WF2M16W-120FLC5 [WEDC]
Flash Module, 2MX16, 120ns, CDFP44, CERAMIC, DFP-44;
| 型号： | WF2M16W-120FLC5 |
| 厂家： | 
WHITE ELECTRONIC DESIGNS CORPORATION |
| 描述： | Flash Module, 2MX16, 120ns, CDFP44, CERAMIC, DFP-44 CD |
| 文件： | 总12页 (文件大小：416K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WF2M16-XXX5
White Electronic Designs
PRELIMINARY*
2Mx16 Flash MODULE, SMD 5962-97610
FEATURES
Access Times of 90, 120, 150ns
Packaging:
Low Power CMOS
Data# Polling and Toggle Bit feature for detection of
program or erase cycle completion.
Supports reading or programming data to a sector
not being erased.
Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation.
RESET# pin resets internal state machine to the
read mode.
Ready/Busy (RY#/BY#) output for detection of
program or erase cycle completion.
•
56 lead, Hermetic Ceramic, 0.520" CSOP
(Package 207).
Fits standard 56 SSOP footprint.
•
•
44 pin Ceramic SOJ (Package 102)**
44 lead Ceramic Flatpack (Package 208)**
Sector Architecture
•
•
32 equal size sectors of 64KBytes each
Any combination of sectors can be erased.
Also supports full chip erase.
Multiple Ground Pins for Low Noise Operation
Minimum 100,000 Write/Erase Cycles Minimum
Organized as 2Mx16; User Configurable as 2 x 2Mx8
Commercial, Industrial, and Military Temperature
Ranges
* This product is under development, is not qualified or characterized and is subject to
change without notice.
** Package to be developed.
5 Volt Read and Write. 5V ± 10% Supply.
Note: For programming information refer to Flash Programming 16M5 Application Notes.
FIGURE 1 – PIN CONFIGURATIONS
WF2M16-XDAX5
56 CSOP
WF2M16-XXX5
44 CSOJ (DL)**
44 FLATPACK (FL)**
PIN DESCRIPTION
I/O0-15
A0-20
Data Inputs/Outputs
Address Inputs
Write Enable
Chip Select
Output Enable
Power Supply
Ground
TOP VIEW
TOP VIEW
WE#
CS1#
A12
A13
A14
A15
NC
CS2#
NC
A20
A19
A18
A17
A16
VCC
GND
I/O6
I/O14
I/O7
I/O15
RY/BY#
OE#
WE#
NC
I/O13
I/O5
I/O12
I/O4
VCC
1
2
3
4
5
6
7
8
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
CS1#
A12
A13
A14
A15
NC
CS2#
NC
A20
A19
A18
A17
A16
VCC
GND
I/O6
I/O14
I/O7
I/O15
RY/BY#
OE#
WE#
NC
I/O13
I/O5
I/O12
I/O4
VCC
1
2
3
4
5
6
7
8
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
NC
NC
CS1-2
#
#RESET
A11
A10
A9
A1
A2
A3
A4
A5
A6
A7
GND
A8
VCC
I/O9
I/O1
#RESET
A11
A10
A9
A1
A2
A3
A4
A5
A6
A7
GND
A8
VCC
I/O9
I/O1
OE#
VCC
VSS
RY/BY#
RESET#
Ready/Busy
Reset
9
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
BLOCK DIAGRAM
I/O0-7
I/O8-1
RESET#
39 I/O8
38 I/O0
37 A0
36 NC
35 NC
34 NC
33 I/O2
32
31
30
29
39 I/O8
38 I/O0
37 A0
36 NC
35 NC
34 NC
33 I/O2
32
31
30
29
WE#
OE#
0-20
A
RY/BY#
I/O10
I/O3
I/O11
GND
I/O10
I/O3
I/O11
GND
2M x 8
2M x 8
CS1#
CS2#
** Package to be developed.
NOTE:
