WMS256K16-20DLCA [WEDC]
256Kx16 MONOLITHIC SRAM, SMD 5962-96902; 256Kx16单片SRAM , SMD 5962-96902型号: | WMS256K16-20DLCA |
厂家: | WHITE ELECTRONIC DESIGNS CORPORATION |
描述: | 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 |
文件: | 总7页 (文件大小:253K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
WMS256K16-XXX
White Electronic Designs
256Kx16 MONOLITHIC SRAM, SMD 5962-96902
PIN CONFIGURATION FOR WMS256K16-XXX
FEATURES
■
■
■
Access Times 17, 20, 25, 35ns
44 CSOJ
MIL-STD-883 Compliant Devices Available
Packaging
44 FlatpacK
TOP VIEW
• 44 pin Ceramic SOJ (Package 102)
• 44 lead Ceramic Flatpack (Package 225)
• 44 lead Formed Ceramic Flatpack
Organized as 256Kx16
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
A0
A1
A2
A3
A4
CS#
I/O1
I/O2
I/O3
I/O4
A17
A16
A15
■
■
OE#
UB#
LB#
Data Byte Control:
I/O16
I/O15
I/O14
I/O13
GND
• Lower Byte (LB#) = I/O1-8
• Upper Byte (UB#) = I/O9-16
9
10
11
12
13
14
15
16
17
18
19
20
21
22
■
■
2V Minimum Data Retention for battery back up
operation (WMS256K16L-XXX Low Power Version
Only)
VCC
GND
I/O5
I/O6
I/O7
I/O8
WE#
A5
A6
A7
A8
A9
VCC
I/O12
I/O11
I/O10
I/O9
NC
Commercial, Industrial and Military Temperature
Range
■
■
■
5V Power Supply
A14
A13
A12
A11
Low Power CMOS
TTL Compatible Inputs and Outputs
A10
PIN DESCRIPTION
A0-17
LB#
UB#
Address Inputs
Lower-Byte Control (I/O1-8
Upper-Byte Control (I/O9-16
)
)
I/O1-16 Data Input/Output
CS#
OE#
WE#
VCC
GND
NC
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
No Connection
August 2004
Rev. 6
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMS256K16-XXX
White Electronic Designs
TRUTH TABLE
Data I/O
Power
CS#
WE#
OE#
LB#
UB#
Mode
I/O1-8
I/O9-16
H
L
L
X
H
X
X
H
X
X
X
H
L
H
L
L
H
L
X
X
H
H
L
L
H
L
Not Select
Output Disable
High Z
High Z
Standby
Active
High Z
High Z
Data Out
High Z
Data Out
Data In
High Z
High Z
Data Out
Data Out
High Z
Data In
Data In
L
L
H
L
L
Read
Write
Active
Active
X
L
Data In
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
TA
TSTG
VG
TJ
VCC
Min
-55
-65
-0.5
Max
+125
+150
VCC+0.5
150
Unit
°C
°C
V
°C
V
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
VCC
VIH
VIL
TA
Min
4.5
2.2
-0.3
-55
Max
5.5
VCC + 0.3
+0.8
Unit
V
V
V
°C
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
+125
-0.5
7.0
CAPACITANCE
TA = +25°C
Parameter
Input capacitance
Output capacitance
Symbol
CIN
COUT
Condition
VIN = 0V, f = 1.0MHz
VOUT = 0V, f = 1.0MHz
Max Unit
20
20
pF
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
ILI
ILO
ICC
ISB
VOL
VOH
Conditions
VCC = 5.5, VIN = GND to VCC
CS# = VIH, OE# = VIH, VOUT = GND to VCC
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
IOL = 6mA, VCC = 4.5
Min
Max
10
10
275
17
0.4
Units
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
µA
µA
mA
mA
V
IOH = -4.0mA, VCC = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
LOW POWER DATA RETENTION CHARACTERISTICS (WMS256K16L-XXX ONLY)
-55°C ≤ TA ≤ +125°C
Parameter
Data Retention Supply Voltage
Data Retention Current
Symbol
Conditions
CS# ≥ VCC -0.2V
VCC = 3V
Min
2.0
Typ
Max
5.5
8.0
Units
V
mA
VDR
1
ICCDR
1.0
August 2004
Rev. 6
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMS256K16-XXX
White Electronic Designs
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
-17
-20
-25
-35
Parameter
Symbol
Units
Read Cycle
Min
17
Max
17
Min
20
Max
20
Min
25
Max
25
Min
35
Max
35
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
LB#, UB# Access Time
tRC
tAA
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tOH
tACS
tOE
0
0
0
0
17
10
20
12
25
15
35
20
1
tCLZ
2
0
5
0
5
0
5
0
1
tOLZ
1
tCHZ
9
9
10
10
10
12
12
12
14
15
15
17
1
tOHZ
tBA
1
LB#, UB# Enable to Low Z Output
LB#, UB# Disable to High Z Output
tBLZ
0
0
0
0
1
tBHZ
9
10
12
15
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
-17
-20
-25
-35
Symbol
Units
Min
17
14
14
10
14
0
Max
Min
20
17
17
12
17
0
Max
Min
25
20
20
15
20
0
Max
Min
35
25
25
20
25
0
Max
tWC
tCW
tAW
tDW
tWP
tAS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAH
2
0
2
0
2
0
2
0
1
tOW
1
tWHZ
9
10
10
15
tDH
tBW
0
14
0
17
0
20
0
25
LB#, UB# Valid to End of Write
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Typ
Unit
V
VIL = 0, VIH = 3.0
IOL
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
5
1.5
1.5
ns
V
V
Current Source
Notes:
D.U.T.
