BC807-25 [WEITRON]
General Purpose Transistor; 通用晶体管
| 型号： | BC807-25 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | General Purpose Transistor |
| 文件： | 总4页 (文件大小：339K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC807-16/
BC807-40
BC807-25
COLLECTOR
3
MARKING DIAGRAM
General Purpose Transistor
PNP Silicon
3
1
BASE
1
2
SOT-23
2
EMITTER
( T =25 C unless otherwise noted)
Maximum Ratings
A
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Value
Unit
V
V
V
-45
CEO
V
-50
CBO
Emitter-Base VOltage
V
-5.0
500
V
EBO
Collector Current-Continuous
I
C
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(Note 1.)T =25 C
A
Derate above 25 C
Symbol
Max
Unit
(1)
P
D
mW
mW/ C
225
1.8
R
θ
JA
C/W
Thermal Resistance, Junction to Ambient
556
Total Device Dissipation Alumina
300
2.4
Substrate, (Note 2.) T =25 C
A
mW
mW/ C
P
D
Derate above 25 C
R
θ
C/W
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
417
JA
T
J,Tstg
-55 to +150
C
Device Marking
BC807-17=5A1 , BC807-25=5B1 , BC807-40=5C1
1.FR -5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
WEITRON
http://www.weitron.com.tw
Rev.A 16-Dec-08
BC807-16/BC807-25
BC807-40
WE ITR ON
(TA=25 C Unless Otherwise noted)
Electrical Characteristics
Typ
Symbol
Unit
Characteristics
Min
Max
Off Characteristics
Collector-Emitter Breakdown Voltage
(I = -10mA)
C
V
V
V
-
-
(BR)CEO
-45
-50
Collector-Emitter Breakdown Voltage
V(
-
-
-
-
BR)CES
(I =-10 µA ,V =0)
C
EB
Emitter-Base Breakdown Voltage
(I =-1.0 µA)
E
V
V
(BR)EBO
-5.0
Collector Cutoff Current (V =20V)
CB
-
-
-
-
100
5.0
nA
m
A
I
CBO
(V =20V, T =150 C)
CB
A
(TA=25 C Unless Otherwise noted)
Electrical Characteristics
Typ
Characteristics
Symbol
Unit
Min
Max
On Characteristics
DC Current Gain
(I = -100mA, V =-1.0V)
C CE
BC807-16
BC807-25
BC807-40
-
-
250
400
600
100
160
250
-
h
FE
-
-
(I = -500mA,V =-1.0V)
C CE
40
-
-
-
-
-
Collector-Emitter Saturation Voltage
(I = -500mA, I =50mA)
V
V
-0.7
V
CE(sat)
C
B
-
-
-
-
-
Base-Emitter On Voltage
(I = -500mA, I =-1.0V)
V
BE(on)
-1.2
C
B
Small-signal Characteristics
Current-Gain-Bandwidth Product
(I = -10mA, VCE= -5.0VDC, f=100MHz)
C
-
-
100
fT
Cobo
MHz
pF
Output Capacitance
-
10
-
(V = -10V, f=1.0MHz)
CB
WEITRON
http://www.weitron.com.tw
BC807-16/BC807-25
BC807-40
1000
100
10
V
T
A
= -1.0 V
CE
= 25 C
-0.1
-1.0
-10
-100
-1000
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
-1.0
-0.8
-0.6
-0.4
-1.0
T
A
= 25C
T
= 25 C
J
V
@ I /I = 10
BE(sat) C B
-0.8
-0.6
-0.4
-0.2
0
V
@ V = -1.0 V
CE
BE(on)
I
C
=
-500 mA
I
= -300 mA
C
-0.2
I
= -100 mA
C
V
@ I /I = 10
CE(sat) C B
I
C
= -10 mA
0
-0.01
-0.1
-1.0
-10
-100
-1.0
-10
I , COLLECTOR CURRENT (mA)
C
-100
-1000
I
, BASE CURRENT (mA)
B
"
"
Figure 2. Saturation Region
Figure 3. On Voltages
100
10
+1.0
θ
for V
CE(sat)
VC
0
-1.0
-2.0
C
ib
C
ob
θ
for V
BE
VB
1.0
-1.0
-10
-100
-1000
-0.1
-1.0
-10
-100
I , COLLECTOR CURRENT
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. T emperature Coefficients
Figure 5. Capacitances
WEITRON
http://www.weitron.com.tw
BC807-16/BC807-25
BC807-40
SOT-23 Package Outline Dimension
S OT-23
A
Dim
A
B
C
D
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
B
C
TOP VIEW
E
D
G
G
H
J
K
L
E
H
K
L
M
J
M
WEITRON
http://www.weitron.com.tw
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