1. RY/BY# is an open drain output and should be pulled up to Vcc with an external resistor.
2. Address compatible with Intel 2M8 56 SSOP.
April 2004
Rev. 5
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WF2M16-XXX5
White Electronic Designs
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
(TA = +25°C)
Parameter
Voltage on Any Pin Relative to VSS
Power Dissipation
Symbol
VT
Ratings
-2.0 to +7.0
8
Unit
V
Parameter
Symbol
Conditions
Max Unit
OE# capacitance
WE# capacitance
CS# capacitance
Data I/O capacitance
Address input capacitance
COE VIN = 0V, f = 1.0 MHz 25
CWE VIN = 0V, f = 1.0 MHz 25
CCS VIN = 0V, f = 1.0 MHz 15
CI/O VI/O = 0V, f = 1.0 MHz 15
CAD VIN = 0V, f = 1.0 MHz 25
pF
pF
pF
pF
pF
PT
W
Storage Temperature
TSTG
IOS
-65 to +125
100
°C
Short Circuit Output Current
Data Retention (Mil Temp)
Endurance — write/erase cycles
mA
years
20
(Mil Temp) 100,000 min. cycles
This parameter is guaranteed by design but not tested.
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Symbol
VCC
VSS
VIH
Min
4.5
0
Typ
5.0
0
Max
5.5
Unit
V
Supply Voltage
Ground
0
V
Input High Voltage
Input Low Voltage
Operating Temperature (Mil.)
Operating Temperature (Ind.)
2.0
-0.5
-55
-40
–
VCC + 0.5
+0.8
V
VIL
–
V
TA
–
+125°C
+85
°C
°C
TA
–
DC CHARACTERISTICS - CMOS COMPATIBLE
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
ILI
Conditions
Min
Max
10
Unit
Input Leakage Current
VCC = 5.5, VIN = GND to VCC
VCC = 5.5, VIN = GND to VCC
CS# = VIL, OE# = VIH, f = 5MHz
CS# = VIL, OE# = VIH
μA
μA
mA
mA
mA
Output Leakage Current
VCC Active Current for Read (1)
VCC Active Current for Program or Erase (2)
ILO
10
ICC1
ICC2
ICC3
80
120
4.0
V
CC Standby Current
VCC = 5.5, CS# = VIH,
f = 5MHz, RESET# = VCC ± 0.3V
Output Low Voltage
VOL
VOH
VLKO
IOL = 12.0 mA, VCC = 4.5
IOH = -2.5 mA, VCC = 4.5
0.45
4.2
V
V
V
Output High Voltage
Low VCC Lock-Out Voltage
0.85xVCC
3.2
NOTES:
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions VIL = 0.3V, VIH = VCC - 0.3V
1. The Icc current listed includes both the DC operating current and the frequency
dependent component (@ 5MHz). The frequency component typically is less than
2mA/MHz, with OE# at VIH.
April 2004
Rev. 5
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WF2M16-XXX5
White Electronic Designs
PRELIMINARY
AC Characteristics – Write/Erase/Program Operations - WE# Controlled
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
tAVAV
-90
-120
-150
Unit
Min
90
0
Max
Min
120
0
Max
Min
150
0
Max
Write Cycle Time
tWC
tCS
tWP
tAS
ns
ns
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
tELWL
tWLWH
tAVWL
tDVWH
tWHDX
tWLAX
tWHWL
tWHWH1
tWHWH2
tGH
45
0
50
0
50
0
ns
ns
Data Setup Time
tDS
45
0
50
0
50
0
ns
Data Hold Time
tDH
tAH
ns
Address Hold Time
45
20
50
20
50
20
ns
Write Enable Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase (2)
tWPH
ns
300
15
300
15
300
15
μs
sec
μs
μs
sec
sec
ns
Read Recovery Time before Write
VCC Setup Time
0
0
0
WL
tVCS
50
50
50
Chip Programming Time
Chip Erase Time (3)
44
44
44
256
256
256
Output Enable Hold Time (4)
RESET# Pulse Width
tOEH
tRP
10
10
10
500
500
500
ns
NOTES:
1. Typical value for tWHWH1 is 7μs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
AC CHARACTERISTICS – READ-ONLY OPERATIONS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
Unit
-90
-120
-150
Min
Max
Min
Max
Min
Max
Read Cycle Time
TAVAV
TAVQV
TELQV
TGLQV
TEHQZ
TGHQZ
TAXQX
TRC
TACC
TCE
TOE
TDF
TDF
TOH
90
120
150
ns
ns
ns
ns
ns
ns
ns
Address Access Time
90
90
40
20
20
120
120
50
150
150
55
Chip Select Access Time
Output Enable to Output Valid
Chip Select High to Output High Z (1)
Output Enable High to Output High Z (1)
30
35
30
35
Output Hold from Addresses, CS# or OE# Change,
whichever is First
0
0
0
RESET# Low to Read Mode (1)
