WMS512K8VL-120CIE [WEDC]
Standard SRAM, 512KX8, 120ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32;型号: | WMS512K8VL-120CIE |
厂家: | WHITE ELECTRONIC DESIGNS CORPORATION |
描述: | Standard SRAM, 512KX8, 120ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32 CD 静态存储器 |
文件: | 总6页 (文件大小:228K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
WMS512K8V-XCX
White Electronic Designs
ADVANCED*
512Kx8 MONOLITHIC SRAM
FEATURES
Access Times 70, 85, 100, 120ns
MIL-STD-883 Compliant Devices Available
Low Voltage Operation
EVOLUTIONARY PINOUT
32 DIP
32 CSOJ (DE)
TOP VIEW
Evolutionary, Corner Power/Ground Pinout JEDEC
Approved
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2 10
A1 11
A0 12
I/O0 13
I/O1 14
I/O2 15
GND 16
1
2
3
4
5
6
7
8
9
32 VCC
• 32 pin Ceramic DIP (Package 300)
• 32 lead Ceramic SOJ (Package 101)
31 A15
30 A17
29 WE#
28 A13
27 A8
Commercial, Industrial and Military Temperature
Ranges
26 A9
Low Power CMOS
25 A11
24 OE#
23 A10
22 CS#
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
Low Voltage Operation
• 3.3V ± 10% Power Supply
Low Power Data Retention
TTL Compatible Inputs and Outputs
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
PIN DESCRIPTION
A0-18 Address Inputs
I/O0-7 Data Input/Output
CS#
OE#
WE#
VCC
Chip Select
Output Enable
Write Enable
+3.3V Power Supply
Ground
GND
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
February, 2000
Rev. 2
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS512K8V-XCX
White Electronic Designs
ADVANCED*
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
Parameter
Symbol Min
Max
+125
+150
Unit
°C
°C
V
CS#
H
OE#
X
WE#
Mode
Data I/O
Power
Standby
Active
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
TA
TSTG
VG
-55
-65
X
H
L
Standby
Read
High Z
Data Out
Data In
High Z
L
L
-0.5 VCC+0.5
150
L
X
Write
Active
TJ
°C
V
L
H
H
Out Disable
Active
VCC
-0.5
7.0
RECOMMENDED OPERATING CONDITIONS
CAPACITANCE
TA = +25°C
Parameter
Symbol Min
Max
Unit
V
Parameter
Symbol Condition
Max
12
Unit
Supply Voltage
VCC
VIH
VIL
TA
3.0
3.6
Input capacitance
Output capacitance
CIN
VIN = 0V, f = 1.0MHz
pF
pF
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
2.2 VCC + 0.3
V
COUT VOUT = 0V, f = 1.0MHz
This parameter is guaranteed by design but not tested.
