WMS512K8L-70DEME [WEDC]
Standard SRAM, 512KX8, 70ns, CMOS, CDSO32, CERAMIC, SOJ-32;
| 型号： | WMS512K8L-70DEME |
| 厂家： | 
WHITE ELECTRONIC DESIGNS CORPORATION |
| 描述： | Standard SRAM, 512KX8, 70ns, CMOS, CDSO32, CERAMIC, SOJ-32 CD 静态存储器 |
| 文件： | 总6页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WMS512K8-XXX
White Electronic Designs
512Kx8, MONOLITHIC SRAM, SMD 5962-95613
EVOLUTIONARY PINOUT
FEATURES
32 DIP
32 CSOJ (DE)
TOP VIEW
■
■
■
Access Times 70, 85, 100, 120ns
MIL-STD-883 Compliant Devices Available
Evolutionary, Corner Power/Ground Pinout JEDEC
Approved
A18
A16
A14
A12
A7
1
32 VCC
31 A15
30 A17
29 WE#
28 A13
27 A8
2
3
4
5
6
7
8
9
•
•
32 pin Ceramic DIP (Package 300)
32 lead Ceramic SOJ (Package 101)
A6
■
Commercial, Industrial and Military Temperature
Ranges
A5
26 A9
A4
25 A11
24 OE#
23 A10
22 CS#
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
A3
■
■
■
■
5V Power Supply
A2 10
A1 11
Low Power CMOS
A0 12
Low Power Data Retention
TTL Compatible Inputs and Outputs
I/O0 13
I/O1 14
I/O2 15
GND 16
PIN DESCRIPTION
A0-18
Address Inputs
Data Input/Output
Chip Select
I/O0-7
CS#
OE#
WE#
VCC
Output Enable
Write Enable
+5.0V Power
Ground
GND
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March, 2003
Rev. 4
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS512K8-XXX
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
Parameter
Symbol
TA
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
Unit
°C
°C
V
CS#
H
OE#
X
WE#
X
Mode
Standby
Read
Data I/O
High Z
Power
Standby
Active
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
L
L
H
Data Out
Data In
High Z
TSTG
VG
L
X
L
Write
Active
L
H
H
Out Disable
Active
TJ
°C
V
CAPACITANCE
VCC
-0.5
7.0
(TA = +25°C)
Parameter
Symbol
Condition
Max Unit
RECOMMENDED OPERATING CONDITIONS
Input capacitance
Output capacitance
CIN
VIN = 0V, f = 1.0MHz
VOUT = 0V, f = 1.0MHz
12
12
pF
pF
Parameter
Symbol
VCC
VIH
Min
4.5
2.2
-0.3
-55
Max
5.5
Unit
V
COUT
This parameter is guaranteed by design but not tested.
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
VCC + 0.3
+0.8
V
VIL
V
TA
+125
°C
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Units
Parameter
Symbol Conditions
Min Max
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
ILI
ILO
ICC
ISB
VCC = 5.5, VIN = GND to VCC
10
10
50
1
μA
μA
mA
mA
V
CS# = VIH, OE# = VIH, VOUT = GND to VCC
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
IOL = 2.1mA, VCC = 4.5
Output Low Voltage
Output High Voltage
VOL
VOH
0.4
2.4
IOH = -1.0mA, VCC = 4.5
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS
(TA = -55°C to +125°C)
Military
Typ
Parameter
Symbol
Conditions
Units
Min
2.0
Max
5.5
Data Retention Supply Voltage VDR
Data Retention Current ICCDR1
CS# ≥ VCC -0.2V
V
VCC = 3V
100
400
μA
DATA RETENTION CHARACTERISTICS FOR LOW POWER “L” VERSION
Parameter
Symbol
VDR
Conditions
Min
2.0
Max
5.5
Units
V
Data Retention Supply Voltage
Low Power Data Retention (L)
CS# ≥ VCC -0.2V
VCC = 2V
ICCDR1
185
μA
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March, 2003
Rev. 4
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS512K8-XXX
White Electronic Designs
AC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter
Symbol
-70
-85
-100
-120
Units
Read Cycle
Min
70
Max
70
Min
85
Max
85
Min
100
Max
100
Min
120
Max
120
Read Cycle Time
tRC
tAA
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
tOH
tACS
tOE
5
5
5
5
70
35
85
40
100
50
120
60
1
tCLZ
10
5
10
5
10
5
10
5
1
tOLZ
1
tCHZ
25
25
25
25
35
35
35
35
1
tOHZ
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter
Symbol -70
-85
Min
85
75
75
30
50
0
-100
-120
Units
Write Cycle
Min
Max
Max Min
Max
Min
120
100
100
40
60
0
Max
Write Cycle Time
tWC
tCW
tAW
tDW
tWP
tAS
70
60
60
30
50
0
100
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
80
80
40
60
Address Setup Time
0
Address Hold Time
tAH
5
5
5
5
1
Output Active from End of Write
Write Enable to Output in High Z
Data Hold from Write Time
tOW
5
5
5
5
1
tWHZ
tDH
25
25
35
35
0
0
0
0
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
V
IOL
Input Pulse Levels
VIL = 0, VIH = 3.0
Current Source
Input Rise and Fall
5
ns
V
Input and Output Reference Level
Output Timing Reference Level
1.5
1.5
V
VZ
≈
(Bipolar Supply)
1.5V
D.U.T.
