B130H [WEITRON]
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, LEAD FREE PACKAGE-2;
| 型号： | B130H |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, LEAD FREE PACKAGE-2 |
| 文件： | 总3页 (文件大小：531K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B120H thru B1200H
Surface Mount Schottky Barrier Rectifiers
REVERSE VOLTAGE
20 TO 200 VOLTS
FORWARD CURRENT
1.0 AMPERES
P b
Lead(Pb)-Free
Features:
* Batch process design, excellent power dissipation oꢀers
better reverse leakage current and thermal resistance
* Low proꢁle surface mounted application in order to
optimize board space
* Low power loss, high eꢂciency
* High current capability, low forward voltage drop
* High surge capability
* Guarding for overvoltage protection
* Ultra high-speed switching
SOD-123H
* Silicon epitaxial planar chip, metal silicon junction
* Lead-free parts meet environmental standards of MIL-STD-19500/228
Mechanical Data:
* Epoxy : UL94-V0 rated flame retardant
* Case : Molded plastic, JEDEC SOD-123H
* Terminals : Plated terminals, solderable per MIL-STD-750, Method 2026
* Polarity : Indicated by c athode band
* Mounting Position : Any
* Weight : Approximated 0.011 gram
SOD-123H Outline Dimension
unit:mm
B
C
SOD-123H
Dim
A
B
C
E
H
J
Max
1.80
Min
1.40
A
3.30
3.70
E
0.30(TYP)
-
2.70
3.10
J
0.80(TYP)
1.00
-
H
0.60
H
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B120H thru B1200H
MAXIMUM RATING
Characteristics
Symbol
B120H B130H B140H B150H B160H B180H B1100H B1150H B1200H
Unit
V
VRRM
20
14
30
21
40
28
50
35
60
42
80
56
100
70
150
105
200
140
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRMS
V
VR
150
200
V
V
A
20
30
40
50
60
80
100
Continuous Reverse Voltage
@TA=25°C
Maximum Instantaneous
V
F
0.5
0.7
1.0
0.85
0.90
0.92
I
O
Maximum Average Forward (Fig.1)
Peak Forward Surge Current
30
8.3 ms Single Half Sine-Wave
IFSM
A
Superimposed on Rated Load (JEDEC Method)
0.5
10
Maximum DC Reverse Current @T
A
=25˚C
I
R
mA
˚C/W
pF
At Rated DC Blocking Voltage @T
A
=125˚C
Thermal Resistance
Junction to Case
RθJC
40
Diode Junction Capacitance
f=1MHz and Applied 4V DC Reverse Voltage
CJ
120(TYP)
TJ
Operating Temperature Range
-55 to+125
-55 to+150
˚C
˚C
TSTG
-65 to+175
Storage Temperature Range
Device Marking
B120H = 12, B130H = 13, B140H = 14, B150H = 15, B160H = 16, B180H = 18, B1100H = 10
B1150H = 115, B1200H = 120
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B120H thru B1200H
RATINGAND CHARACTERISTIC CURVES
1.2
1.0
0.8
0.6
50
10
3.0
1.0
0.4
0.2
0
0
20
40
60
80
100
120
140
160
180
200
LEAD TEMPERATURE,(˚C)
Tj=25°C
Pulse Width 300us
1% Duty Cycle
FIG.1 Typical Forward Current Derating Curve
0.1
25
Tj=25 ºC
8.3ms Single Half
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Sine Wave
20
15
JEDEC method
FORWARD VOLTAGE,(V)
FIG.2 Typical Forward Characteristics
10
5
0
50
1
5
10
100
NUMBER OF CYCLES AT 60Hz
100
10
FIG.3 Maximum Non-Repetitive Forward
Surge Current
350
300
250
200
1.0
Tj=75 C
150
100
50
.1
Tj=25 C
.01
0
0
20 40 60 80 100 120 140
.01
.05
.1
.5
1
5
10
50
100
PERCENT OF RATED PEAK REVERSE VOLTAGE(%)
REVERSE VOLTAGE,(V)
FIG.5 Typcial Reverse Characteristics
FIG.4 Typical Junction Capacitance
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