BYQ28X-200E [WEEN]
Dual ultrafast power diodes;型号: | BYQ28X-200E |
厂家: | WeEn Semiconductors |
描述: | Dual ultrafast power diodes 二极管 |
文件: | 总10页 (文件大小:394K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BYQ28X-200E
Dual ultrafast power diodes
17 July 2017
Product data sheet
1. General description
Dual ultrafast power diodes in a SOT186A (TO-220F) isolated plastic package. These diodes are
rugged with a guaranteed electrostatic discharge voltage capability.
2. Features and benefits
•
Fast switching
•
•
•
•
•
Guaranteed ESD capability
High thermal cycling performance
Isolated package
Low on-state losses
Soft recovery minimizes power-consuming oscillations
3. Applications
•
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
VR
Parameter
Conditions
Min
Typ
Max
200
10
Unit
V
reverse voltage
DC
-
-
-
-
IFRM
repetitive peak forward δ = 0.5 ; tp = 25 µs; Th ≤ 92 °C; SQW;
A
current
per diode
IFSM
non-repetitive peak
forward current
tp = 10 ms; Tj(init) = 25 °C; SIN; per
diode
-
-
-
-
50
55
A
A
tp = 8.3 ms; Tj(init) = 25 °C; SIN; per
diode
Static characteristics
VF
forward voltage
IF = 5 A; Tj = 25 °C; Fig. 4
IF = 5 A; Tj = 150 °C; Fig. 4
IF = 10 A; Tj = 25 °C; Fig. 4
-
-
-
0.95
0.8
1.1
V
V
V
0.895
1.25
1.1
Dynamic characteristics
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; ramp recovery; Fig. 5
-
15
25
ns
WeEn Semiconductors
BYQ28X-200E
Dual ultrafast power diodes
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
A1
K
anode 1
mb
A1
A2
2
cathode
K
3
A2
n.c.
anode 2
sym125
mb
mounting base; isolated
1
2 3
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BYQ28X-200E
TO-220F
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
©
BYQ28X-200E
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Product data sheet
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WeEn Semiconductors
BYQ28X-200E
Dual ultrafast power diodes
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
-
200
V
VRWM
crest working reverse
voltage
-
200
V
VR
reverse voltage
DC
-
-
-
200
10
V
A
A
IO(AV)
IFRM
average output current
δ = 0.5 ; Th ≤ 92 °C; SQW; Fig. 1; Fig. 2
repetitive peak forward
current
δ = 0.5 ; tp = 25 µs; Th ≤ 92 °C; SQW; per
diode
10
IFSM
non-repetitive peak
forward current
tp = 10 ms; Tj(init) = 25 °C; SIN; per diode
tp = 8.3 ms; Tj(init) = 25 °C; SIN; per diode
δ = 0.001 ; tp = 2 µs
-
-
-
50
55
0.2
A
A
A
IRRM
IRSM
repetitive peak reverse
current
non-repetitive peak
reverse current
tp = 100 µs
-
0.2
A
Tstg
Tj
storage temperature
junction temperature
-40
-
150
150
°C
°C
Electrostatic discharge
VESD electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ; all pins
-
8
kV
001aag976
001aag977
8
6
4
2
0
6
P
tot
δ = 1
P
(W)
tot
(W)
a = 1.57
1.9
0.5
4
2
0
2.2
2.8
0.2
4.0
0.1
0
2
4
6
8
0
2
4
6
I
(A)
I
(A)
F(AV)
F(AV)
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
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BYQ28X-200E
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
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WeEn Semiconductors
BYQ28X-200E
Dual ultrafast power diodes
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-h)
thermal resistance
from junction to
heatsink
with heatsink compound; Fig. 3
-
-
5.7
K/W
Rth(j-a)
thermal resistance
from junction to
ambient free air
-
55
-
K/W
003aac898
10
Z
th(j-h)
(K/W)
1
- 1
- 2
- 3
10
10
10
t
p
P
δ =
T
t
t
p
T
t
- 6
- 5
- 4
- 3
- 2
- 1
10
10
10
10
10
10
1
10
(s)
p
Fig. 3. Transient thermal impedance from junction to heatsink as a function of pulse width
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage 50 Hz < f < 60 Hz; sinusoidal
waveform; relative humidity < 65 %;
clean and dust free; from all terminals
to external heatsink
-
-
2500
V
Cisol
isolation capacitance
f = 1 MHz; from cathode to external
heatsink
-
-
10
10
-
-
pF
pF
from cathode to external heatsink; f = 1
MHz
©
BYQ28X-200E
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
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WeEn Semiconductors
BYQ28X-200E
Dual ultrafast power diodes
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
VF forward voltage
Parameter
Conditions
Min
Typ
Max
Unit
IF = 5 A; Tj = 25 °C; Fig. 4
IF = 5 A; Tj = 150 °C; Fig. 4
IF = 10 A; Tj = 25 °C; Fig. 4
VR = 200 V; Tj = 25 °C
-
-
-
-
-
0.95
0.8
1.1
2
1.1
V
0.895
1.25
10
V
V
IR
reverse current
µA
mA
VR = 200 V; Tj = 100 °C
0.1
0.2
Dynamic characteristics
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; ramp recovery; Fig. 5
-
-
15
10
25
20
ns
s
IF = 0.5 A; IR = 1 A; Tj = 25 °C; step
recovery; measured at IR = 0.25 A;
Fig. 6
IRM
Qr
peak reverse recovery IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs;
-
-
-
0.4
4
0.7
9
A
current
Tj = 25 °C; Fig. 5
recovered charge
IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs;
Tj = 25 °C; Fig. 5
µC
V
VFR
forward recovery
voltage
IF = 1 A; dIF/dt = 10 A/µs; Tj = 25 °C;
Fig. 7
1
-
001aag978
dl
F
15
10
5
I
F
dt
I
F
(A)
t
rr
(1)
(2)
(3)
time
25 %
100 %
Q
r
I
I
RM
R
003aac562
0
0
0.5
1.0
1.5
V
(V)
F
Fig. 5. Reverse recovery definitions; ramp recovery
Fig. 4. Forward current as a function of forward voltage
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BYQ28X-200E
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
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WeEn Semiconductors
BYQ28X-200E
Dual ultrafast power diodes
I
F
I
F
I
F
t
rr
time
time
0.25 x I
R
V
F
Q
r
V
FRM
I
R
V
F
I
R
003aac563
time
001aab912
Fig. 6. Reverse recovery definitions; step recovery
Fig. 7. Forward recovery definitions
©
BYQ28X-200E
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Product data sheet
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BYQ28X-200E
Dual ultrafast power diodes
11. Package outline
Fig. 8. Package outline TO-220F (SOT186A)
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BYQ28X-200E
Dual ultrafast power diodes
Right to make changes — WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12. Legal information
Suitability for use — WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
be expected to result in personal injury, death or severe property or
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Data sheet status
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Product
[short] data
sheet
Production
This document contains the product
specification.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
[1] Please consult the most recently issued document before initiating or
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Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
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associated with their applications and products.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
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multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com.
Definitions
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the WeEn Semiconductors product
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©
BYQ28X-200E
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
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WeEn Semiconductors
BYQ28X-200E
Dual ultrafast power diodes
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
BYQ28X-200E
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
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WeEn Semiconductors
BYQ28X-200E
Dual ultrafast power diodes
13. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 4
9. Isolation characteristics...............................................4
10. Characteristics............................................................5
11. Package outline.......................................................... 7
12. Legal information....................................................... 8
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
For more information, please visit: http://www.ween-semi.com
For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 17 July 2017
©
BYQ28X-200E
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
17 July 2017
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