VZ
≈
(Bipolar Supply)
1.5V
Vz is programmable from -2V to +7V.
I
OL & IOH programmable from 0 to 16mA.
Ceff = 50 pf
Tester Impedance Z0 = 75 Ω.
Vz is typically the midpoint of VOH and VOL
I
.
OL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
IOH
Current Source
August 2004
Rev. 6
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMS256K16-XXX
White Electronic Designs
TIMING WAVEFORM - READ CYCLE
tRC
tRC
ADDRESS
CS#
ADDRESS
DATA I/O
tAA
tAA
tOH
tCHZ
tACS
PREVIOUS DATA VALID
DATA VALID
LB#, UB#
tBHZ
tBA
READ CYCLE 1 (CS# = OE# = VIL, UB# or LB# = VIL, WE# = VIH
)
tBLZ
tCLZ
OE#
tOE
tOHZ
tOLZ
DATA I/O
DATA VALID
HIGH IMPEDANCE
READ CYCLE 2 (WE# = VIH
)
WRITE CYCLE - WE# CONTROLLED
tWC
ADDRESS
tAW
tAH
tCW
CS#
tBW
LB#, UB#
tAS
tWP
WE#
tOW
tDH
tWHZ
tDW
DATA I/O
DATA VALID
WRITE CYCLE 1, WE# CONTROLLED
WRITE CYCLE - CS# CONTROLLED
WRITE CYCLE - LB#, UB# CONTROLLED
tWC
tWC
ADDRESS
ADDRESS
tAW
tAW
tAH
tAH
tAS
tAS
tCW
tCW
CS#
LB#, UB#
WE#
CS#
tBW
tBW
LB#, UB#
tWP
tWP
WE#
tDW
tDH
tDW
tDH
DATA I/O
DATA I/O
DATA VALID
DATA VALID
WRITE CYCLE 2, CS# CONTROLLED
WRITE CYCLE 3, LB#, UB# CONTROLLED
August 2004
Rev. 6
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMS256K16-XXX
White Electronic Designs
PACKAGE 102: 44 LEAD, CERAMIC SOJ
28.70 (1.13) 0.25 (0.010)
3.ꢀ6 (0.156) MAX
0.8ꢀ (0.035)
Radius TYP
0.2 (0.008)
0.05 (0.002)
11.3 (0.446)
0.2 (0.00ꢀ)
ꢀ.55 (0.376) 0.25 (0.010)
1.27 (0.050) 0.25 (0.010)
1.27 (0.050) TYP
26.7 (1.050) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 225: 44 LEAD, CERAMIC FLAT PACK
28.45 (1.120)
0.26 (0.010)
2.60 (0.102)
MAX
12.ꢀ5 (0.510)
0.13 (0.005)
10.16 (0.400)
0.51 (0.020)
0.43 (0.017)
0.05 (0.002)
1.27 (0.050) TYP
0.14 (0.006)
0.05 (0.002)
26.67 (1.050) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
August 2004
Rev. 6
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMS256K16-XXX
White Electronic Designs
PACKAGE 211: 44 LEAD FORMED, CERAMIC FLAT PACK
3.81 (0.150)
PIN 1
28.45 (1.120)
0.26 (0.010)
MAX
IDENTIFIER
1.52 (0.060) TYP
12.ꢀ5 (0.510)
0.13 (0.005)
16.76 (0.660)
0.13 (0.005)
0.43 (0.017)
0.05 (0.002)
1.27 (0.050) TYP
0.14 (0.006)
0.05 (0.002)
+
+
1.ꢀ0 (0.075) TYP
26.67 (1.050) TYP
0.46 (0.030) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
ORDERING INFORMATION
W M S 256K16 X - XXX X X X
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
M= Military Screened
I = Industrial
-55°C to +125°C
-40°C to +85°C
0°C to +70°C
C = Commercial
PACKAGE:
DL = 44 Lead Ceramic SOJ (Package 102)
FL = 44 Lead Ceramic Flatpack (Package 225)
FG = 44 Lead Formed Ceramic Flatpack
ACCESS TIME (ns)
IMPROVEMENT MARK:
Blank = Standard Power
L = Low Power Data Retention
ORGANIZATION, 256K x 16
SRAM
MONOLITHIC
WHITE ELECTRONIC DESIGNS CORP.
August 2004
Rev. 6
6
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMS256K16-XXX
White Electronic Designs
DEVICE TYPE
SPEED
PACKAGE
SMD NO.
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
35ns
25ns
20ns
17ns
44 lead SOJ (DL)
44 lead SOJ (DL)
44 lead SOJ (DL)
44 lead SOJ (DL)
5962-96902 01HMX
5962-96902 02HMX
5962-96902 03HMX
5962-96902 04HMX
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
35ns
25ns
20ns
17ns
44 lead Flatpack (FL)
44 lead Flatpack (FL)
44 lead Flatpack (FL)
44 lead Flatpack (FL)
5962-96902 01HNX
5962-96902 02HNX
5962-96902 03HNX
5962-96902 04HNX
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
35ns
25ns
20ns
17ns
44 lead Formed Flatpack (FG)
44 lead Formed Flatpack (FG)
44 lead Formed Flatpack (FG)
44 lead Formed Flatpack (FG)
5962-96902 01HTX
5962-96902 02HTX
5962-96902 03HTX
5962-96902 04HTX
August 2004
Rev. 6
7
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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