概述
规格参数
数据手册2SD2150 概述
NPN Epitaxial Planar Transistors NPN外延平面晶体管 小信号双极晶体管
2SD2150 规格参数
| 生命周期： | Contact Manufacturer | 包装说明： | , |
| Reach Compliance Code： | unknown | 风险等级： | 5.26 |
| Base Number Matches： | 1 |
2SD2150 数据手册
通过下载2SD2150数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载2SD2150
NPN Epitaxial Planar Transistors
SOT-89
P b
Lead(Pb)-Free
1
2
1. BASE
2. COLLECTOR
3
3. EMITTER
ABSOLUTE MAXIMUM RATINGS (T =25˚C)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Symbol
Limits
Unit
V
V
V
V
CBO
40
20
V
CEO
V
Emitter-Base Voltage
Collector Current
EBO
6
3
I
A
C
Collector Power Dissipation
Junction Temperature
mW
˚C
P
500
D
T
150
j
T
-55 to +150
Storage Temperature Range
stg
˚C
ELECTRICAL CHARACTERISTICS(T =25˚Cunless otherwise noted)
A
Min
Typ
Parameter
Symbol
Max
Unit
Collector-Base Breakdown Voltage
BV
BV
BV
40
-
-
V
CBO
CEO
EBO
I =50µA, I =0
C
E
Collector-Emitter Breakdown Voltage
I =1mA, I =0
20
6
-
-
-
-
-
V
V
C
B
Emitter-Base Breakdown Voltage
I =50µA, I =0
E
C
Collector Cutoff Current
=30V, I =0
I
I
-
0.1
µA
CBO
V
CB
E
Emitter Cutoff Current
-
-
0.1
µA
EBO
V
EB
=5V, I =0
E
WEITRON
http://www.weitron.com.tw
1/4
15-Aug-05
2SD2150
ELECTRICAL CHARACTERISTICS (T =25˚C Unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
=2V, I =100mA
h
120
-
-
-
560
0.5
-
FE
V
CE
C
Collector-Emitter Saturation Voltage
=2A, I =100mA
V
V
CE(sat)
I
C
B
1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
DYNAMIC CHARACTERISTICS
Transition Frequency
f
MHz
pF
-
-
290
25
-
-
T
V
CE
=2V, I =500mA, f=100MHz
C
Output Capacitance
=10V, I =0, f=1MHz
C
ob
V
CB
E
CLASSIFICATION OF h
FE
Marking
CFQ
Q
CFR
CFS
Rank
R
S
h
120-270
180-390
270-560
FE
WEITRON
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2SD2150
ELECTRICAL CHARACTERISTIC CURVES
10
1
V
CE=2V
125
100
75
Ta=100°C
25°C
−40°C
0.1
50
0.01
0.001
25
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
25
50
75
100
125
150
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.2 Grounded emitter propagation
characteristics
Fig.1 AMBIENT TEMPERATURE : Ta(˚C)
1
l
C
B
/l =20
5000
Ta=100°C
25°C
V =2V
CE
Ta=100°C
25°C
1000
100
0.1
−40°C
−40°C
0.01
10
5
0.001
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC(A)
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs collector current
Fig.4 Collector-emitter saturation voltage
vs collector curren
WEITRON
http://www.weitron.com.tw
3/4
15-Aug-05
2SD2150
SOT-89 Outline Dimensions
unit:mm
SOT-89
Dim
A
B
C
D
Min
Max
E
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
A
G
H
J
C
E
G
H
J
D
B
K
K
L
1.500TYP
L
2.900
3.100
WEITRON
http://www.weitron.com.tw
4/4
15-Aug-05
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| 2SD2150Q | ETC | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SC-62 | 获取价格 |
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| 2SD2150R-G | WEITRON | Transistor | 获取价格 |
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