Notes:
Ceff = 50 pf
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
IOH
Current Source
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March, 2003
Rev. 4
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS512K8-XXX
White Electronic Designs
TIMING WAVEFORM - READ CYCLE
tRC
ADDRESS
tRC
tAA
tAA
ADDRESS
DATA I/O
CS#
OE#
tCHZ
tACS
tCLZ
tOH
PREVIOUS DATA VALID
DATA VALID
tOE
tOLZ
tOHZ
READ CYCLE 1 (CS# = OE# = VIL, WE# = VIH
)
DATA I/O
DATA VALID
HIGH IMPEDANCE
READ CYCLE 2 (WE# = V
)
IH
WRITE CYCLE - WE# CONTROLLED
tWC
ADDRESS
tAW
tAH
tCW
CS
tAS
tWP
WE
tOW
tDH
tWHZ
tDW
DATA I/O
DATA VALID
WRITE CYCLE 1, WE CONTROLLED
WRITE CYCLE - CS# CONTROLLED
tWC
ADDRESS
tAW
tAH
tAS
tCW
CS#
tWP
WE#
tDW
tDH
DATA I/O
DATA VALID
WRITE CYCLE 2, CS# CONTROLLED
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March, 2003
Rev. 4
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS512K8-XXX
White Electronic Designs
PACKAGE 101: 32 LEAD, CERAMIC SOJ
21.1 (0.830) 0.25 (0.010)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
0.2 (0.008)
0.05 (0.002)
11.23 (0.442)
0.30 (0.012)
9.55 (0.376) 0.25 (0.010)
1.27 (0.050) 0.25 (0.010)
1.27 (0.050) TYP
19.1 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.8 (1.686) MAX
5.13 (0.202) MAX
3.2 (0.125) MIN
0.25 (0.010)
0.05 (0.002)
0.99 (0.039)
0.51 (0.020)
15.25 (0.600)
0.25 (0.010)
2.5 (0.100)
TYP
1.27 (0.050)
0.1 (0.005)
0.46 (0.018)
0.05 (0.002)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March, 2003
Rev. 4
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS512K8-XXX
White Electronic Designs
ORDERING INFORMATION
W M S 512K 8 L - XXX X X X X
LEAD FINISH:
Blank
A
=
=
Gold plated leads
Solder dip leads
SPECIAL PROCESSING:
Epitaxial Layer
E
=
DEVICE GRADE:
M
I
C
=
=
=
Military Screened
Industrial
Commercial
-55°C to +125°C
-40°C to +85°C
0°C to +70°C
PACKAGE:
C
DE
=
=
32 Pin Ceramic 0.600” DIP (Package 300)
32 Lead Ceramic SOJ (Package 101) Evolutionary
ACCESS TIME (ns)
IMPROVEMENT MARK
L
=
Low Power Data Retention
ORGANIZATION, 512K x 8
SRAM
MONOLITHIC
WHITE ELECTRONIC DESIGNS
DEVICE TYPE
SPEED PACKAGE
SMD NO.
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
120ns
100ns
85ns
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
5962-95613 01HYX
5962-95613 02HYX
5962-95613 03HYX
5962-95613 04HYX
70ns
120ns
100ns
85ns
32 lead SOJ Evol (DE) 5962-95613 01HTX
32 lead SOJ Evol (DE) 5962-95613 02HTX
32 lead SOJ Evol (DE) 5962-95613 03HTX
32 lead SOJ Evol (DE) 5962-95613 04HTX
70ns
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March, 2003
Rev. 4
6
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
相关型号：
WMS512K8L-85CIEA
Standard SRAM, 512KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
WEDC
WMS512K8L-85CME
Standard SRAM, 512KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
WEDC
WMS512K8L-85CMEA
Standard SRAM, 512KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
WEDC
©2020 ICPDF网 联系我们和版权申明