MCL4448 [WEITRON]

High-Speed Switching Diodes; 高速开关二极管
MCL4448
型号: MCL4448
厂家: WEITRON TECHNOLOGY    WEITRON TECHNOLOGY
描述:

High-Speed Switching Diodes
高速开关二极管

二极管 开关
文件: 总3页 (文件大小:331K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MCL4148/MCL4448  
High-Speed Switching Diodes  
SMALL SIGNAL  
SWITCHING DIODES  
150 m AMPERES  
75 VOLTS  
P b  
Lead(Pb)-Free  
Features:  
*Silicon Epitaxial Planner Diode  
*Fast Switching Diodes  
*500 mW Power Dissipation  
Mechanical Data:  
*Case : MicroMELF Glass Case  
*Weight : Approx 0.0123 gram  
MICRO-MELF  
MICRO-MELF Outline Dimensions  
Unit:mm  
MICRO-MELF  
A
Dim  
A
B
Min  
2.0  
1.20  
1.35  
Max  
1.8  
1.30  
1.35  
B
C
WEITRON  
http//www.weitron.com.tw  
MCL4148/MCL4448  
Maximum Ratings ( T =25 C Unless otherwise noted)  
A
Symbol  
MCL4148/MCL4448  
Characteristic  
Unit  
V
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
100  
PWM  
75  
V
I
V
R
(1)  
mA  
Average Rectified Output Current  
150  
O
Non-Repetitive Peak Forward Surge Current  
@t=1.0us  
A
2.0  
I
FSM  
Power Dissipation  
P
500  
300  
mW  
K/W  
C
d
R
Thermal Resistance Junction to Ambient(2)  
Operating and Strorage Temperature Range  
θJA  
TSTG  
,
-65 to +175  
TJ  
Electrical Characteristics ( T =25 C Unless otherwise noted)  
A
Min  
Unit  
Characteristic  
Symbol  
Max  
Reverse Breakdown Voltage  
I = 100uA  
R
-
V
100  
V
(BR)R  
Forward Voltage  
I =10 mA  
MCL4148  
MCL4448  
1.0  
0.72  
1.0  
F
V
F
0.62  
V
I =5 mA  
F
I =100 mA  
F
Leakage Current  
V =20V  
R
V =75V  
R
-
-
-
25  
5
50  
nA  
uA  
uA  
I
R
V =20V,Tj=150 C  
R
Junction Capacitance  
PF  
-
-
4
4
Cj  
V =0V, f=1MHz  
R
Reverse Recovery Time  
Trr  
nS  
I =10 mA, I =1mA, i =0.1 I ,V =6V, R =100  
R
R
F
R
L
R
Note: 1.Valid Provided that device Terminals are Kept at Ambient Temperature.  
2. On PC board 50 mm 50mm 1.6mm.  
WEITRON  
http//www.weitron.com.tw  
MCL4148/MCL4448  
WE ITR ON  
(Tamb=25 C unless otherwise specified)  
Typical Characteristics  
1000  
100  
10  
1000  
MCL4448  
MCL4148  
100  
10  
1
Scattering Limit  
Scattering Limit  
1
j
T =25 C  
j
T =25 C  
0.1  
0.1  
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.0  
0
0.4  
0.8  
1.2  
1.6  
V
F
, FORWARD VOLTAGE(V)  
V
F
, FORWARD VOLTAGE(V)  
FIG.2 Forward Current vs. Forward Voltage  
FIG.1 Forward Current vs. Forward Voltage  
3.0  
1000  
f=1MHz  
2.5  
J
T =25 C  
j
T =25 C  
2.0  
1.5  
1.0  
100  
Scattering Limit  
10  
0.5  
0
1
100  
0.1  
1
10  
1
10  
100  
V
R
, REVERSE VOLTAGE(V)  
V
R
, REVERSE VOLTAGE(V)  
FIG.3 Reverse Current vs. Reverse Voltage  
FIG.4 Diode Capacitance vs. Reverse Voltage  
WEITRON  
http://www.weitron.com.tw  

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