WMS128K8C-100DECA [WEDC]
SRAM,;
| 型号： | WMS128K8C-100DECA |
| 厂家： | 
WHITE ELECTRONIC DESIGNS CORPORATION |
| 描述： | SRAM, 静态存储器 |
| 文件： | 总8页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WMS128K8-XXX
HI-RELIABILITY PRODUCT
128Kx8 MONOLITHIC SRAM, SMD 5962-96691 (pending)
FEATURES
■ Access Times 70, 85, 100, 120ns
■ Commercial, Industrial and Military Temperature Range
■ 5 Volt Power Supply
■ Revolutionary, Center Power/Ground Pinout
JEDEC Approved
■ Low Power CMOS
• 32 lead Ceramic SOJ (Package 101)
■ 2V Data Retention Devices Available
■ Evolutionary, Corner Power/Ground Pinout
(Low Power Version)
JEDEC Approved
■ TTL Compatible Inputs and Outputs
• 32 pin Ceramic DIP (Package 300)
• 32 lead Ceramic SOJ (Package 101)
• 32 lead Ceramic Flat Pack (Package 206)
■ MIL-STD-883 Compliant Devices Available
REVOLUTIONARY PINOUT
EVOLUTIONARY PINOUT
32 DIP
32 CSOJ (DE)
32 FLATPACK (FE)
32 CSOJ (DR)
TOP VIEW
TOP VIEW
A0
A1
1
32 A16
31 A15
30 A14
29 A13
28 OE
27 I/O8
26 I/O7
25 GND
NC
A16
A14
A12
A7
1
32
VCC
2
2
31 A15
30 NC/CS2*
29 WE
28 A13
27 A8
A2
3
3
A3
4
4
CS
5
5
I/O1
I/O2
6
A6
6
7
A5
7
26 A9
VCC
8
A4
8
25 A11
24 OE
23 A10
22 CS
GND
I/O3
I/O4
WE
A4
9
24
VCC
A3
9
10
11
12
13
14
15
16
23 I/O6
22 I/O5
21 A12
20 A11
19 A10
18 A9
A2
10
11
12
13
14
15
16
A1
A0
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
I/O0
I/O1
I/O2
GND
A5
A6
A7
17 A8
* NC for single chip select devices
CS2 for dual chip select devices
PIN DESCRIPTION
A0-16
I/O0-7
CS
Address Inputs
Data Input/Output
Chip Select
OE
Output Enable
Write Enable
+5.0V Power
Ground
WE
VCC
GND
October 2000 Rev. 3
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS128K8-XXX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
TA
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
Unit
°C
°C
V
CS
H
L
L
L
OE
X
L
H
X
WE
X
H
H
L
Mode
Standby
Read
Out Disable
Write
Data I/O
High Z
Data Out
High Z
Power
Standby
Active
Active
Active
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
TSTG
VG
Data In
TJ
°C
V
VCC
-0.5
7.0
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
VCC
Min
4.5
Max
5.5
Unit
V
Supply Voltage
Input High Voltage
Input Low Voltage
VIH
2.2
VCC + 0.3
+0.8
V
VIL
-0.5
V
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Condition
IN = 0V, f = 1.0MHz
Package
Speed (ns)
Max
Unit
Input capacitance
CIN
V
32 Pin CSOJ, DIP,
70 to 120
12
pF
Flat Pack Evolutionary
32 Pin CSOJ Revolutionary
70 to 120
70 to 120
20
12
pF
pF
Output capicitance
COUT
V
OUT = 0V, f = 1.0MHz
32 Pin CSOJ, DIP,
Flat Pack Evolutionary
32 Pin CSOJ Revolutionary
70 to 120
20
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter
Sym
Conditions
-70
-85
-100
-120
Units
Min
Max
Min
Max
Min
Max
Min
Max
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
ILI
ILO
VCC = 5.5, VIN = GND to VCC
10
10
10
10
µA
µA
mA
mA
V
CS = VIH, OE = VIH, VOUT = GND to VCC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
IOL = 2.1mA, Vcc = 4.5
10
30
10
30
10
30
10
30
ICC
ISB
1.0
0.4
1.0
0.4
0.6
0.4
0.6
0.4
Output Low Voltage
Output High Voltage
VOL
VOH
IOH = -1.0mA, Vcc = 4.5
2.4
2.4
2.4
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS
(TA = -55°C to +125°C)
Parameter
Symbol
Conditions
-70
Typ
-85
Typ
-100
Typ
-120
Typ
Units
Min
Max
5.5
Min
Max
5.5
Min
Max
Min
Max
Data Retention
Supply Voltage
VDR
CS ≥ VCC -0.2V
2.0
2.0
2.0
5.5
2.0
5.5
V
Data Retention
Current
ICCDR1
VCC = 3V
20
400
20
400
20
400
20
400
µA
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
2
WMS128K8-XXX
AC CHARACTERISTICS
(VCC = 5.0V, TA = -55°C To +125°C)
Parameter
Read Cycle
Symbol
-70
-85
-100
-120
Units
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
tAA
70
85
100
120
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
70
85
100
120
Output Hold from Address Change
Chip Select Access Time
tOH
3
3
3
3
tACS
70
35
85
45
100
50
120
60
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
tOE
tCLZ1
tOLZ1
tCHZ1
tOHZ1
5
5
5
5
5
5
5
5
25
25
25
25
35
35
35
35
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(VCC = 5.0V, TA = -55°C To +125°C)
Parameter
Symbol
-70
-85
-100
-120
Units
Write Cycle
Min
70
60
60
30
50
0
Max
Min
85
75
75
35
55
0
Max
Min
100
80
80
40
70
0
Max
Min
120
100
100
50
80
0
Max
Write Cycle Time
tWC
tCW
tAW
tDW
tWP
tAS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
tAH
5
5
5
5
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
tOW1
tWHZ1
tDH
5
5
5
5
25
30
35
35
0
0
0
0
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
AC TEST CONDITIONS
IOL
Parameter
Typ
Unit
V
Current Source
Input Pulse Levels
VIL = 0, VIH = 3.0
Input Rise and Fall
5
ns
V
Input and Output Reference Level
Output Timing Reference Level
1.5
1.5
D.U.T.
