KTD1898 [WEITRON]
Epitaxial Planar NPN Transistors; 外延平面NPN晶体管
| 型号： | KTD1898 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Epitaxial Planar NPN Transistors |
| 文件： | 总4页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTD1898
Epitaxial Planar NPN Transistors
SOT-89
1
2
1. BASE
2. COLLECTOR
3
3. EMITTER
(Ta=25 )
ABSOLUTE MAXIMUM RATINGS
Rating
C
Symbol
Limits
Unit
Vdc
Vdc
Collector-Base Voltage
V
V
100
CBO
Collector-Emitter Voltage
Emitter-Base Voltage
80
CEO
Vdc
A(DC)
A (Pulse)*
W
5
1
2
V
EBO
I
C
Collector Current
I
CP
P
0.5
Collector Power Dissipation
C
T ,
Tstg
C
Junction Temperature,
Storage Temperature
150, -55 to +150
j
* Single pulse Pw = 20ms
%
(Ta=25 unless otherwise noted )
C
ELECTRICAL CHARACTERISTICS
Parameter
Min
Typ
Symbol
Max
Unit
V
-
-
BV
100
Collector-Base Breakdown Voltage(Ic=100uA)
Collector-Emitter Breakdown Voltage(Ic=1mA)
CBO
V
V
80
5
-
-
-
BV
BV
I
CEO
EBO
Emitter-Base Breakdown Voltage(I =100uA)
-
E
-
1
1
uA
uA
Collector Cutoff Current(V =80V)
-
-
CBO
EBO
CB
I
Emitter Cutoff Current(V =4V)
-
EB
WEITRON
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KTD1898
%
(Countinued)
(Ta=25 C unless otherwise noted )
ELECTRICAL CHARACTERISTICS
Parameter
Min Typ
Symbol
Max Unit
h
70
-
DC Current Gain (V =3V, Ic=500mA)
400
-
CE
FE
V
Collector-Emitter Saturation Voltage (Ic=500mA, I =20mA)
V
CE(sat)
-
-
-
-
0.4
B
-
-
Transition Frequency (V =10V, Ic=50mA, f=100MHz)
f
MHz
pF
100
20
CE
T
Cob
Output Capacitance (V =10V, I =0A, f=1MHz)
CB
E
CLASSIFICATION OF h
FE
ZY
Y
ZG
GR
ZO
O
Marking
Rank
Range
120-240
200-400
70-140
ELECTRICAL CHARACTERISTIC CURVES
1000
Ta=25°C
Ta=25°C
V
C E =5V
6mA
5mA
4mA
1.0
100
10
0.8
0.6
0.4
3mA
2mA
1
1mA
0.2
0
I
10
B
=0mA
0.1
0
2
4
68
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BAS E TO E MITTE R VOLTAG E : VBE (V)
C OLLE C TOR TO E MITTE R VOLTAG E : VC E (V)
FIG.2 Grounded Emitter Output
Characteristics
FIG.1 Grounded Emitter Propagation
Characteristics
WEITRON
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KTD1898
Ta=25°C
Ta=25°C
2.0
1000
1.0
0.5
VC E =3V
1V
0.2
I
C
/I
B
=20/1
10/1
100
0.1
0.05
0.02
0.01
0
0
10
100
1000
0
10
100
1000
C OLLE C TOR C UR R E NT : I
C
(mA)
C OLLE C TOR C UR R E NT : I
C
(mA)
FIG.3 DC Current Gain vs.
Collector Current
FIG.4 Collector-Emitter Ssaturation
Voltage vs. Collector Current
1000
Ta=25°C
Ta=25°C
f=1MHz
V
C E =5V
500
IE =0A
Ic=0A
200
100
50
100
10
1
20
10
5
2
0.1 0.2 0.5
1
2
5
10 20 50 100
1
2
5
10 20 50 100 200 500 1000
C OLLE C TOR TO BAS E VOLTAG E : VC B
E MITTE R TO BAS E VOLTAG E : VE B
(
(
V)
V)
E MITTE R C UR R E NT : −I
E
(mA)
FIG.6 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
FIG.5 Gain Bandwidth Product vs.
Emitter Current
10
5
Emitter-Base Voltage
Ta=25°C
S ingle
non-repetitive
pulse
Ic Max (P ulse)
DC
2
1
P
w
=
P
1
w
0
=
m
S
1
500m
0
0
m
S
200m
100m
50m
20m
10m
5m
2m
1m
0.1 0.2 0.5
1
2
5 10 20 50 100200 5001000
C OLLE C TOR TO E MITTE R VOLTAG E : VC E
(
V)
FIG.7 Safe Operating Area
WEITRON
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KTD1898
SOT-89 Outline Dimensions
unit:mm
SOT-89
Min
Dim
A
B
C
D
Max
E
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
A
G
H
J
C
E
G
H
J
D
B
K
K
L
1.500TYP
L
3.100
2.900
WEITRON
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