ESD0502B3E [WEITRON]

2-Line TVS Array; 2线TVS阵列
ESD0502B3E
型号: ESD0502B3E
厂家: WEITRON TECHNOLOGY    WEITRON TECHNOLOGY
描述:

2-Line TVS Array
2线TVS阵列

电视
文件: 总3页 (文件大小:227K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ESD0502B3E  
2-Line TVS Array  
Peak Pulse Power  
25 Watts  
P b  
Lead(Pb)-Free * Halogen-Free  
Reverse Working Voltage  
5.0 VOLTS  
Features:  
* Transient protection for data lines to  
IEC 61000-4-2 (ESD) 15kꢀ (air)ꢁ ꢂkꢀ (contact)  
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)  
Cable Discharge Event (CDE)  
* Protects two data lines  
* Low clamping voltage  
+
TOP  
- -  
* Working voltage: 5ꢀ  
* Low leakage current  
* Solid-state silicon-avalanche technology  
+
1. CATHODE  
2. CATHODE  
3. ANODE  
BACK  
- -  
Main Applications:  
BFBP-03E  
* Cellular Handsets & Accessories  
* Personal Digital Assistants (PDAs)  
* Notebooks & Handhelds  
* Portable Instrumentation  
* Digital Cameras  
* Peripherals  
* MP3 Players  
Mechanical Characteristics:  
* Lead Finish: NiPdAu  
* Marking : 05  
BFBP Outline Dimensions  
Unit:mm  
TOP VIEW  
SIDE VIEW  
BOTTOM VIEW  
WEITRON  
http://www.weitron.com.tw  
1/3  
02-Apr-08  
ESD0502B3E  
Maximum Ratings (T =25°C unless otherwise noted)  
A
Parameter  
Symbol  
Value  
25  
Units  
Peak Pulse Power (tp=8/20 s)  
PPP  
W
Maximum Peak Pulse Current (tp = 8/20μs)  
2
IPP  
A
IEC61000-4-2 Air(ESD)  
IEC61000-4-2 Contact(ESD)  
Operating Temperature  
Storage Temperature  
20  
15  
ESD  
kV  
°C  
°C  
TJ  
-55 to +125  
-55 to +150  
TSTG  
ELECTRICAL CHARACTERISTICS  
Parameter  
Symbol  
Minimum  
Typical  
Maximum  
Units  
V
-
-
-
-
Reverse Stand-Off Voltage  
VRWM  
VBR  
IR  
5
-
Reverse Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
It = 1mA  
6
-
V
VRWM = 5V, T=25°C  
IF = 10mA  
0.25  
1.2  
12.5  
10  
μA  
V
-
VF  
1
-
-
Clamping Voltage  
IPP = 2A, tp = 8/20μs  
VR = 0V, f = 1MHz  
VR = 3.3V, f = 1MHz  
VC  
Cj  
V
-
-
Junction Capacitance  
Junction Capacitance  
pF  
pF  
-
-
Cj  
4.5  
Device Marking  
Item  
Eqivalent Circuit diagram  
Marking  
1
3
2
05  
ESD0502B3E  
Order Information  
Item  
Shipping  
Package  
ESD0502B3E  
BFBP  
5000 / Tape & Reel  
WEITRON  
http://www.weitron.com.tw  
2/3  
02-Apr-08  
ESD0502B3E  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
1
0.1  
0.01  
0
25  
50  
75  
100  
125  
150  
0.1  
1
10  
100  
Ambient Temperature - TA (oC)  
Pulse Duration - tp (us)  
Power Derating Curve  
Non-Repetitive Peak Pulse Power vs. Pulse Time  
15  
8
7
6
5
4
3
2
1
0
10  
5
Waveform  
Parameters:  
tr = 8μs  
Waveform  
Parameters:  
tr = 8μs  
td = 20μs  
td = 20μs  
0
0
0.5  
1
1.5  
2
2.5  
3
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14  
Peak Pulse Current - IPP (A)  
Forward Current - IF (A)  
Forward Voltage vs. Forward Current  
Clamping Voltage vs. Peak Pulse Current  
1.1  
1
f = 1 MHz  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0
1
2
3
4
5
Reverse Voltage - VR (V)  
ESD Clamping  
(8kV Contact per IEC 61000-4-2)  
Junction Capacitance vs. Reverse Voltage  
WEITRON  
http://www.weitron.com.tw  
3/3  
02-Apr-08  

相关型号:

ESD0502V23T-2A

Transient Voltage Suppressors Array for ESD Protection
UNSEMI

ESD0502V23T-2A

Transient Voltage Suppressors Array for ESD Protection
SOCAY

ESD0502V23T-2C

Transient Voltage Suppressors Array for ESD Protection
UNSEMI

ESD0502V23T-2C

Transient Voltage Suppressors Array for ESD Protection
SOCAY

ESD0524P

Ultra LowCapacitance ESD Protection Array
SEMITECH

ESD0524P_V1

Ultra LowCapacitance ESD Protection Array
SEMITECH

ESD0571P6-TP

Trans Voltage Suppressor Diode,
MCC

ESD0571P6-TP-HF

Trans Voltage Suppressor Diode,
MCC

ESD05C

Transient Voltage Suppressors for ESD Protection (Bi-directional)
SECOS

ESD05R

150 W Transient Voltage Suppressors Diode
SECOS

ESD05V02D-C

优恩半导体ESD静电保护器
UNSEMI

ESD05V02D-HC

ESD05V02D-HC
UNSEMI