WE128K32-200G2UI [WEDC]
EEPROM Module, 128KX32, 200ns, Parallel, CMOS, CQFP68, 22.40 MM, CERAMIC, LQFP-68;
| 型号： | WE128K32-200G2UI |
| 厂家： | 
WHITE ELECTRONIC DESIGNS CORPORATION |
| 描述： | EEPROM Module, 128KX32, 200ns, Parallel, CMOS, CQFP68, 22.40 MM, CERAMIC, LQFP-68 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 |
| 文件： | 总16页 (文件大小：347K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WE128K32-XXX
White Electronic Designs
128Kx32 EEPROM MODULE, SMD 5962-94585
FEATURES
■ Access Times of 120*, 140, 150, 200, 250, 300ns
■ Low Power CMOS
■ Automatic Page Write Operation
■ Page Write Cycle Time: 10ms Max
■ Data Polling for End of Write Detection
■ Hardware and Software Data Protection
■ TTL Compatible Inputs and Outputs
■ 5 Volt Power Supply
■ Packaging:
• 66-pin, PGA Type, 27.3mm (1.075") square,
Hermetic Ceramic HIP (Package 400)
• 68 lead, 22.4mm sq. CQFP (G2U), 4.57mm
(0.180") high, (Package 509)
• 68 lead, 23.9mm sq. Low Profile CQFP (G1U)1,
3.57mm (0.140") high, (Package 519)
■ Built-in Decoupling Caps and Multiple Ground
Pins for Low Noise Operation
• 68 lead, 23.9mm sq. Low Profile CQFP (G1T),
4.06mm (0.160") high, (Package 524)
■ Weight
WE128K32-XG2UX - 8 grams typical
WE128K32-XG1UX - 5 grams typical
■ Organized as 128Kx32; User Configurable as
256Kx16 or 512Kx8
WE128K32-XG1TX1 - 5 grams typical
WE128K32-XH1X - 13 grams typical
■ Write Endurance 10,000 Cycles
■ Data Retention Ten Years Minimum (at +25°C)
*
120ns not available for SMD product
■ Commercial, Industrial and Military Temperature
Note 1: Package Not Recommended For New Design
Ranges
FIG. 1 PIN CONFIGURATION FOR WE128K32N-XH1X
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
TOP VIEW
A0-16
WE1-4
CS1-4
OE
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
VCC
GND
NC
Ground
Not Connected
BLOCK DIAGRAM
May 2003 Rev. 7
1
WhiteElectronicDesignsCorporation•(602)437-1520•www.whiteedc.com
WE128K32-XXX
White Electronic Designs
FIG. 3 PIN CONFIGURATION FOR WE128K32-XG2UX, WE128K32-XG1UX1 AND WE128K32-XG1TX
TOP VIEW
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-16
WE1-4
CS1-4
OE
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
VCC
GND
NC
Ground
The White 68 lead CQFP
fills the same fit and
Not Connected
function as the JEDEC 68
lead CQFJ or 68 PLCC. But
it has the TCE and lead
inspection advantage of the
CQFP form.
BLOCK DIAGRAM
Note 1: Package Not Recommended For New Design
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
2
WE128K32-XXX
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
WE Mode
Parameter
Symbol
TA
Unit
°C
°C
V
CS
H
L
L
X
OE
X
L
H
H
X
Data I/O
High Z
Data Out
X
H
L
Standby
Read
Write
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Voltage on OE and A9
NOTE:
-55 to +125
-65 to +150
-0.6 to +6.25
-0.6 to +13.5
TSTG
VG
Data In
High Z/Data Out
X
H
X
Out Disable
Write
Inhibit
V
X
X
L
Stresses above those listed under "Absolute Maximum Ratings"
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any
other conditions above those indicated
in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
COE
Conditions
Max Unit
device reliability.
OE capacitance
V
V
IN = 0 V, f = 1.0 MHz 50 pF
WE1-4 capacitance
HIP (PGA)
CQFP G2U/G1U/G1T
CWE
IN = 0 V, f = 1.0 MHz
pF
RECOMMENDED OPERATING CONDITIONS
20
20
Parameter
Symbol
VCC
VIH
Min
4.5
2.0
-0.5
-55
-40
Max
5.5
Unit
V
Supply Voltage
CS1-4 capacitance
CCS
CI/O
V
IN = 0 V, f = 1.0 MHz 20 pF
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
VCC + 0.3
+0.8
V
Data I/O capacitance
V
I/O = 0 V, f = 1.0 MHz 20 pF
IN = 0 V, f = 1.0 MHz 50 pF
VIL
V
Address input capacitance CAD
V
TA
+125
°C
°C
This parameter is guaranteed by design but not tested.
