BAT54TDW [WEITRON]
Surface Mount Schottky Barrier Diodes Arrays; 表面贴装肖特基势垒二极管阵列
| 型号： | BAT54TDW |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Mount Schottky Barrier Diodes Arrays |
| 文件： | 总4页 (文件大小：338K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT54TDW/BAT54CDW
BAT54ADW/BAT54SDW
BAT54BRW
WEITRON
Surface Mount Schottky Barrier Diodes Arrays
SMALL SIGNAL
SCHOTTKY DIODES
200m AMPERES
30 VOLTS
Features:
* Extremely Fast Switching Speed.
* Low Forward Voltage.
* Very Small Conduction Losses.
* PN Junction Guard Ring for Transient and ESD Protection.
6
5
4
Mechanical Data:
* Case: SOT-363, Molded plastic.
1
2
3
* Terminals: Solderable per MIL-STD-202, Method 208.
* Marking: See Diagrams Below & Page 3.
* Weight: 0.006 grams(approx).
SOT-363(SC-88)
SOT-363 Outline Dimensions
Unit:mm
A
SOT-363
Dim
Min
0.10
1.15
2.00
Max
0.30
1.35
2.20
6
5
4
B
A
B
C
D
E
H
J
K
L
M
C
1
2
3
0.65 REF
E
D
0.30
1.80
-
0.80
0.25
0.10
0.40
2.20
0.10
1.10
0.40
0.25
H
K
M
L
J
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BAT54TDW/BAT54CDW
BAT54ADW/BAT54SDW
BAT54BRW
WEITRON
Maximum Ratings (T =25 C Unless otherwise noted)
A
Symbol
Characteristic
Unit
Value
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
30
V
RMW
V
R
Average Rectifier
Forward Current
I
mA
mA
F(AV)
200
300
Peak Repetitive
Forward Current
Rated V , Square Wave,20KHz
R
I
FRM
Non-Repetitive
600
200
mA
mw
I
FSM
Pd
Forward Current(t 1.0s)
Power Dissipation
Thermal Resistance, Junction to
Ambient Air
R
JA
J
500
C/W
Operating Junction
Temperature Range
125
T
C
C
Storage Temperature Range
T
-55 to +150
stg
Electrical Characteristics (T =25 C Unless otherwise noted)
A
Typ
Min
Unit
Max
Symbol
Characteristic
Reverse Breakdown Voltage (I =10µA)
R
V
30
(BR)R
Volts
Forward Voltage
0.32
0.40
0.50
1.00
I =1.0mA
F
V
F
I =10mA
F
Volts
I =30mA
F
I =100mA
F
Total Capacitance
(V =1.0V, f=1.0MHz)
R
C
I
T
10
P
F
Reverse Leakage
uAdc
nS
2.0
5.0
R
V =25V
R
Reverse Recover Time
I =I =10mA, I
F R R(Rec)
Trr
=0.1xIR, RL
Ω
WEITRON
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25-Feb-2011
BAT54TDW/BAT54CDW
BAT54ADW/BAT54SDW
BAT54BRW
WEITRON
Device Marking
Item
Eqivalent Circuit diagram
Marking
1
2
3
6
5
4
BAT54TDW
BAT54ADW
KLA
1
2
6
KL6
KL7
5
4
3
1
2
6
BAT54CDW
5
4
3
1
6
5
KLB
KL8
BAT54BRW
BAT54SDW
2
3
4
1
2
6
5
4
3
820
I
F
+10V
2.0K
t
t
t
p
r
I
F
0.1µF
100 µH
0.1µF
t
10%
rr
t
D.U.T.
90%
I
=1.0mA
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
R(REC)
I
R
V
R
INPUT SIGNAL
OUTPUT PULSE
(I =I =10mA, MEASURED
F
R
AT I
=1.0mA)
R(REC)
Notes:1. A 2.0 k variable resistor for a Forward Current (I ) 0f 10 mA
F
2. Input pules is adjusted so I (peak) is equal to 10 mA
R
»
3. t
t
rr
p
FIG.1 Recovery Time Equivalent Test Circuit
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BAT54TDW/BAT54CDW
BAT54ADW/BAT54SDW
BAT54BRW
WEITRON
100
1000
100
10
TA=150 C
TA=125 C
150 C
10
1.0
TA=85 C
TA=25 C
125 C
1.0
0.1
25 C
85 C
0.01
0.001
-40 C
-55 C
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
15
20
25
30
V
,REVERSE VOLTAGE (VOLTS)
V
FORWARD VOLTAGE (VOLTS)
R
F,
FIG.3 Leakage Current
FIG.2 Forward Voltage
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
V
,REVERSE VOLTAGE (VOLTS)
R
FIG.4 Toral Capacitance
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