VZ
≈
1.5V
V
(Bipolar Supply)
Ceff = 50 pf
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
IOH
Current Source
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS128K8-XXX
TIMING WAVEFORM - READ CYCLE
tRC
ADDRESS
CS
tAA
tRC
tCHZ
tACS
tCLZ
ADDRESS
tAA
OE
tOE
tOLZ
tOH
tOHZ
DATA I/O
DATA I/O
PREVIOUS DATA VALID
DATA VALID
DATA VALID
HIGH IMPEDANCE
READ CYCLE 1 (CS = OE = V , WE = V
)
READ CYCLE 2 (WE = V )
IH
IL IH
WRITE CYCLE - WE CONTROLLED
tWC
ADDRESS
tAW
tAH
tCW
CS
WE
tAS
tWP
tOW
tDH
tWHZ
tDW
DATA I/O
DATA VALID
WRITE CYCLE 1, WE CONTROLLED
WRITE CYCLE - CS CONTROLLED
tWC
ADDRESS
WS32K32-XHX
tCW
tAW
tAH
tAS
CS
tWP
WE
tDW
tDH
DATA I/O
DATA VALID
WRITE CYCLE 2, CS CONTROLLED
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
4
WMS128K8-XXX
PACKAGE 101: 32 LEAD, CERAMIC SOJ
21.1 (0.830) ± 0.25 (0.010)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
0.2 (0.008)
± 0.05 (0.002)
11.23 (0.442)
± 0.30 (0.012)
9.55 (0.376) ± 0.25 (0.010)
1.27 (0.050) ± 0.25 (0.010)
PIN 1 IDENTIFIER
1.27 (0.050) TYP
19.1 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 206: 32 LEAD, CERAMIC FLAT PACK
20.83 (0.820)
± 0.25 (0.010)
PIN 1
IDENTIFIER
3.18 (0.125) MAX
10.41 (0.410)
± 0.13 (0.005)
7.87 (0.310)
± 0.13 (0.005)
6.35 (0.250)
MIN
0.43 (0.017)
± 0.05 (0.002)
1.27 (0.050) TYP
19.05 (0.750) TYP
0.127 (0.005)
+ 0.05 (0.002)
– 0.025 (0.001)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS128K8-XXX
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.8 (1.686) MAX
5.13 (0.202) MAX
3.2 (0.125) MIN
PIN 1 IDENTIFIER
0.25 (0.010)
± 0.05 (0.002)
0.99 (0.039)
± 0.51 (0.020)
15.25 (0.600)
2.5 (0.100)
TYP
1.27 (0.050)
± 0.1 (0.005)
0.46 (0.018)
± 0.05 (0.002)
± 0.25 (0.010)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
6
WMS128K8-XXX
DATA RETENTION CHARACTERISTICS
(TA = -55°C to +125°C)
LOW POWER VERSION ONLY
Parameter
Symbol
Conditions
Units
Max
Min
Data Retention Supply Voltage
Data Retention Current
VDR
CS ≥ VCC -0.2V
2.0
5.5
V
ICCDR3
VCC = 2V
400
µ
ORDERING INFORMATION
W M S 128K 8 X - XXX X X X
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
M= Military Screened
I = Industrial
-55°C to +125°C
-40°C to +85°C
0°C to +70°C
C = Commercial
PACKAGE:
C = 32 Pin Ceramic .600" DIP (Package 300)
DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary
DR = 32 Lead Ceramic SOJ (Package 101) Revolutionary
FE = 32 Lead Ceramic Flat Pack (Package 206)
ACCESS TIME (ns)
IMPROVEMENT MARK
C = Dual Chip Select Device
L = Low Power for 2V Data Retention
ORGANIZATION, 128K x 8
SRAM
MONOLITHIC
WHITE MICROELECTRONICS
7
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS128K8-XXX
DEVICE TYPE
SPEED
PACKAGE
SMD NO.
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
120ns
100ns
85ns
32 lead SOJ Revol (DR)
32 lead SOJ Revol (DR)
32 lead SOJ Revol (DR)
32 lead SOJ Revol (DR)
5962-96691 01HUX
5962-96691 02HUX
5962-96691 03HUX
5962-96691 04HUX
70ns
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
120ns
100ns
85ns
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
5962-96691 01HTX
5962-96691 02HTX
5962-96691 03HTX
5962-96691 04HTX
70ns
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
120ns
100ns
85ns
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
5962-96691 01HYX
5962-96691 02HYX
5962-96691 03HYX
5962-96691 04HYX
70ns
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
8
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