TREADY
20
20
20
μs
1. Guaranteed by design, not tested.
April 2004
Rev. 5
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WF2M16-XXX5
White Electronic Designs
PRELIMINARY
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS# CONTROLLED
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
-90
-120
-150
Unit
Min
90
0
Max
Min
120
0
Max
Min
150
0
Max
Write Cycle Time
tAVAV
tWLEL
tELEH
tAVEL
tDVEH
tEHDX
tELAX
tEHEL
tWC
tWS
tCP
ns
ns
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
45
0
50
0
50
0
ns
tAS
ns
Data Setup Time
tDS
45
0
50
0
50
0
ns
Data Hold Time
tDH
tAH
ns
Address Hold Time
45
20
50
20
50
20
ns
Chip Select Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time
tCPH
ns
tWHWH1
tWHWH2
tGHEL
300
15
300
15
300
15
μs
sec
μs
sec
sec
ns
0
0
0
Chip Programming Time
Chip Erase Time (3)
44
44
44
256
256
256
Output Enable Hold Time (4)
tOEH
10
10
10
NOTES:
1. Typical value for tWHWH1 is 7μs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
FIGURE 2 – AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
IOL
Input Pulse Levels
VIL = 0, VIH = 3.0
V
ns
V
Current Source
Input Rise and Fall
5
Input and Output Reference Level
Output Timing Reference Level
1.5
1.5
V
D.U.T.
V
Z
1.5V
(Bipolar Supply)
Notes:
CEFF = 50 pf
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 ý.
VZ is typically the midpoint of VOH and VOL
IOL & IOH are adjusted to simulate a typical resistive load circuit.ATE
tester includes jig capacitance.
.
IOH
Current Source
FIGURE 3 – RESET TIMING DIAGRAM
RESET#
tRP
tReady
April 2004
Rev. 5
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WF2M16-XXX5
White Electronic Designs
PRELIMINARY
FIGURE 3 – AC WAVEFORMS FOR READ OPERATIONS
April 2004
Rev. 5
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WF2M16-XXX5
White Electronic Designs
PRELIMINARY
FIGURE 4 – WRITE/ERASE/PROGRAM OPERATION, WE# CONTROLLED
NOTES:
1. PA is the address of the memory location to
be programmed.
2. PD is the data to be programmed at byte
address.
3. D7# is the output of the complement of the
data written to the device.
4. DOUT is the output of the data written to the
device.
5. Figure indicates last two bus cycles of four
bus cycle sequence.
April 2004
Rev. 5
6
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WF2M16-XXX5
White Electronic Designs
PRELIMINARY
FIGURE 5 – AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS
NOTE:
1. SA is the sector address for Sector Erase.
April 2004
Rev. 5
7
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WF2M16-XXX5
White Electronic Designs
PRELIMINARY
FIG. 6 – AC WAVEFORMS FOR DATA# POLLING DURING EMBEDDED ALGORITHM OPERATIONS
April 2004
Rev. 5
8
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WF2M16-XXX5
White Electronic Designs
PRELIMINARY
FIGURE 7 – ALTERNATE CS# CONTROLLED PROGRAMMING OPERATION TIMINGS
NOTES:
1. PA represents the address of the memory location to be programmed.
2. PD represents the data to be programmed at byte address.
3. D7# is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates the last two bus cycles of a four bus cycle sequence.
April 2004
Rev. 5
9
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WF2M16-XXX5
White Electronic Designs
PRELIMINARY
PACKAGE 102: 44 LEAD, CERAMIC SOJ**
28.70 (1.13) 0.25 (0.010)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
0.2 (0.008)
0.05 (0.002)
11.3 (0.446)
0.2 (0.009)
9.55 (0.376) 0.25 (0.010)
1.27 (0.050) 0.25 (0.010)
