WMS128K8L-17DEC [WEDC]
128Kx8 MONOLITHIC SRAM, SMD 5962-96691; 128Kx8单片SRAM ， SMD 5962-96691
| 型号： | WMS128K8L-17DEC |
| 厂家： | 
WHITE ELECTRONIC DESIGNS CORPORATION |
| 描述： | 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 |
| 文件： | 总8页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WMS128K8-XXX
White Electronic Designs
128Kx8 MONOLITHIC SRAM, SMD 5962-96691
FEATURES
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MIL-STD-883 Compliant Devices Available
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Access Times 70, 85, 100, 120ns
Commercial, Industrial and Military Temperature Range
5 Volt Power Supply
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Revolutionary, Center Power/Ground Pinout
JEDEC Approved
Low Power CMOS
• 32 lead Ceramic SOJ (Package 101)
2V Data Retention Devices Available
(Low Power Version)
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Evolutionary, Corner Power/Ground Pinout
JEDEC Approved
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TTL Compatible Inputs and Outputs
• 32 pin Ceramic DIP (Package 300)
• 32 lead Ceramic SOJ (Package 101)
• 32 lead Ceramic Flat Pack (Package 206)
REVOLUTIONARY PINOUT
32 CSOJ (DR)
EVOLUTIONARY PINOUT
32 DIP (C)
32 CSOJ (DE)
32 FLATPACK (FE)
TOP VIEW
TOP VIEW
PIN DESCRIPTION
A0-16
Address Inputs
I/O0-7
CS
Data Input/Output
Chip Select
OE
Output Enable
Write Enable
+5.0V Power
Ground
WE
VCC
GND
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
SEPTEMBER 2002 REV. 5
WMS128K8-XXX
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
Parameter
Symbol
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
Unit
°C
°C
V
CS
H
L
OE
X
WE
X
Mode
Data I/O
High Z
Power
Standby
Active
Active
Active
Standby
Read
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
TA
L
H
H
L
Data Out
High Z
TSTG
VG
L
H
X
Out Disable
Write
L
Data In
TJ
°C
V
VCC
-0.5
7.0
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
Input High Voltage
Input Low Voltage
VCC
4.5
5.5
V
V
V
VIH
2.2
VCC + 0.3
+0.8
VIL
-0.5
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Condition
Package
Max
12
Unit
pF
Inputcapacitance
CIN
V
IN = 0V, f = 1.0MHz
32PinCSOJ, DIP,
FlatPackEvolutionary
32PinCSOJRevolutionary
20
12
pF
pF
Outputcapicitance
COUT
V
OUT = 0V, f = 1.0MHz
32PinCSOJ, DIP,
FlatPackEvolutionary
32PinCSOJRevolutionary
20
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C)
Parameter
Sym
Conditions
-70
-85
-100
-120
Units
Min
Max
10
Min
Max
10
Min
Max
Min
Max
10
InputLeakageCurrent
OutputLeakageCurrent
OperatingSupplyCurrent
StandbyCurrent
ILI
ILO
ICC
ISB
VCC =5.5, VIN =GNDtoVCC
10
10
30
5
µA
µA
mA
mA
V
CS=VIH, OE=VIH,VOUT =GNDtoVCC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
CS=VIH, OE = VIH, f = 5MHz, Vcc = 5.5
IOL = 2.1mA, Vcc = 4.5
10
30
5
10
30
5
10
30
5
OutputLowVoltage
OutputHighVoltage
VOL
VOH
0.4
0.4
0.4
0.4
IOH = -1.0mA, Vcc = 4.5
2.4
2.4
2.4
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS
(TA= -55°C TO +125°C)
Parameter
Symbol
Conditions
-70
Min
-85
-100
-120
Units
Max
5.5
1
Min
2.0
Max
5.5
1
Min
Max
Min
Max
5.5
1
DataRetention
SupplyVoltage
VDR
CS ≥ VCC -0.2V
2.0
2.0
5.5
1
2.0
V
DataRetention
Current
ICCDR1
VCC = 3V
mA
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
2
WMS128K8-XXX
White Electronic Designs
AC CHARACTERISTICS
(VCC = 5.0V, TA= -55°C TO +125°C)
Parameter
Symbol
-70
-85
-100
-120
Units
Read Cycle
Min
70
Max
70
Min
85
Max
85
Min
Max
100
Min
Max
120
Read Cycle Time
tRC
tAA
100
120
ns
ns
ns
ns
ns
ns
ns
ns
ns
AddressAccessTime
OutputHoldfromAddressChange
Chip Select Access Time
tOH
3
3
3
3
tACS
tOE
70
35
85
45
100
50
120
60
OutputEnabletoOutputValid
ChipSelecttoOutputinLowZ
OutputEnabletoOutputinLowZ
ChipDisabletoOutputinHighZ
OutputDisabletoOutputinHighZ
tCLZ1
tOLZ1
tCHZ1
tOHZ1
3
0
3
0
3
0
3
0
25
25
25
25
35
35
35
35
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(VCC= 5.0V, TA= -55°C TO +125°C)
Parameter
Symbol
-70
-85
-100
-120
Units
Write Cycle
Min
70
60
60
30
50
0
Max
Min
85
75
75
35
55
0
Max
Min
100
80
80
40
70
0
Max
Min
120
100
100
50
80
0
Max
