• Vendor specific part numbers are used to provide memory components source control. The place holder for this is shown as lower case “x” in the part numbers above and is to
be replaced with the respective vendors code. Consult factory for qualified sourcing options. (M = Micron, S = Samsung & consult factory for others)
• Consult factory for availability of industrial temperature (-40°C to 85°C) option
PACKAGE DIMENSIONS
133.48
3.81
(5.255 MAX.)
(0.150)
3.18
MAX.
(0.125) (2X)
3.99
(0.157)
(2X)
30.48
(1.200)
MAX.
17.78
(0.700)
P1
36.83
11.43
54.61
3.99
(1.450)
(0.450)
(2.150)
(0.157 MIN.)
6.35
(0.250)
42.16
(1.660)
8.89
6.35
(0.350)
(0.250)
1.27
115.57
(4.550)
(0.050 0.004)
ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES)
July 2004
Rev 1
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3DG6434V-D2
White Electronic Designs
Document Title
256MB - 2x16Mx64 SDRAM UNBUFFERED
Revision History
Rev #
History
Release Date Status
Rev A
Rev B
Rev C
Rev D
Rev 0
Rev 1
Created
12-18-01
2-13-01
4-10-02
5-21-02
8-19-02
7-2004
Advanced
Advanced
Advanced
Advanced
Final
Added "part number" to order table on page 6
Added "WP" write protect to pin 81
Corrected mechanical drawing
Changed from Advanced to Final
1.1 Updated CAP & IDD specs
1.2 Removed "ED" from part number
1.3 Added new title page
Final
July 2004
Rev 1
6
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3DG6334V7D2 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| W3DG6335V10D2 | WEDC | 256MB - 32Mx64 SDRAM UNBUFFERED | 获取价格 |
|
| W3DG6335V75D2 | WEDC | 256MB - 32Mx64 SDRAM UNBUFFERED | 获取价格 |
|
| W3DG6335V7D2 | WEDC | 256MB - 32Mx64 SDRAM UNBUFFERED | 获取价格 |
|
| W3DG634V10D2 | WEDC | 32MB - 4M x 64 SDRAM UNBUFFERED | 获取价格 |
|
| W3DG634V75D2 | WEDC | 32MB - 4M x 64 SDRAM UNBUFFERED | 获取价格 |
|
| W3DG634V7D2 | WEDC | 32MB - 4M x 64 SDRAM UNBUFFERED | 获取价格 |
|
| W3DG6363V10D2-G | MICROSEMI | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | 获取价格 |
|
| W3DG6363V10D2-GG | WEDC | Synchronous DRAM Module, 64MX64, 6ns, CMOS, ROHS COMPLIANT, DIMM-168 | 获取价格 |
|
| W3DG6363V10D2-GG | MICROSEMI | Synchronous DRAM Module, 64MX64, 6ns, CMOS, ROHS COMPLIANT, DIMM-168 | 获取价格 |
|
| W3DG6363V10D2-MG | WEDC | Synchronous DRAM Module, 64MX64, 6ns, CMOS, ROHS COMPLIANT, DIMM-168 | 获取价格 |
|
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