BAT54AW [WEITRON]
Surface Mount Schottky Barrier Diodes; 表面贴装肖特基势垒二极管
| 型号： | BAT54AW |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Mount Schottky Barrier Diodes |
| 文件： | 总3页 (文件大小：564K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT54W/BAT54CW
BAT54AW/BAT54SW
Surface Mount Schottky Barrier Diodes
SMALL SIGNAL
SCHOTTKY DIODES
200m AMPERES
30 VOLTS
Features:
*Extremely Fast Switching Speed
*Low Forward Voltage
*Very Small Conduction Losses
*Schottky Barrier Diodes Encapsulated in a SOT-323 Package
*Lead(Pb)-Free
3
Description:
1
2
These schottky barrier diodes are designed for high speed
switching applications circuit protection, and voltage clamping,
Extremely low forward voltage reduces conduction loss,
Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
SOT-323(SC-70)
Unit:mm
SOT-323 Outline Demensions
A
SOT-323
Dim
A
B
C
D
Min
0.30
1.15
2.00
-
0.30
1.20
1.80
0.00
0.80
0.42
0.10
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
B
C
TOP VIE W
D
G
E
E
G
H
J
K
L
H
K
L
M
J
M
WEITRON
hpp://www.weitron.com.tw
1/3
29-Jul-05
BAT54W/BAT54CW
BAT54AW/BAT54SW
WEITRON
Maximum Ratings (T =125 C Unless otherwise noted)
J
Symbol
Characteristic
Reverse Voltage
BAT54W/CW/AW/SW
Unit
V
R
30
Volts
Average Rectifier
Forward Current
I
200
300
600
mA
mA
F(AV)
Peak Repetitive
Forward Current
Rated V , Square Wave,20KHz
R
I
FRM
Non-Repetitive
mA
I
FSM
Forward Current(t 1.0s)
Operating Junction
Temperature Range
-55 to +125
-55 to +150
T
J
C
C
Storage Temperature Range
T
stg
Electrical Characteristics (T =25 C Unless otherwise noted)
A
Symbol
Min
Typ
Max
Unit
Characteristic
Reverse Breakdown Voltage (I =10µA)
R
V
30
(BR)R
Volts
Volts
Forward Voltage
V
F
0.24
0.32
0.40
0.50
1.00
0.22
0.29
0.35
0.41
0.52
I =0.1mA
F
I =1.0mA
F
I =10mA
F
I =30mA
F
I =100mA
F
Total Capacitance
(V =1.0V, f=1.0MHz)
R
F
P
7.6
0.5
10
C
I
T
Reverse Leakage
(V =25V)
R
µAdc
nS
R
2.0
5.0
Reverse Recover Time
Trr
(I =I =10mA, I
F R
=1.0mA)
R(Rec)
Device Marking
Item
Eqivalent Circuit diagram
Marking
3
1
BAT54W
B4 , KL5
L3 , KL7
1
2
3
BAT54CW
1
2
3
BAT54AW
BAT54SW
B6 , B7 , KL6
B8 , KL8
1
2
3
WEITRON
http://www.weitron.com.tw
2/3
29-Jul-05
BAT54W/BAT54CW
BAT54AW/BAT54SW
WEITRON
Ω
820
I
F
+10V
t
p
2.0K
t
t
r
I
F
0.1µF
100 µH
t
rr
10%
t
0.1µF
D.U.T.
90%
Ω
I
=1.0mA
Ω
50 OUTPUT
50 INPUT
SAMPLING
R(REC)
I
R
V
PULSE
R
INPUT SIGNAL
GENERATOR
OSCILLOSCOPE
OUTPUT PULSE
(I =I =10mA, MEASURED
F
R
AT I =1.0mA
R(REC)
Ω
Notes:1. A 2.0 k variable resistor for a Forward Current (I ) 0f 10 mA
F
2. Input pules is adjusted so I (peak) is equal to 10 mA
R
»
3. t
t
rr
p
FIG.1 Recovery Time Equivalent Test Circuit
100
10
1000
TA=150 C
100
10
TA=125 C
150 C
1.0
TA=85 C
125 C
1.0
0.1
25 C
85 C
0.01
-40 C
TA=25 C
-55 C
0.1
0.0
0.001
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
15
20
25
30
V ,REVERSE VOLTAGE (V)
R
V
FORWARD VOLTAGE (V)
F,
FIG.3 Leakage Current
FIG.2 Forward Voltage
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
V ,REVERSE VOLTAGE (V)
R
FIG.4 Toral Capacitance
WEITRON
http://www.weitron.com.tw
3/3
29-Jul-05
相关型号：
BAT54AW-7
Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
BAT54AW-T1-LF
Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
WTE
BAT54AW.115
Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a very small SOT323
NXP
©2020 ICPDF网 联系我们和版权申明