TA
+85
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Symbol
Conditions
VCC = 5.5, VIN = GND to VCC
CS = VIH, OE = VIH, VOUT = GND to VCC
CS = VIL, OE = VIH, f = 5MHz
CS = VIH, OE = VIH, f = 5MHz
IOL = 2.1mA, VCC = 4.5V
Min
Max
10
Unit
µA
µA
mA
mA
V
Input Leakage Current
Output Leakage Current
ILI
ILOx32
10
Operating Supply Current x 32 Mode ICCx32
250
2.5
Standby Current
ISB
VOL
VOH
Output Low Voltage
Output High Voltage
0.45
IOH = -400µA, VCC = 4.5V
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
FIG. 4 AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
ns
V
Input Rise and Fall
5
Input and Output Reference Level
Output Timing Reference Level
1.5
1.5
V
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75Ω .
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load
circuit.
ATE tester includes jig capacitance.
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WE128K32-XXX
White Electronic Designs
AC WRITE CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C)
WRITE
A write cycle is initiated when OE is high and a low
pulse is on WE or CS with CS or WE low. The
address is latched on the falling edge of CS or WE
whichever occurs last. The data is latched by the
rising edge of CS or WE, whichever occurs first. A
byte write operation will automatically continue to
completion.
WriteCycleParameter
WriteCycleTime, TYP=6ms
AddressSet-upTime
WritePulseWidth(WEorCS)
ChipSelectSet-upTime
AddressHoldTime
Symbol Min
Max Unit
tWC
10
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAS
tWP
tCS
0
150
0
tAH
100
10
0
DataHoldTime
tDH
ChipSelectHoldTime
DataSet-upTime
tCSH
tDS
WRITE CYCLE TIMING
100
10
10
50
OutputEnableSet-upTime
OutputEnableHoldTime
Write Pulse Width High
tOES
tOEH
tWPH
Figures 5 and 6 show the write cycle timing relation-
ships. A write cycle begins with address application,
write enable and chip select. Chip select is accom-
plished by placing the CS line low. Write enable
consists of setting the WE line low. The write cycle
begins when the last of either CS or WE goes low.
The WE line transition from high to low also initiates
an internal 150 µsec delay timer to permit page mode
operation. Each subsequent WE transition from high
to low that occurs before the completion of the 150
µsec time out will restart the timer from zero. The
operation of the timer is the same as a retriggerable
one-shot.
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
4
WE128K32-XXX
White Electronic Designs
FIG. 5
WRITE WAVEFORMS
WE CONTROLLED
FIG. 6
WRITE WAVEFORMS
CS CONTROLLED
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WE128K32-XXX
White Electronic Designs
READ
The WE128K32-XXX stores data at the memory
location determined by the address pins. When CS
and OE are low and WE is high, this data is
present on the outputs. When CS and OE are
high, the outputs are in a high impedance state.
This two line control prevents bus contention.
AC READ CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C)
ReadCycleParameter
Symbol
-120
-140
-150
-200
-250
-300
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min Max
Min Max
ReadCycleTime
tRC
tACC
tACS
tOH
tOE
120
140
150
200
250
250
250
0
300
300
300
0
ns
ns
ns
ns
ns
ns
AddressAccessTime
120
120
140
140
150
150
200
200
ChipSelectAccessTime
OutputHoldfromAdd.Change,OEorCS
OutputEnabletoOutputValid
ChipSelectorOEtoHighZOutput
0
0
0
0
0
0
0
0
50
70
55
70
55
70
55
70
0
85
70
0
85
70
tDF
FIG. 7
READ WAVEFORMS
CS1-4
NOTES:
OE may be delayed up to tACS - tOE after
the falling edge of CS without impact on
tOE or by tACC - tOE after an address
change without impact on tACC.
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
6
WE128K32-XXX
White Electronic Designs
DATA POLLING
The WE128K32-XXX offers a data polling feature
which allows a faster method of writing to the device.
Figure 8 shows the timing diagram for this function.
During a byte or page write cycle, an attempted read
of the last byte written will result in the complement of
the written data on D7 (for each chip.) Once the write
cycle has been completed, true data is valid on all
outputs and the next cycle may begin. Data polling
may begin at any time during the write cycle.