12
-0.3
-55
+0.8
V
+125
°C
DC CHARACTERISTICS
VCC = 3.3V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
ILI
Conditions
Min
Max
10
Units
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
VCC = 3.6, VIN = GND to VCC
μA
μA
mA
μA
V
ILO
CS# = VIH, OE# = VIH, VOUT = GND to VCC
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 3.6
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 3.6
IOL = 2.1mA, VCC = 3.0
10
ICC
25
ISB
400
0.4
Output Low Voltage
Output High Voltage
VOL
VOH
IOH = -1.0mA, VCC = 3.0
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
February, 2000
Rev. 2
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS512K8V-XCX
White Electronic Designs
ADVANCED*
AC CHARACTERISTICS
VCC = 3.3V, GND = 0V, -55°C ≤ TA ≤ +125°C
-70
-85
-100
-120
Parameter
Read Cycle
Symbol
Units
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
tAA
70
85
100
120
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
70
85
100
120
Output Hold from Address Change
Chip Select Access Time
tOH
tACS
tOE
5
5
5
5
70
35
85
40
100
50
120
60
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
1. This parameter is guaranteed by design but not tested.
1
tCLZ
10
5
10
5
10
5
10
5
1
tOLZ
1
tCHZ
25
25
25
25
35
35
35
35
1
tOHZ
AC CHARACTERISTICS
VCC = 3.3V, GND = 0V, -55°C ≤ TA ≤ +125°C
-70
-85
-100
-120
Parameter
Write Cycle
Symbol
Units
Min
70
60
60
30
50
0
Max
Min
85
75
75
35
50
0
Max
Min
100
80
80
40
60
0
Max
Min
120
100
100
40
60
0
Max
Write Cycle Time
tWC
tCW
tAW
tDW
tWP
tAS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
tAH
5
5
5
5
1
Output Active from End of Write
Write Enable to Output in High Z
Data Hold from Write Time
1. This parameter is guaranteed by design but not tested.
tOW
5
5
5
5
1
tWHZ
25
25
35
35
tDH
0
0
0
0
AC TEST CIRCUIT
AC TEST CONDITIONS
IOL
Parameter
Typ
Unit
V
Input Pulse Levels
VIL = 0, VIH = 3.0
Current Source
Input Rise and Fall
5
ns
V
Input and Output Reference Level
Output Timing Reference Level
1.5
1.5
V
V
Z
≈
1.5V
D.U.T.
NOTES:
(Bipolar Supply
C
eff = 50 pf
Vz is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
Vz is typically the midpoint of VOH and VOL
.
IOH
IOL & IOH are adjusted to simulate a typical resistive load circuit.
Current Source
ATE tester includes jig capacitance.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
February, 2000
Rev. 2
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS512K8V-XCX
White Electronic Designs
ADVANCED*
TIMING WAVEFORM - READ CYCLE
tRC
ADDRESS
CS#
tAA
t
RC
ADDRESS
DATA I/O
tAA
tACS
tCLZ
tCHZ
tOH
OE#
PREVIOUS DATA VALID
READ CYCLE 1 (CS# = OE# = VIL, WE# = VIH
DATA VALID
tOE
tOLZ
tOHZ
DATA VALID
)
DATA I/O
HIGH IMPEDANCE
READ CYCLE 2 (WE# = VIH)
WRITE CYCLE - WE# CONTROLLED
tWC
ADDRESS
tAW
tAH
tCW
CS#
tAS
tWP
WE#
tOW
tDW
tDH
tWHZ
DATA VALID
DATA I/O
WRITE CYCLE 1, WE# CONTROLLED
WRITE CYCLE - CS# CONTROLLED
tWC
ADDRESS
CS#
tAW
tAS
tAH
tCW
tWP
WE#
tDW
tDH
DATA I/O
DATA VALID
WRITE CYCLE 2, CS# CONTROLLED
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
February, 2000
Rev. 2
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS512K8V-XCX
White Electronic Designs
ADVANCED*
PACKAGE 101: 32 LEAD, CERAMIC SOJ
21.1 (0.830) 0.25 (0.010)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
0.2 (0.008)
0.05 (0.002)
11.3 (0.446)
0.2 (0.009)
9.55 (0.376) 0.25 (0.010)
1.27 (0.050) 0.25 (0.010)
PIN 1 IDENTIFIER
1.27 (0.050) TYP
19.1 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.8 (1.686) MAX
5.13 (0.202) MAX
3.2 (0.125) MIN
PIN 1 IDENTIFIER
0.25 (0.010)
± 0.05 (0.002)
0.99 (0.039)
± 0.51 (0.020)
15.25 (0.600)
± 0.25 (0.010)
2.5 (0.100)
TYP
1.27 (0.050)
± 0.1 (0.005)
0.46 (0.018)
± 0.05 (0.002)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
February, 2000
Rev. 2
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS512K8V-XCX
White Electronic Designs
ADVANCED*
ORDERING INFORMATION
W M S 512K 8 V L - XXX X X X X
LEAD FINISH:
Blank = Gold plated leads
Solder dip leads
A
=
SPECIAL PROCESSING:
Epitaxial Layer
E
=
DEVICE GRADE:
M
I
C
=
=
=
Military Screened
Industrial
Commercial
-55°C to +125°C
-40°C to +85°C
0°C to +70°C
PACKAGE:
C
DE
=
=
32 Pin Ceramic 0.600” DIP (Package 300)
32 Lead Ceramic SOJ (Package 101) Evolutionary
ACCESS TIME (ns)
IMPROVEMENT MARK
L = Low Power Data Retention
Low Voltage Supply 3.3V ± 10%
ORGANIZATION, 512K x 8
SRAM
MONOLITHIC
WHITE ELECTRONIC DESIGNS CORP.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
February, 2000
Rev. 2
6
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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