BC846AW [WEITRON]
General Purpose Transistor; 通用晶体管型号: | BC846AW |
厂家: | WEITRON TECHNOLOGY |
描述: | General Purpose Transistor |
文件: | 总4页 (文件大小:2833K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
General Purpose Transistor
NPN Silicon
COLLECTOR
3
3
P b
Lead(Pb)-Free
1
1
2
BASE
2
EMITTER
SOT-323(SC-70)
Maximum Ratings (T =25°C Unlesso therwise noted)
A
Rating
Symbol
Value
Unit
65
45
30
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
BC846
BC847
BC848
V
V
CEO
CBO
BC846
BC847
BC848
80
50
30
V
V
BC846
BC847
BC848
6.0
6.0
5.0
V
V
EBO
I
Collector Current-Continuous
100
mA
C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Total Device Dissipation FR-5 Board (Note.1)
TA=25°C
Derate above 25°C
P
150
2.4
mW
mW/°C
D
R
Thermal Resistance, Junctionto Ambient (Note.1)
Junctionand Temperature Range
833
+150
°C/W
°C
θJA
T
J
Storage Temperature Range
Tstg
-55 to +150
°C
Device Marking
BC846AW=1A; BC846BW=1B; BC847AW=1E; BC847BW=1F
BC847CW=1G; BC848AW=1J; BC848BW;=1K; BC848CW=1L
1. FR-5=1.0 x 0.75 x 0.062 in.
WEITR ON
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1/4
Rev.B 12-Dec-06
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
WEITRON
Electrical Characteristics (T =25°C Unless Otherwise noted)
A
Characteristics
Symbol
Min
Typ
Max
Unit
Off Characteristics
-
-
-
-
-
-
65
45
30
Collector-Emitter Breakdown Voltage
(I =10mA)
C
BC846A Series
BC847A Series
BC848A Series
V
(BR)CEO
V
V
-
-
-
-
-
-
Collector-Emitter Breakdown Voltage
(IC=10μA,VEB=0)
BC846A Series
BC847A Series
BC848A Series
80
50
30
V
V
(BR)CES
BC846A Series
BC847A Series
BC848A Series
-
-
-
-
-
-
80
50
30
Collector-Base Breakdown Voltage
(I =10μA)
C
V
V
(BR)CBO
BC846A Series
BC847A Series
BC848A Series
-
-
-
-
-
-
Emitter-Base Breakdown Voltage
(I =1.0μA)
E
6.0
6.0
5.0
V
(BR)EBO
Collector Cutoff Current
(V =30V)
CB
-
-
-
-
15
5.0
nA
mA
I
CBO
(V =30V, T =150°C)
CB
A
On Characteristics
DC Current Gain
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C,
-
-
-
-
-
-
90
(I =10uA, V =5.0V)
C
CE
150
270
180
290
520
(I =2.0mA, V =5.0V)
C
CE
-
h
FE
110
200
420
220
450
800
Collector-Emitter Saturation Voltage
(IC=10mA, IB=0.5mA)
(IC=100mA, IB=5.0mA)
-
-
-
-
0.25
0.6
V
V
CE(sat)
V
V
Base-Emitter Saturation Voltage
(IC=10mA,IB=0.5mA)
(IC=100mA,IB=5.0mA)
-
-
-
-
-0.7
-0.9
BE(sat)
Base-Emitter On Voltage
(IC=2.0mA,VCE=5.0V)
(IC=10mA,VCE=5.0V)
580
-
660
-
700
770
V
BE(on)
V
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC=10mA, VCE=5.0V, f=100MHz)
-
-
-
f
100
-
T
MHz
pF
Output Capacitance
(VCB=10V, f=1.0MHz)
C
obo
4.5
Noise Figure
(IC=0.2mA, VCE=5.0V, Rs=2.0kΩ, f=1.0kHz, BW=200Hz)
NF
dB
10
4.0
-
-
BC846A,B BC847A,B BC848A,B
BC847C, BC848C
-
-
WEITRON
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2/4
Rev.B 12-Dec-06
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
WEITRON
BC847 & BC848 Series
1.0
2.0
1.5
T =25 C
A
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
=10V
CE
T =25 C
A
V
@I / B =10
C C
BE(sat)
1.0
0.8
V
@V = 10V
BE(ON)
CE
0.6
0.4
0.3
V
@I / B =10
(sat)
CE
C
C
0.2
0
0.1
0.2
0.5 1.0
2.0
5.0 10
20
50 100 200
0.2 0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc)
Figure1.Normalized DC Current Gain
I
, COLLECTOR CURRENT (mAdc)
C
Firure2. "Saturation" And "On" Voltage
1.0
1.2
2.0
1.6
1.2
0.8
0.4
0
T =25 C
A
-55 C to +125 C
1.6
2.0
2.4
2.8
I
= 200mA
C
I
=
I
= 100mA
C
I
=-50mA
C
C
10mA
I
= 20mA
C
0.2
1.0
10
100
0.02
0.1
1.0
10
20
IC, COLLECTOR CURRENT (mA)
I , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
B
Figure 4. Base-Emitter Temperature Coefficient
10
400
300
7.0
T =25 C
A
200
5.0
C
VCE=10V
ib
TA= 25 C
100
80
3.0
2.0
60
C
ob
40
30
1.0
0.4
20
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
V
, REVERSE VOLTAGE (VOLTS)
I
COLLECTOR CURRENT (mAdc)
R
C,
Figure 5. Capacitances
Figure 6. Current-Gain- Bandwidth Product
WEITRON
http://www.weitron.com.tw
3/4
Rev.B 12-Dec-06
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
WEITRON
BC846 Series
1.0
T =25 C
A
V
=5V
CE
0.8
0.6
0.4
0.2
T =25 C
A
V
@I / I =10
BE(sat)
C B
2.0
1.0
0.5
V
@V =-5.0V
BE CE
0.2
V
@I / I =10
C B
CE(sat)
0
0.1 0.2
1.0
10
100
0.2
0.5 1.0
2.0
5.0
10
20
50 100 200
I
, COLLECTOR CURRENT (mA)
C
I
, COLLECTOR CURRENT(mA)
C
Figure 7.DC Current Gain
Figure 8. "ON" Voltage
1.0
2.0
T =25 C
A
1.4
1.8
2.2
2.6
3.3
1.6
1.2
0.8
0.4
0
20mA
50mA
100mA
200mA
q
for V
BE
VB
-55 C to 125 C
IC=
10mA
0.2
0.5
1.0
-2.0
, COLLECTOR CURRENT (mA)
C
5.0
10
20
50
100
200
0.02
0.05 0.1
0.2
0.5 1.0
2.0
5.0
10
20
I
I
B
, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base-Emitter Temperature Coefficient
40
20
V
=5.0V
CE
500
T =25 C
T =25 C
A
A
C
200
100
50
ib
10
8.0
6.0
4.0
C
ob
20
2.0
1.0
5.0 10
50 100
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50 100
I
, COLLECTOR CURRENT (mA)
C
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 12.Current-Gain-Bandwidth Product
Figure 11. Capacitance
WEITRON
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4/4
Rev.B 12-Dec-06
相关型号:
BC846AW-13
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES
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