DATA POLLING CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA= -55°C TO +125°C)
Parameter
Symbol
Min Max Unit
DataHoldTime
OEHoldTime
tDH
10
10
ns
ns
ns
ns
tOEH
tOE
OEToOutputValid
WriteRecoveryTime
55
tWR
0
FIG. 8
DATA POLLING
WAVEFORMS
7
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WE128K32-XXX
White Electronic Designs
PAGE WRITE CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C)
PAGE WRITE OPERATION
The WE128K32-XXX has a page write operation that
allows one to 128 bytes of data to be written into the
device and consecutively loads during the internal
programming period. Successive bytes may be
loaded in the same manner after the first data byte
has been loaded. An internal timer begins a time out
operation at each write cycle. If another write cycle is
completed within 150µs or less, a new time out period
begins. Each write cycle restarts the delay period.
The write cycles can be continued as long as the
interval is less than the time out period.
PageModeWriteCharacteristics
Parameter
Symbol
Unit
Min Max
WriteCycleTime,TYP=6ms
AddressSet-upTime
AddressHoldTime(1)
DataSet-upTime
tWC
tAS
10
ms
ns
ns
ns
ns
ns
µs
ns
0
tAH
100
100
10
tDS
DataHoldTime
tDH
WritePulseWidth
tWP
tBLC
tWPH
150
150
50
ByteLoadCycleTime
WritePulseWidthHigh
The usual procedure is to increment the least
significant address lines from A0 through A6 at
each write cycle. In this manner a page of up to
128 bytes can be loaded in to the EEPROM in a
burst mode before beginning the relatively long
interval programming cycle.
1. Page address must remain valid for duration of write cycle.
After the 150µs time out is completed, the EEPROM
begins an internal write cycle. During this cycle the
entire page of bytes will be written at the same
time. The internal programming cycle is the same
regardless of the number of bytes accessed.
FIG. 9
PAGE MODE
WRITE WAVEFORMS
x
x
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
8
WE128K32-XXX
White Electronic Designs
FIG. 10
SOFTWARE DATA PROTECTION
ENABLEALGORITHM(1)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA A0
WRITES ENABLED(2)
TO
ADDRESS 5555
LOAD DATA XX
TO
ANY ADDRESS(4)
LOAD LAST BYTE
ENTER DATA
TO
PROTECT STATE
LAST ADDRESS
NOTES:
1. Data Format: D7 - D0 (Hex);
Address Format: A16 - A0 (Hex).
2. Write Protect state will be activated at end of write even if
no other data is loaded.
3. Write Protect state will be deactivated at end of write
period even if no other data is loaded.
4. 1 to 128 bytes of data may be loaded.
9
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WE128K32-XXX
White Electronic Designs
SOFTWARE DATA PROTECTION
FIG. 11
A software write protection feature may be enabled
or disabled by the user. When shipped by White
Microelectronics, the WE-128K32-XXX has the
feature disabled. Write access to the device is
unrestricted.
SOFTWARE DATA PROTECTION
DISABLEALGORITHM(1)
To enable software write protection, the user writes
three access code bytes to three special internal
locations. Once write protection has been enabled,
each write to the EEPROM must use the same
three byte write sequence to permit writing. After
setting software data protection, any attempt to
write to the device without the three-byte command
sequence will start the internal write timers. No data
will be written to the device, however, for the
duration of tWC. The write protection feature can be
disabled by a six byte write sequence of specific
data to specific locations. Power transitions will not
reset the software write protection.
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 80
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
Each 128K byte block of the EEPROM has indepen-
dent write protection. One or more blocks may be
enabled and the rest disabled in any combination.
The software write protection guards against
inadvertent writes during power transitions, or
unauthorized modification using a PROM program-
mer.
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 20
TO
(3)
ADDRESS 5555
EXIT DATA
PROTECT STATE
LOAD DATA XX
TO
HARDWARE DATA PROTECTION
These features protect against inadvertent writes to
the WE128K32-XXX. These are included to
improve reliability during normal operation:
ANY ADDRESS(4)
LOAD LAST BYTE
TO
LAST ADDRESS
a) VCC power on delay
As VCC climbs past 3.8V typical the device will
wait 5msec typical before allowing write cycles.
b) VCC sense
While below 3.8V typical write cycles are inhib-
ited.
c) Write inhibiting
Holding OE low and either CS or WE high
inhibits write cycles.
d) Noise filter
Pulses of <8ns (typ) on WE or CS will not initiate
a write cycle.
NOTES:
1. Data Format: D7 - D0 (Hex);
Address Format: A16 - A0 (Hex).
2. Write Protect state will be activated at end of write even if
no other data is loaded.
3. Write Protect state will be deactivated at end of write
period even if no other data is loaded.