Write Cycle Time
tWC
tCW
tAW
tDW
tWP
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ChipSelecttoEndofWrite
AddressValidtoEndofWrite
DataValidtoEndofWrite
WritePulseWidth
AddressSetupTime
AddressHoldTime
tAS
tAH
5
5
5
5
OutputActivefromEndofWrite
Write Enable to Output in High Z
Data Hold Time
tOW1
tWHZ1
tDH
5
5
5
5
25
30
35
35
0
0
0
0
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
V
Input Pulse Levels
VIL = 0, VIH = 3.0
Input Rise and Fall
5
ns
InputandOutputReferenceLevel
Output Timing Reference Level
1.5
1.5
V
V
Notes:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOHare adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS128K8-XXX
White Electronic Designs
TIMING WAVEFORM - READ
CYCLE
tRC
ADDRESS
DATA I/O
tAA
tOH
PREVIOUS DATA VALID
DATA VALID
READ CYCLE 1 (CS = OE = V , WE = V
)
IL IH
WRITE CYCLE - WE CONTROLLED
tWC
ADDRESS
tAW
tAH
tCW
CS
tAS
tWP
WE
tOW
tDH
tWHZ
tDW
DATA I/O
DATA VALID
WRITE CYCLE 1, WE CONTROLLED
WRITE CYCLE - CS CONTROLLED
tWC
ADDRESS
WS32K32-XHX
tAH
tCW
tAW
tAS
CS
tWP
WE
tDW
tDH
DATA I/O
DATA VALID
WRITE CYCLE 2, CS CONTROLLED
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
4
WMS128K8-XXX
White Electronic Designs
PACKAGE 101: 32 LEAD, CERAMIC SOJ
21.1 (0.830) 0.25 (0.010)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
0.2 (0.008)
0.05 (0.002)
11.3 (0.446)
0.2 (0.009)
9.55 (0.376) 0.25 (0.010)
1.27 (0.050) 0.25 (0.010)
1.27 (0.050) TYP
19.1 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 206: 32 LEAD, CERAMIC FLAT PACK
20.83 (0.820)
0.25 (0.010)
PIN 1
IDENTIFIER
3.18 (0.125) MAX
10.41 (0.410)
0.13 (0.005)
7.87 (0.310)
0.13 (0.005)
6.35 (0.250)
MIN
0.43 (0.017)
0.05 (0.002)
1.27 (0.050) TYP
19.05 (0.750) TYP
0.127 (0.005)
+ 0.05 (0.002)
– 0.025 (0.001)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS128K8-XXX
White Electronic Designs
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.4 (1.670) 0.4 (0.016)
15.04 (0.592)
0.3 (0.012)
4.34 (0.171) 0.79 (0.031)
3.2 (0.125) MIN
0.25 (0.010)
0.05 (0.002)
0.84 (0.033)
0.4 (0.014)
15.25 (0.600)
0.25 (0.010)
2.5 (0.100)
TYP
1.27 (0.050)
0.1 (0.005)
0.46 (0.018)
0.05 (0.002)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
6
WMS128K8-XXX
White Electronic Designs
DATA RETENTION CHARACTERISTICS
(TA= -55°C TO +125°C)
LOW POWER VERSION ONLY
Parameter
Symbol
Conditions
Units
Min
Max
5.5
DataRetentionSupplyVoltage
DataRetentionCurrent
VDR
CS ≥ VCC -0.2V
2.0
V
ICCDR3
VCC = 2V
750
µA
ORDERING INFORMATION
W M S 128K 8 X - XXX X X X
LEAD FINISH:
Blank=Goldplatedleads
A = Solderdipleads
DEVICEGRADE:
M =MilitaryScreened
I = Industrial
-55°Cto+125°C
-40°Cto+85°C
0°Cto+70°C
C =Commercial
PACKAGE:
C = 32 Pin Ceramic .600" DIP (Package 300)
DE=32LeadCeramicSOJ(Package101)Evolutionary
DR=32LeadCeramicSOJ(Package101)Revolutionary
FE = 32 Lead Ceramic Flat Pack (Package 206)
ACCESS TIME (ns)
IMPROVEMENTMARK
L=LowPowerfor2VDataRetention
ORGANIZATION, 128K x 8
SRAM
MONOLITHIC
WHITEELECTRONICDESIGNSCORP.
7
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS128K8-XXX
White Electronic Designs
DEVICE TYPE
SPEED
PACKAGE
SMD NO.
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
120ns
100ns
85ns
32 lead SOJ Revol (DR)
32 lead SOJ Revol (DR)
32 lead SOJ Revol (DR)
32 lead SOJ Revol (DR)
5962-96691 01HUX
5962-96691 02HUX
5962-96691 03HUX
5962-96691 04HUX
70ns
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
120ns
100ns
85ns
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
5962-96691 01HTX
5962-96691 02HTX
5962-96691 03HTX
5962-96691 04HTX
70ns
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
120ns
100ns
85ns
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
5962-96691 01HYX
5962-96691 02HYX
5962-96691 03HYX
5962-96691 04HYX
70ns
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
120ns
100ns
85ns
32 pin Flatpack (FE)
32 pin Flatpack (FE)
32 pin Flatpack (FE)
32 pin Flatpack (FE)
5962-96691 01HNX
5962-96691 02HNX
5962-96691 03HNX
5962-96691 04HNX
70ns
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
8
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