HFM102M-G [WEITRON]
Rectifier Diode, 1 Element, 1A, 100V V(RRM),;
| 型号： | HFM102M-G |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Rectifier Diode, 1 Element, 1A, 100V V(RRM), 二极管 |
| 文件： | 总3页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HFM101M thru
HFM107M
Surface Mount Ultra Fast Recovery
Rectifiers
* “G” Lead(Pb)-Free
REVERSE VOLTAGE
50 TO 1000 VOLTS
FORWARD CURRENT
1.0 AMPERE
Features:
*For Surface Mount Application
*Glass Passivated Chip
*Low Reverse Leakage Current
*Low Forward Voltage Drop And High Current Capability
*Plastic Meterial Has UL Flammability Classification 94V-0
Mechanical Data:
* Case: Molded Plastic, MINI-SMA(Similar to SOD-123F)
* Terminals: Solder Plated, Solderable per ML-STD-750 Medthod 2026
* Polarity: Indicated by Cathode Band
MINI-SMA
(SOD-123F)
* Wight: 0.040 grams
MINI-SMA Outline Dimension
unit:mm
B
C
MINI-SMA
Dim
Max
1.80
Min
1.40
A
A
B
C
E
H
J
3.70
4.10
E
0.30(TYP)
-
2.80
3.20
J
0.90(TYP)
1.60
-
H
1.40
H
WEITRON
http://www.weitron.com.tw
HFM101M thru
HFM107M
Maximum Ratings and Electrical Characteristics
Rating 25 C Ambient Temperature Unless Otherwise Specified.
Single Phase Half Wave, 60Hz , Resistive or Inductive Load.
For Capacitive Load, Derate Current by 20%.
HFM HFM
101M 102M
HFM
105M
HFM HFM
103M 104M
HFM
106M
HFM
107M
Unit
Symbol
Characteristics
800
560
800
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
1000
700
V
50
35
50
100 200 400
70 140 280
100 200 400
600
420
600
V
V
V
RRM
V
RMS
Maximum DC Blocking Voltage
Maximum Average Forward
1000
VDC
A
A
V
I
F(AV)
1.0
30
Rectified Current @T =50 C
A
Peak Forward Surge Current,
8.3 ms Single Half Sine-Wave
I
FSM
Superimposed on Rated Load (JEDEC Method)
Maximum Instantaneous At 1.0A DC
1.7
1.3
5.0
V
1.0
F
Maximum DC Reverse Current @T =25 C
A
I
uA
ns
R
At Rated DC Blocking Voltage @T =100 C
A
150
T
50
75
Maximum Reverse Recovery Time
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
RR
P
F
C
20(TYP)
42(TYP)
J
R
T
C/W
C
JA
T
-55 to+150
J
-55 to+150
STG
C
1.Measured at 1.0MHz applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
NOTES:
Device Marking
Marking
Marking
Item
Item
H5
H6
H7
HFM105M
HFM106M
HFM107M
HFM101M
HFM102M
HFM103M
HFM104M
H1
H2
H3
H4
WEITRON
http://www.weitron.com.tw
HFM101M thru
HFM107M
AND CHARACTERISTIC CURVES
RATING
10
1.0
.1
1.2
1.0
0.8
0.6
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.4
0.2
0
0
25
50
75
100
125
150
175
Tj=25 C
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
FIG.2-Tyical Forward Current Derating Curve
.01
.001
30
24
18
12
6
1.6 1.8
.4
.6
.8
1.0 1.2 1.4
FORWARD VOLTAGE,(V)
FIG.1-Typical Forward
Characteristics
8.3ms Single Half
Tj=25 C
Sine Wave
JEDEC method
50
W
10W
NONINDUCTIVE
NONINDUCTIVE
(
)
0
(+)
D.U.T.
50
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
1
5
10
100
NUMBER OF CYCLES AT 60Hz
(
)
(+)
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
FIG.4-Maximum Non-repetitive Forward
Surge Current
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
175
120
100
80
trr
|
|
|
|
|
|
|
|
+0.5A
0
60
40
20
0
-0.25A
-1.0A
.01
.05
.1
.5
1
5
10
50
100
1cm
SET TIME BASE FOR
50 / 10ns / cm
REVERSE VOLTAGE,(V)
FIG.5-Typical Junction Capacitance
FIG.3- Test Circuit Diagram and Reverse
Recovery Time Characteristics
WEITRON
http://www.weitron.com.tw
相关型号：
HFM102W
SURFACE MOUNT HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
RECTRON
HFM102W-W
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SMX, 2 PIN
RECTRON
HFM103
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)
RECTRON
©2020 ICPDF网 联系我们和版权申明