4. 1 to 128 bytes of data may be loaded.
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
10
WE128K32-XXX
White Electronic Designs
PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
11
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WE128K32-XXX
White Electronic Designs
PACKAGE 510: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2U)
25.15 (0.990) 0.25 (0.010) ꢀS
3.51 (0.140) MAX
22.36 (0.ꢁꢁ0) 0.25 (0.010) ꢀS
0.25 (0.010) 0.010 (0.002)
24.0 (0.946)
0.25 (0.010)
0.53 (0.021)
0.1ꢁ (0.00ꢂ)
1.01 (0.040)
0.13 (0.005)
23.ꢁꢂ
0.940 REF
The White 68 lead G2U
CQFP fills the same fit
and function as the
JEDEC 68 lead CQFJ or
68 PLCC. But the G2U
has the TCE and lead
inspection advantage of
the CQFP form.
0.940"
TYP
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
12
WE128K32-XXX
White Electronic Designs
PACKAGE 519: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1U)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Note 1: Package Not Recommended for New Designs
13
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WE128K32-XXX
White Electronic Designs
PACKAGE 524: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1T)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
14
WE128K32-XXX
White Electronic Designs
FIG. 12 ALTERNATE PIN CONFIGURATION FOR WE128K32NP-XH1X
PIN DESCRIPTION
TOP VIEW
I/O0-31 Data Inputs/Outputs
A0-16
WE1-4
CS1-4
OE
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
VCC
GND
NC
Not Connected
BLOCK DIAGRAM
ORDERING INFORMATION
W E 128K32 X - XXX X X X
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
Q = Compliant
M = Military Screened -55°C to +125°C
I
= Industrial
-40°C to +85°C
0°C to +70°C
C = Commercial
PACKAGE TYPE:
H1 = 1.075" sq. Ceramic Hex In-line Package, HIP (Package 400*)
G2U = 22.4mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 510)
G1U1 = 23.9mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 519)
G1T = 23.9mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 524)
ACCESS TIME (ns)
IMPROVEMENT MARK
N = No Connect at pins 8, 21, 28, and 39 in HIP for upgrade
P = Alternate Pin Configuration for HIP package
ORGANIZATION 128K x 32
User Configurable as 256K x 16 or 512K x 8
EEPROM
WHITE ELECTRONIC DESIGNS CORP.
Note1:PackageNotRecommendedForNewDesign
15
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WE128K32-XXX
White Electronic Designs
DEVICETYPE
SPEED
PACKAGE
SMDNO.
128K x 32 EEPROM Module
128K x 32 EEPROM Module
128K x 32 EEPROM Module
128K x 32 EEPROM Module
128K x 32 EEPROM Module
300ns
250ns
200ns
150ns
140ns
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
5962-94585 01H5X
5962-94585 02H5X
5962-94585 03H5X
5962-94585 04H5X
5962-94585 05H5X
128Kx32EEPROMModule
128Kx32EEPROMModule
300ns
250ns
66 pinHIP(H1,Ptypepinout)
66 pinHIP(H1,Ptypepinout)
5962-9458501H6X
5962-9458502H6X
128Kx32EEPROMModule
128Kx32EEPROMModule
128Kx32EEPROMModule
200ns
150ns
140ns
66 pinHIP(H1,Ptypepinout)
66 pinHIP(H1,Ptypepinout)
66 pinHIP(H1,Ptypepinout)
5962-9458503H6X
5962-9458504H6X
5962-9458505H6X
128K x 32 EEPROM Module
128K x 32 EEPROM Module
128K x 32 EEPROM Module
128K x 32 EEPROM Module
128K x 32 EEPROM Module
300ns
250ns
200ns
150ns
140ns
68 lead CQFP/J (G2U)1
68 lead CQFP/J (G2U)1
68 lead CQFP/J (G2U)1
68 lead CQFP/J (G2U)1
68 lead CQFP/J (G2U)1
5962-94585 01HMX
5962-94585 02HMX
5962-94585 03HMX
5962-94585 04HMX
5962-94585 05HMX
128Kx32EEPROMModule
128Kx32EEPROMModule
128Kx32EEPROMModule
128Kx32EEPROMModule
128Kx32EEPROMModule
300ns
250ns
200ns
150ns
140ns
68leadCQFP(G1U)
68leadCQFP(G1U)
68leadCQFP(G1U)
68leadCQFP(G1U)
68leadCQFP(G1U)
5962-9458501H9X
5962-9458502H9X
5962-9458503H9X
5962-9458504H9X
5962-9458505H9X
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
16
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