1.27 (0.050) TYP
26.7 (1.050) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
** Package to be developed.
PACKAGE 208: 44 LEAD, CERAMIC FLAT PACK**
28.45 (1.120)
0.26 (0.010)
PIN 1
3.18 (0.125)
MAX
IDENTIFIER
12.95 (0.510)
0.13 (0.005)
9.90 (0.390)
0.13 (0.005)
12.70 (0.500)
0.51 (0.020)
5.08 (0.200)
0.25 (0.010)
0.43 (0.017)
0.05 (0.002)
1.27 (0.050) TYP
0.13 (0.005)
0.05 (0.002)
3.81 (0.150)
TYP
26.67 (1.050) TYP
32.64 (1.285) TYP
43.17 (1.699) 0.39 (0.015)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
** Package to be developed.
April 2004
Rev. 5
10
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WF2M16-XXX5
White Electronic Designs
PRELIMINARY
PACKAGE 207: 56 LEAD, CERAMIC SOP*
23.63 (0.930) 0.25 (0.010)
21.59 (0.850) TYP
0.18 (0.007)
0.03 (0.001)
3.43 (0.120)
0.38 (0.015)
0.51 (0.020)
0.13 (0.005)
a
12.96 (0.510)
0.15 (0.006)
16.13 (0.635)
0.13 (0.005)
0.51 (0.020)
0.13 (0.005)
+
1.60 (0.063) TYP
PIN 1
0.51
(0.020)
TYP
0.25 (0.010)
0.05 (0.002)
0.80 (0.031) TYP
IDENTIFIER
0 / -4
SEE DETAIL "A"
3.57 (0.140)
0.51 (0.020)
DETAIL "A"
* Package Dimensions subject to change
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
FIGURE 8 – ALTERNATE PIN CONFIGURATION FOR WF2M16W-XDAX5
56 CSOP
BLOCK DIAGRAM
TOP VIEW
PIN DESCRIPTION
I/O0-7
I/O8-15
CS1#
A12
1
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
NC
I/O0-15
A0-21
Data Inputs/Outputs
Address Inputs
Write Enable
Chip Select
Output Enable
Power Supply
Ground
2
RESET#
A11
A10
A9
RESET#
WE#
A13
3
A14
4
OE#
A15
5
WE#
A
1-21
RY/BY#
NC
6
A1
CS1-2
#
CS2#
A21
7
A2
8
A3
OE#
A20
9
A4
A19
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
A5
2M x 8
2M x 8
VCC
A18
A6
A17
A7
VSS
A16
GND
A8
VCC
GND
I/O6
RY/BY#
RESET#
Ready/Busy
Reset
CS1#
CS2#
VCC
I/O9
I/O1
I/O8
I/O14
I/O7
I/O15
RY/BY#
OE#
WE#
NC
I/O13
I/O5
I/O12
I/O4
VCC
38 I/O0
37 NC
36 NC
35 NC
34 NC
33 I/O2
32 I/O10
31
30
29
NOTE:
1. RY/BY# is an open drain output and should be pulled
up toVcc with an external resistor.
I/O3
I/O11
GND
2. Address compatible with Intel 1M16 56 SSOP.
April 2004
Rev. 5
11
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WF2M16-XXX5
White Electronic Designs
PRELIMINARY
ORDERING INFORMATION
W F 2M16 X - XXX X X 5 X
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
VPP PROGRAMMING VOLTAGE
5 = 5V
DEVICE GRADE:
Q = Compliant
-55°C to +125°C
M = Military, 883 Screened
-55°C to +125°C
-40°C to +85°C
0°C to +70°C
I
= Industrial
C = Commercial
PACKAGE TYPE:
DA = 56 Lead CSOP (Package 207)
fits standard 56 SSOP footprint
DL = 44 Lead Ceramic SOJ (Package 102)*
FL = 44 Lead Ceramic Flatpack (Package 208)*
ACCESS TIME (ns)
IMPROVEMENT MARK:
• Address Pinout for 56 CSOP Package
W = Word Wide Applications
ORGANIZATION of 2M x 16
User configurable as 2 x 2M x 8
Flash
WHITE ELECTRONIC DESIGNS CORP.
* Package to be developed.
DEVICE TYPE SECTOR SIZESPEED PACKAGE
SMD NO.
2M x 16 Flash MCP
2M x 16 Flash MCP
2M x 16 Flash MCP
150ns
120ns
90ns
5962-97610 04HXX
5962-97610 05HXX
5962-97610 06HXX
April 2004
Rev. 5
12
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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